DE3541047C2 - - Google Patents

Info

Publication number
DE3541047C2
DE3541047C2 DE3541047A DE3541047A DE3541047C2 DE 3541047 C2 DE3541047 C2 DE 3541047C2 DE 3541047 A DE3541047 A DE 3541047A DE 3541047 A DE3541047 A DE 3541047A DE 3541047 C2 DE3541047 C2 DE 3541047C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3541047A
Other versions
DE3541047A1 (de
Inventor
Tsutomu Nakamura
Kazuya Ina Nagano Jp Natsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Publication of DE3541047A1 publication Critical patent/DE3541047A1/de
Application granted granted Critical
Publication of DE3541047C2 publication Critical patent/DE3541047C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
DE19853541047 1984-11-21 1985-11-19 Festkoerper-bildsensor Granted DE3541047A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59244637A JPS61136388A (ja) 1984-11-21 1984-11-21 固体撮像装置

Publications (2)

Publication Number Publication Date
DE3541047A1 DE3541047A1 (de) 1986-05-28
DE3541047C2 true DE3541047C2 (de) 1987-02-19

Family

ID=17121714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853541047 Granted DE3541047A1 (de) 1984-11-21 1985-11-19 Festkoerper-bildsensor

Country Status (3)

Country Link
US (1) US4684992A (de)
JP (1) JPS61136388A (de)
DE (1) DE3541047A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6312161A (ja) * 1986-07-03 1988-01-19 Olympus Optical Co Ltd 半導体撮像装置
NL8602091A (nl) * 1986-08-18 1988-03-16 Philips Nv Beeldopneeminrichting uitgevoerd met een vaste-stof beeldopnemer en een elektronische sluiter.
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
JP2850039B2 (ja) * 1990-05-16 1999-01-27 オリンパス光学工業株式会社 光電変換装置
JPH0451785A (ja) * 1990-06-20 1992-02-20 Olympus Optical Co Ltd 固体撮像装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372471A (en) * 1976-12-10 1978-06-27 Hitachi Ltd Mis type semiconductor device
US4333224A (en) * 1978-04-24 1982-06-08 Buchanan Bobby L Method of fabricating polysilicon/silicon junction field effect transistors
JPS5496321A (en) * 1978-12-13 1979-07-30 Hitachi Ltd Driving method for solid state pickup device
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
US4252371A (en) * 1979-05-03 1981-02-24 Lehnen James A Lounge chair
JPS55166965A (en) * 1979-06-13 1980-12-26 Nec Corp Junction type fet
JPS5689174A (en) * 1979-12-21 1981-07-20 Toshiba Corp Solid image pickup device
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
JPS57197966A (en) * 1982-05-14 1982-12-04 Hitachi Ltd Solid-state image pickup device
JPH0744661B2 (ja) * 1982-12-14 1995-05-15 オリンパス光学工業株式会社 固体撮像装置
JPS59108456A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置
JPS59188278A (ja) * 1983-04-08 1984-10-25 Hamamatsu Photonics Kk 半導体撮像装置
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS6058780A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 測光機能を備えた固体撮像装置
JPH0666446B2 (ja) * 1984-03-29 1994-08-24 オリンパス光学工業株式会社 固体撮像素子
JPS614376A (ja) * 1984-06-19 1986-01-10 Olympus Optical Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
US4684992A (en) 1987-08-04
JPS61136388A (ja) 1986-06-24
DE3541047A1 (de) 1986-05-28

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee