DE3065501D1 - Deposition method using an energetic particle beam - Google Patents
Deposition method using an energetic particle beamInfo
- Publication number
- DE3065501D1 DE3065501D1 DE8080102246T DE3065501T DE3065501D1 DE 3065501 D1 DE3065501 D1 DE 3065501D1 DE 8080102246 T DE8080102246 T DE 8080102246T DE 3065501 T DE3065501 T DE 3065501T DE 3065501 D1 DE3065501 D1 DE 3065501D1
- Authority
- DE
- Germany
- Prior art keywords
- deposition method
- particle beam
- energetic particle
- energetic
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/040,339 US4250009A (en) | 1979-05-18 | 1979-05-18 | Energetic particle beam deposition system |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3065501D1 true DE3065501D1 (en) | 1983-12-15 |
Family
ID=21910469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080102246T Expired DE3065501D1 (en) | 1979-05-18 | 1980-04-25 | Deposition method using an energetic particle beam |
Country Status (4)
Country | Link |
---|---|
US (1) | US4250009A (de) |
EP (1) | EP0019725B1 (de) |
JP (1) | JPS5842269B2 (de) |
DE (1) | DE3065501D1 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4713157A (en) * | 1976-02-17 | 1987-12-15 | Ramtron Corporation | Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same |
JPS5911988B2 (ja) * | 1980-01-23 | 1984-03-19 | 株式会社日立製作所 | イオン打込み方法 |
US4701592A (en) * | 1980-11-17 | 1987-10-20 | Rockwell International Corporation | Laser assisted deposition and annealing |
DE3276540D1 (en) * | 1981-03-26 | 1987-07-16 | Inoue Japax Res | A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby |
US4419203A (en) * | 1982-03-05 | 1983-12-06 | International Business Machines Corporation | Apparatus and method for neutralizing ion beams |
US4471224A (en) * | 1982-03-08 | 1984-09-11 | International Business Machines Corporation | Apparatus and method for generating high current negative ions |
US4414069A (en) * | 1982-06-30 | 1983-11-08 | International Business Machines Corporation | Negative ion beam selective etching process |
US4424104A (en) * | 1983-05-12 | 1984-01-03 | International Business Machines Corporation | Single axis combined ion and vapor source |
US4690744A (en) * | 1983-07-20 | 1987-09-01 | Konishiroku Photo Industry Co., Ltd. | Method of ion beam generation and an apparatus based on such method |
US4704168A (en) * | 1984-10-16 | 1987-11-03 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ion-beam nitriding of steels |
US4664769A (en) * | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
DE3737142A1 (de) * | 1987-11-02 | 1989-05-11 | Christiansen Jens | Erzeugung von (duennen) schichten aus hochschmelzender bzw. sublimierender materie (leitender, halbleitender und nichtleitender) und gemischen davon mit pseudofunkenelektronenstrahlen |
GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
US4915810A (en) * | 1988-04-25 | 1990-04-10 | Unisys Corporation | Target source for ion beam sputter deposition |
US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
DE3904991A1 (de) * | 1989-02-18 | 1990-08-23 | Leybold Ag | Kathodenzerstaeubungsvorrichtung |
US4985657A (en) * | 1989-04-11 | 1991-01-15 | Lk Technologies, Inc. | High flux ion gun apparatus and method for enhancing ion flux therefrom |
IT1238337B (it) * | 1990-01-23 | 1993-07-12 | Cons Ric Microelettronica | Dispositivo per la ionizzazione di metalli ad alta temperatura di fusione, utilizzabile su impiantatori ionici del tipo impiegante sorgenti di ioni di tipo freeman o assimilabili |
US5078847A (en) * | 1990-08-29 | 1992-01-07 | Jerry Grosman | Ion plating method and apparatus |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5449920A (en) * | 1994-04-20 | 1995-09-12 | Northeastern University | Large area ion implantation process and apparatus |
US5679270A (en) * | 1994-10-24 | 1997-10-21 | Howmet Research Corporation | Method for removing ceramic material from castings using caustic medium with oxygen getter |
US6132564A (en) * | 1997-11-17 | 2000-10-17 | Tokyo Electron Limited | In-situ pre-metallization clean and metallization of semiconductor wafers |
US5601654A (en) * | 1996-05-31 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Flow-through ion beam source |
US6592728B1 (en) * | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
US6402901B1 (en) * | 2001-03-16 | 2002-06-11 | 4 Wave, Inc. | System and method for performing sputter deposition using a spherical geometry |
US6488821B2 (en) | 2001-03-16 | 2002-12-03 | 4 Wave Inc. | System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate |
JP2002289584A (ja) * | 2001-03-26 | 2002-10-04 | Ebara Corp | 表面処理方法 |
US20040231843A1 (en) * | 2003-05-22 | 2004-11-25 | Simpson Nell A. A. | Lubricant for use in a wellbore |
FR2869324B1 (fr) * | 2004-04-21 | 2007-08-10 | Saint Gobain | Procede de depot sous vide |
US7954219B2 (en) * | 2004-08-20 | 2011-06-07 | Jds Uniphase Corporation | Substrate holder assembly device |
DK1630260T3 (da) * | 2004-08-20 | 2011-10-31 | Jds Uniphase Inc | Magnetisk holdemekanisme til et dampudfældningssystem |
US8500973B2 (en) * | 2004-08-20 | 2013-08-06 | Jds Uniphase Corporation | Anode for sputter coating |
US7785456B2 (en) * | 2004-10-19 | 2010-08-31 | Jds Uniphase Corporation | Magnetic latch for a vapour deposition system |
US7879209B2 (en) * | 2004-08-20 | 2011-02-01 | Jds Uniphase Corporation | Cathode for sputter coating |
US20060049041A1 (en) * | 2004-08-20 | 2006-03-09 | Jds Uniphase Corporation | Anode for sputter coating |
JP4583868B2 (ja) * | 2004-10-15 | 2010-11-17 | 株式会社昭和真空 | スパッタ装置 |
US20090020415A1 (en) * | 2007-07-16 | 2009-01-22 | Michael Gutkin | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source |
CN104538457A (zh) * | 2015-01-15 | 2015-04-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
JP2020023739A (ja) * | 2018-08-08 | 2020-02-13 | 株式会社アルバック | イオンビームスパッタリング装置及びイオンビームスパッタリング方法 |
GB2590398B (en) * | 2019-12-16 | 2022-08-31 | Dyson Technology Ltd | Methods of making anode architectures |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE875249C (de) * | 1950-12-05 | 1953-04-30 | Sueddeutsche Lab G M B H | Bedampfungseinrichtung |
DD52181A1 (de) * | 1965-07-03 | 1966-12-05 | Siegfried Schiller | Verfahren zur Herstellung dünner Schichten auf einem Träger mittels Ionenstrahlzerstäubung sowie Einrichtung zur Durchführung des Verfahrens |
DE1934328A1 (de) * | 1968-10-17 | 1970-04-30 | Inst Elektronische Bauelemente | Vorrichtung zur wahlweisen Zerstaeubung fester Substanzen durch Ionenbeschuss nach der Plasma- oder Ionenstrahlmethode |
CA928249A (en) * | 1969-04-21 | 1973-06-12 | Eastman Kodak Company | Triode sputtering apparatus |
AT336701B (de) * | 1972-04-05 | 1977-05-25 | Grasenick Fritz Dr | Verfahren zur leitenden beschichtung nichtleitender materialien fur die elektronenmikroskopische praparation |
US4082636A (en) * | 1975-01-13 | 1978-04-04 | Sharp Kabushiki Kaisha | Ion plating method |
US4096055A (en) * | 1976-12-29 | 1978-06-20 | Johnson Andrew G | Electron microscopy coating apparatus and methods |
US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
US4132614A (en) * | 1977-10-26 | 1979-01-02 | International Business Machines Corporation | Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate |
-
1979
- 1979-05-18 US US06/040,339 patent/US4250009A/en not_active Expired - Lifetime
-
1980
- 1980-03-18 JP JP55033500A patent/JPS5842269B2/ja not_active Expired
- 1980-04-25 EP EP80102246A patent/EP0019725B1/de not_active Expired
- 1980-04-25 DE DE8080102246T patent/DE3065501D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4250009A (en) | 1981-02-10 |
JPS5842269B2 (ja) | 1983-09-19 |
EP0019725B1 (de) | 1983-11-09 |
EP0019725A1 (de) | 1980-12-10 |
JPS55154573A (en) | 1980-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |