DE3377556D1 - Method for leakage current characterization in the manufacture of dynamic random access memory cells - Google Patents

Method for leakage current characterization in the manufacture of dynamic random access memory cells

Info

Publication number
DE3377556D1
DE3377556D1 DE8383112635T DE3377556T DE3377556D1 DE 3377556 D1 DE3377556 D1 DE 3377556D1 DE 8383112635 T DE8383112635 T DE 8383112635T DE 3377556 T DE3377556 T DE 3377556T DE 3377556 D1 DE3377556 D1 DE 3377556D1
Authority
DE
Germany
Prior art keywords
manufacture
random access
memory cells
access memory
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383112635T
Other languages
English (en)
Inventor
Satya Narayan Chakravarti
Paul Louis Garbarino
Donald Abram Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3377556D1 publication Critical patent/DE3377556D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
DE8383112635T 1982-12-30 1983-12-15 Method for leakage current characterization in the manufacture of dynamic random access memory cells Expired DE3377556D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/454,900 US4542340A (en) 1982-12-30 1982-12-30 Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells

Publications (1)

Publication Number Publication Date
DE3377556D1 true DE3377556D1 (en) 1988-09-01

Family

ID=23806531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383112635T Expired DE3377556D1 (en) 1982-12-30 1983-12-15 Method for leakage current characterization in the manufacture of dynamic random access memory cells

Country Status (4)

Country Link
US (1) US4542340A (de)
EP (1) EP0113087B1 (de)
JP (1) JPS6029230B2 (de)
DE (1) DE3377556D1 (de)

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US5208530A (en) * 1986-09-19 1993-05-04 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US4835466A (en) * 1987-02-06 1989-05-30 Fairchild Semiconductor Corporation Apparatus and method for detecting spot defects in integrated circuits
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US4835458A (en) * 1987-11-09 1989-05-30 Intel Corporation Signature analysis technique for defect characterization of CMOS static RAM cell failures
JPH01165424U (de) * 1988-05-13 1989-11-20
US4896108A (en) * 1988-07-25 1990-01-23 American Telephone And Telegraph Company, At&T Bell Laboratories Test circuit for measuring specific contact resistivity of self-aligned contacts in integrated circuits
JP2886176B2 (ja) * 1989-03-23 1999-04-26 三菱電機株式会社 埋め込みチャネルの物性特性測定法
US5196787A (en) * 1989-10-19 1993-03-23 Texas Instruments Incorporated Test circuit for screening parts
US4994736A (en) * 1989-11-06 1991-02-19 Motorola, Inc. Method and structure for extracting lateral PNP transistor basewidth data at wafer probe
US5068707A (en) * 1990-05-02 1991-11-26 Nec Electronics Inc. DRAM memory cell with tapered capacitor electrodes
US5225376A (en) * 1990-05-02 1993-07-06 Nec Electronics, Inc. Polysilicon taper process using spin-on glass
US5214657A (en) * 1990-09-21 1993-05-25 Micron Technology, Inc. Method for fabricating wafer-scale integration wafers and method for utilizing defective wafer-scale integration wafers
JPH0541437A (ja) * 1990-11-28 1993-02-19 Seiko Epson Corp 半導体装置
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Ｉｃデバイスに対するチップ上のバラツキ検知回路
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
US5239270A (en) * 1992-02-24 1993-08-24 National Semiconductor Corporation Wafer level reliability contact test structure and method
US5600578A (en) * 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
WO1995016923A1 (en) * 1993-12-16 1995-06-22 Philips Electronics N.V. Separate iddq-testing of signal path and bias path in an ic
US5731700A (en) * 1994-03-14 1998-03-24 Lsi Logic Corporation Quiescent power supply current test method and apparatus for integrated circuits
US5486772A (en) * 1994-06-30 1996-01-23 Siliconix Incorporation Reliability test method for semiconductor trench devices
US5548224A (en) * 1995-01-20 1996-08-20 Vlsi Technology, Inc Method and apparatus for wafer level prediction of thin oxide reliability
DE19640542A1 (de) * 1995-10-13 1997-04-10 Nordson Corp Verfahren und Vorrichtung zum Verflüssigen von thermoplastischem Material
US5933020A (en) * 1996-10-16 1999-08-03 Vlsi Technology, Inc. Parasitic resistance measuring device
JPH10154732A (ja) * 1996-11-22 1998-06-09 Mitsubishi Electric Corp 半導体素子分離端欠陥評価テスト構造および該テスト構造を用いた評価方法
JP3696352B2 (ja) * 1996-12-17 2005-09-14 三菱電機株式会社 ライフタイム評価用ｔｅｇ
US6066952A (en) 1997-09-25 2000-05-23 International Business Machnies Corporation Method for polysilicon crystalline line width measurement post etch in undoped-poly process
US6271539B1 (en) 1997-10-14 2001-08-07 American Microsystems, Inc. Electrical diagnostic technique for silicon plasma-etch induced damage characterization
US6348806B1 (en) 1999-03-18 2002-02-19 Motorola, Inc. Method and apparatus for measuring gate leakage current in an integrated circuit
US6249138B1 (en) * 1999-11-23 2001-06-19 United Microelectronics Corp. Method for testing leakage current caused self-aligned silicide
DE10132371A1 (de) * 2001-07-02 2003-01-23 Infineon Technologies Ag Verfahren und Vorrichtung zur integrierten Prüfung von Wafern mit Halbleiterbauelementen
US6836134B2 (en) * 2002-06-11 2004-12-28 Delphi Technologies, Inc. Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein
US7019545B2 (en) * 2002-10-17 2006-03-28 United Microelectronics Corp. Method for monitoring quality of an insulation layer
CN100375257C (zh) * 2003-05-23 2008-03-12 上海宏力半导体制造有限公司 用以厘清漏电流发生原因的半导体测试结构
US7381577B2 (en) * 2005-04-19 2008-06-03 International Business Machines Corporation Early detection test for identifying defective semiconductor wafers in a front-end manufacturing line
US8709833B2 (en) 2011-12-22 2014-04-29 International Business Machines Corporation Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory

Also Published As

Publication number Publication date
EP0113087A2 (de) 1984-07-11
JPS6029230B2 (ja) 1985-07-09
US4542340A (en) 1985-09-17
EP0113087B1 (de) 1988-07-27
JPS59124762A (ja) 1984-07-18
EP0113087A3 (en) 1985-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee