DE3167074D1 - Electrophotographic member and electrophotographic apparatus including the member - Google Patents

Electrophotographic member and electrophotographic apparatus including the member

Info

Publication number
DE3167074D1
DE3167074D1 DE8181303422T DE3167074T DE3167074D1 DE 3167074 D1 DE3167074 D1 DE 3167074D1 DE 8181303422 T DE8181303422 T DE 8181303422T DE 3167074 T DE3167074 T DE 3167074T DE 3167074 D1 DE3167074 D1 DE 3167074D1
Authority
DE
Germany
Prior art keywords
electrophotographic
apparatus including
electrophotographic apparatus
electrophotographic member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181303422T
Other languages
English (en)
Inventor
Sachio Ishioka
Eiichi Maruyama
Yoshinori Imamura
Hirokazu Matsubara
Shinkichi Horigome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3167074D1 publication Critical patent/DE3167074D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G03G5/144—Inert intermediate layers comprising inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/147—Cover layers
    • G03G5/14704—Cover layers comprising inorganic material
DE8181303422T 1980-07-28 1981-07-24 Electrophotographic member and electrophotographic apparatus including the member Expired DE3167074D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10253080A JPS5727263A (en) 1980-07-28 1980-07-28 Electrophotographic photosensitive film

Publications (1)

Publication Number Publication Date
DE3167074D1 true DE3167074D1 (en) 1984-12-13

Family

ID=14329854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181303422T Expired DE3167074D1 (en) 1980-07-28 1981-07-24 Electrophotographic member and electrophotographic apparatus including the member

Country Status (5)

Country Link
US (1) US4365013A (de)
EP (1) EP0045204B1 (de)
JP (1) JPS5727263A (de)
CA (1) CA1152802A (de)
DE (1) DE3167074D1 (de)

Families Citing this family (60)

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US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
US4409311A (en) * 1981-03-25 1983-10-11 Minolta Camera Kabushiki Kaisha Photosensitive member
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member
DE3311835A1 (de) * 1982-03-31 1983-10-13 Canon K.K., Tokyo Fotoleitfaehiges aufzeichnungselement
JPS58189643A (ja) * 1982-03-31 1983-11-05 Minolta Camera Co Ltd 感光体
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
JPS58192044A (ja) * 1982-05-06 1983-11-09 Konishiroku Photo Ind Co Ltd 感光体
JPS5957416A (ja) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd 化合物半導体層の形成方法
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
US4569894A (en) * 1983-01-14 1986-02-11 Canon Kabushiki Kaisha Photoconductive member comprising germanium atoms
US4532198A (en) * 1983-05-09 1985-07-30 Canon Kabushiki Kaisha Photoconductive member
US4513073A (en) * 1983-08-18 1985-04-23 Minnesota Mining And Manufacturing Company Layered photoconductive element
JPS6083957A (ja) * 1983-10-13 1985-05-13 Sharp Corp 電子写真感光体
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
JPS60243663A (ja) * 1984-05-18 1985-12-03 Kyocera Corp 電子写真感光体
JPS6126054A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
US5753542A (en) 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
DE3681655D1 (en) * 1985-08-03 1991-10-31 Matsushita Electric Ind Co Ltd Elektrophotographischer photorezeptor.
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4777103A (en) * 1985-10-30 1988-10-11 Fujitsu Limited Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same
JPS62170968A (ja) * 1986-01-23 1987-07-28 Hitachi Ltd アモルフアスシリコン電子写真感光体およびその製造方法
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
DE3717727A1 (de) * 1987-05-26 1988-12-08 Licentia Gmbh Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung
DE3832453A1 (de) * 1987-09-25 1989-04-06 Minolta Camera Kk Photoempfindliches element
DE4027236B4 (de) * 1989-08-31 2005-03-31 Sanyo Electric Co., Ltd., Moriguchi Verfahren zur Herstellung von Filmen aus amorphem Silicium und einen solchen Film verwendende Photohalbleiter-Vorrichtung
US5210050A (en) * 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794499B2 (ja) * 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JP2830666B2 (ja) * 1991-11-29 1998-12-02 日本電気株式会社 半導体に発光層を作製する方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6022458A (en) * 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
EP0603585B1 (de) * 1992-12-21 2000-02-09 Balzers Aktiengesellschaft Optisches Bauelement, Verfahren zur Herstellung einer Schicht, Schicht bzw. Schichtsystem und Verwendung des Bauelementes
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
EP0679955B9 (de) * 1994-04-27 2005-01-12 Canon Kabushiki Kaisha Elektrophotographisches lichtempfindliches Element und seine Herstellung
JP2900229B2 (ja) 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
FR2764309B1 (fr) * 1997-06-06 1999-08-27 Corning Inc Procede de creation d'une couche de silicium sur une surface
US11313034B2 (en) * 2016-11-18 2022-04-26 Applied Materials, Inc. Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition
JP7019350B2 (ja) * 2017-09-01 2022-02-15 キヤノン株式会社 電子写真感光体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
DE2954552C2 (de) * 1978-03-03 1989-02-09 Canon K.K., Tokio/Tokyo, Jp
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5562778A (en) * 1978-11-02 1980-05-12 Fuji Photo Film Co Ltd Preparation of photoconductor film
JPS5591885A (en) * 1978-12-28 1980-07-11 Canon Inc Amorphous silicon hydride photoconductive layer
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film

Also Published As

Publication number Publication date
EP0045204B1 (de) 1984-11-07
CA1152802A (en) 1983-08-30
US4365013A (en) 1982-12-21
EP0045204A3 (en) 1982-02-24
JPS5727263A (en) 1982-02-13
EP0045204A2 (de) 1982-02-03

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee