DE3177199D1 - Speichervorrichtung mit leseverstaerker. - Google Patents

Speichervorrichtung mit leseverstaerker.

Info

Publication number: DE3177199D1
Authority: DE; Germany
Prior art keywords: memory device; reading amplifier; amplifier; reading; memory
Prior art date: 1980-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686201858T

Other languages

English (en)

Inventor

Iwahashi Hiroshi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-09-25

Filing date

1981-09-16

Publication date

1990-08-16

1981-09-16 Application filed by Toshiba Corp filed Critical Toshiba Corp

1990-08-16 Application granted granted Critical

1990-08-16 Publication of DE3177199D1 publication Critical patent/DE3177199D1/de

2001-09-17 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers

DE8686201858T 1980-09-25 1981-09-16 Speichervorrichtung mit leseverstaerker. Expired - Lifetime DE3177199D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP55133559A JPS5856198B2 (ja)	1980-09-25	1980-09-25	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3177199D1 true DE3177199D1 (de)	1990-08-16

Family

ID=15107631

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE8181304262T Expired DE3176940D1 (en)	1980-09-25	1981-09-16	A memory device including a sense amplifier
DE8686201858T Expired - Lifetime DE3177199D1 (de)	1980-09-25	1981-09-16	Speichervorrichtung mit leseverstaerker.

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE8181304262T Expired DE3176940D1 (en)	1980-09-25	1981-09-16	A memory device including a sense amplifier

Country Status (4)

Country	Link
US (1)	US4445203A (de)
EP (2)	EP0053428B1 (de)
JP (1)	JPS5856198B2 (de)
DE (2)	DE3176940D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4435658A (en) *	1981-02-17	1984-03-06	Burroughs Corporation	Two-level threshold circuitry for large scale integrated circuit memories
JPS5835783A (ja) *	1981-08-24	1983-03-02	Fujitsu Ltd	半導体メモリ
US4488264A (en) *	1982-06-10	1984-12-11	Dshkhunian Valery	Transistor storage
EP0100011B1 (de) *	1982-07-26	1990-10-24	Kabushiki Kaisha Toshiba	Halbleiterspeicheranlage mit Datenübertragungs- und Erkennungsmitteln
JPS59126315A (ja) *	1982-12-24	1984-07-20	Fujitsu Ltd	比較回路
US4636664A (en) *	1983-01-10	1987-01-13	Ncr Corporation	Current sinking responsive MOS sense amplifier
US4654826A (en) *	1984-08-20	1987-03-31	National Semiconductor Corporation	Single device transfer static latch
US4719600A (en) *	1986-02-18	1988-01-12	International Business Machines Corporation	Sense circuit for multilevel storage system
JPS62217493A (ja) *	1986-02-27	1987-09-24	Fujitsu Ltd	半導体不揮発性記憶装置
JPS62222498A (ja) *	1986-03-10	1987-09-30	Fujitsu Ltd	消去及び書き込み可能な読み出し専用メモリ
US4831284A (en) *	1988-03-22	1989-05-16	International Business Machines Corporation	Two level differential current switch MESFET logic
JPH0274665A (ja) *	1988-09-10	1990-03-14	Katsuo Shinoda	衣服用生地延反コンベヤ及び該生地の裁断方法
US5023838A (en) *	1988-12-02	1991-06-11	Ncr Corporation	Random access memory device with integral logic capability
US5293345A (en) *	1989-06-12	1994-03-08	Kabushiki Kaisha Toshiba	Semiconductor memory device having a data detection circuit with two reference potentials
JP2530055B2 (ja) *	1990-08-30	1996-09-04	株式会社東芝	半導体集積回路
JP2680936B2 (ja) *	1991-02-13	1997-11-19	シャープ株式会社	半導体記憶装置
US5272674A (en) *	1992-09-21	1993-12-21	Atmel Corporation	High speed memory sense amplifier with noise reduction
US5455802A (en) *	1992-12-22	1995-10-03	Sgs-Thomson Microelectronics, Inc.	Dual dynamic sense amplifiers for a memory array
US5982673A (en) *	1997-09-30	1999-11-09	Siemens Aktiengesellschaft	Secondary sense amplifier with window discriminator for self-timed operation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3648071A (en) *	1970-02-04	1972-03-07	Nat Semiconductor Corp	High-speed mos sense amplifier
US4023122A (en) *	1975-01-28	1977-05-10	Nippon Electric Company, Ltd.	Signal generating circuit
US3953839A (en) *	1975-04-10	1976-04-27	International Business Machines Corporation	Bit circuitry for enhance-deplete ram
US4094008A (en) *	1976-06-18	1978-06-06	Ncr Corporation	Alterable capacitor memory array
US4134151A (en) *	1977-05-02	1979-01-09	Electronic Memories & Magnetics Corporation	Single sense line memory cell
US4123799A (en) *	1977-09-19	1978-10-31	Motorola, Inc.	High speed IFGET sense amplifier/latch
JPS5914832B2 (ja) *	1977-12-07	1984-04-06	株式会社東芝	電圧センス回路
JPS553210A (en) *	1978-06-21	1980-01-11	Toshiba Corp	Waveform shaping circuit
JPS5824874B2 (ja) *	1979-02-07	1983-05-24	富士通株式会社	センス回路

1980
- 1980-09-25 JP JP55133559A patent/JPS5856198B2/ja not_active Expired
1981
- 1981-09-16 DE DE8181304262T patent/DE3176940D1/de not_active Expired
- 1981-09-16 DE DE8686201858T patent/DE3177199D1/de not_active Expired - Lifetime
- 1981-09-16 EP EP81304262A patent/EP0053428B1/de not_active Expired
- 1981-09-16 EP EP86201858A patent/EP0227128B1/de not_active Expired
- 1981-09-21 US US06/304,036 patent/US4445203A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS5758297A (en)	1982-04-07
US4445203A (en)	1984-04-24
EP0227128A2 (de)	1987-07-01
EP0053428A2 (de)	1982-06-09
EP0227128B1 (de)	1990-07-11
EP0053428B1 (de)	1988-11-17
JPS5856198B2 (ja)	1983-12-13
EP0053428A3 (en)	1984-04-04
DE3176940D1 (en)	1988-12-22
EP0227128A3 (en)	1987-10-28

Legal Events

Date	Code	Title	Description
1991-08-08	8364	No opposition during term of opposition
1999-11-11	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3280445T2 (de)	1994-03-03	Festwertspeicher.
NL191045C (nl)	1994-12-16	Elastische geheugeninrichting.
DE3177183D1 (de)	1990-06-21	Halbleiterspeichergeraet.
DE3177169D1 (de)	1990-05-03	Halbleiterspeicheranordnung.
NL187944C (nl)	1992-02-17	Laadinrichting.
NO811355L (no)	1981-10-23	Perkutananordning.
NL7713945A (nl)	1978-06-26	Schijvengeheugen.
DE3177199D1 (de)	1990-08-16	Speichervorrichtung mit leseverstaerker.
NL191695B (nl)	1995-11-01	Schijfgeheugeninrichting.
NL7700762A (nl)	1977-08-11	Leesversterker.
DE3483121D1 (de)	1990-10-11	Leseverstaerker.
IT7921063A0 (it)	1979-03-16	Dispositivo scrivente automatico.
NL178369C (nl)	1986-03-03	Geheugeninrichting.
DE3177270D1 (de)	1992-02-27	Halbleiterspeicher mit datenprogrammierzeit.
DE3587592D1 (de)	1993-10-28	Halbleiterspeicheranordnung mit Leseverstärkern.
NL7711511A (nl)	1978-05-05	Geheugenschijf.
NL185803C (nl)	1990-07-16	Inleesinrichting.
IT7924607A0 (it)	1979-07-24	Amplificatore di lettura precaricato asimmetricamente.
SE8203553L (sv)	1982-12-10	Informationsminnesanordning
DE3482654D1 (de)	1990-08-09	Datenspeichergeraet.
NL7904796A (nl)	1979-12-21	Codesignaaluitleesinrichting.
NL193299B (nl)	1999-01-04	Videobandapparaat.
IT8122051A0 (it)	1981-05-29	Complesso amplificatore integrato.
NL175236C (nl)	1984-10-01	Leesversterker.
DE3484669D1 (de)	1991-07-11	Leseverstaerker.