DE3684302D1 - Duennschicht-halbleiterstrukturen. - Google Patents

Duennschicht-halbleiterstrukturen.

Info

Publication number
DE3684302D1
DE3684302D1 DE8686906516T DE3684302T DE3684302D1 DE 3684302 D1 DE3684302 D1 DE 3684302D1 DE 8686906516 T DE8686906516 T DE 8686906516T DE 3684302 T DE3684302 T DE 3684302T DE 3684302 D1 DE3684302 D1 DE 3684302D1
Authority
DE
Germany
Prior art keywords
thick layer
semiconductor structures
layer semiconductor
structures
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686906516T
Other languages
English (en)
Inventor
Edmund Ellion
George Wolff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3684302D1 publication Critical patent/DE3684302D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
DE8686906516T 1985-09-09 1986-09-08 Duennschicht-halbleiterstrukturen. Expired - Fee Related DE3684302D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77391085A 1985-09-09 1985-09-09
PCT/US1986/001842 WO1987001514A1 (en) 1985-09-09 1986-09-08 Thin semiconductor stuctures

Publications (1)

Publication Number Publication Date
DE3684302D1 true DE3684302D1 (de) 1992-04-16

Family

ID=25099693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686906516T Expired - Fee Related DE3684302D1 (de) 1985-09-09 1986-09-08 Duennschicht-halbleiterstrukturen.

Country Status (6)

Country Link
US (1) US4692559A (de)
EP (1) EP0236496B1 (de)
JP (1) JPS62502089A (de)
DE (1) DE3684302D1 (de)
IL (1) IL79735A0 (de)
WO (1) WO1987001514A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171167A (ja) * 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
US4854975A (en) * 1986-07-03 1989-08-08 Hughes Aircraft Company Solar cell with integrated interconnect device and process for fabrication thereof
US4849028A (en) * 1986-07-03 1989-07-18 Hughes Aircraft Company Solar cell with integrated interconnect device and process for fabrication thereof
DE4132903C2 (de) * 1991-10-04 1996-03-14 Daimler Benz Aerospace Ag Dünne Solarzelle und Verfahren zu ihrer Herstellung
US5264285A (en) * 1992-06-08 1993-11-23 Hughes Aircraft Company Method of bonding using polycarborane siloxane polymers
FR2894990B1 (fr) 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
US7785989B2 (en) * 2008-12-17 2010-08-31 Emcore Solar Power, Inc. Growth substrates for inverted metamorphic multijunction solar cells
CN102299210A (zh) * 2011-09-14 2011-12-28 中国科学院苏州纳米技术与纳米仿生研究所 倒装薄膜太阳能电池的制作方法
CN104538284A (zh) * 2014-12-30 2015-04-22 西安交通大学 一种在硅片上集成化合物半导体器件的工艺
CN113659019B (zh) * 2021-07-13 2022-10-11 中山德华芯片技术有限公司 一种柔性太阳能电池及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51102484A (de) * 1975-03-06 1976-09-09 Nippon Electric Co
JPS5283187A (en) * 1975-12-30 1977-07-11 Seiko Epson Corp Production of solar cell
JPS533175A (en) * 1976-06-30 1978-01-12 Seiko Epson Corp Watch with solar battery
US4122476A (en) * 1976-11-22 1978-10-24 International Business Machines Corporation Semiconductor heterostructure
JPS548079A (en) * 1977-06-17 1979-01-22 Kiyookura Kk Method of packing food
JPS5491087A (en) * 1977-12-28 1979-07-19 Seiko Instr & Electronics Ltd Manufacture of thin-film solar cell
US4227941A (en) * 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
JPS58101470A (ja) * 1981-12-14 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

Also Published As

Publication number Publication date
EP0236496B1 (de) 1992-03-11
JPS62502089A (ja) 1987-08-13
WO1987001514A1 (en) 1987-03-12
IL79735A0 (en) 1986-11-30
EP0236496A1 (de) 1987-09-16
US4692559A (en) 1987-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee