DE3585198D1 - Struktur mit kontrolliertem molekuel und verfahren zu deren herstellung. - Google Patents

Struktur mit kontrolliertem molekuel und verfahren zu deren herstellung.

Info

Publication number
DE3585198D1
DE3585198D1 DE8585112928T DE3585198T DE3585198D1 DE 3585198 D1 DE3585198 D1 DE 3585198D1 DE 8585112928 T DE8585112928 T DE 8585112928T DE 3585198 T DE3585198 T DE 3585198T DE 3585198 D1 DE3585198 D1 DE 3585198D1
Authority
DE
Germany
Prior art keywords
production
controlled molecule
molecule
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585112928T
Other languages
English (en)
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3585198D1 publication Critical patent/DE3585198D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/18Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/91Product with molecular orientation
DE8585112928T 1984-10-16 1985-10-11 Struktur mit kontrolliertem molekuel und verfahren zu deren herstellung. Expired - Lifetime DE3585198D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59216649A JPS6194042A (ja) 1984-10-16 1984-10-16 分子構築体およびその製造方法

Publications (1)

Publication Number Publication Date
DE3585198D1 true DE3585198D1 (de) 1992-02-27

Family

ID=16691752

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112928T Expired - Lifetime DE3585198D1 (de) 1984-10-16 1985-10-11 Struktur mit kontrolliertem molekuel und verfahren zu deren herstellung.

Country Status (4)

Country Link
US (1) US4673474A (de)
EP (1) EP0178606B1 (de)
JP (1) JPS6194042A (de)
DE (1) DE3585198D1 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS62293242A (ja) * 1986-06-12 1987-12-19 Matsushita Electric Ind Co Ltd パターン形成方法およびパターン形成材料
JPS6396655A (ja) * 1986-10-14 1988-04-27 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS63237293A (ja) * 1987-03-24 1988-10-03 Matsushita Electric Ind Co Ltd 可変調分子素子
JPH0774894B2 (ja) * 1987-05-25 1995-08-09 コニカ株式会社 鮮鋭性が改良されたハロゲン化銀写真感光材料
US5264731A (en) * 1987-06-25 1993-11-23 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
DE3723540A1 (de) * 1987-07-16 1989-01-26 Basf Ag Verfahren zur modifizierung und adressierung organischer filme im molekularen bereich
US4968524A (en) * 1987-10-16 1990-11-06 Matsushita Electric Industrial Co., Ltd. Process for producing a polyacetylene
EP0584891B1 (de) * 1988-06-28 1997-03-12 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- bindungen enthalten
JP2506973B2 (ja) * 1988-08-05 1996-06-12 松下電器産業株式会社 光記録媒体の製造方法
US5260115A (en) * 1989-02-15 1993-11-09 Matsushita Electric Industrial Co., Ltd. Organic electro-conductive thin films and process for production thereof
JPH07103190B2 (ja) * 1989-02-15 1995-11-08 松下電器産業株式会社 有機導電性薄膜とその製造方法
EP0484746B1 (de) * 1990-10-25 1996-09-18 Matsushita Electric Industrial Co., Ltd. Durch chemische Adsorption laminierter monomolekularer Film und Verfahren zu seiner Herstellung
US5240774A (en) * 1990-10-25 1993-08-31 Matsushita Electric Industrial Co., Ltd. Fluorocarbon-based coating film and method of manufacturing the same
USRE38752E1 (en) * 1990-10-25 2005-07-05 Matsushita Electric Industrial Co., Ltd Method of manufacturing a fluorocarbon-based coating film
JP2500824B2 (ja) * 1990-10-25 1996-05-29 松下電器産業株式会社 フロロカ―ボン系コ―ティング膜及びその製造方法
US5238746A (en) * 1990-11-06 1993-08-24 Matsushita Electric Industrial Co., Ltd. Fluorocarbon-based polymer lamination coating film and method of manufacturing the same
DE69129145T2 (de) 1990-12-25 1998-07-16 Matsushita Electric Ind Co Ltd Transparentes Substrat mit aufgebrachtem monomolekularem Film und Verfahren zu seiner Herstellung
US6503567B2 (en) 1990-12-25 2003-01-07 Matsushita Electric Industrial Co., Ltd. Transparent substrate and method of manufacturing the same
JP2622316B2 (ja) * 1991-06-04 1997-06-18 松下電器産業株式会社 撥水撥油性フィルム及びその製造方法
CA2060294C (en) * 1991-02-06 2000-01-18 Kazufumi Ogawa Chemically absorbed film and method of manufacturing the same
DE69225743T2 (de) * 1991-03-14 1998-09-24 Matsushita Electric Ind Co Ltd Oberflächenbehandeltes Material für Bekleidung
DE69227536T2 (de) * 1991-04-30 1999-04-08 Matsushita Electric Ind Co Ltd Antistatische Folie und Verfahren zur Herstellung
US5652059A (en) * 1991-11-20 1997-07-29 Bar Ilan University Method for attaching microspheres to a substrate
JP3140189B2 (ja) * 1992-07-29 2001-03-05 松下電器産業株式会社 潤滑膜およびその製造方法
EP0582131B1 (de) * 1992-07-29 1997-05-02 Matsushita Electric Industrial Co., Ltd. Gleitfilm und Verfahren zu seiner Herstellung
DE60044972D1 (de) * 1999-07-02 2010-10-28 Harvard College Nanoskopischen draht enthaltende anordnung, logisc
TWI292583B (en) * 2000-08-22 2008-01-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
AU2002229046B2 (en) 2000-12-11 2006-05-18 President And Fellows Of Harvard College Nanosensors
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7910064B2 (en) * 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US7658975B2 (en) * 2003-12-12 2010-02-09 Intel Corporation Sealing porous dielectric materials
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) * 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
TWI463713B (zh) 2006-11-09 2014-12-01 Nanosys Inc 用於奈米導線對準及沈積的方法
EP2095100B1 (de) 2006-11-22 2016-09-21 President and Fellows of Harvard College Verfahren zum Betreiben eines Nanodraht-Feldeffekttransistorsensors
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
JP2009158691A (ja) * 2007-12-26 2009-07-16 Sharp Corp 有機デバイスおよびその製造方法
WO2010138506A1 (en) 2009-05-26 2010-12-02 Nanosys, Inc. Methods and systems for electric field deposition of nanowires and other devices
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
EP2499276A4 (de) * 2009-11-10 2013-10-02 Univ Brigham Young Mehrschichtenzüchtung durch gasphasenablagerung
US10538844B2 (en) 2015-09-11 2020-01-21 Fei Company Nanofabrication using a new class of electron beam induced surface processing techniques

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959569A (en) * 1956-07-05 1960-11-08 Dow Corning Method of preparing organosilicon graft polymers
US3305524A (en) * 1962-11-27 1967-02-21 Gen Electric Polysiloxanes
US3573334A (en) * 1964-04-02 1971-03-30 Union Carbide Corp Olefinic silicone-organic polymer graft copolymers
US4188273A (en) * 1973-11-22 1980-02-12 Sumitomo Chemical Company, Limited Process for preparing novel thin films
JPS6056285B2 (ja) * 1977-04-28 1985-12-09 凸版印刷株式会社 レジスト膜の作成方法
JPS5642229A (en) * 1979-06-25 1981-04-20 University Patents Inc New photooresist composition
JPS58111029A (ja) * 1981-12-24 1983-07-01 Kureha Chem Ind Co Ltd ジアセチレン化合物累積膜の製造方法
JPS58112078A (ja) * 1981-12-26 1983-07-04 Daikin Ind Ltd フルオロアルキルアクリレ−ト類の重合体被膜を基体表面に形成する方法
JPS59148335A (ja) * 1983-02-14 1984-08-25 Nippon Telegr & Teleph Corp <Ntt> 微細パタ−ン形成法
US4597999A (en) * 1984-10-04 1986-07-01 The Hospital For Sick Children Method for coupling a hydrocarbon containing molecular species

Also Published As

Publication number Publication date
EP0178606A2 (de) 1986-04-23
JPS6194042A (ja) 1986-05-12
EP0178606A3 (en) 1987-09-02
US4673474A (en) 1987-06-16
EP0178606B1 (de) 1992-01-15

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Legal Events

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8364 No opposition during term of opposition