DE3780676D1 - Verfahren zur modifizierung von oberflaechen und anwendung dieser methode zur herstellung von geschichteten strukturen. - Google Patents

Verfahren zur modifizierung von oberflaechen und anwendung dieser methode zur herstellung von geschichteten strukturen.

Info

Publication number
DE3780676D1
DE3780676D1 DE8787103900T DE3780676T DE3780676D1 DE 3780676 D1 DE3780676 D1 DE 3780676D1 DE 8787103900 T DE8787103900 T DE 8787103900T DE 3780676 T DE3780676 T DE 3780676T DE 3780676 D1 DE3780676 D1 DE 3780676D1
Authority
DE
Germany
Prior art keywords
application
layered structures
modifying surfaces
producing layered
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787103900T
Other languages
English (en)
Other versions
DE3780676T2 (de
Inventor
Carol Ruth Jones
Robin Anne Susko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3780676D1 publication Critical patent/DE3780676D1/de
Publication of DE3780676T2 publication Critical patent/DE3780676T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
DE8787103900T 1986-04-14 1987-03-17 Verfahren zur modifizierung von oberflaechen und anwendung dieser methode zur herstellung von geschichteten strukturen. Expired - Fee Related DE3780676T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/851,856 US4715941A (en) 1986-04-14 1986-04-14 Surface modification of organic materials to improve adhesion

Publications (2)

Publication Number Publication Date
DE3780676D1 true DE3780676D1 (de) 1992-09-03
DE3780676T2 DE3780676T2 (de) 1993-03-11

Family

ID=25311885

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787103900T Expired - Fee Related DE3780676T2 (de) 1986-04-14 1987-03-17 Verfahren zur modifizierung von oberflaechen und anwendung dieser methode zur herstellung von geschichteten strukturen.

Country Status (4)

Country Link
US (1) US4715941A (de)
EP (1) EP0241739B1 (de)
JP (1) JPS62243627A (de)
DE (1) DE3780676T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873118A (en) * 1988-11-18 1989-10-10 Atlantic Richfield Company Oxygen glow treating of ZnO electrode for thin film silicon solar cell
US5019210A (en) * 1989-04-03 1991-05-28 International Business Machines Corporation Method for enhancing the adhesion of polymer surfaces by water vapor plasma treatment
US5385787A (en) * 1993-02-03 1995-01-31 Amp-Akzo Corporation Organosilane adhesion promotion in manufacture of additive printed wiring board
DE4430990C2 (de) * 1994-08-31 2002-10-24 Infineon Technologies Ag Verfahren zur Reinigung der Rückseite eines Chips sowie der Oberfläche von nach außen freiliegenden Teilen der aus dem Chip und einem Träger bestehenden Anordnung
US5650040A (en) * 1995-11-30 1997-07-22 Micron Technology, Inc. Interfacial etch of silica to improve adherence of noble metals
DE19634845C1 (de) * 1996-08-28 1998-02-26 Siemens Ag Verfahren zur Optimierung der Adhäsion zwischen Preßmasse und Passivierungsschicht in einem Kunststoffchipgehäuse
JP3621034B2 (ja) * 2000-10-02 2005-02-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003282698A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法および半導体装置
US7030010B2 (en) * 2002-08-29 2006-04-18 Micron Technology, Inc. Methods for creating electrophoretically insulated vias in semiconductive substrates and resulting structures
JP2005223065A (ja) * 2004-02-04 2005-08-18 Seiko Epson Corp 配線基板の製造方法及び電子デバイスの製造方法
US20070020451A1 (en) 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
US7577396B2 (en) * 2005-09-21 2009-08-18 Oki Data Corporation Printing apparatus
JP5226035B2 (ja) * 2010-06-03 2013-07-03 日本メクトロン株式会社 積層配線基板の製造法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155826A (en) * 1975-04-14 1979-05-22 Nitto Electric Industrial Co., Ltd. Process for surface treating molded articles of fluorine resins
JPS538672A (en) * 1976-07-13 1978-01-26 Nitto Electric Ind Co Method of hydrophilization of formed product of plastic
US4582564A (en) * 1982-01-04 1986-04-15 At&T Technologies, Inc. Method of providing an adherent metal coating on an epoxy surface
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
US4555303A (en) * 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
US4568598A (en) * 1984-10-30 1986-02-04 Minnesota Mining And Manufacturing Company Article with reduced friction polymer sheet support
US4568562A (en) * 1984-11-28 1986-02-04 General Dynamics, Pomona Division Method of electroless plating employing plasma treatment
US4615763A (en) * 1985-01-02 1986-10-07 International Business Machines Corporation Roughening surface of a substrate
US4601778A (en) * 1985-02-25 1986-07-22 Motorola, Inc. Maskless etching of polysilicon
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer

Also Published As

Publication number Publication date
DE3780676T2 (de) 1993-03-11
EP0241739B1 (de) 1992-07-29
JPS62243627A (ja) 1987-10-24
EP0241739A1 (de) 1987-10-21
JPH0377221B2 (de) 1991-12-09
US4715941A (en) 1987-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee