DE3689553D1 - Flaches Magnetron-Zerstäubungsgerät und dessen Magnetfeldquelle. - Google Patents

Flaches Magnetron-Zerstäubungsgerät und dessen Magnetfeldquelle.

Info

Publication number
DE3689553D1
DE3689553D1 DE86110626T DE3689553T DE3689553D1 DE 3689553 D1 DE3689553 D1 DE 3689553D1 DE 86110626 T DE86110626 T DE 86110626T DE 3689553 T DE3689553 T DE 3689553T DE 3689553 D1 DE3689553 D1 DE 3689553D1
Authority
DE
Germany
Prior art keywords
magnetic field
magnetron sputtering
field source
sputtering device
flat magnetron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86110626T
Other languages
English (en)
Inventor
Masafumi Suzuki
Hidenobu Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3689553D1 publication Critical patent/DE3689553D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
DE86110626T 1985-08-02 1986-07-31 Flaches Magnetron-Zerstäubungsgerät und dessen Magnetfeldquelle. Expired - Lifetime DE3689553D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171327A JPS6260866A (ja) 1985-08-02 1985-08-02 マグネトロンスパツタ装置

Publications (1)

Publication Number Publication Date
DE3689553D1 true DE3689553D1 (de) 1994-03-03

Family

ID=15921179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86110626T Expired - Lifetime DE3689553D1 (de) 1985-08-02 1986-07-31 Flaches Magnetron-Zerstäubungsgerät und dessen Magnetfeldquelle.

Country Status (5)

Country Link
US (1) US4872964A (de)
EP (1) EP0211412B1 (de)
JP (1) JPS6260866A (de)
KR (1) KR900001661B1 (de)
DE (1) DE3689553D1 (de)

Families Citing this family (57)

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Publication number Priority date Publication date Assignee Title
JPS6247478A (ja) * 1985-08-26 1987-03-02 バリアン・アソシエイツ・インコ−ポレイテツド 磁場の円運動と放射状運動を組み合わせたプレ−ナ・マグネトロン・スパツタリング装置
CA1301239C (en) * 1987-03-16 1992-05-19 Hans Veltrop Method and arrangement for mechanically moving of a magnetic field generating device in a cathode arc discharge evaporating device
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
JP2627651B2 (ja) * 1988-10-17 1997-07-09 アネルバ株式会社 マグネトロンスパッタリング装置
US5409590A (en) * 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
GB8909747D0 (en) * 1989-04-27 1989-06-14 Ionic Coatings Limited Sputtering apparatus
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US4995958A (en) * 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
JP2934711B2 (ja) * 1989-12-07 1999-08-16 カシオ計算機株式会社 スパッタ装置
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5320728A (en) * 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
DE69121446T2 (de) * 1990-03-30 1997-02-20 Applied Materials Inc Zerstäubungssystem
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
CA2093635C (en) * 1990-10-31 2001-07-03 Steven D. Hurwitt Magnetron sputter coating method and apparatus with rotating magnet cathode
JPH04183857A (ja) * 1990-11-16 1992-06-30 Tokuda Seisakusho Ltd プレーナ型マグネトロンスパッタ源における磁石の構造
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
US5194131A (en) * 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
DE4128340C2 (de) * 1991-08-27 1999-09-23 Leybold Ag Zerstäubungskathodenanordnung nach dem Magnetron-Prinzip für die Beschichtung einer kreisringförmigen Beschichtungsfläche
US5188717A (en) * 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
JP2702843B2 (ja) * 1992-03-19 1998-01-26 株式会社芝浦製作所 プレーナ型マグネトロンスパッタリング装置
US5314597A (en) * 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US5248402A (en) * 1992-07-29 1993-09-28 Cvc Products, Inc. Apple-shaped magnetron for sputtering system
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
US5746897A (en) * 1995-07-10 1998-05-05 Cvc Products, Inc. High magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition
WO1997003221A1 (en) * 1995-07-10 1997-01-30 Cvc Products, Inc. Magnetron cathode apparatus and method for sputtering
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
US6039848A (en) * 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
CH689558A5 (de) * 1995-07-11 1999-06-15 Erich Bergmann Bedampfungsanlage und Verdampfereinheit.
US5770025A (en) * 1995-08-03 1998-06-23 Nihon Shinku Gijutsu Kabushiki Kaisha Magnetron sputtering apparatus
US5865970A (en) * 1996-02-23 1999-02-02 Permag Corporation Permanent magnet strucure for use in a sputtering magnetron
US5876574A (en) * 1997-04-23 1999-03-02 Applied Materials, Inc. Magnet design for a sputtering chamber
KR100444011B1 (ko) * 1997-05-06 2004-11-03 삼성전자주식회사 마그네틱을이용한실리사이드제조방법
US5795451A (en) * 1997-06-12 1998-08-18 Read-Rite Corporation Sputtering apparatus with a rotating magnet array
JPH11241158A (ja) * 1998-02-27 1999-09-07 Applied Materials Inc 電子線を用いた真空蒸着装置
US5980707A (en) * 1998-12-18 1999-11-09 Sierra Applied Sciences, Inc. Apparatus and method for a magnetron cathode with moving magnet assembly
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
TW480553B (en) * 1999-07-02 2002-03-21 Applied Materials Inc Magnetron unit and sputtering device
US6440282B1 (en) 1999-07-06 2002-08-27 Applied Materials, Inc. Sputtering reactor and method of using an unbalanced magnetron
WO2001002619A1 (fr) * 1999-07-06 2001-01-11 Applied Materials Inc. Dispositif de pulverisation cathodique et procede de formation de film
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US6402903B1 (en) 2000-02-04 2002-06-11 Steag Hamatech Ag Magnetic array for sputtering system
DE10004824B4 (de) * 2000-02-04 2009-06-25 Oc Oerlikon Balzers Ag Verfahren zur Herstellung von Substraten, Magnetronquelle, Sputterbeschichtungskammer und Verwendung des Verfahrens
US6663754B2 (en) 2001-04-13 2003-12-16 Applied Materials, Inc. Tubular magnet as center pole in unbalanced sputtering magnetron
US7223322B2 (en) * 2002-07-22 2007-05-29 Angstrom Sciences, Inc. Moving magnetic/cathode arrangement and method
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
JP2009007637A (ja) * 2007-06-28 2009-01-15 Fujitsu Ltd マグネトロンスパッタリング装置及び薄膜形成物製造方法
JP5012571B2 (ja) 2008-02-29 2012-08-29 富士通株式会社 マグネトロンスパッタ装置用磁石ユニット
TWI765213B (zh) * 2019-01-23 2022-05-21 大陸商北京北方華創微電子裝備有限公司 內襯冷卻組件、反應腔室及半導體加工設備

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
US4162954A (en) * 1978-08-21 1979-07-31 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
JPS58141384A (ja) * 1982-02-10 1983-08-22 Fujitsu Ltd スパツタリング装置
GB2125440A (en) * 1982-07-13 1984-03-07 Christopher Elphick Tunnel magnetron for cathode sputtering
JPS5918638A (ja) * 1982-07-22 1984-01-31 Toshiba Corp ドライエツチング装置
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
CA1184880A (en) * 1982-11-18 1985-04-02 Kovilvila Ramachandran Sputtering apparatus and method
JPS59173265A (ja) * 1983-03-22 1984-10-01 Fujitsu Ltd スパツタ装置
JPS59215484A (ja) * 1983-05-20 1984-12-05 Victor Co Of Japan Ltd スパツタリングカソ−ド
US4466877A (en) * 1983-10-11 1984-08-21 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
US4552639A (en) * 1984-07-20 1985-11-12 Varian Associates, Inc. Magnetron sputter etching system
JPS6247478A (ja) * 1985-08-26 1987-03-02 バリアン・アソシエイツ・インコ−ポレイテツド 磁場の円運動と放射状運動を組み合わせたプレ−ナ・マグネトロン・スパツタリング装置

Also Published As

Publication number Publication date
US4872964A (en) 1989-10-10
KR900001661B1 (ko) 1990-03-17
EP0211412A3 (en) 1988-09-14
JPH036990B2 (de) 1991-01-31
EP0211412A2 (de) 1987-02-25
JPS6260866A (ja) 1987-03-17
EP0211412B1 (de) 1994-01-19
KR880002239A (ko) 1988-04-29

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Legal Events

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8332 No legal effect for de