DE3587780T2 - Elektronisches Bauelement und Verfahren zur Herstellung. - Google Patents

Elektronisches Bauelement und Verfahren zur Herstellung.

Info

Publication number
DE3587780T2
DE3587780T2 DE3587780T DE3587780T DE3587780T2 DE 3587780 T2 DE3587780 T2 DE 3587780T2 DE 3587780 T DE3587780 T DE 3587780T DE 3587780 T DE3587780 T DE 3587780T DE 3587780 T2 DE3587780 T2 DE 3587780T2
Authority
DE
Germany
Prior art keywords
manufacturing
electronic component
electronic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3587780T
Other languages
English (en)
Other versions
DE3587780D1 (de
Inventor
Akira Mase
Toshimitsu Konuma
Mitsunori Sakama
Takashi Inushima
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE3587780D1 publication Critical patent/DE3587780D1/de
Application granted granted Critical
Publication of DE3587780T2 publication Critical patent/DE3587780T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
DE3587780T 1984-12-26 1985-12-30 Elektronisches Bauelement und Verfahren zur Herstellung. Expired - Fee Related DE3587780T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59277412A JPH0616506B2 (ja) 1984-12-26 1984-12-26 積層体の側周辺に選択的に被膜を形成する方法

Publications (2)

Publication Number Publication Date
DE3587780D1 DE3587780D1 (de) 1994-04-21
DE3587780T2 true DE3587780T2 (de) 1994-06-23

Family

ID=17583184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3587780T Expired - Fee Related DE3587780T2 (de) 1984-12-26 1985-12-30 Elektronisches Bauelement und Verfahren zur Herstellung.

Country Status (6)

Country Link
US (3) US4828967A (de)
EP (1) EP0187535B1 (de)
JP (1) JPH0616506B2 (de)
KR (1) KR900007300B1 (de)
CN (2) CN1005944B (de)
DE (1) DE3587780T2 (de)

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JPS62112128A (ja) * 1985-11-11 1987-05-23 Semiconductor Energy Lab Co Ltd 液晶装置
US4918504A (en) * 1987-07-31 1990-04-17 Nippon Telegraph And Telephone Corporation Active matrix cell
JPH0191881A (ja) * 1987-10-02 1989-04-11 Sankyo Kk 弾球遊技機における入賞球装置
US5219712A (en) * 1987-11-28 1993-06-15 Thorn Emi Plc Method of forming a solid article
US4948706A (en) * 1987-12-30 1990-08-14 Hoya Corporation Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
US4916275A (en) * 1988-04-13 1990-04-10 Square D Company Tactile membrane switch assembly
US5344745A (en) * 1988-10-16 1994-09-06 Yamanochi Kazuhiko Method for the manufacture of surface acoustic wave transducer
JP3077182B2 (ja) * 1990-09-26 2000-08-14 日本電気株式会社 印刷配線板の製造方法
WO1993007629A1 (en) * 1991-10-04 1993-04-15 Motorola, Inc. Integrated deposited vertical resistor in a sequential multilayer substrate
GB9203595D0 (en) * 1992-02-20 1992-04-08 Philips Electronics Uk Ltd Methods of fabricating thin film structures and display devices produced thereby
US5300403A (en) * 1992-06-18 1994-04-05 International Business Machines Corporation Line width control in a radiation sensitive polyimide
JP3051627B2 (ja) * 1993-02-03 2000-06-12 シャープ株式会社 表示装置およびその製造方法
JPH06313899A (ja) * 1993-04-30 1994-11-08 Sharp Corp 液晶表示装置
US5734452A (en) * 1994-09-26 1998-03-31 Sharp Kabushiki Kaisha Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer
FR2737927B1 (fr) * 1995-08-17 1997-09-12 Commissariat Energie Atomique Procede et dispositif de formation de trous dans une couche de materiau photosensible, en particulier pour la fabrication de sources d'electrons
US5935763A (en) * 1996-06-11 1999-08-10 International Business Machines Corporation Self-aligned pattern over a reflective layer
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
WO2001080287A2 (en) 2000-04-18 2001-10-25 E Ink Corporation Process for fabricating thin film transistors
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
US7079377B2 (en) * 2002-09-30 2006-07-18 Joachim Hossick Schott Capacitor and method for producing a capacitor
US7361027B2 (en) * 2002-12-25 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Contact structure, display device and electronic device
US7256982B2 (en) * 2003-05-30 2007-08-14 Philip Michael Lessner Electrolytic capacitor
CN101765908A (zh) * 2007-08-01 2010-06-30 夏普株式会社 半导体装置的制造方法、半导体装置以及曝光装置
EP2153722A1 (de) 2008-08-05 2010-02-17 Lanxess Deutschland GmbH Antifungische Flüssigformulierungen enthaltend 3-Iodpropargylbutylcarbamat (IPBC) und N-octylisothiazolinon (NOIT)
JP2012196651A (ja) * 2011-03-23 2012-10-18 Panasonic Corp 静電霧化装置及びその製造方法

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US2955351A (en) * 1954-12-28 1960-10-11 Plast O Fab Circuits Inc Method of making a printed circuit
US3142783A (en) * 1959-12-22 1964-07-28 Hughes Aircraft Co Electrical circuit system
US3290756A (en) * 1962-08-15 1966-12-13 Hughes Aircraft Co Method of assembling and interconnecting electrical components
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3405227A (en) * 1966-09-16 1968-10-08 Control Data Corp Multilayer universal printed circuit board
US3740280A (en) * 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
GB1336254A (en) * 1972-03-17 1973-11-07 Acheson Ind Inc Devices
US3818279A (en) * 1973-02-08 1974-06-18 Chromerics Inc Electrical interconnection and contacting system
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
US4019043A (en) * 1975-05-05 1977-04-19 General Electric Company Photoflash lamp array having shielded switching circuit
EP0019391B1 (de) * 1979-05-12 1982-10-06 Fujitsu Limited Verfahren zur Herstellung einer elektronischen Vorrichtung mit Vielschicht-Verdrahtungsstruktur
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
EP0122371B1 (de) * 1980-05-20 1988-08-24 Kabushiki Kaisha Toshiba Halbleitervorrichtung
JPS5734522A (en) * 1980-08-09 1982-02-24 Dainippon Printing Co Ltd Production of electrode substrate for liquid crystal display element
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
DE3153769C2 (de) * 1981-04-14 1995-10-26 Gao Ges Automation Org Trägerelement zum Einbau in Ausweiskarten
US4501960A (en) * 1981-06-22 1985-02-26 Motorola, Inc. Micropackage for identification card
JPS5877263A (ja) * 1981-11-02 1983-05-10 Agency Of Ind Science & Technol 光起電力素子
JPS5892226A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 集積回路素子の製造方法
US4656314A (en) * 1982-02-08 1987-04-07 Industrial Science Associates Printed circuit
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS599635A (ja) * 1982-07-07 1984-01-19 Seiko Epson Corp 電気光学装置
US4611261A (en) * 1982-09-21 1986-09-09 Canon Kabushiki Kaisha Electronic equipment
US4535219A (en) * 1982-10-12 1985-08-13 Xerox Corporation Interfacial blister bonding for microinterconnections
US4544836A (en) * 1982-12-22 1985-10-01 American District Telegraph Company Optically-based access control system
JPS60149025A (ja) * 1984-01-13 1985-08-06 Seiko Epson Corp 液晶表示装置
US4562513A (en) * 1984-05-21 1985-12-31 International Business Machines Corporation Process for forming a high density metallurgy system on a substrate and structure thereof
JPS60257171A (ja) * 1984-06-01 1985-12-18 Hitachi Ltd 薄半素子の製造方法およびその素子
US4566186A (en) * 1984-06-29 1986-01-28 Tektronix, Inc. Multilayer interconnect circuitry using photoimageable dielectric
JPS6145224A (ja) * 1984-08-10 1986-03-05 Alps Electric Co Ltd 液晶表示素子の製造方法
US4730903A (en) * 1985-01-23 1988-03-15 Semiconductor Energy Laboratory Co., Ltd. Ferroelectric crystal display panel and manufacturing method thereof
FR2579775B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede
US4621045A (en) * 1985-06-03 1986-11-04 Motorola, Inc. Pillar via process

Also Published As

Publication number Publication date
CN87106448A (zh) 1988-05-11
CN1005946B (zh) 1989-11-29
US4780794A (en) 1988-10-25
JPS61154039A (ja) 1986-07-12
CN1005944B (zh) 1989-11-29
DE3587780D1 (de) 1994-04-21
JPH0616506B2 (ja) 1994-03-02
KR900007300B1 (ko) 1990-10-08
CN85109696A (zh) 1986-07-16
EP0187535B1 (de) 1994-03-16
US4828967A (en) 1989-05-09
EP0187535A3 (en) 1988-07-20
US4820612A (en) 1989-04-11
EP0187535A2 (de) 1986-07-16
KR860005568A (ko) 1986-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee