DE3785521D1 - Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v. - Google Patents
Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v.Info
- Publication number
- DE3785521D1 DE3785521D1 DE8787306965T DE3785521T DE3785521D1 DE 3785521 D1 DE3785521 D1 DE 3785521D1 DE 8787306965 T DE8787306965 T DE 8787306965T DE 3785521 T DE3785521 T DE 3785521T DE 3785521 D1 DE3785521 D1 DE 3785521D1
- Authority
- DE
- Germany
- Prior art keywords
- connections
- group
- field effect
- effect transistor
- vertical mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/896,772 US4755867A (en) | 1986-08-15 | 1986-08-15 | Vertical Enhancement-mode Group III-V compound MISFETs |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3785521D1 true DE3785521D1 (de) | 1993-05-27 |
DE3785521T2 DE3785521T2 (de) | 1993-07-29 |
Family
ID=25406804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787306965T Expired - Fee Related DE3785521T2 (de) | 1986-08-15 | 1987-08-06 | Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4755867A (de) |
EP (1) | EP0257875B1 (de) |
JP (1) | JPS6348867A (de) |
DE (1) | DE3785521T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088357B2 (ja) * | 1986-12-01 | 1996-01-29 | 三菱電機株式会社 | 縦型mosトランジスタ |
US4914743A (en) * | 1987-08-27 | 1990-04-03 | The United States Of America As Represented By The Secretary Of The Navy | Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier |
US4961100A (en) * | 1988-06-20 | 1990-10-02 | General Electric Company | Bidirectional field effect semiconductor device and circuit |
US5134448A (en) * | 1990-01-29 | 1992-07-28 | Motorola, Inc. | MOSFET with substrate source contact |
US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
US7901994B2 (en) * | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7084441B2 (en) | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US20060017064A1 (en) * | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7161194B2 (en) * | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
US7626217B2 (en) * | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US7544963B2 (en) * | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US7615774B2 (en) * | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US7592211B2 (en) * | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
JPS55120168A (en) * | 1979-03-08 | 1980-09-16 | Sony Corp | Field effect type semiconductor device |
DE3040873C2 (de) * | 1980-10-30 | 1984-02-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
FR2555816B1 (fr) * | 1983-11-25 | 1986-04-11 | Thomson Csf | Transistor a effet de champ a structure verticale |
FR2555815B1 (fr) * | 1983-11-25 | 1986-08-29 | Thomson Csf | Transistor de puissance a effet de champ, et procede de realisation de ce transistor |
US4568958A (en) * | 1984-01-03 | 1986-02-04 | General Electric Company | Inversion-mode insulated-gate gallium arsenide field-effect transistors |
-
1986
- 1986-08-15 US US06/896,772 patent/US4755867A/en not_active Expired - Lifetime
-
1987
- 1987-08-06 EP EP87306965A patent/EP0257875B1/de not_active Expired - Lifetime
- 1987-08-06 DE DE8787306965T patent/DE3785521T2/de not_active Expired - Fee Related
- 1987-08-12 JP JP62200136A patent/JPS6348867A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0257875B1 (de) | 1993-04-21 |
EP0257875A3 (en) | 1988-11-23 |
DE3785521T2 (de) | 1993-07-29 |
JPS6348867A (ja) | 1988-03-01 |
EP0257875A2 (de) | 1988-03-02 |
US4755867A (en) | 1988-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
8339 | Ceased/non-payment of the annual fee |