DE3766890D1 - Methode zur herstellung eines halbleiterbauelements mit gutem ohmischen kontakt zwischen einer vielzahl von verdrahtungsebenen. - Google Patents
Methode zur herstellung eines halbleiterbauelements mit gutem ohmischen kontakt zwischen einer vielzahl von verdrahtungsebenen.Info
- Publication number
- DE3766890D1 DE3766890D1 DE8787305084T DE3766890T DE3766890D1 DE 3766890 D1 DE3766890 D1 DE 3766890D1 DE 8787305084 T DE8787305084 T DE 8787305084T DE 3766890 T DE3766890 T DE 3766890T DE 3766890 D1 DE3766890 D1 DE 3766890D1
- Authority
- DE
- Germany
- Prior art keywords
- variety
- producing
- ohmic contact
- semiconductor component
- good ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
- H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61137509A JPS62293740A (ja) | 1986-06-13 | 1986-06-13 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3766890D1 true DE3766890D1 (de) | 1991-02-07 |
Family
ID=15200330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787305084T Expired - Fee Related DE3766890D1 (de) | 1986-06-13 | 1987-06-09 | Methode zur herstellung eines halbleiterbauelements mit gutem ohmischen kontakt zwischen einer vielzahl von verdrahtungsebenen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4800179A (de) |
EP (1) | EP0251523B1 (de) |
JP (1) | JPS62293740A (de) |
KR (1) | KR900004268B1 (de) |
DE (1) | DE3766890D1 (de) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4924287A (en) * | 1985-01-20 | 1990-05-08 | Avner Pdahtzur | Personalizable CMOS gate array device and technique |
JPS6344739A (ja) * | 1986-08-12 | 1988-02-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US5329152A (en) * | 1986-11-26 | 1994-07-12 | Quick Technologies Ltd. | Ablative etch resistant coating for laser personalization of integrated circuits |
US4920070A (en) * | 1987-02-19 | 1990-04-24 | Fujitsu Limited | Method for forming wirings for a semiconductor device by filling very narrow via holes |
IL81849A0 (en) * | 1987-03-10 | 1987-10-20 | Zvi Orbach | Integrated circuits and a method for manufacture thereof |
IL82113A (en) * | 1987-04-05 | 1992-08-18 | Zvi Orbach | Fabrication of customized integrated circuits |
WO1990000476A1 (en) * | 1988-07-12 | 1990-01-25 | The Regents Of The University Of California | Planarized interconnect etchback |
US5110759A (en) * | 1988-12-20 | 1992-05-05 | Fujitsu Limited | Conductive plug forming method using laser planarization |
US4976809A (en) * | 1989-12-18 | 1990-12-11 | North American Philips Corp, Signetics Division | Method of forming an aluminum conductor with highly oriented grain structure |
US5232674A (en) * | 1989-12-20 | 1993-08-03 | Fujitsu Limited | Method of improving surface morphology of laser irradiated surface |
JPH03198327A (ja) * | 1989-12-26 | 1991-08-29 | Fujitsu Ltd | 半導体装置の製造方法 |
DE4028776C2 (de) * | 1990-07-03 | 1994-03-10 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement |
EP0465264B1 (de) * | 1990-07-06 | 1998-12-09 | Kazuo Tsubouchi | Verfahren zur Herstellung einer Metallschicht |
US5288664A (en) * | 1990-07-11 | 1994-02-22 | Fujitsu Ltd. | Method of forming wiring of semiconductor device |
US5066611A (en) * | 1990-08-31 | 1991-11-19 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of molybdenum as an anti-reflective coating |
US5032233A (en) * | 1990-09-05 | 1991-07-16 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization |
DE4200809C2 (de) * | 1991-03-20 | 1996-12-12 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement |
JPH04307933A (ja) * | 1991-04-05 | 1992-10-30 | Sony Corp | タングステンプラグの形成方法 |
US5527561A (en) * | 1991-05-28 | 1996-06-18 | Electrotech Limited | Method for filing substrate recesses using elevated temperature and pressure |
KR950010042B1 (ko) * | 1991-06-27 | 1995-09-06 | 삼성전자주식회사 | 반도체 장치의 금속 배선층 형성방법 |
JP3093429B2 (ja) * | 1992-04-28 | 2000-10-03 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH07105441B2 (ja) * | 1992-11-30 | 1995-11-13 | 日本電気株式会社 | 半導体装置の製造方法 |
US5326722A (en) * | 1993-01-15 | 1994-07-05 | United Microelectronics Corporation | Polysilicon contact |
US5621607A (en) * | 1994-10-07 | 1997-04-15 | Maxwell Laboratories, Inc. | High performance double layer capacitors including aluminum carbon composite electrodes |
US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US5918150A (en) * | 1996-10-11 | 1999-06-29 | Sharp Microelectronics Technology, Inc. | Method for a chemical vapor deposition of copper on an ion prepared conductive surface |
GB9714531D0 (en) * | 1997-07-11 | 1997-09-17 | Trikon Equip Ltd | Forming a layer |
US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
DE10046170A1 (de) | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
US7115503B2 (en) * | 2000-10-10 | 2006-10-03 | The Trustees Of Columbia University In The City Of New York | Method and apparatus for processing thin metal layers |
AU2002235144A1 (en) * | 2000-11-27 | 2002-06-03 | The Trustees Of Columbia University In The City Of New York | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
WO2003018882A1 (en) * | 2001-08-27 | 2003-03-06 | The Trustees Of Columbia University In The City Of New York | Improved polycrystalline tft uniformity through microstructure mis-alignment |
WO2003084688A2 (en) * | 2002-04-01 | 2003-10-16 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
WO2004017381A2 (en) * | 2002-08-19 | 2004-02-26 | The Trustees Of Columbia University In The City Of New York | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
US7259081B2 (en) * | 2002-08-19 | 2007-08-21 | Im James S | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions |
WO2004017382A2 (en) * | 2002-08-19 | 2004-02-26 | The Trustees Of Columbia University In The City Of New York | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions |
CN1757093A (zh) * | 2002-08-19 | 2006-04-05 | 纽约市哥伦比亚大学托管会 | 具有多种照射图形的单步半导体处理系统和方法 |
JP4209178B2 (ja) * | 2002-11-26 | 2009-01-14 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
WO2004075263A2 (en) * | 2003-02-19 | 2004-09-02 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
US7164152B2 (en) * | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
WO2005029546A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
WO2005029548A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | System and process for providing multiple beam sequential lateral solidification |
TWI351713B (en) * | 2003-09-16 | 2011-11-01 | Univ Columbia | Method and system for providing a single-scan, con |
US7364952B2 (en) * | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
WO2005029550A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for producing crystalline thin films with a uniform crystalline orientation |
WO2005029547A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
DE102004063832B4 (de) * | 2004-12-29 | 2010-02-11 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung eines gepulsten Laserstrahls hoher Durchschnittsleistung |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
CN101288155A (zh) * | 2005-08-16 | 2008-10-15 | 纽约市哥伦比亚大学事事会 | 高生产率的薄膜结晶过程 |
KR101287314B1 (ko) * | 2005-12-05 | 2013-07-17 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 막 처리 시스템과 방법, 및 박막 |
US20080235944A1 (en) * | 2007-03-31 | 2008-10-02 | John Miller | Method of making a corrugated electrode core terminal interface |
US20080241656A1 (en) * | 2007-03-31 | 2008-10-02 | John Miller | Corrugated electrode core terminal interface apparatus and article of manufacture |
KR20100074193A (ko) | 2007-09-21 | 2010-07-01 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막 트랜지스터에서 사용되는 측면 결정화된 반도체 섬의 집합 |
JP5385289B2 (ja) | 2007-09-25 | 2014-01-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 |
US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
CN103354204A (zh) | 2007-11-21 | 2013-10-16 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009108936A1 (en) * | 2008-02-29 | 2009-09-03 | The Trustees Of Columbia University In The City Of New York | Lithographic method of making uniform crystalline si films |
WO2009111340A2 (en) * | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
WO2009111326A2 (en) * | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash light annealing for thin films |
WO2010056990A1 (en) | 2008-11-14 | 2010-05-20 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US8440581B2 (en) * | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
JP6383291B2 (ja) | 2011-12-26 | 2018-08-29 | ソレクセル、インコーポレイテッド | 太陽電池の光捕獲性を改善するシステム及び方法 |
DK3034289T3 (en) * | 2014-12-17 | 2017-10-23 | Mayr Melnhof Karton Ag | PROCEDURE FOR PREPARING A SUBSTRATE AND SUBSTRATE, SPECIFICALLY FOR A PACKAGING |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258078A (en) * | 1978-06-22 | 1981-03-24 | Bell Telephone Laboratories, Incorporated | Metallization for integrated circuits |
US4214918A (en) * | 1978-10-12 | 1980-07-29 | Stanford University | Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam |
US4305973A (en) * | 1979-07-24 | 1981-12-15 | Hughes Aircraft Company | Laser annealed double conductor structure |
US4388517A (en) * | 1980-09-22 | 1983-06-14 | Texas Instruments Incorporated | Sublimation patterning process |
US4465716A (en) * | 1982-06-02 | 1984-08-14 | Texas Instruments Incorporated | Selective deposition of composite materials |
US4448636A (en) * | 1982-06-02 | 1984-05-15 | Texas Instruments Incorporated | Laser assisted lift-off |
US4673592A (en) * | 1982-06-02 | 1987-06-16 | Texas Instruments Incorporated | Metal planarization process |
JPS592352A (ja) * | 1982-06-28 | 1984-01-07 | Toshiba Corp | 半導体装置の製造方法 |
JPS5958819A (ja) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 薄膜形成方法 |
US4508749A (en) * | 1983-12-27 | 1985-04-02 | International Business Machines Corporation | Patterning of polyimide films with ultraviolet light |
US4657778A (en) * | 1984-08-01 | 1987-04-14 | Moran Peter L | Multilayer systems and their method of production |
US4681795A (en) * | 1985-06-24 | 1987-07-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4674176A (en) * | 1985-06-24 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Planarization of metal films for multilevel interconnects by pulsed laser heating |
-
1986
- 1986-06-13 JP JP61137509A patent/JPS62293740A/ja active Pending
-
1987
- 1987-06-09 EP EP87305084A patent/EP0251523B1/de not_active Expired - Lifetime
- 1987-06-09 DE DE8787305084T patent/DE3766890D1/de not_active Expired - Fee Related
- 1987-06-12 KR KR1019870005948A patent/KR900004268B1/ko not_active IP Right Cessation
- 1987-06-12 US US07/060,923 patent/US4800179A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4800179A (en) | 1989-01-24 |
KR900004268B1 (ko) | 1990-06-18 |
KR880001044A (ko) | 1988-03-31 |
EP0251523A1 (de) | 1988-01-07 |
EP0251523B1 (de) | 1991-01-02 |
JPS62293740A (ja) | 1987-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3766890D1 (de) | Methode zur herstellung eines halbleiterbauelements mit gutem ohmischen kontakt zwischen einer vielzahl von verdrahtungsebenen. | |
DE3777603D1 (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem halbleitersubstrat, das feldoxidzonen an seiner oberflaeche enthaelt. | |
DE3685709T2 (de) | Substratstruktur zur herstellung einer halbleiterverbundanordnung. | |
DE3587255T2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit einer Wanne, z.B. einer komplementären Halbleiteranordnung. | |
DE3777047D1 (de) | Verfahren zur herstellung einer anschlusselektrode einer halbleiteranordnung. | |
DE3587617D1 (de) | Verfahren zur herstellung von bipolaren halbleiteranordnungen. | |
DE68918773T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einer kleine Kontaktlöcher enthaltenden Leiterbahn. | |
DE3583183D1 (de) | Verfahren zur herstellung eines halbleitersubstrates. | |
DE3686315T2 (de) | Verfahren zur herstellung einer halbleiterstruktur. | |
DE3686125T2 (de) | Verfahren zur herstellung einer integrierten schaltung. | |
DE3575149D1 (de) | Verfahren zur herstellung von polyarylensulfiden mit funktionellen endgruppen. | |
DE3686634D1 (de) | Verfahren zur herstellung von leiterplatten fuer das zusammenschalten mit koaxialkabeln und dadurch hergestellte leiterplatten. | |
DE3581919D1 (de) | Verfahren zur herstellung von halbleiterbauelementen mit einer sauerstoff enthaltenden polykristallinen siliciumschicht. | |
DE3586231D1 (de) | Verfahren zur formierung einer passivierungsschicht mit einer selektiven konfiguration auf einem substrat und verfahren zur herstellung von flachgemachten dielektrischen komponenten fuer halbleiterstrukturen. | |
DE3672570D1 (de) | Verfahren zur herstellung einer planaren halbleiteranordnung mit graeben. | |
DE3782071D1 (de) | Verfahren zur herstellung von halbleiterbauelemente mit gehaeusestruktur. | |
DE3870842D1 (de) | Verfahren zur herstellung eines halbleiterbauelementes mit mindestens einem bipolaren heterouebergangstransistor. | |
DE3582143D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung. | |
DE3771428D1 (de) | Herstellungsverfahren eines elektrischen kontaktes auf einem hgcdte p-substrat und seine verwendung zur herstellung einer n/p-diode. | |
DE68910360D1 (de) | Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation. | |
DE3779802D1 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE3580397D1 (de) | Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau. | |
DE3782389T2 (de) | "lift-off" verfahren zur herstellung von leiterbahnen auf einem substrat. | |
DE68923730D1 (de) | Verfahren zur Herstellung einer bipolaren integrierten Schaltung. | |
DE69019200D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Mesa-Struktur. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |