DE3775379D1 - Nichtfluechtige speicherzellenanordnung. - Google Patents

Nichtfluechtige speicherzellenanordnung.

Info

Publication number: DE3775379D1
Authority: DE; Germany
Prior art keywords: memory cell; volatile memory; cell arrangement; arrangement; volatile
Prior art date: 1986-09-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8787905900T

Other languages

English (en)

Inventor

David Poeppelman

Alexander Turi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

NCR International Inc

Original Assignee

NCR Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-22

Filing date

1987-09-04

Publication date

1992-01-30

1987-09-04 Application filed by NCR Corp filed Critical NCR Corp

1992-01-30 Application granted granted Critical

1992-01-30 Publication of DE3775379D1 publication Critical patent/DE3775379D1/de

2007-09-05 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

DE8787905900T 1986-09-22 1987-09-04 Nichtfluechtige speicherzellenanordnung. Expired - Lifetime DE3775379D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/910,053 US4769788A (en)	1986-09-22	1986-09-22	Shared line direct write nonvolatile memory cell array
PCT/US1987/002230 WO1988002174A2 (en)	1986-09-22	1987-09-04	Nonvolatile memory cell array

Publications (1)

Publication Number	Publication Date
DE3775379D1 true DE3775379D1 (de)	1992-01-30

Family

ID=25428241

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787905900T Expired - Lifetime DE3775379D1 (de)	1986-09-22	1987-09-04	Nichtfluechtige speicherzellenanordnung.

Country Status (5)

Country	Link
US (1)	US4769788A (de)
EP (1)	EP0281597B1 (de)
JP (1)	JP2585669B2 (de)
DE (1)	DE3775379D1 (de)
WO (1)	WO1988002174A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4870304A (en) *	1987-12-08	1989-09-26	Cypress Semiconductor Corporation	Fast EPROM programmable logic array cell
DE68913190T2 (de) *	1989-03-31	1994-08-04	Philips Nv	EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht.
US5168464A (en) *	1989-11-29	1992-12-01	Ncr Corporation	Nonvolatile differential memory device and method
US5313605A (en) *	1990-12-20	1994-05-17	Intel Corporation	High bandwith output hierarchical memory store including a cache, fetch buffer and ROM
US8320191B2 (en)	2007-08-30	2012-11-27	Infineon Technologies Ag	Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2809191C3 (de) *	1978-03-03	1981-10-08	Industrie-Werke Karlsruhe Augsburg Ag, 7500 Karlsruhe	Müllfahrzeug mit als Sammelbehälter dienender Drehtrommel
JPS6046554B2 (ja) *	1978-12-14	1985-10-16	株式会社東芝	半導体記憶素子及び記憶回路
US4486769A (en) *	1979-01-24	1984-12-04	Xicor, Inc.	Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
DE2916884C3 (de) *	1979-04-26	1981-12-10	Deutsche Itt Industries Gmbh, 7800 Freiburg	Programmierbare Halbleiterspeicherzelle
JPS5929155B2 (ja) *	1979-11-12	1984-07-18	富士通株式会社	半導体記憶装置
US4387447A (en) *	1980-02-04	1983-06-07	Texas Instruments Incorporated	Column and ground select sequence in electrically programmable memory
DE3136517C2 (de) *	1980-09-26	1985-02-07	Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa	Nichtflüchtige Halbleiter-Speichervorrichtung
JPS6034198B2 (ja) *	1980-11-26	1985-08-07	富士通株式会社	不揮発性メモリ
US4628487A (en) *	1984-08-14	1986-12-09	Texas Instruments Incorporated	Dual slope, feedback controlled, EEPROM programming
US4616245A (en) *	1984-10-29	1986-10-07	Ncr Corporation	Direct-write silicon nitride EEPROM cell
US4683554A (en) *	1985-09-13	1987-07-28	Ncr Corporation	Direct write nonvolatile memory cells
US4698900A (en) *	1986-03-27	1987-10-13	Texas Instruments Incorporated	Method of making a non-volatile memory having dielectric filled trenches

1986
- 1986-09-22 US US06/910,053 patent/US4769788A/en not_active Expired - Lifetime
1987
- 1987-09-04 WO PCT/US1987/002230 patent/WO1988002174A2/en active IP Right Grant
- 1987-09-04 JP JP62505511A patent/JP2585669B2/ja not_active Expired - Lifetime
- 1987-09-04 EP EP87905900A patent/EP0281597B1/de not_active Expired - Lifetime
- 1987-09-04 DE DE8787905900T patent/DE3775379D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US4769788A (en)	1988-09-06
JPH01501023A (ja)	1989-04-06
EP0281597A1 (de)	1988-09-14
WO1988002174A3 (en)	1988-07-28
JP2585669B2 (ja)	1997-02-26
WO1988002174A2 (en)	1988-03-24
EP0281597B1 (de)	1991-12-18

Legal Events

Date	Code	Title	Description
1992-11-12	8327	Change in the person/name/address of the patent owner	Owner name: NCR INTERNATIONAL INC., DAYTON, OHIO, US
1992-11-12	8328	Change in the person/name/address of the agent	Free format text: KAHLER, K., DIPL.-ING., 8948 MINDELHEIM KAECK, J., DIPL.-ING. DIPL.-WIRTSCH.-ING., 8910 LANDSBERG FIENER, J., PAT.-ANWAELTE, 8948 MINDELHEIM
1993-01-21	8364	No opposition during term of opposition
1995-08-03	8327	Change in the person/name/address of the patent owner	Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN
1996-01-11	8327	Change in the person/name/address of the patent owner	Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN
1997-04-17	8327	Change in the person/name/address of the patent owner	Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR
1999-05-27	8327	Change in the person/name/address of the patent owner	Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR
2000-12-21	8328	Change in the person/name/address of the agent	Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN
2008-05-15	8327	Change in the person/name/address of the patent owner	Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US

Publication	Publication Date	Title
DE3885408D1 (de)	1993-12-09	Nichtflüchtige Speicherzelle.
DE3785509D1 (de)	1993-05-27	Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de)	1993-09-09	Nichtfluechtige halbleiterspeicheranordnung.
DE3576013D1 (de)	1990-03-15	Nichtfluechtiger halbleiterspeicher.
DE3577944D1 (de)	1990-06-28	Halbleiterspeicheranordnung.
DE3689004D1 (de)	1993-10-14	Halbleiterspeicherzelle.
DE3582376D1 (de)	1991-05-08	Halbleiterspeicheranordnung.
DE3576236D1 (de)	1990-04-05	Halbleiterspeicheranordnung.
DE3577367D1 (de)	1990-05-31	Halbleiterspeicheranordnung.
DE3878370T2 (de)	1993-06-03	Nichtfluechtige halbleiterspeicheranordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3580993D1 (de)	1991-02-07	Halbleiterspeicheranordnung.
DE3767729D1 (de)	1991-03-07	Assoziativspeicherzelle.
DE3783100T2 (de)	1993-04-22	Festwertspeicheranordnung.
DE3576754D1 (de)	1990-04-26	Halbleiterspeicheranordnung.
DE3686144D1 (de)	1992-08-27	Nichtfluechtiger halbleiterspeicher.
DE3578254D1 (de)	1990-07-19	Halbleiterspeicheranordnung.
DE3580454D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3879766T2 (de)	1993-10-21	Halbleiter Speicherzelle.
DE3583669D1 (de)	1991-09-05	Nichtfluechtige halbleiterspeicheranordnung.
DE3581888D1 (de)	1991-04-04	Halbleiterspeicheranordnung.
DE3577494D1 (de)	1990-06-07	Halbleiterspeicheranordnung.
DE3586493D1 (de)	1992-09-17	Nichtfluechtige halbleiterspeicheranordnung.
DE3778601D1 (de)	1992-06-04	Nichtfluechtige halbleiterspeicheranordnung.
NL192066B (nl)	1996-09-02	Niet-vluchtige halfgeleidergeheugencel.