DE3785521T2 - Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v. - Google Patents

Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v.

Info

Publication number
DE3785521T2
DE3785521T2 DE8787306965T DE3785521T DE3785521T2 DE 3785521 T2 DE3785521 T2 DE 3785521T2 DE 8787306965 T DE8787306965 T DE 8787306965T DE 3785521 T DE3785521 T DE 3785521T DE 3785521 T2 DE3785521 T2 DE 3785521T2
Authority
DE
Germany
Prior art keywords
connections
group
field effect
effect transistor
vertical mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787306965T
Other languages
English (en)
Other versions
DE3785521D1 (de
Inventor
Chu-Liang Cheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3785521D1 publication Critical patent/DE3785521D1/de
Publication of DE3785521T2 publication Critical patent/DE3785521T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
DE8787306965T 1986-08-15 1987-08-06 Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v. Expired - Fee Related DE3785521T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/896,772 US4755867A (en) 1986-08-15 1986-08-15 Vertical Enhancement-mode Group III-V compound MISFETs

Publications (2)

Publication Number Publication Date
DE3785521D1 DE3785521D1 (de) 1993-05-27
DE3785521T2 true DE3785521T2 (de) 1993-07-29

Family

ID=25406804

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787306965T Expired - Fee Related DE3785521T2 (de) 1986-08-15 1987-08-06 Senkrechter mis-anreicherungs-feldeffekt-transistor aus verbindungen der gruppe 111-v.

Country Status (4)

Country Link
US (1) US4755867A (de)
EP (1) EP0257875B1 (de)
JP (1) JPS6348867A (de)
DE (1) DE3785521T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088357B2 (ja) * 1986-12-01 1996-01-29 三菱電機株式会社 縦型ｍｏｓトランジスタ
US4914743A (en) * 1987-08-27 1990-04-03 The United States Of America As Represented By The Secretary Of The Navy Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier
US4961100A (en) * 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7465967B2 (en) * 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US8575651B2 (en) 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS55120168A (en) * 1979-03-08 1980-09-16 Sony Corp Field effect type semiconductor device
DE3040873C2 (de) * 1980-10-30 1984-02-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor
FR2555816B1 (fr) * 1983-11-25 1986-04-11 Thomson Csf Transistor a effet de champ a structure verticale
FR2555815B1 (fr) * 1983-11-25 1986-08-29 Thomson Csf Transistor de puissance a effet de champ, et procede de realisation de ce transistor
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors

Also Published As

Publication number Publication date
US4755867A (en) 1988-07-05
EP0257875B1 (de) 1993-04-21
JPS6348867A (ja) 1988-03-01
EP0257875A2 (de) 1988-03-02
EP0257875A3 (en) 1988-11-23
DE3785521D1 (de) 1993-05-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee