US4892614A
(en)
*
|
1986-07-07 |
1990-01-09 |
Texas Instruments Incorporated |
Integrated circuit isolation process
|
NL8700033A
(nl)
*
|
1987-01-09 |
1988-08-01 |
Philips Nv |
Werkwijze voor het vervaardigen van een halfgeleiderinrichting van het type halfgeleider op isolator.
|
US4871684A
(en)
*
|
1987-10-29 |
1989-10-03 |
International Business Machines Corporation |
Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors
|
US4835115A
(en)
*
|
1987-12-07 |
1989-05-30 |
Texas Instruments Incorporated |
Method for forming oxide-capped trench isolation
|
US5252509A
(en)
*
|
1988-03-15 |
1993-10-12 |
Texas Instruments Incorporated |
Ccd imager responsive to long wavelength radiation
|
US4836885A
(en)
*
|
1988-05-03 |
1989-06-06 |
International Business Machines Corporation |
Planarization process for wide trench isolation
|
JPH02146732A
(ja)
*
|
1988-07-28 |
1990-06-05 |
Fujitsu Ltd |
研摩液及び研摩方法
|
US4879258A
(en)
*
|
1988-08-31 |
1989-11-07 |
Texas Instruments Incorporated |
Integrated circuit planarization by mechanical polishing
|
EP0363100A3
(de)
*
|
1988-10-02 |
1990-05-23 |
Canon Kabushiki Kaisha |
Selektives Polierverfahren
|
US4910155A
(en)
|
1988-10-28 |
1990-03-20 |
International Business Machines Corporation |
Wafer flood polishing
|
US5008208A
(en)
*
|
1988-12-07 |
1991-04-16 |
Honeywell Inc. |
Method of making planarized, self-aligned bipolar integrated circuits
|
US4874463A
(en)
*
|
1988-12-23 |
1989-10-17 |
At&T Bell Laboratories |
Integrated circuits from wafers having improved flatness
|
US5188987A
(en)
*
|
1989-04-10 |
1993-02-23 |
Kabushiki Kaisha Toshiba |
Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step
|
JP2726488B2
(ja)
*
|
1989-04-10 |
1998-03-11 |
株式会社東芝 |
半導体装置の製造方法
|
US5399528A
(en)
*
|
1989-06-01 |
1995-03-21 |
Leibovitz; Jacques |
Multi-layer fabrication in integrated circuit systems
|
JP2577090B2
(ja)
*
|
1989-08-07 |
1997-01-29 |
キヤノン株式会社 |
結晶半導体膜の形成方法
|
US5278092A
(en)
*
|
1989-08-07 |
1994-01-11 |
Canon Kabushiki Kaisha |
Method of forming crystal semiconductor film
|
US5106777A
(en)
*
|
1989-09-27 |
1992-04-21 |
Texas Instruments Incorporated |
Trench isolation process with reduced topography
|
US5173439A
(en)
*
|
1989-10-25 |
1992-12-22 |
International Business Machines Corporation |
Forming wide dielectric-filled isolation trenches in semi-conductors
|
USRE37997E1
(en)
|
1990-01-22 |
2003-02-18 |
Micron Technology, Inc. |
Polishing pad with controlled abrasion rate
|
JPH03222232A
(ja)
*
|
1990-01-25 |
1991-10-01 |
Mitsubishi Electric Corp |
電子放出装置の製造方法
|
JP2597022B2
(ja)
*
|
1990-02-23 |
1997-04-02 |
シャープ株式会社 |
素子分離領域の形成方法
|
US5094972A
(en)
*
|
1990-06-14 |
1992-03-10 |
National Semiconductor Corp. |
Means of planarizing integrated circuits with fully recessed isolation dielectric
|
US6008107A
(en)
*
|
1990-06-14 |
1999-12-28 |
National Semiconductor Corporation |
Method of planarizing integrated circuits with fully recessed isolation dielectric
|
US5064683A
(en)
*
|
1990-10-29 |
1991-11-12 |
Motorola, Inc. |
Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop
|
JPH04165672A
(ja)
*
|
1990-10-29 |
1992-06-11 |
Mitsubishi Electric Corp |
埋込み型光電子集積素子の製造方法
|
US5290396A
(en)
*
|
1991-06-06 |
1994-03-01 |
Lsi Logic Corporation |
Trench planarization techniques
|
US5413966A
(en)
*
|
1990-12-20 |
1995-05-09 |
Lsi Logic Corporation |
Shallow trench etch
|
US5248625A
(en)
*
|
1991-06-06 |
1993-09-28 |
Lsi Logic Corporation |
Techniques for forming isolation structures
|
US5252503A
(en)
*
|
1991-06-06 |
1993-10-12 |
Lsi Logic Corporation |
Techniques for forming isolation structures
|
US5225358A
(en)
*
|
1991-06-06 |
1993-07-06 |
Lsi Logic Corporation |
Method of forming late isolation with polishing
|
US5169491A
(en)
*
|
1991-07-29 |
1992-12-08 |
Micron Technology, Inc. |
Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques
|
US5849632A
(en)
*
|
1991-08-30 |
1998-12-15 |
Micron Technology, Inc. |
Method of passivating semiconductor wafers
|
EP0562127B1
(de)
*
|
1991-10-14 |
2001-04-25 |
Denso Corporation |
Verfahren zur Herstellung einer Halbleiteranordnung
|
US5246884A
(en)
*
|
1991-10-30 |
1993-09-21 |
International Business Machines Corporation |
Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop
|
EP0543449B1
(de)
*
|
1991-11-19 |
1997-03-05 |
Koninklijke Philips Electronics N.V. |
Herstellungsverfahren für eine Halbleitervorrichtung mit durch eine Aluminiumverbindung seitlich voneinander isolierten Aluminiumspuren
|
JPH05226334A
(ja)
*
|
1992-02-13 |
1993-09-03 |
Mitsubishi Electric Corp |
半導体装置,およびその製造方法
|
US5229331A
(en)
*
|
1992-02-14 |
1993-07-20 |
Micron Technology, Inc. |
Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
|
US5245790A
(en)
*
|
1992-02-14 |
1993-09-21 |
Lsi Logic Corporation |
Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
|
US5696028A
(en)
*
|
1992-02-14 |
1997-12-09 |
Micron Technology, Inc. |
Method to form an insulative barrier useful in field emission displays for reducing surface leakage
|
US5653619A
(en)
*
|
1992-03-02 |
1997-08-05 |
Micron Technology, Inc. |
Method to form self-aligned gate structures and focus rings
|
US5259799A
(en)
*
|
1992-03-02 |
1993-11-09 |
Micron Technology, Inc. |
Method to form self-aligned gate structures and focus rings
|
US5186670A
(en)
*
|
1992-03-02 |
1993-02-16 |
Micron Technology, Inc. |
Method to form self-aligned gate structures and focus rings
|
USRE39665E1
(en)
|
1992-03-13 |
2007-05-29 |
Micron Technology, Inc. |
Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
|
US5270241A
(en)
*
|
1992-03-13 |
1993-12-14 |
Micron Technology, Inc. |
Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
|
US5162248A
(en)
*
|
1992-03-13 |
1992-11-10 |
Micron Technology, Inc. |
Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
|
JP3060714B2
(ja)
*
|
1992-04-15 |
2000-07-10 |
日本電気株式会社 |
半導体集積回路の製造方法
|
US5422289A
(en)
*
|
1992-04-27 |
1995-06-06 |
National Semiconductor Corporation |
Method of manufacturing a fully planarized MOSFET and resulting structure
|
US5302551A
(en)
*
|
1992-05-11 |
1994-04-12 |
National Semiconductor Corporation |
Method for planarizing the surface of an integrated circuit over a metal interconnect layer
|
US5445996A
(en)
*
|
1992-05-26 |
1995-08-29 |
Kabushiki Kaisha Toshiba |
Method for planarizing a semiconductor device having a amorphous layer
|
GB2299895B
(en)
*
|
1992-05-26 |
1997-01-08 |
Toshiba Kk |
polishing apparatus for planarizing layer on a semiconductor wafer
|
DE4221432C2
(de)
*
|
1992-06-30 |
1994-06-09 |
Siemens Ag |
Globales Planarisierungsverfahren für integrierte Halbleiterschaltungen oder mikromechanische Bauteile
|
JPH0697132A
(ja)
*
|
1992-07-10 |
1994-04-08 |
Lsi Logic Corp |
半導体ウェハの化学機械的研磨装置、同装置のプラテンへの半導体ウェハ研磨用パッドの取付け方法、および同装置の研磨用複合パッド
|
US5265378A
(en)
*
|
1992-07-10 |
1993-11-30 |
Lsi Logic Corporation |
Detecting the endpoint of chem-mech polishing and resulting semiconductor device
|
US5310455A
(en)
*
|
1992-07-10 |
1994-05-10 |
Lsi Logic Corporation |
Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
|
US5292689A
(en)
*
|
1992-09-04 |
1994-03-08 |
International Business Machines Corporation |
Method for planarizing semiconductor structure using subminimum features
|
US5529936A
(en)
*
|
1992-09-30 |
1996-06-25 |
Lsi Logic Corporation |
Method of etching a lens for a semiconductor solid state image sensor
|
US5519205A
(en)
*
|
1992-09-30 |
1996-05-21 |
Lsi Logic Corporation |
Color electronic camera including photosensor array having binary diffractive lens elements
|
US5340978A
(en)
*
|
1992-09-30 |
1994-08-23 |
Lsi Logic Corporation |
Image-sensing display panels with LCD display panel and photosensitive element array
|
US5234868A
(en)
*
|
1992-10-29 |
1993-08-10 |
International Business Machines Corporation |
Method for determining planarization endpoint during chemical-mechanical polishing
|
JPH07111962B2
(ja)
|
1992-11-27 |
1995-11-29 |
日本電気株式会社 |
選択平坦化ポリッシング方法
|
JP2611615B2
(ja)
*
|
1992-12-15 |
1997-05-21 |
日本電気株式会社 |
半導体装置の製造方法
|
US5264395A
(en)
*
|
1992-12-16 |
1993-11-23 |
International Business Machines Corporation |
Thin SOI layer for fully depleted field effect transistors
|
US5328553A
(en)
*
|
1993-02-02 |
1994-07-12 |
Motorola Inc. |
Method for fabricating a semiconductor device having a planar surface
|
US5626715A
(en)
*
|
1993-02-05 |
1997-05-06 |
Lsi Logic Corporation |
Methods of polishing semiconductor substrates
|
US5389194A
(en)
*
|
1993-02-05 |
1995-02-14 |
Lsi Logic Corporation |
Methods of cleaning semiconductor substrates after polishing
|
US5532191A
(en)
*
|
1993-03-26 |
1996-07-02 |
Kawasaki Steel Corporation |
Method of chemical mechanical polishing planarization of an insulating film using an etching stop
|
US5356513A
(en)
*
|
1993-04-22 |
1994-10-18 |
International Business Machines Corporation |
Polishstop planarization method and structure
|
US5362669A
(en)
*
|
1993-06-24 |
1994-11-08 |
Northern Telecom Limited |
Method of making integrated circuits
|
US5494857A
(en)
*
|
1993-07-28 |
1996-02-27 |
Digital Equipment Corporation |
Chemical mechanical planarization of shallow trenches in semiconductor substrates
|
US5346584A
(en)
*
|
1993-07-28 |
1994-09-13 |
Digital Equipment Corporation |
Planarization process for IC trench isolation using oxidized polysilicon filler
|
US6046079A
(en)
*
|
1993-08-18 |
2000-04-04 |
United Microelectronics Corporation |
Method for prevention of latch-up of CMOS devices
|
US5395801A
(en)
*
|
1993-09-29 |
1995-03-07 |
Micron Semiconductor, Inc. |
Chemical-mechanical polishing processes of planarizing insulating layers
|
JPH07245306A
(ja)
*
|
1994-01-17 |
1995-09-19 |
Sony Corp |
半導体装置における膜平坦化方法
|
EP0664559B1
(de)
*
|
1994-01-17 |
2000-05-31 |
Sony Corporation |
Verfahren zur Oberflächen-Planarisierung von Halbleiter-Anordnungen
|
US5681776A
(en)
*
|
1994-03-15 |
1997-10-28 |
National Semiconductor Corporation |
Planar selective field oxide isolation process using SEG/ELO
|
US5492858A
(en)
*
|
1994-04-20 |
1996-02-20 |
Digital Equipment Corporation |
Shallow trench isolation process for high aspect ratio trenches
|
US5733175A
(en)
*
|
1994-04-25 |
1998-03-31 |
Leach; Michael A. |
Polishing a workpiece using equal velocity at all points overlapping a polisher
|
US5459096A
(en)
*
|
1994-07-05 |
1995-10-17 |
Motorola Inc. |
Process for fabricating a semiconductor device using dual planarization layers
|
US5607341A
(en)
*
|
1994-08-08 |
1997-03-04 |
Leach; Michael A. |
Method and structure for polishing a wafer during manufacture of integrated circuits
|
TW274625B
(de)
*
|
1994-09-30 |
1996-04-21 |
Hitachi Seisakusyo Kk |
|
US5527423A
(en)
*
|
1994-10-06 |
1996-06-18 |
Cabot Corporation |
Chemical mechanical polishing slurry for metal layers
|
DE4438111A1
(de)
*
|
1994-10-26 |
1996-05-02 |
Reinhard Franz |
Elektronisches Tasten-Musikinstrument
|
WO1996029731A1
(fr)
*
|
1995-03-17 |
1996-09-26 |
Hitachi, Ltd. |
Dispositif a semi-conducteur et son procede de fabrication
|
US5972773A
(en)
*
|
1995-03-23 |
1999-10-26 |
Advanced Micro Devices, Inc. |
High quality isolation for high density and high performance integrated circuits
|
US6069081A
(en)
*
|
1995-04-28 |
2000-05-30 |
International Buiness Machines Corporation |
Two-step chemical mechanical polish surface planarization technique
|
JP2790084B2
(ja)
*
|
1995-08-16 |
1998-08-27 |
日本電気株式会社 |
半導体装置の製造方法
|
US5958794A
(en)
*
|
1995-09-22 |
1999-09-28 |
Minnesota Mining And Manufacturing Company |
Method of modifying an exposed surface of a semiconductor wafer
|
US5885900A
(en)
*
|
1995-11-07 |
1999-03-23 |
Lucent Technologies Inc. |
Method of global planarization in fabricating integrated circuit devices
|
WO1997017729A1
(en)
*
|
1995-11-10 |
1997-05-15 |
Advanced Micro Devices, Inc. |
Silicon dioxide spacer for locos or recessed locos
|
US5665202A
(en)
*
|
1995-11-24 |
1997-09-09 |
Motorola, Inc. |
Multi-step planarization process using polishing at two different pad pressures
|
TW309647B
(de)
*
|
1995-12-30 |
1997-07-01 |
Hyundai Electronics Ind |
|
KR0183826B1
(ko)
*
|
1996-03-04 |
1999-05-01 |
김광호 |
연마공정 후처리용 세정 용액 및 그를 이용하는 세정 방법
|
US6022807A
(en)
*
|
1996-04-24 |
2000-02-08 |
Micro Processing Technology, Inc. |
Method for fabricating an integrated circuit
|
US5993686A
(en)
*
|
1996-06-06 |
1999-11-30 |
Cabot Corporation |
Fluoride additive containing chemical mechanical polishing slurry and method for use of same
|
US6039891A
(en)
*
|
1996-09-24 |
2000-03-21 |
Cabot Corporation |
Multi-oxidizer precursor for chemical mechanical polishing
|
US6033596A
(en)
*
|
1996-09-24 |
2000-03-07 |
Cabot Corporation |
Multi-oxidizer slurry for chemical mechanical polishing
|
US5783489A
(en)
*
|
1996-09-24 |
1998-07-21 |
Cabot Corporation |
Multi-oxidizer slurry for chemical mechanical polishing
|
US6132637A
(en)
|
1996-09-27 |
2000-10-17 |
Rodel Holdings, Inc. |
Composition and method for polishing a composite of silica and silicon nitride
|
US5738800A
(en)
*
|
1996-09-27 |
1998-04-14 |
Rodel, Inc. |
Composition and method for polishing a composite of silica and silicon nitride
|
US6043206A
(en)
*
|
1996-10-19 |
2000-03-28 |
Samsung Electronics Co., Ltd. |
Solutions for cleaning integrated circuit substrates
|
US6022256A
(en)
|
1996-11-06 |
2000-02-08 |
Micron Display Technology, Inc. |
Field emission display and method of making same
|
US5958288A
(en)
*
|
1996-11-26 |
1999-09-28 |
Cabot Corporation |
Composition and slurry useful for metal CMP
|
US6068787A
(en)
*
|
1996-11-26 |
2000-05-30 |
Cabot Corporation |
Composition and slurry useful for metal CMP
|
US6126853A
(en)
*
|
1996-12-09 |
2000-10-03 |
Cabot Microelectronics Corporation |
Chemical mechanical polishing slurry useful for copper substrates
|
US6309560B1
(en)
|
1996-12-09 |
2001-10-30 |
Cabot Microelectronics Corporation |
Chemical mechanical polishing slurry useful for copper substrates
|
US5954997A
(en)
*
|
1996-12-09 |
1999-09-21 |
Cabot Corporation |
Chemical mechanical polishing slurry useful for copper substrates
|
US8092707B2
(en)
|
1997-04-30 |
2012-01-10 |
3M Innovative Properties Company |
Compositions and methods for modifying a surface suited for semiconductor fabrication
|
US6194317B1
(en)
|
1998-04-30 |
2001-02-27 |
3M Innovative Properties Company |
Method of planarizing the upper surface of a semiconductor wafer
|
US6114248A
(en)
*
|
1998-01-15 |
2000-09-05 |
International Business Machines Corporation |
Process to reduce localized polish stop erosion
|
US6432828B2
(en)
|
1998-03-18 |
2002-08-13 |
Cabot Microelectronics Corporation |
Chemical mechanical polishing slurry useful for copper substrates
|
US6060400A
(en)
*
|
1998-03-26 |
2000-05-09 |
The Research Foundation Of State University Of New York |
Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
|
DE19829152A1
(de)
*
|
1998-05-05 |
1999-11-18 |
United Microelectronics Corp |
Doppeltes Damaszierverfahren
|
US6146970A
(en)
*
|
1998-05-26 |
2000-11-14 |
Motorola Inc. |
Capped shallow trench isolation and method of formation
|
US6162368A
(en)
*
|
1998-06-13 |
2000-12-19 |
Applied Materials, Inc. |
Technique for chemical mechanical polishing silicon
|
US6063306A
(en)
*
|
1998-06-26 |
2000-05-16 |
Cabot Corporation |
Chemical mechanical polishing slurry useful for copper/tantalum substrate
|
US6217416B1
(en)
|
1998-06-26 |
2001-04-17 |
Cabot Microelectronics Corporation |
Chemical mechanical polishing slurry useful for copper/tantalum substrates
|
US6203407B1
(en)
|
1998-09-03 |
2001-03-20 |
Micron Technology, Inc. |
Method and apparatus for increasing-chemical-polishing selectivity
|
US6863593B1
(en)
*
|
1998-11-02 |
2005-03-08 |
Applied Materials, Inc. |
Chemical mechanical polishing a substrate having a filler layer and a stop layer
|
US6165052A
(en)
*
|
1998-11-16 |
2000-12-26 |
Taiwan Semiconductor Manufacturing Company |
Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation
|
US6391670B1
(en)
|
1999-04-29 |
2002-05-21 |
Micron Technology, Inc. |
Method of forming a self-aligned field extraction grid
|
GB9929613D0
(en)
*
|
1999-12-15 |
2000-02-09 |
Koninkl Philips Electronics Nv |
Manufacture of semiconductor material and devices using that material
|
EP1272580A2
(de)
*
|
2000-04-11 |
2003-01-08 |
Cabot Microelectronics Corporation |
System zur vorzugsweisenden abtrennung von siliziumoxid
|
US6627949B2
(en)
*
|
2000-06-02 |
2003-09-30 |
General Semiconductor, Inc. |
High voltage power MOSFET having low on-resistance
|
US6585572B1
(en)
|
2000-08-22 |
2003-07-01 |
Lam Research Corporation |
Subaperture chemical mechanical polishing system
|
US6652357B1
(en)
|
2000-09-22 |
2003-11-25 |
Lam Research Corporation |
Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
|
US6640155B2
(en)
|
2000-08-22 |
2003-10-28 |
Lam Research Corporation |
Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
|
US7481695B2
(en)
|
2000-08-22 |
2009-01-27 |
Lam Research Corporation |
Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
|
US6541384B1
(en)
|
2000-09-08 |
2003-04-01 |
Applied Materials, Inc. |
Method of initiating cooper CMP process
|
US6471566B1
(en)
|
2000-09-18 |
2002-10-29 |
Lam Research Corporation |
Sacrificial retaining ring CMP system and methods for implementing the same
|
US6443815B1
(en)
|
2000-09-22 |
2002-09-03 |
Lam Research Corporation |
Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
|
CN1255854C
(zh)
*
|
2001-01-16 |
2006-05-10 |
卡伯特微电子公司 |
含有草酸铵的抛光系统及方法
|
US6383065B1
(en)
|
2001-01-22 |
2002-05-07 |
Cabot Microelectronics Corporation |
Catalytic reactive pad for metal CMP
|
US7004819B2
(en)
|
2002-01-18 |
2006-02-28 |
Cabot Microelectronics Corporation |
CMP systems and methods utilizing amine-containing polymers
|
WO2004090937A2
(en)
*
|
2003-04-10 |
2004-10-21 |
Technion Research & Development Foundation Ltd |
Copper cmp slurry composition
|
KR100561004B1
(ko)
*
|
2003-12-30 |
2006-03-16 |
동부아남반도체 주식회사 |
씨모스 이미지 센서 및 그 제조 방법
|
US7255810B2
(en)
*
|
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|
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(en)
*
|
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|
US8038752B2
(en)
*
|
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|
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(ko)
*
|
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|
US7803203B2
(en)
|
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|
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(en)
|
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|
US20080220610A1
(en)
*
|
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|
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(en)
*
|
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|
US8580690B2
(en)
*
|
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|
US8703004B2
(en)
*
|
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2014-04-22 |
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|
US9633863B2
(en)
|
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|
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(zh)
|
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|