DE3370832D1 - Photo-assisted cvd - Google Patents

Photo-assisted cvd

Info

Publication number
DE3370832D1
DE3370832D1 DE8383302597T DE3370832T DE3370832D1 DE 3370832 D1 DE3370832 D1 DE 3370832D1 DE 8383302597 T DE8383302597 T DE 8383302597T DE 3370832 T DE3370832 T DE 3370832T DE 3370832 D1 DE3370832 D1 DE 3370832D1
Authority
DE
Germany
Prior art keywords
gas
substrate
film
photo
energy spectrum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383302597T
Other languages
English (en)
Inventor
David Allred
Jaime Reyes
Lee Walter
Stanford Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3370832D1 publication Critical patent/DE3370832D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
DE8383302597T 1982-05-13 1983-05-09 Photo-assisted cvd Expired DE3370832D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/377,738 US4435445A (en) 1982-05-13 1982-05-13 Photo-assisted CVD

Publications (1)

Publication Number Publication Date
DE3370832D1 true DE3370832D1 (en) 1987-05-14

Family

ID=23490323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383302597T Expired DE3370832D1 (en) 1982-05-13 1983-05-09 Photo-assisted cvd

Country Status (13)

Country Link
US (1) US4435445A (de)
EP (1) EP0095275B1 (de)
JP (1) JPS5964770A (de)
AT (1) ATE26469T1 (de)
AU (1) AU555506B2 (de)
BR (1) BR8302417A (de)
CA (1) CA1209091A (de)
DE (1) DE3370832D1 (de)
IL (1) IL68590A (de)
IN (1) IN159155B (de)
MX (1) MX163318A (de)
PH (1) PH18523A (de)
ZA (1) ZA833368B (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
JPS5989407A (ja) * 1982-11-15 1984-05-23 Mitsui Toatsu Chem Inc アモルフアスシリコン膜の形成方法
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法
JPS60116778A (ja) * 1983-11-23 1985-06-24 ジエミニ　リサーチ，インコーポレイテツド 化学蒸着方法及び装置
US4544423A (en) * 1984-02-10 1985-10-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon semiconductor and process for same
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
JPH07107190B2 (ja) * 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
JPS60206446A (ja) * 1984-03-30 1985-10-18 Canon Inc 光化学気相成長装置
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766906B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 ＧａＡｓエピタキシャル成長方法
US4731255A (en) * 1984-09-26 1988-03-15 Applied Materials Japan, Inc. Gas-phase growth process and an apparatus for the same
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
FR2579825B1 (fr) * 1985-03-28 1991-05-24 Sumitomo Electric Industries Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise
US4719122A (en) * 1985-04-08 1988-01-12 Semiconductor Energy Laboratory Co., Ltd. CVD method and apparatus for forming a film
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4694777A (en) * 1985-07-03 1987-09-22 Roche Gregory A Apparatus for, and methods of, depositing a substance on a substrate
US5769950A (en) * 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US5261961A (en) * 1985-07-23 1993-11-16 Canon Kabushiki Kaisha Device for forming deposited film
US6077718A (en) * 1985-07-23 2000-06-20 Canon Kabushiki Kaisha Method for forming deposited film
US4719123A (en) * 1985-08-05 1988-01-12 Sanyo Electric Co., Ltd. Method for fabricating periodically multilayered film
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
EP0214690B1 (de) * 1985-09-06 1992-03-25 Philips Electronics Uk Limited Herstellungsverfahren einer Halbleitervorrichtung
US4910044A (en) * 1985-09-30 1990-03-20 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light emitting device and application thereof
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4654226A (en) * 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US4775203A (en) * 1987-02-13 1988-10-04 General Electric Company Optical scattering free metal oxide films and methods of making the same
US4816294A (en) * 1987-05-04 1989-03-28 Midwest Research Institute Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes
US5229081A (en) * 1988-02-12 1993-07-20 Regal Joint Co., Ltd. Apparatus for semiconductor process including photo-excitation process
DD274830A1 (de) * 1988-08-12 1990-01-03 Elektromat Veb Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
US4940505A (en) * 1988-12-02 1990-07-10 Eaton Corporation Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation
US5558884A (en) * 1989-04-03 1996-09-24 Omnichrome Corporation System for rapidly producing either integrated circuits on a substrate, Interconnections on a printed circuit board or rapidly performing lithography
US5005519A (en) * 1990-03-14 1991-04-09 Fusion Systems Corporation Reaction chamber having non-clouded window
US5089872A (en) * 1990-04-27 1992-02-18 North Carolina State University Selective germanium deposition on silicon and resulting structures
US5101247A (en) * 1990-04-27 1992-03-31 North Carolina State University Germanium silicon dioxide gate MOSFET
JP3002013B2 (ja) * 1991-06-04 2000-01-24 松下技研株式会社 薄膜および多層膜の製造方法およびその製造装置
US5215588A (en) * 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US5422534A (en) * 1992-11-18 1995-06-06 General Electric Company Tantala-silica interference filters and lamps using same
US6067931A (en) * 1996-11-04 2000-05-30 General Electric Company Thermal processor for semiconductor wafers
JP2001506062A (ja) * 1997-10-14 2001-05-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 低温ｃｖｄによる半導体装置の製造方法
US6495800B2 (en) 1999-08-23 2002-12-17 Carson T. Richert Continuous-conduction wafer bump reflow system
US6382816B1 (en) 1999-12-23 2002-05-07 General Eectric Company Protected coating for energy efficient lamp
US7513815B2 (en) * 1999-12-23 2009-04-07 General Electric Company Optimal silicon dioxide protection layer thickness for silver lamp reflector
US20010032666A1 (en) 2000-03-24 2001-10-25 Inegrated Power Solutions Inc. Integrated capacitor-like battery and associated method
JP3598381B2 (ja) * 2002-07-02 2004-12-08 独立行政法人物質・材料研究機構 一般式；ＢＮで示され、六方晶系５Ｈ型ないしは６Ｈ型多形構造を有し、紫外域で発光するｓｐ３結合型窒化ホウ素とその製造方法、及びこれを利用した機能性材料
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US20050023983A1 (en) * 2003-08-01 2005-02-03 Rajasingh Israel Optimal silicon dioxide protection layer thickness for silver lamp reflector
US7211351B2 (en) * 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
WO2005067645A2 (en) * 2004-01-06 2005-07-28 Cymbet Corporation Layered barrier structure having one or more definable layers and method
JP2009502011A (ja) * 2005-07-15 2009-01-22 シンベット・コーポレイション 軟質および硬質電解質層付き薄膜電池および方法
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US7345414B1 (en) 2006-10-04 2008-03-18 General Electric Company Lamp for night vision system
CN102209800A (zh) * 2008-09-22 2011-10-05 贝克顿·迪金森公司 使用光解和/或热化学气相沉积法涂布容器内部的系统、设备和方法
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9029809B2 (en) 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
CN105103271B (zh) * 2013-03-15 2018-05-22 应用材料公司 用于脉冲式光激发沉积与蚀刻的装置与方法
US10174424B2 (en) 2013-04-25 2019-01-08 Polyvalor, Limited Partnership Methods for the photo-initiated chemical vapor deposition (PICVD) of coatings and coatings produced by these methods
US10143993B2 (en) * 2015-08-18 2018-12-04 Lam Research Corporation Radical generator and method for generating ammonia radicals
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1345943A (fr) * 1962-01-29 1963-12-13 Hughes Aircraft Co Procédé de croissance épitaxiale d'une matière semi-conductrice
US3200018A (en) 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
US3271180A (en) 1962-06-19 1966-09-06 Ibm Photolytic processes for fabricating thin film patterns
GB975497A (en) * 1963-09-13 1964-11-18 Temescal Metallurgical Corp High vacuum observation apparatus
US3490961A (en) 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
DE1900116C3 (de) 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
DD107313A1 (de) * 1973-03-08 1974-07-20
US4100418A (en) 1977-03-04 1978-07-11 Gene D. Hoffman Method of and means for filtering the infrared rays from a source of UV radiation
US4265932A (en) * 1979-08-02 1981-05-05 Hughes Aircraft Company Mobile transparent window apparatus and method for photochemical vapor deposition
US4340617A (en) 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
JPS6021224B2 (ja) * 1980-10-08 1985-05-25 日本電気株式会社 レーザー薄膜形成装置
US4348428A (en) 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate

Also Published As

Publication number Publication date
IL68590A0 (en) 1983-09-30
CA1209091A (en) 1986-08-05
IL68590A (en) 1986-04-29
EP0095275A2 (de) 1983-11-30
ZA833368B (en) 1984-02-29
IN159155B (de) 1987-04-04
US4435445A (en) 1984-03-06
EP0095275B1 (de) 1987-04-08
AU555506B2 (en) 1986-09-25
PH18523A (en) 1985-08-02
AU1430683A (en) 1983-11-17
EP0095275A3 (en) 1984-01-25
ATE26469T1 (de) 1987-04-15
JPS5964770A (ja) 1984-04-12
BR8302417A (pt) 1984-01-10
MX163318A (es) 1992-04-20

Similar Documents

Publication Publication Date Title
DE3370832D1 (en) Photo-assisted cvd
GB2089840B (en) Chemical vapour deposition apparatus incorporating radiant heat source for substrate
GB2141444A (en) Chemical vapor deposition of titanium nitride and like films
GB2133764B (en) Planetary substrate support apparatus for vapour vacuum depositing coating
GB2085422B (en) Process and apparatus for chemical vapor deposition of films on silicon wafers
TW352457B (en) Chemical vapor phase growth apparatus (3)
US4525382A (en) Photochemical vapor deposition apparatus
ES457595A1 (es) Procedimiento para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
ES448758A1 (es) Un metodo y su correspondiente aparato para revestir vidrio plano.
BR9505647A (pt) Processo e aparelho para o revestimento da superficie interna de um recipiente sensivel a temperatura
EP0308946A3 (en) Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
GB2151662B (en) Device for enriching a carrier gas with the vapour of a slightly volatile material for chemical vapour deposition method
IL66878A (en) Method and apparatus for the vapor deposition of material upon a substrate
KR850001974B1 (ko) 광화학적 증착방법 및 장치
GB2260342B (en) Process for the selective deposition of thin diamond film by chemical vapour deposition
GB2124468B (en) Process and apparatus for the continuous electrostatic deposition of a powdered substance particularly dextrose on a food substrate
EP0095384A3 (de) Vorrichtung für eine Vakuumbeschichtung
JPS5351187A (en) Gas phase chemical evaporation apparatus
DE3664793D1 (en) Chemical vapor deposition method for the thin film of semiconductor
JPS60209248A (ja) 光化学反応装置
ES466902A1 (es) Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno.
AU6284186A (en) Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
JPS57136931A (en) Photochemical reaction device
JPS57136932A (en) Photochemical reaction device
ES8402881A1 (es) Procedimiento para la fabricacion de una capa selectivamente absorvente para colectores solares.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee