DE3587485D1 - Fluessigkristall-anzeige-element und dessen herstellung. - Google Patents
Fluessigkristall-anzeige-element und dessen herstellung.Info
- Publication number
- DE3587485D1 DE3587485D1 DE8585901601T DE3587485T DE3587485D1 DE 3587485 D1 DE3587485 D1 DE 3587485D1 DE 8585901601 T DE8585901601 T DE 8585901601T DE 3587485 T DE3587485 T DE 3587485T DE 3587485 D1 DE3587485 D1 DE 3587485D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- liquid crystal
- crystal display
- display element
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59070440A JPS60213062A (ja) | 1984-04-09 | 1984-04-09 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587485D1 true DE3587485D1 (de) | 1993-09-02 |
DE3587485T2 DE3587485T2 (de) | 1993-12-16 |
Family
ID=13431549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE85901601T Expired - Fee Related DE3587485T2 (de) | 1984-04-09 | 1985-04-08 | Flüssigkristall-anzeige-element und dessen herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4948231A (de) |
EP (1) | EP0179914B1 (de) |
JP (1) | JPS60213062A (de) |
DE (1) | DE3587485T2 (de) |
WO (1) | WO1985004731A1 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4770498A (en) * | 1982-07-12 | 1988-09-13 | Hosiden Electronics Co., Ltd. | Dot-matrix liquid crystal display |
JPH0697317B2 (ja) * | 1984-04-11 | 1994-11-30 | ホシデン株式会社 | 液晶表示器 |
JPS60172131U (ja) * | 1984-04-20 | 1985-11-14 | ホシデン株式会社 | カラ−液晶表示器 |
JPS62105475A (ja) * | 1985-11-01 | 1987-05-15 | Nec Corp | 薄膜トランジスタ及びその製造方法 |
JPS62125329A (ja) * | 1985-11-27 | 1987-06-06 | Hosiden Electronics Co Ltd | 透過形表示装置 |
JP2627071B2 (ja) * | 1988-01-26 | 1997-07-02 | キヤノン株式会社 | 光変調素子 |
US5187551A (en) * | 1988-04-30 | 1993-02-16 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers |
DE68917774T2 (de) * | 1988-04-30 | 1995-03-16 | Sharp Kk | Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige. |
JP2653099B2 (ja) | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
GB2220792B (en) * | 1988-07-13 | 1991-12-18 | Seikosha Kk | Silicon thin film transistor and method for producing the same |
KR920008675Y1 (ko) * | 1989-12-30 | 1992-12-12 | 삼성전자 주식회사 | 평판 디스플레이용 박막 트랜지스터 |
US5047356A (en) * | 1990-02-16 | 1991-09-10 | Hughes Aircraft Company | High speed silicon-on-insulator device and process of fabricating same |
US5140390A (en) * | 1990-02-16 | 1992-08-18 | Hughes Aircraft Company | High speed silicon-on-insulator device |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
JP3226223B2 (ja) * | 1990-07-12 | 2001-11-05 | 株式会社東芝 | 薄膜トランジスタアレイ装置および液晶表示装置 |
US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
US5666175A (en) * | 1990-12-31 | 1997-09-09 | Kopin Corporation | Optical systems for displays |
US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
JP2873632B2 (ja) | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
CA2061796C (en) * | 1991-03-28 | 2002-12-24 | Kalluri R. Sarma | High mobility integrated drivers for active matrix displays |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
FR2682493B1 (fr) * | 1991-10-11 | 1994-02-04 | Thomson Lcd | Dispositif d'amelioration du contraste d'un ecran a cristal liquide et son procede de fabrication. |
US5459595A (en) * | 1992-02-07 | 1995-10-17 | Sharp Kabushiki Kaisha | Active matrix liquid crystal display |
KR100292767B1 (ko) * | 1992-09-25 | 2001-09-17 | 이데이 노부유끼 | 액정표시장치 |
US5707746A (en) * | 1992-09-25 | 1998-01-13 | Sharp Kabushiki Kaisha | Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer |
US5982002A (en) * | 1993-01-27 | 1999-11-09 | Seiko Instruments Inc. | Light valve having a semiconductor film and a fabrication process thereof |
US5446567A (en) * | 1993-03-23 | 1995-08-29 | Honeywell Inc. | Liquid crystal display with first and second aperatures where one aperature has protuberances |
JP3272532B2 (ja) * | 1993-12-27 | 2002-04-08 | 富士通株式会社 | 半導体装置の製造方法 |
US5691782A (en) * | 1994-07-08 | 1997-11-25 | Sanyo Electric Co., Ltd. | Liquid-crystal display with inter-line short-circuit preventive function and process for producing same |
JP2827920B2 (ja) * | 1994-10-13 | 1998-11-25 | 松下電器産業株式会社 | カラー液晶表示パネル |
FR2732781B1 (fr) * | 1995-04-07 | 1997-06-20 | Thomson Lcd | Procede de fabrication de matrice active tft pour ecran de systeme de projection |
JPH0926603A (ja) * | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US6790714B2 (en) * | 1995-07-03 | 2004-09-14 | Sanyo Electric Co., Ltd. | Semiconductor device, display device and method of fabricating the same |
US5771110A (en) * | 1995-07-03 | 1998-06-23 | Sanyo Electric Co., Ltd. | Thin film transistor device, display device and method of fabricating the same |
KR0172881B1 (ko) * | 1995-07-12 | 1999-03-20 | 구자홍 | 액정표시장치의 구조 및 구동방법 |
JP3143591B2 (ja) * | 1995-09-14 | 2001-03-07 | キヤノン株式会社 | 表示装置 |
KR100186548B1 (ko) * | 1996-01-15 | 1999-05-01 | 구자홍 | 액정표시장치의 구조 |
JP3433779B2 (ja) * | 1996-06-19 | 2003-08-04 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
JP3708637B2 (ja) * | 1996-07-15 | 2005-10-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2870500B2 (ja) * | 1996-08-26 | 1999-03-17 | 日本電気株式会社 | 反射型液晶表示装置 |
JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3716580B2 (ja) | 1997-02-27 | 2005-11-16 | セイコーエプソン株式会社 | 液晶装置及びその製造方法、並びに投写型表示装置 |
KR100252436B1 (ko) * | 1997-04-23 | 2000-05-01 | 구본준 | 액정표시장치및그제조방법 |
JP3838393B2 (ja) * | 1997-09-02 | 2006-10-25 | 株式会社半導体エネルギー研究所 | イメージセンサを内蔵した表示装置 |
JP4271268B2 (ja) | 1997-09-20 | 2009-06-03 | 株式会社半導体エネルギー研究所 | イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 |
GB9726511D0 (en) | 1997-12-13 | 1998-02-11 | Philips Electronics Nv | Thin film transistors and electronic devices comprising such |
JP4312851B2 (ja) | 1998-04-27 | 2009-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3141860B2 (ja) * | 1998-10-28 | 2001-03-07 | ソニー株式会社 | 液晶表示装置の製造方法 |
KR100590744B1 (ko) * | 1998-10-30 | 2006-10-13 | 삼성전자주식회사 | 컬러 필터 기판 및 그 제조 방법, 상기 컬러 필터 기판을 포함하는 액정 표시 장치 |
JP3889533B2 (ja) * | 1999-09-22 | 2007-03-07 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
JP3524029B2 (ja) * | 2000-01-04 | 2004-04-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | トップゲート型tft構造を形成する方法 |
JP3701832B2 (ja) * | 2000-02-04 | 2005-10-05 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 薄膜トランジスタ、液晶表示パネル、および薄膜トランジスタの製造方法 |
KR100703467B1 (ko) * | 2005-01-07 | 2007-04-03 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
JP2014149429A (ja) * | 2013-02-01 | 2014-08-21 | Japan Display Inc | 液晶表示装置および液晶表示装置の製造方法 |
TWI518756B (zh) | 2013-08-16 | 2016-01-21 | 財團法人工業技術研究院 | 圖案化的導電薄膜及其製造方法與應用 |
KR20200110573A (ko) * | 2019-03-15 | 2020-09-24 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3405331A (en) * | 1966-06-29 | 1968-10-08 | Navy Usa | Insulated gate field effect transistor using lead salt |
US3660732A (en) * | 1971-02-08 | 1972-05-02 | Signetics Corp | Semiconductor structure with dielectric and air isolation and method |
US4006968A (en) * | 1975-05-02 | 1977-02-08 | Hughes Aircraft Company | Liquid crystal dot color display |
US4169746A (en) * | 1977-04-28 | 1979-10-02 | Rca Corp. | Method for making silicon on sapphire transistor utilizing predeposition of leads |
JPS5534416A (en) * | 1978-09-01 | 1980-03-11 | Hitachi Ltd | Method of manufacturing semiconductor device |
JPS5627114A (en) * | 1979-08-10 | 1981-03-16 | Canon Inc | Liquid crystal display cell |
JPS5625714A (en) * | 1979-08-09 | 1981-03-12 | Canon Inc | Color liquid crystal display cell |
JPS5630169A (en) * | 1979-08-21 | 1981-03-26 | Canon Kk | Color display cell |
JPS5665176A (en) * | 1979-10-31 | 1981-06-02 | Canon Kk | Display device |
JPS56107287A (en) * | 1980-01-31 | 1981-08-26 | Tokyo Shibaura Electric Co | Image display unit |
JPS5750384A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Semiconductor storage circuit device |
JPS57100721A (en) * | 1980-12-15 | 1982-06-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS58115862A (ja) * | 1981-12-28 | 1983-07-09 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPS58159520A (ja) * | 1982-03-18 | 1983-09-21 | Seiko Epson Corp | 液晶表示パネル |
JPS58159516A (ja) * | 1982-03-18 | 1983-09-21 | Seiko Epson Corp | 液晶表示パネル |
JPS58168278A (ja) * | 1982-03-30 | 1983-10-04 | Toshiba Corp | 薄膜トランジスタの製造方法 |
FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
JPS58222546A (ja) * | 1982-04-13 | 1983-12-24 | Citizen Watch Co Ltd | 半導体装置 |
JPS58206163A (ja) * | 1982-05-27 | 1983-12-01 | Toshiba Corp | 薄膜半導体装置の製造方法 |
JPS5910988A (ja) * | 1982-07-12 | 1984-01-20 | ホシデン株式会社 | カラ−液晶表示器 |
JPS5961818A (ja) * | 1982-10-01 | 1984-04-09 | Seiko Epson Corp | 液晶表示装置 |
JPS6053082A (ja) * | 1983-09-02 | 1985-03-26 | Seiko Epson Corp | 薄膜トランジスタ |
-
1984
- 1984-04-09 JP JP59070440A patent/JPS60213062A/ja active Pending
-
1985
- 1985-04-08 WO PCT/JP1985/000178 patent/WO1985004731A1/ja active IP Right Grant
- 1985-04-08 DE DE85901601T patent/DE3587485T2/de not_active Expired - Fee Related
- 1985-04-08 EP EP85901601A patent/EP0179914B1/de not_active Expired - Lifetime
-
1989
- 1989-01-18 US US07/300,688 patent/US4948231A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS60213062A (ja) | 1985-10-25 |
WO1985004731A1 (en) | 1985-10-24 |
EP0179914B1 (de) | 1993-07-28 |
EP0179914A1 (de) | 1986-05-07 |
EP0179914A4 (de) | 1988-08-29 |
US4948231A (en) | 1990-08-14 |
DE3587485T2 (de) | 1993-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HOSIDEN AND PHILIPS DISPLAY CORP., KOBE, HYOGO, JP |
|
8339 | Ceased/non-payment of the annual fee |