DE3689188D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE3689188D1 DE3689188D1 DE86306427T DE3689188T DE3689188D1 DE 3689188 D1 DE3689188 D1 DE 3689188D1 DE 86306427 T DE86306427 T DE 86306427T DE 3689188 T DE3689188 T DE 3689188T DE 3689188 D1 DE3689188 D1 DE 3689188D1
- Authority
- DE
- Germany
- Prior art keywords
- wavelength
- semiconductor laser
- grating
- max
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB858522308A GB8522308D0 (en) | 1985-09-09 | 1985-09-09 | Semiconductor lasers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689188D1 true DE3689188D1 (de) | 1993-11-25 |
DE3689188T2 DE3689188T2 (de) | 1994-03-03 |
Family
ID=10584913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86306427T Expired - Lifetime DE3689188T2 (de) | 1985-09-09 | 1986-08-19 | Halbleiterlaser. |
Country Status (9)
Country | Link |
---|---|
US (1) | US4754459A (de) |
EP (1) | EP0218344B1 (de) |
JP (1) | JPH0744308B2 (de) |
AT (1) | ATE96252T1 (de) |
CA (1) | CA1265604A (de) |
DE (1) | DE3689188T2 (de) |
ES (1) | ES2001941A6 (de) |
GB (1) | GB8522308D0 (de) |
HK (1) | HK135396A (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62257783A (ja) * | 1986-04-30 | 1987-11-10 | Sharp Corp | 半導体レ−ザ素子 |
FR2605801B1 (fr) * | 1986-10-23 | 1989-03-03 | Menigaux Louis | Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu |
GB2203891A (en) * | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
CA2018928C (en) * | 1989-06-14 | 1994-07-26 | Akihiko Oka | Semiconductor laser device |
US5317588A (en) * | 1992-11-05 | 1994-05-31 | Eastman Kodak Company | Ridge waveguide distributed-feedback laser diode with a depressed-index cladding layer |
US5305340A (en) * | 1992-12-16 | 1994-04-19 | International Business Machines Corporation | Waveguide ridge laser device with improved mounting and ridge protection |
US6330265B1 (en) * | 1998-04-21 | 2001-12-11 | Kabushiki Kaisha Toshiba | Optical functional element and transmission device |
ATE361565T1 (de) * | 2002-03-08 | 2007-05-15 | Nanoplus Gmbh Nanosystems And | Ein halbleiterlaserarray mit seitlicher gratingstruktur |
TWI225723B (en) * | 2002-04-12 | 2004-12-21 | Univ Nat Taiwan | Two-pole different width multi-layered semiconductor quantum well laser with carrier redistribution to modulate light-emission wavelength |
US7613401B2 (en) * | 2002-12-03 | 2009-11-03 | Finisar Corporation | Optical FM source based on intra-cavity phase and amplitude modulation in lasers |
US8792531B2 (en) | 2003-02-25 | 2014-07-29 | Finisar Corporation | Optical beam steering for tunable laser applications |
WO2008080171A1 (en) * | 2006-12-22 | 2008-07-03 | Finisar Corporation | Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element |
US7941057B2 (en) * | 2006-12-28 | 2011-05-10 | Finisar Corporation | Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal |
US8131157B2 (en) | 2007-01-22 | 2012-03-06 | Finisar Corporation | Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter |
EP2111678B1 (de) * | 2007-02-02 | 2015-04-08 | Finisar Corporation | Temperaturstabilisierende verpackung für optoelektronische komponenten in einem übertragungsmodul |
US7991291B2 (en) * | 2007-02-08 | 2011-08-02 | Finisar Corporation | WDM PON based on DML |
US8027593B2 (en) | 2007-02-08 | 2011-09-27 | Finisar Corporation | Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers |
JP4312239B2 (ja) * | 2007-02-16 | 2009-08-12 | 富士通株式会社 | 光素子及びその製造方法 |
US8204386B2 (en) | 2007-04-06 | 2012-06-19 | Finisar Corporation | Chirped laser with passive filter element for differential phase shift keying generation |
US7991297B2 (en) | 2007-04-06 | 2011-08-02 | Finisar Corporation | Chirped laser with passive filter element for differential phase shift keying generation |
US8160455B2 (en) * | 2008-01-22 | 2012-04-17 | Finisar Corporation | Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter |
US8260150B2 (en) | 2008-04-25 | 2012-09-04 | Finisar Corporation | Passive wave division multiplexed transmitter having a directly modulated laser array |
US8199785B2 (en) * | 2009-06-30 | 2012-06-12 | Finisar Corporation | Thermal chirp compensation in a chirp managed laser |
DE102009054592A1 (de) * | 2009-12-14 | 2011-06-16 | Dr. Johannes Heidenhain Gmbh | Positionsmesseinrichtung |
-
1985
- 1985-09-09 GB GB858522308A patent/GB8522308D0/en active Pending
- 1985-10-07 US US06/784,949 patent/US4754459A/en not_active Expired - Lifetime
-
1986
- 1986-08-13 CA CA000515884A patent/CA1265604A/en not_active Expired - Lifetime
- 1986-08-19 AT AT86306427T patent/ATE96252T1/de not_active IP Right Cessation
- 1986-08-19 EP EP86306427A patent/EP0218344B1/de not_active Expired - Lifetime
- 1986-08-19 DE DE86306427T patent/DE3689188T2/de not_active Expired - Lifetime
- 1986-09-05 ES ES8601670A patent/ES2001941A6/es not_active Expired
- 1986-09-09 JP JP61213688A patent/JPH0744308B2/ja not_active Expired - Lifetime
-
1996
- 1996-07-25 HK HK135396A patent/HK135396A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0218344A1 (de) | 1987-04-15 |
JPS6261387A (ja) | 1987-03-18 |
US4754459A (en) | 1988-06-28 |
DE3689188T2 (de) | 1994-03-03 |
EP0218344B1 (de) | 1993-10-20 |
ES2001941A6 (es) | 1988-07-01 |
CA1265604A (en) | 1990-02-06 |
HK135396A (en) | 1996-08-02 |
JPH0744308B2 (ja) | 1995-05-15 |
GB8522308D0 (en) | 1985-10-16 |
ATE96252T1 (de) | 1993-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |