DE3176676D1 - Methods of producing sheets of crystalline material and devices amde therefrom - Google Patents

Methods of producing sheets of crystalline material and devices amde therefrom

Info

Publication number
DE3176676D1
DE3176676D1 DE8181901098T DE3176676T DE3176676D1 DE 3176676 D1 DE3176676 D1 DE 3176676D1 DE 8181901098 T DE8181901098 T DE 8181901098T DE 3176676 T DE3176676 T DE 3176676T DE 3176676 D1 DE3176676 D1 DE 3176676D1
Authority
DE
Germany
Prior art keywords
amde
therefrom
methods
devices
crystalline material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181901098T
Other languages
English (en)
Inventor
Carl O Bozler
John C C Fan
Robert W Mcclelland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Application granted granted Critical
Publication of DE3176676D1 publication Critical patent/DE3176676D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/048—Energy beam assisted EPI growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
DE8181901098T 1980-04-10 1981-04-06 Methods of producing sheets of crystalline material and devices amde therefrom Expired DE3176676D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13889180A 1980-04-10 1980-04-10
PCT/US1981/000439 WO1981002948A1 (en) 1980-04-10 1981-04-06 Methods of producing sheets of crystalline material and devices made therefrom
EP81901098A EP0049286B1 (de) 1980-04-10 1981-04-06 Verfahren zur herstellung von blättern aus kristallinem material und aus diesen erzeugte vorrichtungen

Publications (1)

Publication Number Publication Date
DE3176676D1 true DE3176676D1 (en) 1988-04-07

Family

ID=22484124

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3177317T Expired - Lifetime DE3177317T2 (de) 1980-04-10 1981-04-06 Verfahren zur Herstellung von Blättern aus kristallinem Material
DE8686102375T Expired DE3177084D1 (en) 1980-04-10 1981-04-06 Method of producing sheets of crystalline material
DE8181901098T Expired DE3176676D1 (en) 1980-04-10 1981-04-06 Methods of producing sheets of crystalline material and devices amde therefrom

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE3177317T Expired - Lifetime DE3177317T2 (de) 1980-04-10 1981-04-06 Verfahren zur Herstellung von Blättern aus kristallinem Material
DE8686102375T Expired DE3177084D1 (en) 1980-04-10 1981-04-06 Method of producing sheets of crystalline material

Country Status (5)

Country Link
US (4) US4727047A (de)
EP (8) EP0193830A3 (de)
JP (4) JPH0421334B2 (de)
DE (3) DE3177317T2 (de)
WO (1) WO1981002948A1 (de)

Families Citing this family (324)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
NL188550C (nl) * 1981-07-02 1992-07-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4562106A (en) * 1982-06-23 1985-12-31 Massachusetts Institute Of Technology Product made by method of entraining dislocations and other crystalline defects
US4479846A (en) * 1982-06-23 1984-10-30 Massachusetts Institute Of Technology Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
JPS5993000A (ja) * 1982-11-17 1984-05-29 Yoshihiro Hamakawa 単結晶薄膜製造用基板
US4507158A (en) * 1983-08-12 1985-03-26 Hewlett-Packard Co. Trench isolated transistors in semiconductor films
US4663828A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
JPS63503345A (ja) * 1985-12-19 1988-12-02 アライド・コ−ポレ−ション Ｓｐｅ種およびレ−ザ結晶化を用いて単結晶シリコンを形成する方法
JPS62171167A (ja) * 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US4946735A (en) * 1986-02-10 1990-08-07 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
IT1191977B (it) * 1986-06-30 1988-03-31 Selenia Ind Elettroniche Tecnica per allineare con fotolitografia convenzionale una struttura sul retro di un campione con alta precisione di registrazione
GB8618373D0 (en) * 1986-07-28 1986-09-03 British Telecomm Fabrication technique
JPH07120753B2 (ja) * 1986-09-18 1995-12-20 キヤノン株式会社 半導体メモリ装置及びその製造方法
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
US4876210A (en) * 1987-04-30 1989-10-24 The University Of Delaware Solution growth of lattice mismatched and solubility mismatched heterostructures
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US4910164A (en) * 1988-07-27 1990-03-20 Texas Instruments Incorporated Method of making planarized heterostructures using selective epitaxial growth
US4944835A (en) * 1989-03-30 1990-07-31 Kopin Corporation Seeding process in zone recrystallization
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US4988641A (en) * 1989-10-10 1991-01-29 Grumman Aerospace Corporation Graphotaxially forming a photosensitive detector array
US5019177A (en) * 1989-11-03 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Monolithic tandem solar cell
US5202284A (en) * 1989-12-01 1993-04-13 Hewlett-Packard Company Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
US4990970A (en) * 1990-01-16 1991-02-05 General Motors Corporation Light emitting semiconductor having a rear reflecting surface
US5248621A (en) * 1990-10-23 1993-09-28 Canon Kabushiki Kaisha Method for producing solar cell devices of crystalline material
US5403751A (en) * 1990-11-29 1995-04-04 Canon Kabushiki Kaisha Process for producing a thin silicon solar cell
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5861929A (en) * 1990-12-31 1999-01-19 Kopin Corporation Active matrix color display with multiple cells and connection through substrate
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US5258320A (en) * 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5475514A (en) * 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
EP0539559A1 (de) * 1991-04-03 1993-05-05 Eastman Kodak Company Maske mit hoher Dauerhaftigkeit für die Trockenätzung von GaAs
US5211814A (en) * 1991-05-31 1993-05-18 Valmet Paper Machinery Inc. Wire loading device in a paper machine
JPH04365377A (ja) * 1991-06-13 1992-12-17 Agency Of Ind Science & Technol 半導体装置
EP0531232A3 (de) * 1991-08-26 1993-04-21 Eastman Kodak Company Maske mit hoher Beständigkeit für das selektive epitaxiale Wachstum von GaAs
DE4233777C2 (de) * 1991-10-17 1997-06-26 Mitsubishi Electric Corp Herstellungsverfahren für eine Halbleitereinrichtung
KR970003848B1 (ko) * 1991-10-17 1997-03-22 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조방법
DE4202455C1 (de) * 1992-01-29 1993-08-19 Siemens Ag, 8000 Muenchen, De
JP3191972B2 (ja) * 1992-01-31 2001-07-23 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2689680B1 (fr) * 1992-04-02 2001-08-10 Thomson Csf Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques.
US5261969A (en) * 1992-04-14 1993-11-16 The Boeing Company Monolithic voltage-matched tandem photovoltaic cell and method for making same
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
JP2952449B2 (ja) * 1992-06-03 1999-09-27 日石三菱株式会社 液晶表示素子用補償板の製造法
JP2594001B2 (ja) * 1992-06-05 1997-03-26 株式会社日立製作所 光電変換素子の製造方法
JPH05343712A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd タンデムヘテロ光電変換素子の製造方法
US5330918A (en) * 1992-08-31 1994-07-19 The United States Of America As Represented By The Secretary Of The Navy Method of forming a high voltage silicon-on-sapphire photocell array
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
US5705424A (en) * 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
NL9201859A (nl) * 1992-10-27 1994-05-16 Gen Electric Werkwijze voor het bereiden van chloroformiaatverbindingen.
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
EP1178530A2 (de) * 1993-09-30 2002-02-06 Kopin Corporation 3D Prozessor mit Transfer-Dünnschichtschaltungen
US20010054989A1 (en) * 1993-10-22 2001-12-27 Matthew Zavracky Color sequential display panels
US7310072B2 (en) 1993-10-22 2007-12-18 Kopin Corporation Portable communication display device
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
GB9401770D0 (en) * 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
US6326280B1 (en) 1995-02-02 2001-12-04 Sony Corporation Thin film semiconductor and method for making thin film semiconductor
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
EP0797258B1 (de) * 1996-03-18 2011-07-20 Sony Corporation Herstellungsverfahren von Dünnschichthalbleitern, Solarzellen und lichtemittierenden Dioden
JPH09260342A (ja) * 1996-03-18 1997-10-03 Mitsubishi Electric Corp 半導体装置の製造方法及び製造装置
US6114188A (en) * 1996-04-12 2000-09-05 Northeastern University Method of fabricating an integrated complex-transition metal oxide device
WO1997045827A1 (en) * 1996-05-28 1997-12-04 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6677936B2 (en) * 1996-10-31 2004-01-13 Kopin Corporation Color display system for a camera
US7321354B1 (en) 1996-10-31 2008-01-22 Kopin Corporation Microdisplay for portable communication systems
US6486862B1 (en) 1996-10-31 2002-11-26 Kopin Corporation Card reader display system
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
US6054363A (en) * 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
SG55413A1 (en) * 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
US6533874B1 (en) 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
SG67458A1 (en) * 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
US6756289B1 (en) 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
DE69738307T2 (de) 1996-12-27 2008-10-02 Canon K.K. Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle
AUPO468697A0 (en) * 1997-01-21 1997-02-13 Australian National University, The A method of producing thin silicon epitaxial films
SG63832A1 (en) * 1997-03-26 1999-03-30 Canon Kk Substrate and production method thereof
JP3492142B2 (ja) * 1997-03-27 2004-02-03 キヤノン株式会社 半導体基材の製造方法
SG68035A1 (en) 1997-03-27 1999-10-19 Canon Kk Method and apparatus for separating composite member using fluid
EP0942459B1 (de) * 1997-04-11 2012-03-21 Nichia Corporation Wachstumsmethode für einen nitrid-halbleiter
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6155909A (en) * 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6291313B1 (en) * 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US7560296B2 (en) 2000-07-07 2009-07-14 Lumilog Process for producing an epitalixal layer of galium nitride
CN1175473C (zh) * 1997-10-30 2004-11-10 住友电气工业株式会社 GaN单晶衬底及其制造方法
US20110163323A1 (en) * 1997-10-30 2011-07-07 Sumitomo Electric Industires, Ltd. GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME
US6552704B2 (en) 1997-10-31 2003-04-22 Kopin Corporation Color display with thin gap liquid crystal
US6476784B2 (en) 1997-10-31 2002-11-05 Kopin Corporation Portable display system with memory card reader
US6909419B2 (en) 1997-10-31 2005-06-21 Kopin Corporation Portable microdisplay system
SG70141A1 (en) 1997-12-26 2000-01-25 Canon Kk Sample separating apparatus and method and substrate manufacturing method
MY118019A (en) 1998-02-18 2004-08-30 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
FR2777116A1 (fr) * 1998-04-03 1999-10-01 Picogiga Sa Structure a semiconducteurs de composant photovoltaique
DE19821841C1 (de) * 1998-05-15 1999-06-24 Karlsruhe Forschzent Verfahren zur Herstellung eines Bauteils, das eine Funktionsschicht enthält
US6331208B1 (en) 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
WO2000004615A1 (en) * 1998-07-14 2000-01-27 Fujitsu Limited Semiconductor laser, semiconductor device, and method for manufacturing the same
US6368733B1 (en) * 1998-08-06 2002-04-09 Showa Denko K.K. ELO semiconductor substrate
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
US6238482B1 (en) * 1999-02-26 2001-05-29 Intel Corporation Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
JP2003506883A (ja) * 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
GB9919479D0 (en) * 1999-08-17 1999-10-20 Imperial College Island arrays
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
EP1104031B1 (de) * 1999-11-15 2012-04-11 Panasonic Corporation Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP4121697B2 (ja) * 1999-12-27 2008-07-23 シャープ株式会社 結晶シートの製造方法およびその製造装置
US6602767B2 (en) 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
DE10025746A1 (de) * 2000-05-24 2001-12-06 Juergen H Werner Herstellung großflächiger Festkörpersubstrate zum Aufwachsen epitaktischer Festkörperschichten
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
MXPA02005590A (es) * 2000-10-10 2002-09-30 Univ Columbia Metodo y aparato para procesar capas de metal delgadas.
JP4583709B2 (ja) * 2000-11-27 2010-11-17 ザ・トラスティーズ・オブ・コロンビア・ユニバーシティ・イン・ザ・シティ・オブ・ニューヨーク 基板上の半導体膜領域のレーザー結晶化処理のための方法及びマスク投影装置
FR2894990B1 (fr) 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
US6787010B2 (en) 2000-11-30 2004-09-07 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
WO2002044444A1 (en) 2000-11-30 2002-06-06 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
KR100672628B1 (ko) 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
WO2003018882A1 (en) * 2001-08-27 2003-03-06 The Trustees Of Columbia University In The City Of New York Improved polycrystalline tft uniformity through microstructure mis-alignment
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
JP4541708B2 (ja) * 2002-03-05 2010-09-08 コーニング インコーポレイテッド 光学部材および光学部材と光学系の性能を予測する方法
WO2003079082A2 (en) * 2002-03-14 2003-09-25 Corning Incorporated Fiber array and methods of fabrication
AU2003220611A1 (en) * 2002-04-01 2003-10-20 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US6867983B2 (en) 2002-08-07 2005-03-15 Avery Dennison Corporation Radio frequency identification device and method
WO2004017381A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
TWI344027B (en) * 2002-08-19 2011-06-21 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
AU2003258288A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
JP2006512749A (ja) * 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 種々の照射パターンを有するシングルショット半導体処理システム及び方法
JP2004103946A (ja) * 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
JP2006502439A (ja) * 2002-10-04 2006-01-19 コーニング インコーポレイテッド レンズアレイ、そのレンズアレイの製造方法および感光性ガラスプレート
WO2004071948A2 (en) * 2003-02-10 2004-08-26 Reveo, Inc. Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
US7341928B2 (en) * 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
JP2006049800A (ja) * 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100566675B1 (ko) * 2004-12-14 2006-03-31 삼성전자주식회사 반도체 장치와 그 제조 방법
US20060131606A1 (en) * 2004-12-18 2006-06-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures employing seed layers and related fabrication methods
EP1894234B1 (de) * 2005-02-28 2021-11-03 Silicon Genesis Corporation Substratversteifungsverfahren und System für eine Schichtübertragung.
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
EP2595177A3 (de) * 2005-05-17 2013-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Halbleiterstrukturen mit Gitterfehlanpassung und verminderter Versetzungsfehlerdichte sowie Verfahren zur Bauelementeherstellung
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
JP5481067B2 (ja) * 2005-07-26 2014-04-23 台湾積體電路製造股▲ふん▼有限公司 代替活性エリア材料の集積回路への組み込みのための解決策
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
US7528065B2 (en) * 2006-01-17 2009-05-05 International Business Machines Corporation Structure and method for MOSFET gate electrode landing pad
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US20070240759A1 (en) * 2006-04-13 2007-10-18 Applied Materials, Inc. Stacked thin film photovoltaic module and method for making same using IC processing
US7959707B2 (en) * 2006-04-28 2011-06-14 Sri International Methods for producing consolidated materials
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US20080070355A1 (en) * 2006-09-18 2008-03-20 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008039495A1 (en) * 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
US20080187018A1 (en) * 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US8304805B2 (en) * 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) * 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
US8329541B2 (en) * 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
EP2168172B1 (de) 2007-07-03 2019-05-22 Microlink Devices, Inc. Verfahren zur herstellung einer dünnfilm-iii-v-verbundsolarzelle
WO2009035746A2 (en) * 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) * 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5276852B2 (ja) * 2008-02-08 2013-08-28 昭和電工株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板の製造方法
US20090208770A1 (en) * 2008-02-14 2009-08-20 Ralf Jonczyk Semiconductor sheets and methods for fabricating the same
JP2011515834A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 均一な結晶シリコン薄膜を製造するリソグラフィ方法
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
EP2248155A4 (de) * 2008-02-29 2011-10-05 Univ Columbia Blitzlichtausheilung für dünnfilme
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
JP4247413B1 (ja) * 2008-03-19 2009-04-02 株式会社 東北テクノアーチ デバイスの製造方法
WO2009155122A2 (en) 2008-05-30 2009-12-23 Alta Devices, Inc. Epitaxial lift off stacks and methods
US20090325367A1 (en) * 2008-05-30 2009-12-31 Alta Devices, Inc. Methods and apparatus for a chemical vapor deposition reactor
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8298856B2 (en) * 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
US20100037933A1 (en) 2008-08-12 2010-02-18 Harold John Hovel Solar cell panels and method of fabricating same
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) * 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US9064810B2 (en) * 2008-10-10 2015-06-23 Alta Devices, Inc. Mesa etch method and composition for epitaxial lift off
WO2010042927A2 (en) * 2008-10-10 2010-04-15 Alta Devices, Inc. Continuous feed chemical vapor deposition
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
CN102232239A (zh) 2008-11-14 2011-11-02 纽约市哥伦比亚大学理事会 用于薄膜结晶的系统和方法
US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
KR20110099029A (ko) * 2008-12-08 2011-09-05 알타 디바이씨즈, 인크. 에피택셜 리프트 오프를 위한 다중 스택 증착
WO2010078022A2 (en) 2008-12-17 2010-07-08 Alta Devices, Inc. Tape-based epitaxial lift off apparatuses and methods
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
EP2221853B1 (de) * 2009-02-19 2012-04-25 S.O.I. TEC Silicon Relaxation und Übertragung von verspannten Materialschichten
CN102414837B (zh) 2009-02-27 2016-04-20 奥塔装置公司 用于沉积和外延剥离过程的平铺衬底
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
KR20120027479A (ko) 2009-07-17 2012-03-21 소이텍 아연, 규소 및 산소 기재의 결합층을 사용하는 결합 방법 및 상응하는 구조
US8466447B2 (en) 2009-08-06 2013-06-18 Alliance For Sustainable Energy, Llc Back contact to film silicon on metal for photovoltaic cells
US20110030773A1 (en) * 2009-08-06 2011-02-10 Alliance For Sustainable Energy, Llc Photovoltaic cell with back-surface reflectivity scattering
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
US11393683B2 (en) 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
JP5706670B2 (ja) 2009-11-24 2015-04-22 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US20110139249A1 (en) * 2009-12-10 2011-06-16 Uriel Solar Inc. High Power Efficiency Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
JP2011243651A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 半導体装置、貼り合せ基板およびそれらの製造方法
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
JP2012054364A (ja) * 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8654435B2 (en) 2010-10-06 2014-02-18 Fusao Ishii Microwindow device
US8609453B2 (en) 2010-11-22 2013-12-17 International Business Machines Corporation Low cost solar cell manufacture method employing a reusable substrate
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
JP2014067869A (ja) * 2012-09-26 2014-04-17 Nobuyuki Akiyama ヘテロエピタキシャル単結晶の製造方法、ヘテロ接合太陽電池の製造方法、ヘテロエピタキシャル単結晶、ヘテロ接合太陽電池
US9970126B2 (en) * 2013-02-26 2018-05-15 Massachusetts Institute Of Technology Production of free-standing crystalline material layers
JP6335099B2 (ja) * 2014-11-04 2018-05-30 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
EP3347914A4 (de) 2015-09-08 2019-09-25 Massachusetts Institute of Technology Systeme und verfahren für graphenbasierte schichtübertragung
US11189432B2 (en) 2016-10-24 2021-11-30 Indian Institute Of Technology, Guwahati Microfluidic electrical energy harvester
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
WO2018156877A1 (en) 2017-02-24 2018-08-30 Massachusetts Institute Of Technology Apparatus and methods for curved focal plane array
US20200286786A1 (en) * 2017-11-14 2020-09-10 Massachusetts Institute Of Technology Epitaxial growth and transfer via patterned two-dimensional (2d) layers
WO2020138226A1 (ja) * 2018-12-26 2020-07-02 京セラ株式会社 半導体素子の製造方法、半導体素子および基板
CN111690986B (zh) * 2020-06-22 2021-05-25 江苏超芯星半导体有限公司 一种晶体与晶体托的分离方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1047911B (de) * 1955-06-07 1958-12-31 Dr Erwin Daniels Verfahren zur Herstellung temperaturempfindlicher Hochohmwiderstaende geringer Waermetraegheit, insbesondere zur Strahlungsmessung
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
FR1129220A (fr) * 1955-07-25 1957-01-17 Piles photovoltaïques à rendement élevé
US2922903A (en) * 1956-09-11 1960-01-26 Bendix Aviat Corp Ignition apparatus
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
US3112997A (en) * 1958-10-01 1963-12-03 Merck & Co Inc Process for producing pure crystalline silicon by pyrolysis
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
US3133336A (en) * 1959-12-30 1964-05-19 Ibm Semiconductor device fabrication
NL262949A (de) * 1960-04-02 1900-01-01
NL270516A (de) * 1960-11-30
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds
NL278170A (de) * 1961-05-09 1900-01-01
DE1289831B (de) * 1961-12-22 1969-02-27 Siemens Ag Verfahren zur Herstellung duenner frei tragender Folien aus einkristallinem Halbleitermaterial
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3370980A (en) * 1963-08-19 1968-02-27 Litton Systems Inc Method for orienting single crystal films on polycrystalline substrates
US3336159A (en) * 1963-10-07 1967-08-15 Ncr Co Method for growing single thin film crystals
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3429756A (en) * 1965-02-05 1969-02-25 Monsanto Co Method for the preparation of inorganic single crystal and polycrystalline electronic materials
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3433686A (en) * 1966-01-06 1969-03-18 Ibm Process of bonding chips in a substrate recess by epitaxial growth of the bonding material
US3905037A (en) * 1966-12-30 1975-09-09 Texas Instruments Inc Integrated circuit components in insulated islands of integrated semiconductor materials in a single substrate
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
US3884733A (en) * 1971-08-13 1975-05-20 Texas Instruments Inc Dielectric isolation process
JPS4942350A (de) * 1972-08-16 1974-04-20
US3846198A (en) * 1972-10-02 1974-11-05 Rca Corp Method of making semiconductor devices having thin active regions of the semiconductor material
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
FR2217068B1 (de) * 1973-02-13 1978-10-20 Labo Electronique Physique
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
JPS5084189A (de) * 1973-11-26 1975-07-07
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US4095004A (en) * 1975-03-31 1978-06-13 Hughes Aircraft Company Process for low temperature stoichiometric recrystallization of compound semiconductor films
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
US4053350A (en) * 1975-07-11 1977-10-11 Rca Corporation Methods of defining regions of crystalline material of the group iii-v compounds
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
US4116751A (en) * 1975-10-08 1978-09-26 Solomon Zaromb Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
JPS5329587A (en) * 1976-08-31 1978-03-18 Nippon Telegr & Teleph Corp <Ntt> Experimental device for testing temperature characteristic of communication cable
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
JPS6311789B2 (de) * 1978-05-12 1988-03-16 Sutepanoitsuchi Ridorenko Nikorai
FR2432770A1 (fr) * 1978-08-02 1980-02-29 Commissariat Energie Atomique Generateur photovoltaique
NL7810549A (nl) * 1978-10-23 1980-04-25 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4168998A (en) * 1978-12-06 1979-09-25 Mitsubishi Monsanto Chemical Co. Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
JPS5723218A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of semiconductor device
JPS5776830A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor substrate
JPS58500048A (ja) * 1981-02-04 1983-01-06 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド ４族半導体材料を基礎とした構造の成長
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS58130517A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 単結晶薄膜の製造方法
US4670088A (en) * 1982-03-18 1987-06-02 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
US4494303A (en) * 1983-03-31 1985-01-22 At&T Bell Laboratories Method of making dielectrically isolated silicon devices
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4444620A (en) * 1983-09-12 1984-04-24 Bell Telephone Laboratories, Incorporated Growth of oriented single crystal semiconductor on insulator

Also Published As

Publication number Publication date
WO1981002948A1 (en) 1981-10-15
EP0191503A3 (de) 1986-09-10
EP0192280A2 (de) 1986-08-27
EP0191505A3 (de) 1986-09-10
US5549747A (en) 1996-08-27
JPH02283077A (ja) 1990-11-20
JPS57500670A (de) 1982-04-15
EP0506146A2 (de) 1992-09-30
JPH02283014A (ja) 1990-11-20
EP0193830A2 (de) 1986-09-10
DE3177317T2 (de) 1999-02-25
EP0192280A3 (de) 1986-09-10
EP0194495B1 (de) 1998-07-15
DE3177317D1 (de) 1998-08-20
JP2584164B2 (ja) 1997-02-19
EP0193830A3 (de) 1986-10-01
DE3177084D1 (en) 1989-09-21
EP0049286A4 (de) 1982-08-05
US4727047A (en) 1988-02-23
EP0191503A2 (de) 1986-08-20
US4837182A (en) 1989-06-06
EP0049286A1 (de) 1982-04-14
JPH0421334B2 (de) 1992-04-09
EP0191504A3 (en) 1986-09-10
EP0191504A2 (de) 1986-08-20
EP0194495A1 (de) 1986-09-17
JPH0620945A (ja) 1994-01-28
US4816420A (en) 1989-03-28
EP0049286B1 (de) 1988-03-02
EP0191504B1 (de) 1989-08-16
EP0191505A2 (de) 1986-08-20
EP0506146A3 (de) 1995-02-01

Similar Documents

Publication Publication Date Title
DE3176676D1 (en) Methods of producing sheets of crystalline material and devices amde therefrom
EP0078553A3 (en) Packaging sheet and method of producing it
HK1007708A1 (en) Microporous sheet material method of making and articles made therewith
JPS5727996A (en) Manufacture of single crystal
JPS5632782A (en) Piezooelectric transducer and method of manufacturing same
IL68736A0 (en) Method of producing single crystal materials
JPS572357A (en) Formation material and manufacture
GB8413839D0 (en) Making sheet of material
JPS5790881A (en) Pile structure and method of producing same
JPS5729672A (en) Production of sheet material
DE3474969D1 (en) Method of producing amorphous metallic material
GB2078769B (en) Battery separator material and method of forming the same
GB2085884B (en) Crystals of b-nicotinamide-adenine-dinucleotide and process for preparing the same
GB2038228B (en) Manufacture of sheets
GB2140837B (en) Sheet of material and method of making same
GB8413842D0 (en) Making sheet of material
DE3061025D1 (en) Crystalline co-polybenzyls and process of producing them
GB2079211B (en) Spark perforation of sheet material
GB2058023B (en) Defining sets of sheets
JPS5757591A (en) Cushion material and manufacture of cushion material
JPS56118933A (en) Production of flange material
JPS5724940A (en) Method of producing copying material
JPS54157619A (en) Speaker vibrating plate and method of fabricating same
GB2067431B (en) Method of producing thin single-crystal sheets
JPS55103949A (en) Pipeecored sheet body and method of producing same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee