DE3583544D1 - Schutz fuer halbleiterkontaktmetall. - Google Patents
Schutz fuer halbleiterkontaktmetall.Info
- Publication number
- DE3583544D1 DE3583544D1 DE8585106582T DE3583544T DE3583544D1 DE 3583544 D1 DE3583544 D1 DE 3583544D1 DE 8585106582 T DE8585106582 T DE 8585106582T DE 3583544 T DE3583544 T DE 3583544T DE 3583544 D1 DE3583544 D1 DE 3583544D1
- Authority
- DE
- Germany
- Prior art keywords
- protection
- contact metal
- semiconductor contact
- semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/623,656 US4640738A (en) | 1984-06-22 | 1984-06-22 | Semiconductor contact protection |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3583544D1 true DE3583544D1 (de) | 1991-08-29 |
Family
ID=24498919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585106582T Expired - Fee Related DE3583544D1 (de) | 1984-06-22 | 1985-05-29 | Schutz fuer halbleiterkontaktmetall. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4640738A (de) |
EP (1) | EP0165513B1 (de) |
JP (1) | JPS618955A (de) |
DE (1) | DE3583544D1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4687541A (en) * | 1986-09-22 | 1987-08-18 | Rockwell International Corporation | Dual deposition single level lift-off process |
JPS63124446A (ja) * | 1986-11-06 | 1988-05-27 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 接続孔形成方法 |
US5238435A (en) * | 1987-06-10 | 1993-08-24 | U.S. Philips Corporation | Liquid crystal display device and method of manufacturing such a display device |
US5055423A (en) * | 1987-12-28 | 1991-10-08 | Texas Instruments Incorporated | Planarized selective tungsten metallization system |
US4902379A (en) * | 1988-02-08 | 1990-02-20 | Eastman Kodak Company | UHV compatible lift-off method for patterning nobel metal silicide |
US4956304A (en) * | 1988-04-07 | 1990-09-11 | Santa Barbara Research Center | Buried junction infrared photodetector process |
FR2630588A1 (fr) * | 1988-04-22 | 1989-10-27 | Philips Nv | Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee |
US4898841A (en) * | 1988-06-16 | 1990-02-06 | Northern Telecom Limited | Method of filling contact holes for semiconductor devices and contact structures made by that method |
US4981816A (en) * | 1988-10-27 | 1991-01-01 | General Electric Company | MO/TI Contact to silicon |
US4978637A (en) * | 1989-05-31 | 1990-12-18 | Sgs-Thomson Microelectronics, Inc. | Local interconnect process for integrated circuits |
JPH03150874A (ja) * | 1989-11-07 | 1991-06-27 | Nec Corp | 半導体装置 |
JPH03156930A (ja) * | 1989-11-15 | 1991-07-04 | Sanyo Electric Co Ltd | 半導体装置 |
US5317192A (en) * | 1992-05-06 | 1994-05-31 | Sgs-Thomson Microelectronics, Inc. | Semiconductor contact via structure having amorphous silicon side walls |
JP3086747B2 (ja) * | 1992-05-07 | 2000-09-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US6130482A (en) * | 1995-09-26 | 2000-10-10 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
US6025256A (en) * | 1997-01-06 | 2000-02-15 | Electro Scientific Industries, Inc. | Laser based method and system for integrated circuit repair or reconfiguration |
KR100770541B1 (ko) * | 2005-12-29 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
TWI339444B (en) | 2007-05-30 | 2011-03-21 | Au Optronics Corp | Conductor structure, pixel structure, and methods of forming the same |
DE102013104953B4 (de) * | 2013-05-14 | 2023-03-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3985597A (en) * | 1975-05-01 | 1976-10-12 | International Business Machines Corporation | Process for forming passivated metal interconnection system with a planar surface |
US4076575A (en) * | 1976-06-30 | 1978-02-28 | International Business Machines Corporation | Integrated fabrication method of forming connectors through insulative layers |
JPS5915174B2 (ja) * | 1976-07-26 | 1984-04-07 | 日本電信電話株式会社 | フオトマスクの製造方法 |
JPS5475275A (en) * | 1977-11-29 | 1979-06-15 | Fujitsu Ltd | Manufacture of semiconductor device |
US4410622A (en) * | 1978-12-29 | 1983-10-18 | International Business Machines Corporation | Forming interconnections for multilevel interconnection metallurgy systems |
US4272561A (en) * | 1979-05-29 | 1981-06-09 | International Business Machines Corporation | Hybrid process for SBD metallurgies |
US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
US4361599A (en) * | 1981-03-23 | 1982-11-30 | National Semiconductor Corporation | Method of forming plasma etched semiconductor contacts |
US4377633A (en) * | 1981-08-24 | 1983-03-22 | International Business Machines Corporation | Methods of simultaneous contact and metal lithography patterning |
US4514751A (en) * | 1982-12-23 | 1985-04-30 | International Business Machines Corporation | Compressively stresses titanium metallurgy for contacting passivated semiconductor devices |
-
1984
- 1984-06-22 US US06/623,656 patent/US4640738A/en not_active Expired - Fee Related
-
1985
- 1985-02-28 JP JP60037731A patent/JPS618955A/ja active Granted
- 1985-05-29 EP EP85106582A patent/EP0165513B1/de not_active Expired - Lifetime
- 1985-05-29 DE DE8585106582T patent/DE3583544D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0165513A2 (de) | 1985-12-27 |
EP0165513A3 (en) | 1987-05-13 |
JPS618955A (ja) | 1986-01-16 |
JPH0312767B2 (de) | 1991-02-21 |
EP0165513B1 (de) | 1991-07-24 |
US4640738A (en) | 1987-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |