DE3175125D1 - Semiconductor memory device and method for manufacturing the same - Google Patents

Semiconductor memory device and method for manufacturing the same

Info

Publication number
DE3175125D1
DE3175125D1 DE8181305349T DE3175125T DE3175125D1 DE 3175125 D1 DE3175125 D1 DE 3175125D1 DE 8181305349 T DE8181305349 T DE 8181305349T DE 3175125 T DE3175125 T DE 3175125T DE 3175125 D1 DE3175125 D1 DE 3175125D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181305349T
Other languages
English (en)
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55163932A external-priority patent/JPS5787164A/ja
Priority claimed from JP55163931A external-priority patent/JPS5787163A/ja
Priority claimed from JP55163933A external-priority patent/JPS5787165A/ja
Priority claimed from JP16861980A external-priority patent/JPS5792489A/ja
Priority claimed from JP16862080A external-priority patent/JPS5792490A/ja
Priority claimed from JP16861780A external-priority patent/JPS5792866A/ja
Priority claimed from JP16861880A external-priority patent/JPS5792867A/ja
Priority claimed from JP55168616A external-priority patent/JPS5792865A/ja
Priority claimed from JP18095180A external-priority patent/JPS57104263A/ja
Priority claimed from JP56007558A external-priority patent/JPS57121273A/ja
Priority claimed from JP56119782A external-priority patent/JPS5823390A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3175125D1 publication Critical patent/DE3175125D1/de
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
DE8181305349T 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same Expired DE3175125D1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP55163932A JPS5787164A (en) 1980-11-20 1980-11-20 Manufacture of semiconductor memory storage
JP55163933A JPS5787165A (en) 1980-11-20 1980-11-20 Semiconductor memory storage
JP55163931A JPS5787163A (en) 1980-11-20 1980-11-20 Semiconductor memory storage
JP16861980A JPS5792489A (en) 1980-11-29 1980-11-29 Semiconductor storage device
JP16862080A JPS5792490A (en) 1980-11-29 1980-11-29 Semiconductor storage device
JP16861780A JPS5792866A (en) 1980-11-29 1980-11-29 Semiconductor memory device
JP16861880A JPS5792867A (en) 1980-11-29 1980-11-29 Semiconductor memory device
JP55168616A JPS5792865A (en) 1980-11-29 1980-11-29 Manufacture of semiconductor memory device
JP18095180A JPS57104263A (en) 1980-12-20 1980-12-20 Semiconductor memory storage
JP56007558A JPS57121273A (en) 1981-01-21 1981-01-21 Semiconductor memory
JP56119782A JPS5823390A (ja) 1981-07-30 1981-07-30 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3175125D1 true DE3175125D1 (en) 1986-09-18

Family

ID=27581777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181305349T Expired DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same

Country Status (3)

Country Link
US (2) US4803529A (de)
EP (1) EP0052982B1 (de)
DE (1) DE3175125D1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3175125D1 (en) * 1980-11-20 1986-09-18 Toshiba Kk Semiconductor memory device and method for manufacturing the same
JPS6288368A (ja) * 1985-10-15 1987-04-22 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
JP2607504B2 (ja) * 1987-02-20 1997-05-07 株式会社東芝 不揮発性半導体メモリ
FR2616576B1 (fr) * 1987-06-12 1992-09-18 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
US4920512A (en) * 1987-06-30 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory capable of readily erasing data
US5332914A (en) * 1988-02-05 1994-07-26 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5033023A (en) * 1988-04-08 1991-07-16 Catalyst Semiconductor, Inc. High density EEPROM cell and process for making the cell
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US4945393A (en) * 1988-06-21 1990-07-31 At&T Bell Laboratories Floating gate memory circuit and apparatus
JPH0797608B2 (ja) * 1988-10-19 1995-10-18 株式会社東芝 不揮発性半導体メモリおよびその製造方法
JP2515009B2 (ja) * 1989-01-13 1996-07-10 株式会社東芝 不揮発性半導体メモリの製造方法
DE4020007C2 (de) * 1989-06-22 1994-09-29 Nippon Telegraph & Telephone Nichtflüchtiger Speicher
KR100204721B1 (ko) * 1989-08-18 1999-06-15 가나이 쓰도무 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치
IT1236980B (it) * 1989-12-22 1993-05-12 Sgs Thomson Microelectronics Cella di memoria eprom non volatile a gate divisa e processo ad isolamento di campo autoallineato per l'ottenimento della cella suddetta
US4994403A (en) * 1989-12-28 1991-02-19 Texas Instruments Incorporated Method of making an electrically programmable, electrically erasable memory array cell
US5153143A (en) * 1990-02-26 1992-10-06 Delco Electronics Corporation Method of manufacturing CMOS integrated circuit with EEPROM
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5512505A (en) * 1990-12-18 1996-04-30 Sandisk Corporation Method of making dense vertical programmable read only memory cell structure
JPH04255996A (ja) * 1991-02-08 1992-09-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
US5138576A (en) * 1991-11-06 1992-08-11 Altera Corporation Method and apparatus for erasing an array of electrically erasable EPROM cells
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5336936A (en) * 1992-05-06 1994-08-09 Synaptics, Incorporated One-transistor adaptable analog storage element and array
WO1994015363A1 (en) * 1992-12-28 1994-07-07 Yu Shih Chiang Non-volatile semiconductor memory cell
US5723888A (en) * 1993-05-17 1998-03-03 Yu; Shih-Chiang Non-volatile semiconductor memory device
US5436480A (en) * 1993-02-22 1995-07-25 Yu; Shih-Chiang Integrated circuit interconnection programmable and erasable by a plurality of intersecting control traces
US5675531A (en) * 1995-04-05 1997-10-07 International Business Machines Corporation Device for information storage using field emission
US5579259A (en) * 1995-05-31 1996-11-26 Sandisk Corporation Low voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectors
US6038171A (en) * 1997-03-25 2000-03-14 Altera Corporation Field emission erasable programmable read-only memory
TW449746B (en) * 1998-10-23 2001-08-11 Kaitech Engineering Inc Semiconductor memory device and method of making same
US6534816B1 (en) 1999-03-24 2003-03-18 John M. Caywood Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
US6384451B1 (en) 1999-03-24 2002-05-07 John Caywood Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
US20040021170A1 (en) * 1999-03-24 2004-02-05 Caywood John M. Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
DE19929619C2 (de) * 1999-06-28 2001-06-28 Infineon Technologies Ag Halbleiter-Speicherzellenpaar
WO2004071885A2 (en) 2003-02-13 2004-08-26 Martin Marietta Materials, Inc. Insulated cargo containers
TWI270198B (en) * 2004-03-29 2007-01-01 Promos Technologies Inc An array structure, mask and fabrication method of a dynamic random access memory
US7541638B2 (en) 2005-02-28 2009-06-02 Skymedi Corporation Symmetrical and self-aligned non-volatile memory structure
US7439133B2 (en) * 2006-01-02 2008-10-21 Skymedi Corporation Memory structure and method of manufacturing a memory array
US7450424B2 (en) * 2007-01-31 2008-11-11 Skymedi Corporation Method for reading a memory array with a non-volatile memory structure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3825946A (en) * 1971-01-15 1974-07-23 Intel Corp Electrically alterable floating gate device and method for altering same
JPS525233B2 (de) * 1972-02-29 1977-02-10
JPS5213782A (en) * 1975-07-23 1977-02-02 Hitachi Ltd Semiconductor non-vol atile memory unit
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4302766A (en) * 1979-01-05 1981-11-24 Texas Instruments Incorporated Self-limiting erasable memory cell with triple level polysilicon
US4267558A (en) * 1979-01-05 1981-05-12 Texas Instruments Incorporated Electrically erasable memory with self-limiting erase
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
US4561004A (en) * 1979-10-26 1985-12-24 Texas Instruments High density, electrically erasable, floating gate memory cell
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
DE3175125D1 (en) * 1980-11-20 1986-09-18 Toshiba Kk Semiconductor memory device and method for manufacturing the same
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same

Also Published As

Publication number Publication date
EP0052982A2 (de) 1982-06-02
US4910565A (en) 1990-03-20
EP0052982A3 (en) 1983-05-25
US4803529A (en) 1989-02-07
EP0052982B1 (de) 1986-08-13

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Free format text: EITLE, W., DIPL.-ING. HOFFMANN, K., DIPL.-ING. DR.RER.NAT. LEHN, W., DIPL.-ING. FUECHSLE, K., DIPL.-ING. HANSEN, B., DIPL.-CHEM. DR.RER.NAT. BRAUNS, H., DIPL.-CHEM. DR.RER.NAT. GOERG, K., DIPL.-ING. KOHLMANN, K., DIPL.-ING., PAT.-ANW. NETTE, A., RECHTSANW., 8000 MUENCHEN

8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)