DE3370897D1 - Method and apparatus for obtaining particle beams the density of which is spatially modulated, application to etching and to ion implantation - Google Patents
Method and apparatus for obtaining particle beams the density of which is spatially modulated, application to etching and to ion implantationInfo
- Publication number
- DE3370897D1 DE3370897D1 DE8383402328T DE3370897T DE3370897D1 DE 3370897 D1 DE3370897 D1 DE 3370897D1 DE 8383402328 T DE8383402328 T DE 8383402328T DE 3370897 T DE3370897 T DE 3370897T DE 3370897 D1 DE3370897 D1 DE 3370897D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- density
- application
- ion implantation
- particle beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
- H05H3/02—Molecular or atomic beam generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Particle Accelerators (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8220564A FR2537768A1 (fr) | 1982-12-08 | 1982-12-08 | Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3370897D1 true DE3370897D1 (en) | 1987-05-14 |
Family
ID=9279894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383402328T Expired DE3370897D1 (en) | 1982-12-08 | 1983-12-02 | Method and apparatus for obtaining particle beams the density of which is spatially modulated, application to etching and to ion implantation |
Country Status (5)
Country | Link |
---|---|
US (1) | US4536657A (de) |
EP (1) | EP0112230B1 (de) |
JP (1) | JPS59139539A (de) |
DE (1) | DE3370897D1 (de) |
FR (1) | FR2537768A1 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631096A (en) * | 1984-10-01 | 1986-12-23 | Deutsche Forschungs-Und Versuchsanstalt Fur Luft-Und Raumfahrt E.V. | High energy materials containing metastable helium, a process for producing same and applications thereof |
JPH07107898B2 (ja) * | 1985-04-26 | 1995-11-15 | 株式会社日立製作所 | 表面処理方法および装置 |
JPS6243136A (ja) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | 半導体製造装置 |
US4692627A (en) * | 1985-10-01 | 1987-09-08 | Mitsubishi Denki Kabushiki Kaisha | Ion beam generator |
JP2588172B2 (ja) * | 1986-06-11 | 1997-03-05 | 株式会社日立製作所 | 表面処理装置 |
JPH0834203B2 (ja) * | 1986-07-01 | 1996-03-29 | 株式会社日立製作所 | ドライエツチング装置 |
US4914305A (en) * | 1989-01-04 | 1990-04-03 | Eaton Corporation | Uniform cross section ion beam system |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
JP2830849B2 (ja) * | 1996-07-19 | 1998-12-02 | 日本電気株式会社 | 原子線ホログラフィを用いる原子線パターン形成方法 |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6155909A (en) | 1997-05-12 | 2000-12-05 | Silicon Genesis Corporation | Controlled cleavage system using pressurized fluid |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
FR2773261B1 (fr) * | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
JP2003506883A (ja) | 1999-08-10 | 2003-02-18 | シリコン ジェネシス コーポレイション | 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
WO2002009483A1 (en) * | 2000-07-26 | 2002-01-31 | The Regents Of The University Of California | Manipulation of live cells and inorganic objects with optical micro beam arrays |
US6936811B2 (en) * | 2000-11-13 | 2005-08-30 | Genoptix, Inc. | Method for separating micro-particles |
US20020123112A1 (en) * | 2000-11-13 | 2002-09-05 | Genoptix | Methods for increasing detection sensitivity in optical dielectric sorting systems |
US6784420B2 (en) * | 2000-11-13 | 2004-08-31 | Genoptix, Inc. | Method of separating particles using an optical gradient |
US20030007894A1 (en) * | 2001-04-27 | 2003-01-09 | Genoptix | Methods and apparatus for use of optical forces for identification, characterization and/or sorting of particles |
US6833542B2 (en) * | 2000-11-13 | 2004-12-21 | Genoptix, Inc. | Method for sorting particles |
US20020160470A1 (en) * | 2000-11-13 | 2002-10-31 | Genoptix | Methods and apparatus for generating and utilizing linear moving optical gradients |
US6744038B2 (en) | 2000-11-13 | 2004-06-01 | Genoptix, Inc. | Methods of separating particles using an optical gradient |
US6778724B2 (en) | 2000-11-28 | 2004-08-17 | The Regents Of The University Of California | Optical switching and sorting of biological samples and microparticles transported in a micro-fluidic device, including integrated bio-chip devices |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US20030194755A1 (en) * | 2001-04-27 | 2003-10-16 | Genoptix, Inc. | Early detection of apoptotic events and apoptosis using optophoretic analysis |
US20040009540A1 (en) * | 2001-04-27 | 2004-01-15 | Genoptix, Inc | Detection and evaluation of cancer cells using optophoretic analysis |
US20040033539A1 (en) * | 2002-05-01 | 2004-02-19 | Genoptix, Inc | Method of using optical interrogation to determine a biological property of a cell or population of cells |
US20030211461A1 (en) * | 2002-05-01 | 2003-11-13 | Genoptix, Inc | Optophoretic detection of durgs exhibiting inhibitory effect on Bcr-Abl positive tumor cells |
US20040053209A1 (en) * | 2002-09-12 | 2004-03-18 | Genoptix, Inc | Detection and evaluation of topoisomerase inhibitors using optophoretic analysis |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US20040067167A1 (en) * | 2002-10-08 | 2004-04-08 | Genoptix, Inc. | Methods and apparatus for optophoretic diagnosis of cells and particles |
FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
US20040121474A1 (en) * | 2002-12-19 | 2004-06-24 | Genoptix, Inc | Detection and evaluation of chemically-mediated and ligand-mediated t-cell activation using optophoretic analysis |
US20040121307A1 (en) * | 2002-12-19 | 2004-06-24 | Genoptix, Inc | Early detection of cellular differentiation using optophoresis |
US7196337B2 (en) * | 2003-05-05 | 2007-03-27 | Cabot Microelectronics Corporation | Particle processing apparatus and methods |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
CN1860363B (zh) * | 2003-08-28 | 2011-12-28 | 赛路拉公司 | 用于在微流通道网络中使用光学开关将细胞分类的方法和设备 |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551213A (en) * | 1968-09-04 | 1970-12-29 | Bell Telephone Labor Inc | Geometrically selective ion bombardment by means of the photoelectric effect |
US3914655A (en) * | 1973-06-28 | 1975-10-21 | Ibm | High brightness ion source |
US4074139A (en) * | 1976-12-27 | 1978-02-14 | Rca Corporation | Apparatus and method for maskless ion implantation |
-
1982
- 1982-12-08 FR FR8220564A patent/FR2537768A1/fr active Granted
-
1983
- 1983-12-02 DE DE8383402328T patent/DE3370897D1/de not_active Expired
- 1983-12-02 EP EP83402328A patent/EP0112230B1/de not_active Expired
- 1983-12-07 US US06/558,950 patent/US4536657A/en not_active Expired - Fee Related
- 1983-12-08 JP JP58230721A patent/JPS59139539A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0112230A1 (de) | 1984-06-27 |
US4536657A (en) | 1985-08-20 |
FR2537768A1 (fr) | 1984-06-15 |
FR2537768B1 (de) | 1985-02-08 |
JPS59139539A (ja) | 1984-08-10 |
EP0112230B1 (de) | 1987-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |