DE3663312D1 - Positive resist system having high resistance to oxygen reactive ion etching - Google Patents
Positive resist system having high resistance to oxygen reactive ion etchingInfo
- Publication number
- DE3663312D1 DE3663312D1 DE8686114539T DE3663312T DE3663312D1 DE 3663312 D1 DE3663312 D1 DE 3663312D1 DE 8686114539 T DE8686114539 T DE 8686114539T DE 3663312 T DE3663312 T DE 3663312T DE 3663312 D1 DE3663312 D1 DE 3663312D1
- Authority
- DE
- Germany
- Prior art keywords
- high resistance
- reactive ion
- ion etching
- positive resist
- oxygen reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/806,597 US4665006A (en) | 1985-12-09 | 1985-12-09 | Positive resist system having high resistance to oxygen reactive ion etching |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3663312D1 true DE3663312D1 (en) | 1989-06-15 |
Family
ID=25194405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686114539T Expired DE3663312D1 (en) | 1985-12-09 | 1986-10-21 | Positive resist system having high resistance to oxygen reactive ion etching |
Country Status (4)
Country | Link |
---|---|
US (1) | US4665006A (de) |
EP (1) | EP0225454B1 (de) |
JP (1) | JPS62136638A (de) |
DE (1) | DE3663312D1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3750275T3 (de) * | 1986-06-13 | 1998-10-01 | Microsi Inc | Lackzusammensetzung und -anwendung. |
US4891303A (en) * | 1988-05-26 | 1990-01-02 | Texas Instruments Incorporated | Trilayer microlithographic process using a silicon-based resist as the middle layer |
US5114827A (en) * | 1988-06-28 | 1992-05-19 | Microelectronics Center Of N.C. | Photoresists resistant to oxygen plasmas |
US4968582A (en) * | 1988-06-28 | 1990-11-06 | Mcnc And University Of Nc At Charlotte | Photoresists resistant to oxygen plasmas |
JPH02115853A (ja) * | 1988-10-26 | 1990-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
DE69029104T2 (de) | 1989-07-12 | 1997-03-20 | Fuji Photo Film Co Ltd | Polysiloxane und positiv arbeitende Resistmasse |
US5166038A (en) * | 1989-07-27 | 1992-11-24 | International Business Machines Corporation | Etch resistant pattern formation via interfacial silylation process |
US5023164A (en) * | 1989-10-23 | 1991-06-11 | International Business Machines Corporation | Highly sensitive dry developable deep UV photoresist |
US5328807A (en) * | 1990-06-11 | 1994-07-12 | Hitichi, Ltd. | Method of forming a pattern |
EP0464614B1 (de) * | 1990-06-25 | 1999-09-29 | Matsushita Electronics Corporation | Licht- oder strahlungsempfindliche Zusammensetzung |
US5457003A (en) * | 1990-07-06 | 1995-10-10 | Nippon Telegraph And Telephone Corporation | Negative working resist material, method for the production of the same and process of forming resist patterns using the same |
US5250395A (en) * | 1991-07-25 | 1993-10-05 | International Business Machines Corporation | Process for imaging of photoresist including treatment of the photoresist with an organometallic compound |
DE4228790C1 (de) | 1992-08-29 | 1993-11-25 | Du Pont Deutschland | Tonbares strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Mehrfarbenbildern mittels solch eines Gemischs |
US5683540A (en) * | 1995-06-26 | 1997-11-04 | Boeing North American, Inc. | Method and system for enhancing the surface of a material for cleaning, material removal or as preparation for adhesive bonding or etching |
US5972235A (en) * | 1997-02-28 | 1999-10-26 | Candescent Technologies Corporation | Plasma etching using polycarbonate mask and low pressure-high density plasma |
KR100707767B1 (ko) * | 1999-09-28 | 2007-04-17 | 후지필름 가부시키가이샤 | 포지티브 포토레지스트 조성물 |
AU8015701A (en) | 2000-08-29 | 2002-03-13 | Jsr Corp | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern |
AU2002222583B2 (en) | 2000-12-11 | 2006-06-15 | Jsr Corporation | Radiation-sensitive composition changing in refractive index and method of changing refractive index |
RU2281310C2 (ru) | 2001-02-19 | 2006-08-10 | Джей Эс Эр КОРПОРЕЙШН | Чувствительная к облучению композиция, изменяющая показатель преломления |
EP1375597A4 (de) | 2001-03-13 | 2004-05-26 | Jsr Corp | Strahlungsempfindliche zusammensetzung mit veränderlichem brechungsindex sowie deren verwendung |
JP2003043682A (ja) | 2001-08-01 | 2003-02-13 | Jsr Corp | 感放射線性誘電率変化性組成物、誘電率変化法 |
US20070122749A1 (en) * | 2005-11-30 | 2007-05-31 | Fu Peng F | Method of nanopatterning, a resist film for use therein, and an article including the resist film |
DE102013003329A1 (de) | 2013-02-25 | 2014-08-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Silane, Hybridpolymere und Photolack mit Positiv-Resist Verhalten sowie Verfahren zur Herstellung |
JP5728517B2 (ja) * | 2013-04-02 | 2015-06-03 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法 |
WO2023210579A1 (ja) * | 2022-04-26 | 2023-11-02 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3189662A (en) * | 1961-01-23 | 1965-06-15 | Gen Electric | Organopolysiloxane-polycarbonate block copolymers |
US3419634A (en) * | 1966-01-03 | 1968-12-31 | Gen Electric | Organopolysiloxane polycarbonate block copolymers |
US3600288A (en) * | 1969-01-03 | 1971-08-17 | Gen Electric | Curable silicone-polycarbonate copolymer composition |
US3679774A (en) * | 1970-03-02 | 1972-07-25 | Gen Electric | Crystallized organopolysiloxane-polycarbonate block polymers and method for making them |
BE792727A (fr) * | 1971-12-16 | 1973-06-14 | Bayer Ag | Procede pour l'appretage antifriction du fil a |
US3832419A (en) * | 1973-03-23 | 1974-08-27 | Gen Electric | Organopolysiloxane-polycarbonate block copolymers |
US3821325A (en) * | 1973-03-23 | 1974-06-28 | Gen Electric | Organopolysiloxane-polycarbonate block copolymers |
US3861915A (en) * | 1973-03-30 | 1975-01-21 | Eastman Kodak Co | Block copolyesters of polysiloxanes as additives to photoconductive layers |
US3935154A (en) * | 1973-03-30 | 1976-01-27 | Eastman Kodak Company | Block copolyesters of polysiloxanes |
US3961099A (en) * | 1974-09-26 | 1976-06-01 | International Business Machines Corporation | Thermally stable positive polycarbonate electron beam resists |
US4256828A (en) * | 1975-09-02 | 1981-03-17 | Minnesota Mining And Manufacturing Company | Photocopolymerizable compositions based on epoxy and hydroxyl-containing organic materials |
US4423136A (en) * | 1977-08-05 | 1983-12-27 | General Electric Company | Free radical curable resin compositions containing triarylsulfonium salt |
JPS55500687A (de) * | 1978-06-22 | 1980-09-25 | ||
US4245029A (en) * | 1979-08-20 | 1981-01-13 | General Electric Company | Photocurable compositions using triarylsulfonium salts |
US4306953A (en) * | 1979-11-05 | 1981-12-22 | American Can Company | Cationically polymerizable compositions containing sulfonium salt photoinitiators and stable free radicals as odor suppressants and _method of polymerization using same |
US4374077A (en) * | 1980-02-01 | 1983-02-15 | Minnesota Mining And Manufacturing Company | Process for making information carrying discs |
US4394434A (en) * | 1980-12-08 | 1983-07-19 | Minnesota Mining And Manufacturing Company | Plating resist with improved resistance to extraneous plating |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US4507384A (en) * | 1983-04-18 | 1985-03-26 | Nippon Telegraph & Telephone Public Corporation | Pattern forming material and method for forming pattern therewith |
EP0130599B1 (de) * | 1983-06-29 | 1988-08-10 | Fuji Photo Film Co., Ltd. | Photolösungsfähige Zusammensetzung |
US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
DE3601264A1 (de) * | 1985-01-18 | 1986-07-24 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Photosolubilisierbare zusammensetzung |
JPH102104A (ja) * | 1996-06-12 | 1998-01-06 | Masahiro Oide | 住宅用簡易足場取り付け構造 |
-
1985
- 1985-12-09 US US06/806,597 patent/US4665006A/en not_active Expired - Fee Related
-
1986
- 1986-10-21 EP EP86114539A patent/EP0225454B1/de not_active Expired
- 1986-10-21 DE DE8686114539T patent/DE3663312D1/de not_active Expired
- 1986-10-31 JP JP61258678A patent/JPS62136638A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0225454B1 (de) | 1989-05-10 |
JPH0381144B2 (de) | 1991-12-27 |
JPS62136638A (ja) | 1987-06-19 |
EP0225454A3 (en) | 1987-11-25 |
US4665006A (en) | 1987-05-12 |
EP0225454A2 (de) | 1987-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |