DE3478836D1 - Electronic matrix arrays and method for making, parallel preprogramming or field programming the same - Google Patents

Electronic matrix arrays and method for making, parallel preprogramming or field programming the same

Info

Publication number
DE3478836D1
DE3478836D1 DE8484300213T DE3478836T DE3478836D1 DE 3478836 D1 DE3478836 D1 DE 3478836D1 DE 8484300213 T DE8484300213 T DE 8484300213T DE 3478836 T DE3478836 T DE 3478836T DE 3478836 D1 DE3478836 D1 DE 3478836D1
Authority
DE
Germany
Prior art keywords
layer
lines
making
selected areas
preprogramming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484300213T
Other languages
English (en)
Inventor
Robert Royce Johnson
Stanford R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3478836D1 publication Critical patent/DE3478836D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/257Multistable switching devices, e.g. memristors based on radiation or particle beam assisted switching, e.g. optically controlled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
DE8484300213T 1983-01-18 1984-01-13 Electronic matrix arrays and method for making, parallel preprogramming or field programming the same Expired DE3478836D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45891983A 1983-01-18 1983-01-18
US06/513,997 US4545111A (en) 1983-01-18 1983-07-14 Method for making, parallel preprogramming or field programming of electronic matrix arrays

Publications (1)

Publication Number Publication Date
DE3478836D1 true DE3478836D1 (en) 1989-08-03

Family

ID=27039156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484300213T Expired DE3478836D1 (en) 1983-01-18 1984-01-13 Electronic matrix arrays and method for making, parallel preprogramming or field programming the same

Country Status (10)

Country Link
US (2) US4545111A (de)
EP (1) EP0117046B1 (de)
KR (1) KR930000719B1 (de)
AT (1) ATE44335T1 (de)
AU (1) AU561855B2 (de)
BR (1) BR8400201A (de)
CA (1) CA1212470A (de)
DE (1) DE3478836D1 (de)
IL (1) IL70716A (de)
IN (1) IN160151B (de)

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Also Published As

Publication number Publication date
IL70716A0 (en) 1984-04-30
AU2240783A (en) 1984-07-19
ATE44335T1 (de) 1989-07-15
EP0117046A3 (en) 1987-01-14
BR8400201A (pt) 1984-08-21
IL70716A (en) 1987-03-31
EP0117046B1 (de) 1989-06-28
US4597162A (en) 1986-07-01
KR840007314A (ko) 1984-12-06
AU561855B2 (en) 1987-05-21
US4545111A (en) 1985-10-08
CA1212470A (en) 1986-10-07
IN160151B (de) 1987-06-27
KR930000719B1 (ko) 1993-01-30
EP0117046A2 (de) 1984-08-29

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