DE3688696T2 - Leseverstaerker fuer einen nichtfluechtigen speicher. - Google Patents

Leseverstaerker fuer einen nichtfluechtigen speicher.

Info

Publication number
DE3688696T2
DE3688696T2 DE86115696T DE3688696T DE3688696T2 DE 3688696 T2 DE3688696 T2 DE 3688696T2 DE 86115696 T DE86115696 T DE 86115696T DE 3688696 T DE3688696 T DE 3688696T DE 3688696 T2 DE3688696 T2 DE 3688696T2
Authority
DE
Germany
Prior art keywords
volatile memory
reader amplifier
reader
amplifier
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86115696T
Other languages
English (en)
Other versions
DE3688696D1 (de
Inventor
Bruce Lee Morton
Bruce Edward Engles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE3688696D1 publication Critical patent/DE3688696D1/de
Publication of DE3688696T2 publication Critical patent/DE3688696T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
DE86115696T 1985-11-25 1986-11-12 Leseverstaerker fuer einen nichtfluechtigen speicher. Expired - Fee Related DE3688696T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/801,363 US4713797A (en) 1985-11-25 1985-11-25 Current mirror sense amplifier for a non-volatile memory

Publications (2)

Publication Number Publication Date
DE3688696D1 DE3688696D1 (de) 1993-08-19
DE3688696T2 true DE3688696T2 (de) 1993-11-04

Family

ID=25180904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86115696T Expired - Fee Related DE3688696T2 (de) 1985-11-25 1986-11-12 Leseverstaerker fuer einen nichtfluechtigen speicher.

Country Status (6)

Country Link
US (1) US4713797A (de)
EP (1) EP0224125B1 (de)
JP (1) JPH0750557B2 (de)
KR (1) KR930008640B1 (de)
DE (1) DE3688696T2 (de)
HK (1) HK183595A (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
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JPS62167698A (ja) * 1986-01-20 1987-07-24 Fujitsu Ltd 半導体記億装置
JPS62214597A (ja) * 1986-03-17 1987-09-21 Fujitsu Ltd 不揮発性メモリ回路
US4888503A (en) * 1987-10-13 1989-12-19 Intel Corporation Constant current biased common gate differential sense amplifier
US5226013A (en) * 1987-12-01 1993-07-06 Sgs-Thomson Microelectronics S.R.L. Bias and precharging circuit for use in reading EPROM cells
JPH01159897A (ja) * 1987-12-16 1989-06-22 Toshiba Corp センスアンプ
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US4785259A (en) * 1988-02-01 1988-11-15 Motorola, Inc. BIMOS memory sense amplifier system
KR930000963B1 (ko) * 1988-03-09 1993-02-11 가부시기가이샤 도오시바 불휘발성 메모리 회로장치
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置
JPH02103797A (ja) * 1988-10-12 1990-04-16 Hitachi Ltd センスアンプ回路
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
US5148395A (en) * 1989-04-26 1992-09-15 Exar Corporation Dual eeprom cell with current mirror differential read
US5068830A (en) * 1989-05-09 1991-11-26 Advanced Micro Devices High speed static ram sensing system
GB2232798B (en) * 1989-06-12 1994-02-23 Intel Corp Electrically programmable read-only memory
JPH0824000B2 (ja) * 1989-06-12 1996-03-06 株式会社東芝 半導体メモリ装置
US5198997A (en) * 1989-08-11 1993-03-30 Sony Corporation Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
FR2652672B1 (fr) * 1989-10-02 1991-12-20 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore.
JPH03241594A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd 半導体メモリのセンス回路
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
EP0449311B1 (de) * 1990-03-30 1997-10-15 Fujitsu Limited Signalverstärkerschaltung und Halbleiterspeicher diese verwendend
JPH04356799A (ja) * 1990-08-29 1992-12-10 Mitsubishi Electric Corp 半導体記憶装置
JP2673395B2 (ja) * 1990-08-29 1997-11-05 三菱電機株式会社 半導体記憶装置およびそのテスト方法
IT1247650B (it) * 1990-10-31 1994-12-28 Sgs Thomson Microelectronics Memoria flash eprom con aumentata immunita' da soft programming su una linea di riferimento
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
JPH04195900A (ja) * 1990-11-27 1992-07-15 Nec Ic Microcomput Syst Ltd カレントミラー型センスアンプ
JPH0636570A (ja) * 1992-07-16 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置のセンスアンプ回路
US5608676A (en) * 1993-08-31 1997-03-04 Crystal Semiconductor Corporation Current limited current reference for non-volatile memory sensing
EP0655831B1 (de) * 1993-11-30 1999-07-28 STMicroelectronics S.r.l. CMOS-integrierter Hochleistungs-Transkonduktanz-Operationsverstärker
JPH07211081A (ja) * 1994-01-06 1995-08-11 Mitsubishi Electric Corp 半導体記憶装置
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
KR0179097B1 (ko) * 1995-04-07 1999-04-15 김주용 데이타 리드/라이트 방법 및 장치
US5638322A (en) * 1995-07-19 1997-06-10 Cypress Semiconductor Corp. Apparatus and method for improving common mode noise rejection in pseudo-differential sense amplifiers
JPH09265791A (ja) * 1996-03-28 1997-10-07 Nec Corp 半導体記憶装置
US5729493A (en) * 1996-08-23 1998-03-17 Motorola Inc. Memory suitable for operation at low power supply voltages and sense amplifier therefor
US5812456A (en) * 1996-10-01 1998-09-22 Microchip Technology Incorporated Switched ground read for EPROM memory array
GB2321736B (en) * 1997-01-30 2001-04-11 Motorola Ltd Sense amplifier circuit
DE69905699T2 (de) * 1999-06-21 2003-10-16 St Microelectronics Srl Lesevorgang für nichtflüchtige Speicher mit einem mit der Lesespannung variablen Abtaststrom, und Anordnung zur Verwirkligung dieses Vorgangs
US6573772B1 (en) 2000-06-30 2003-06-03 Intel Corporation Method and apparatus for locking self-timed pulsed clock
JP2002251890A (ja) 2001-02-26 2002-09-06 Mitsubishi Electric Corp 信号増幅回路およびそれを備える半導体記憶装置
TW516267B (en) 2002-01-16 2003-01-01 Winbond Electronics Corp Dynamic pre-charging current sensing amplifier
US6711052B2 (en) * 2002-06-28 2004-03-23 Motorola, Inc. Memory having a precharge circuit and method therefor
US6580298B1 (en) 2002-06-28 2003-06-17 Motorola, Inc. Three input sense amplifier and method of operation
US6711068B2 (en) 2002-06-28 2004-03-23 Motorola, Inc. Balanced load memory and method of operation
US6621729B1 (en) 2002-06-28 2003-09-16 Motorola, Inc. Sense amplifier incorporating a symmetric midpoint reference
JP4422558B2 (ja) * 2004-06-10 2010-02-24 富士通マイクロエレクトロニクス株式会社 メモリ装置
US7522463B2 (en) 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7800968B2 (en) * 2007-05-02 2010-09-21 Infineon Technologies Ag Symmetric differential current sense amplifier
US7782678B2 (en) 2007-08-27 2010-08-24 Infineon Technologies Ag Self-timed integrating differential current sense amplifier
US8254178B2 (en) * 2007-08-27 2012-08-28 Infineon Technologies Ag Self-timed integrating differential current
CN102246240A (zh) * 2008-12-09 2011-11-16 拉姆伯斯公司 用于并发和流水线存储器操作的非易失性存储器器件
CN103794252B (zh) * 2012-10-29 2018-01-09 硅存储技术公司 用于读出放大器的低电压电流参考产生器
US9659606B2 (en) * 2014-12-17 2017-05-23 Mediatek Inc. Differential sensing circuit with dynamic voltage reference for single-ended bit line memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936731A (en) * 1974-11-14 1976-02-03 Rca Corporation Amplifier with fast recovery after input signal overswing
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS59186188A (ja) * 1983-04-07 1984-10-22 Fujitsu Ltd センス増幅器
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
JPS6052996A (ja) * 1983-09-02 1985-03-26 Agency Of Ind Science & Technol センスアンプ回路
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置
JPS6070591A (ja) * 1983-09-28 1985-04-22 Nec Corp センスアンプ
JPS6080196A (ja) * 1983-10-07 1985-05-08 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0224125A3 (en) 1989-10-11
HK183595A (en) 1995-12-08
JPH0750557B2 (ja) 1995-05-31
JPS62132299A (ja) 1987-06-15
KR930008640B1 (ko) 1993-09-11
KR870005394A (ko) 1987-06-08
EP0224125A2 (de) 1987-06-03
US4713797A (en) 1987-12-15
DE3688696D1 (de) 1993-08-19
EP0224125B1 (de) 1993-07-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee