DE3063206D1 - Improved read only memory and method of programming such a memory - Google Patents

Improved read only memory and method of programming such a memory

Info

Publication number
DE3063206D1
DE3063206D1 DE8080300034T DE3063206T DE3063206D1 DE 3063206 D1 DE3063206 D1 DE 3063206D1 DE 8080300034 T DE8080300034 T DE 8080300034T DE 3063206 T DE3063206 T DE 3063206T DE 3063206 D1 DE3063206 D1 DE 3063206D1
Authority
DE
Germany
Prior art keywords
memory
programming
improved read
read
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080300034T
Other languages
English (en)
Inventor
Levy Gerzberg
Arnon Gat
Roger Melen
James F Gibbons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Application granted granted Critical
Publication of DE3063206D1 publication Critical patent/DE3063206D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
DE8080300034T 1979-01-05 1980-01-04 Improved read only memory and method of programming such a memory Expired DE3063206D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/001,360 US4233671A (en) 1979-01-05 1979-01-05 Read only memory and integrated circuit and method of programming by laser means

Publications (1)

Publication Number Publication Date
DE3063206D1 true DE3063206D1 (en) 1983-07-07

Family

ID=21695648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080300034T Expired DE3063206D1 (en) 1979-01-05 1980-01-04 Improved read only memory and method of programming such a memory

Country Status (5)

Country Link
US (1) US4233671A (de)
EP (1) EP0013603B1 (de)
JP (1) JPS5593254A (de)
CA (1) CA1137630A (de)
DE (1) DE3063206D1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750468A (en) * 1980-09-12 1982-03-24 Fujitsu Ltd Semiconductor memory
JPS5750467A (en) * 1980-09-12 1982-03-24 Fujitsu Ltd Semiconductor memory
US4424579A (en) * 1981-02-23 1984-01-03 Burroughs Corporation Mask programmable read-only memory stacked above a semiconductor substrate
US4404635A (en) * 1981-03-27 1983-09-13 International Business Machines Corporation Programmable integrated circuit and method of testing the circuit before it is programmed
FR2520146A1 (fr) * 1982-01-15 1983-07-22 Thomson Csf Matrice d'elements a memoire integres, a diode schottky sur silicium polycristallin, et procede de fabrication
JPS58188155A (ja) * 1982-04-27 1983-11-02 Seiko Epson Corp ２層構造ｒｏｍ集積回路
JPS58209157A (ja) * 1982-05-31 1983-12-06 Seiko Epson Corp 半導体記憶素子
JPS60245164A (ja) * 1984-05-18 1985-12-04 Fujitsu Ltd ダイオ−ドアレイの製造方法
GB2167621B (en) * 1984-11-27 1988-03-02 Crystalate Electronics Programmed matrix device
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
US5545904A (en) * 1986-01-17 1996-08-13 Quick Technologies Ltd. Personalizable gate array devices
IL86162A (en) * 1988-04-25 1991-11-21 Zvi Orbach Customizable semiconductor devices
US5679967A (en) * 1985-01-20 1997-10-21 Chip Express (Israel) Ltd. Customizable three metal layer gate array devices
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
DE3731621A1 (de) * 1987-09-19 1989-03-30 Texas Instruments Deutschland Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung
US4929995A (en) * 1988-02-16 1990-05-29 Honeywell Inc. Selective integrated circuit interconnection
JP2778977B2 (ja) * 1989-03-14 1998-07-23 株式会社東芝 半導体装置及びその製造方法
JPH03225868A (ja) * 1990-01-30 1991-10-04 Hitachi Ltd 固体撮像素子とそれを用いた撮像装置
JPH0461162A (ja) * 1990-06-22 1992-02-27 Mitsubishi Electric Corp 半導体集積回路装置
JPH04115565A (ja) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp 半導体記憶装置
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
US5811869A (en) * 1996-01-04 1998-09-22 Micron Technology, Inc. Laser antifuse using gate capacitor
IL116792A (en) * 1996-01-16 2000-01-31 Chip Express Israel Ltd Customizable integrated circuit device
US5742555A (en) 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
TW306005B (en) * 1996-11-22 1997-05-21 United Microelectronics Corp Decoding method of diode-type read only memory array
DE19713173C2 (de) * 1997-03-27 2001-02-15 Siemens Ag ROM-Speicher
US5831893A (en) * 1997-05-13 1998-11-03 Sipex Corporation Memory cell
KR100263476B1 (ko) * 1998-03-24 2000-09-01 김영환 가변회로 컨넥터 형성방법
US5885873A (en) * 1998-04-20 1999-03-23 Texas Instruments--Acer Incorporated Double coding processes for mask read only memory (ROM) devices
US6836000B1 (en) 2000-03-01 2004-12-28 Micron Technology, Inc. Antifuse structure and method of use
JP4010091B2 (ja) * 2000-03-23 2007-11-21 セイコーエプソン株式会社 メモリデバイスおよびその製造方法
US6964906B2 (en) * 2002-07-02 2005-11-15 International Business Machines Corporation Programmable element with selectively conductive dopant and method for programming same
US7084053B2 (en) * 2003-09-30 2006-08-01 Intel Corporation Unidirectionally conductive materials for interconnection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763476A (en) * 1972-03-15 1973-10-02 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer
US3860915A (en) * 1973-06-29 1975-01-14 Geier Karl Heinz Matrix arrangement for operating optical elements
US4032373A (en) * 1975-10-01 1977-06-28 Ncr Corporation Method of manufacturing dielectrically isolated semiconductive device
US4130891A (en) * 1977-08-08 1978-12-19 General Electric Company Methods of gray scale recording and archival memory target produced thereby

Also Published As

Publication number Publication date
EP0013603B1 (de) 1983-05-18
EP0013603A1 (de) 1980-07-23
CA1137630A (en) 1982-12-14
US4233671A (en) 1980-11-11
JPS5593254A (en) 1980-07-15

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee