DE3382302D1 - Herstellung eines amorphen siliziumblattes. - Google Patents

Herstellung eines amorphen siliziumblattes.

Info

Publication number
DE3382302D1
DE3382302D1 DE8383903575T DE3382302T DE3382302D1 DE 3382302 D1 DE3382302 D1 DE 3382302D1 DE 8383903575 T DE8383903575 T DE 8383903575T DE 3382302 T DE3382302 T DE 3382302T DE 3382302 D1 DE3382302 D1 DE 3382302D1
Authority
DE
Germany
Prior art keywords
production
amorphous silicon
silicon sheet
sheet
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8383903575T
Other languages
English (en)
Inventor
Nobuhisa Kitagawa
Masataka Hirose
Kazuyoshi Isogaya
Yoshinori Room Tanimasa Ashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Application granted granted Critical
Publication of DE3382302D1 publication Critical patent/DE3382302D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
DE8383903575T 1982-11-15 1983-11-15 Herstellung eines amorphen siliziumblattes. Expired - Fee Related DE3382302D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57199060A JPS5989407A (ja) 1982-11-15 1982-11-15 アモルフアスシリコン膜の形成方法
PCT/JP1983/000411 WO1984002035A1 (en) 1982-11-15 1983-11-15 Method of forming amorphous silicon film

Publications (1)

Publication Number Publication Date
DE3382302D1 true DE3382302D1 (de) 1991-07-04

Family

ID=16401434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383903575T Expired - Fee Related DE3382302D1 (de) 1982-11-15 1983-11-15 Herstellung eines amorphen siliziumblattes.

Country Status (5)

Country Link
US (1) US4585671A (de)
EP (1) EP0125318B1 (de)
JP (1) JPS5989407A (de)
DE (1) DE3382302D1 (de)
WO (1) WO1984002035A1 (de)

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JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
JPH0670970B2 (ja) * 1984-10-11 1994-09-07 キヤノン株式会社 堆積膜形成方法
DE3442790A1 (de) * 1984-11-23 1986-06-05 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von duennschichtkondensatoren
JPH0754800B2 (ja) * 1985-03-14 1995-06-07 三井東圧化学株式会社 半導体薄膜の製造方法
DE3610401A1 (de) * 1985-03-28 1987-02-12 Sumitomo Electric Industries Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird
US4695331A (en) * 1985-05-06 1987-09-22 Chronar Corporation Hetero-augmentation of semiconductor materials
US4755483A (en) * 1985-07-30 1988-07-05 Sanyo Electric Co., Ltd. Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor film formed by photo-chemical vapor deposition
DE3684539D1 (de) * 1985-09-06 1992-04-30 Philips Nv Herstellungsverfahren einer halbleitervorrichtung.
US4910044A (en) * 1985-09-30 1990-03-20 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light emitting device and application thereof
JPS62273767A (ja) * 1986-05-21 1987-11-27 Toshiba Corp 固体撮像装置の製造方法
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5614252A (en) * 1988-12-27 1997-03-25 Symetrix Corporation Method of fabricating barium strontium titanate
US5688565A (en) * 1988-12-27 1997-11-18 Symetrix Corporation Misted deposition method of fabricating layered superlattice materials
AU636818B2 (en) * 1988-12-27 1993-05-06 Symetrix Corporation Methods and apparatus for material deposition
US5138520A (en) * 1988-12-27 1992-08-11 Symetrix Corporation Methods and apparatus for material deposition
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
GB2234529B (en) * 1989-07-26 1993-06-02 Stc Plc Epitaxial growth process
FR2663043B1 (fr) * 1990-06-12 1994-01-07 Centre Nal Recherc Scientifique Procede de depot de couches minces de metaux refractaires.
US5083030A (en) * 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
US5129647A (en) * 1990-12-24 1992-07-14 Edward Castellanos Elastic resistance exerciser secured at the waist
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
JP3181357B2 (ja) * 1991-08-19 2001-07-03 株式会社東芝 半導体薄膜の形成方法および半導体装置の製造方法
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
CA2113336C (en) * 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
US5686320A (en) * 1995-01-20 1997-11-11 Goldstar Co., Ltd. Method for forming semiconductor layer of thin film transistor by using temperature difference
DE19882854T1 (de) 1997-12-02 2001-05-17 Gelest Inc Auf Silizium basierende Schichten gebildet aus Jodsilanvorstufe und Verfahren, um selbiges zu erreichen
US6974367B1 (en) 1999-09-02 2005-12-13 Micron Technology, Inc. Chemical mechanical polishing process
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
JP2002294456A (ja) * 2001-03-30 2002-10-09 Oki Electric Ind Co Ltd 膜の形成方法及びその方法を実施するためのｃｖｄ装置
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7092287B2 (en) * 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7772088B2 (en) * 2005-02-28 2010-08-10 Silicon Genesis Corporation Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7166520B1 (en) * 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
US20070029043A1 (en) * 2005-08-08 2007-02-08 Silicon Genesis Corporation Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process
US7427554B2 (en) * 2005-08-12 2008-09-23 Silicon Genesis Corporation Manufacturing strained silicon substrates using a backing material
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7598153B2 (en) * 2006-03-31 2009-10-06 Silicon Genesis Corporation Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
WO2007118121A2 (en) 2006-04-05 2007-10-18 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US20160020011A2 (en) * 2012-09-28 2016-01-21 Seagate Technology Llc Methods of forming magnetic materials and articles formed thereby
CN104241112B (zh) * 2013-06-09 2017-11-03 中芯国际集成电路制造(上海)有限公司 非晶半导体材料的形成方法及金属硅化物的形成方法
US10790139B2 (en) 2014-01-24 2020-09-29 Applied Materials, Inc. Deposition of silicon and oxygen-containing films without an oxidizer

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US3490961A (en) * 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4348428A (en) * 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法

Also Published As

Publication number Publication date
WO1984002035A1 (en) 1984-05-24
JPH0546092B2 (de) 1993-07-13
EP0125318A1 (de) 1984-11-21
JPS5989407A (ja) 1984-05-23
EP0125318B1 (de) 1991-05-29
EP0125318A4 (de) 1987-06-03
US4585671A (en) 1986-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MITSUI CHEMICALS, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee