DE3466898D1 - Manufacture of cadmium mercury telluride - Google Patents
Manufacture of cadmium mercury tellurideInfo
- Publication number
- DE3466898D1 DE3466898D1 DE8484305396T DE3466898T DE3466898D1 DE 3466898 D1 DE3466898 D1 DE 3466898D1 DE 8484305396 T DE8484305396 T DE 8484305396T DE 3466898 T DE3466898 T DE 3466898T DE 3466898 D1 DE3466898 D1 DE 3466898D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- cadmium mercury
- mercury telluride
- telluride
- cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/0248—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/063—Gp II-IV-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/16—Superlattice
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB838324531A GB8324531D0 (en) | 1983-09-13 | 1983-09-13 | Cadmium mercury telluride |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3466898D1 true DE3466898D1 (en) | 1987-11-26 |
Family
ID=10548729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484305396T Expired DE3466898D1 (en) | 1983-09-13 | 1984-08-08 | Manufacture of cadmium mercury telluride |
Country Status (7)
Country | Link |
---|---|
US (1) | US4566918A (de) |
EP (1) | EP0135344B1 (de) |
JP (1) | JPH0650744B2 (de) |
CA (1) | CA1229290A (de) |
DE (1) | DE3466898D1 (de) |
GB (2) | GB8324531D0 (de) |
IL (1) | IL72790A (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8428032D0 (en) * | 1984-11-06 | 1984-12-12 | Secr Defence | Growth of crystalline layers |
GB2177119B (en) * | 1985-06-26 | 1989-04-26 | Plessey Co Plc | Organometallic chemical vapour deposition |
US4743310A (en) * | 1985-08-26 | 1988-05-10 | Ford Aerospace & Communications Corporation | HGCDTE epitaxially grown on crystalline support |
US4846926A (en) * | 1985-08-26 | 1989-07-11 | Ford Aerospace & Communications Corporation | HcCdTe epitaxially grown on crystalline support |
US4735910A (en) * | 1985-09-19 | 1988-04-05 | Matsushita Electric Industrial Co., Ltd. | In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate |
KR900002687B1 (ko) * | 1985-12-16 | 1990-04-23 | 후지쓰가부시끼가이샤 | Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법 |
JPH084072B2 (ja) * | 1986-01-14 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
US4828938A (en) * | 1986-04-11 | 1989-05-09 | Hughes Aircraft Company | Method for depositing materials containing tellurium and product |
US4946543A (en) * | 1986-06-02 | 1990-08-07 | Kalisher Murray H | Method and apparatus for growing films on a substrate |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US4767494A (en) * | 1986-07-04 | 1988-08-30 | Nippon Telegraph & Telephone Corporation | Preparation process of compound semiconductor |
US4719124A (en) * | 1986-07-28 | 1988-01-12 | American Telephone And Telegraph Company At&T Bell Laboratories | Low temperature deposition utilizing organometallic compounds |
US4804638A (en) * | 1986-12-18 | 1989-02-14 | Raytheon Company | Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity |
CA1319587C (en) * | 1986-12-18 | 1993-06-29 | William Hoke | Metalorganic chemical vapor depositing growth of group ii-vi semiconductor materials having improved compositional uniformity |
GB2202236B (en) * | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
GB2203757B (en) * | 1987-04-16 | 1991-05-22 | Philips Electronic Associated | Electronic device manufacture |
EP0305144A3 (de) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Vebindungshalbleiterkristallschicht |
GB2211209A (en) * | 1987-10-16 | 1989-06-28 | Philips Electronic Associated | A method of forming a defect mixed oxide |
US4901670A (en) * | 1988-08-22 | 1990-02-20 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4935383A (en) * | 1988-09-23 | 1990-06-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition |
DE3918094A1 (de) * | 1989-06-02 | 1990-12-06 | Aixtron Gmbh | Verfahren zur herstellung von dotierten halbleiterschichten |
JP2754765B2 (ja) * | 1989-07-19 | 1998-05-20 | 富士通株式会社 | 化合物半導体結晶の製造方法 |
US5123995A (en) * | 1990-10-04 | 1992-06-23 | Aerodyne Research, Inc. | Low-temperature, photo-induced epitaxy |
US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
US5306660A (en) * | 1991-02-19 | 1994-04-26 | Rockwell International Corporation | Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor |
US5202283A (en) * | 1991-02-19 | 1993-04-13 | Rockwell International Corporation | Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species |
IT1257434B (it) * | 1992-12-04 | 1996-01-17 | Cselt Centro Studi Lab Telecom | Generatore di vapori per impianti di deposizione chimica da fase vapore |
JPH08255923A (ja) * | 1995-03-15 | 1996-10-01 | Fujitsu Ltd | Ii−vi族化合物半導体を使用した半導体装置及びその製造方法 |
US5998235A (en) * | 1997-06-26 | 1999-12-07 | Lockheed Martin Corporation | Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials |
GB9921639D0 (en) * | 1999-09-15 | 1999-11-17 | Secr Defence Brit | New organotellurium compound and new method for synthesising organotellurium compounds |
US7041983B2 (en) * | 2001-10-12 | 2006-05-09 | Lockheed Martin Corporation | Planar geometry buried junction infrared detector and focal plane array |
DE60333807D1 (de) * | 2002-06-10 | 2010-09-23 | Ev Products Inc | Strahlungsdetektor |
KR20050040969A (ko) * | 2003-10-29 | 2005-05-04 | 삼성전자주식회사 | 확산 시스템 |
GB0407804D0 (en) | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
WO2006013344A1 (en) * | 2004-08-02 | 2006-02-09 | Qinetiq Limited | Manufacture of cadmium mercury telluride on patterned silicon |
US8371705B2 (en) * | 2008-03-11 | 2013-02-12 | The United States Of America As Represented By The Secretary Of The Army | Mirrors and methods of making same |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
US9589793B2 (en) | 2008-11-06 | 2017-03-07 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Laterally varying II-VI alloys and uses thereof |
FR2946184B1 (fr) | 2009-05-27 | 2011-07-01 | Commissariat Energie Atomique | Enceinte, dispositif et procede de recuit d'un materiau semi-conducteur du type ii-vi |
JP5867856B2 (ja) * | 2011-12-27 | 2016-02-24 | 株式会社フジクラ | 種結晶保持部材、窒化アルミニウム単結晶の製造方法およびその製造装置 |
JP2020511000A (ja) | 2017-02-24 | 2020-04-09 | ファースト・ソーラー・インコーポレーテッド | ドープ光起電力半導体層および製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312571A (en) * | 1961-10-09 | 1967-04-04 | Monsanto Co | Production of epitaxial films |
US3218203A (en) * | 1961-10-09 | 1965-11-16 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
US3619283A (en) * | 1968-09-27 | 1971-11-09 | Ibm | Method for epitaxially growing thin films |
US3725135A (en) * | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
US3664866A (en) * | 1970-04-08 | 1972-05-23 | North American Rockwell | Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds |
US3622405A (en) * | 1970-06-22 | 1971-11-23 | Honeywell Inc | Method for reducing compositional gradients in{11 {11 {11 {11 {11 {11 {11 {11 {11 {11 |
GB2055774B (en) * | 1979-04-09 | 1983-02-02 | Plessey Co Ltd | Methods of producing semiconductor materials |
FR2484469A1 (fr) * | 1980-02-22 | 1981-12-18 | Telecommunications Sa | Procede de preparation de couches homogenes de hg1-xcdxte |
GB2078695B (en) * | 1980-05-27 | 1984-06-20 | Secr Defence | Cadmium mercury telluride deposition |
LU82690A1 (fr) * | 1980-08-05 | 1982-05-10 | Lucien D Laude | Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus |
DE3278553D1 (en) * | 1981-06-24 | 1988-06-30 | Secr Defence Brit | Photo diodes |
US4439267A (en) * | 1982-09-29 | 1984-03-27 | The United States Of America As Represented By The Secretary Of The Army | Vapor-phase method for growing mercury cadmium telluride |
-
1983
- 1983-09-13 GB GB838324531A patent/GB8324531D0/en active Pending
-
1984
- 1984-08-08 EP EP84305396A patent/EP0135344B1/de not_active Expired
- 1984-08-08 DE DE8484305396T patent/DE3466898D1/de not_active Expired
- 1984-08-16 US US06/641,483 patent/US4566918A/en not_active Expired - Lifetime
- 1984-08-28 IL IL72790A patent/IL72790A/xx not_active IP Right Cessation
- 1984-09-10 GB GB08422817A patent/GB2146663B/en not_active Expired
- 1984-09-10 CA CA000462750A patent/CA1229290A/en not_active Expired
- 1984-09-10 JP JP59189463A patent/JPH0650744B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB8422817D0 (en) | 1984-10-17 |
EP0135344A1 (de) | 1985-03-27 |
CA1229290A (en) | 1987-11-17 |
EP0135344B1 (de) | 1987-10-21 |
GB2146663B (en) | 1986-11-26 |
GB2146663A (en) | 1985-04-24 |
JPH0650744B2 (ja) | 1994-06-29 |
GB8324531D0 (en) | 1983-10-12 |
US4566918A (en) | 1986-01-28 |
JPS6077431A (ja) | 1985-05-02 |
IL72790A (en) | 1988-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QINETIQ LTD., LONDON, GB |
|
8339 | Ceased/non-payment of the annual fee |