DE3786457D1 - Wolfram-paste zum co-sintern mit reiner tonerde und verfahren zu seiner herstellung. - Google Patents

Wolfram-paste zum co-sintern mit reiner tonerde und verfahren zu seiner herstellung.

Info

Publication number
DE3786457D1
DE3786457D1 DE8787908092T DE3786457T DE3786457D1 DE 3786457 D1 DE3786457 D1 DE 3786457D1 DE 8787908092 T DE8787908092 T DE 8787908092T DE 3786457 T DE3786457 T DE 3786457T DE 3786457 D1 DE3786457 D1 DE 3786457D1
Authority
DE
Germany
Prior art keywords
sintering
production
tungsten paste
paste
surface finish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787908092T
Other languages
English (en)
Other versions
DE3786457T2 (de
Inventor
Eric Barringer
Rogers Lind
James Hodge
Bryant Foster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CPS Technologies Corp
Original Assignee
Ceramics Process Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ceramics Process Systems Corp filed Critical Ceramics Process Systems Corp
Publication of DE3786457D1 publication Critical patent/DE3786457D1/de
Application granted granted Critical
Publication of DE3786457T2 publication Critical patent/DE3786457T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5133Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
DE87908092T 1986-11-26 1987-11-25 Wolfram-paste zum co-sintern mit reiner tonerde und verfahren zu seiner herstellung. Expired - Fee Related DE3786457T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/935,264 US4835039A (en) 1986-11-26 1986-11-26 Tungsten paste for co-sintering with pure alumina and method for producing same
PCT/US1987/003124 WO1988003919A1 (en) 1986-11-26 1987-11-25 Tungsten paste for co-sintering with pure alumina and method for producing same

Publications (2)

Publication Number Publication Date
DE3786457D1 true DE3786457D1 (de) 1993-08-12
DE3786457T2 DE3786457T2 (de) 1993-11-04

Family

ID=25466808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87908092T Expired - Fee Related DE3786457T2 (de) 1986-11-26 1987-11-25 Wolfram-paste zum co-sintern mit reiner tonerde und verfahren zu seiner herstellung.

Country Status (6)

Country Link
US (1) US4835039A (de)
EP (1) EP0290578B1 (de)
JP (1) JPH07115978B2 (de)
AT (1) ATE91276T1 (de)
DE (1) DE3786457T2 (de)
WO (1) WO1988003919A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529852A (en) * 1987-01-26 1996-06-25 Sumitomo Electric Industries, Ltd. Aluminum nitride sintered body having a metallized coating layer on its surface
JPS63277549A (ja) * 1987-05-08 1988-11-15 Fujitsu Ltd 超伝導セラミックスペ−スト組成物
EP0327068B1 (de) * 1988-02-01 1995-08-30 Mitsubishi Materials Corporation Substrat zum Herstellen einer Dickschichtschaltung
US4942076A (en) * 1988-11-03 1990-07-17 Micro Substrates, Inc. Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same
JP2665561B2 (ja) * 1989-09-26 1997-10-22 日本特殊陶業株式会社 セラミック多層基板
US5292552A (en) * 1989-12-20 1994-03-08 Sumitomo Electric Industries, Ltd. Method for forming metallized layer on an aluminum nitride sintered body
JP2772739B2 (ja) * 1991-06-20 1998-07-09 いわき電子株式会社 リードレスパッケージの外部電極構造及びその製造方法
US5698015A (en) * 1995-05-19 1997-12-16 Nikko Company Conductor paste for plugging through-holes in ceramic circuit boards and a ceramic circuit board having this conductor paste
JPH09260543A (ja) * 1996-03-22 1997-10-03 Toshiba Corp 窒化アルミニウム配線基板およびその製造方法
US6111351A (en) 1997-07-01 2000-08-29 Candescent Technologies Corporation Wall assembly and method for attaching walls for flat panel display
US6200181B1 (en) * 1997-07-01 2001-03-13 Candescent Technologies Corporation Thermally conductive spacer materials and spacer attachment methods for thin cathode ray tube
US6356013B1 (en) 1997-07-02 2002-03-12 Candescent Intellectual Property Services, Inc. Wall assembly and method for attaching walls for flat panel display
US6117367A (en) * 1998-02-09 2000-09-12 International Business Machines Corporation Pastes for improved substrate dimensional control
US6068912A (en) * 1998-05-01 2000-05-30 International Business Machines Corporation Platible non-metallic filler material for metallurgical screening paste
US6483690B1 (en) 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
WO2003101166A1 (fr) * 2002-05-28 2003-12-04 Sumitomo Electric Industries, Ltd. Pastille frittee a base de nitrure d'aluminium comportant une couche metallisee et procede de preparation associe
JP2006253199A (ja) * 2005-03-08 2006-09-21 Sumitomo Metal Electronics Devices Inc メタライズ組成物とこれを用いて行う配線基板の製造方法
US9056354B2 (en) * 2011-08-30 2015-06-16 Siemens Aktiengesellschaft Material system of co-sintered metal and ceramic layers
US8999226B2 (en) 2011-08-30 2015-04-07 Siemens Energy, Inc. Method of forming a thermal barrier coating system with engineered surface roughness
US9186866B2 (en) * 2012-01-10 2015-11-17 Siemens Aktiengesellschaft Powder-based material system with stable porosity
CN114736005A (zh) * 2022-03-14 2022-07-12 中国电子科技集团公司第四十三研究所 钨金属化-多层氧化铝黑瓷基片及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB980975A (en) * 1962-09-17 1965-01-20 M O Valve Co Ltd Improvements in or relating to methods of forming metallized surfaces on ceramic bodies
US3312533A (en) * 1963-06-26 1967-04-04 Philips Corp Ceramic article with sintered metallic layer and flux
US3993821A (en) * 1974-12-23 1976-11-23 Minnesota Mining And Manufacturing Company Metallization of beryllia composites
US4404154A (en) * 1979-12-07 1983-09-13 Arons Richard M Method for preparing corrosion-resistant ceramic shapes
JPS6014494A (ja) * 1983-07-04 1985-01-25 株式会社日立製作所 セラミツク多層配線基板およびその製造方法
US4678683A (en) * 1985-12-13 1987-07-07 General Electric Company Process for cofiring structure comprised of ceramic substrate and refractory metal metallization
JPH0632355B2 (ja) * 1986-01-27 1994-04-27 株式会社日立製作所 セラミツク配線基板とその製造方法

Also Published As

Publication number Publication date
EP0290578A1 (de) 1988-11-17
JPH01501465A (ja) 1989-05-25
US4835039A (en) 1989-05-30
ATE91276T1 (de) 1993-07-15
WO1988003919A1 (en) 1988-06-02
EP0290578B1 (de) 1993-07-07
JPH07115978B2 (ja) 1995-12-13
DE3786457T2 (de) 1993-11-04

Similar Documents

Publication Publication Date Title
DE3786457T2 (de) Wolfram-paste zum co-sintern mit reiner tonerde und verfahren zu seiner herstellung.
DE2960224D1 (en) High density, polycrystalline silicon carbide articles and method for their preparation by pressureless sintering
DE3789628T2 (de) Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht.
IT1092222B (it) Composizioni in polvere di silicio carburo sinterizzabili
MX164320B (es) Composicion de lente,articulos y metodo de fabricacion
DE69316118D1 (de) Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung
DE68909673D1 (de) Verfahren zur Herstellung von keramischen Pulvern aus Borcarbid und Titandiborid mit Borcarbid als Substrat und danach hergestellte Zusammensetzung.
DE3762868D1 (de) Polymethacrylat-formmasse mit hoher waermeformbestaendigkeit und hoher thermischer stabilitaet.
DE68923781T2 (de) Keramische Zusammensetzung mit hoher Dielektrizitätskonstante und keramische Kondensatorelemente.
DE3777930D1 (de) Halbleitende keramische zusammensetzung.
DE68904877T2 (de) Koerper hoher dichte aus mit siliciumcarbidpulvern gefuellten vorkeramischen polysilazanen.
GB2201156B (en) Impregnant compositions for porous articles
DE68926099T2 (de) Dielektrische keramische Zusammensetzung
DE68906841T2 (de) Dielektrische keramische Zusammensetzung.
EP0256284A3 (en) Composition for use in the production of integrated circuits and method for its preparation and use
EP0230675A3 (en) Ceramic wiring substrate and process for producing the same
DE3777913D1 (de) Keramische zusammensetzung mit verbesserten elektrischen und mechanischen eigenschaften.
DE3884578D1 (de) Polybuten-1-zusammensetzung und daraus hergestellte wasserundurchlaessige schicht.
GB2151189B (en) Applying patterns to ceramic articles
GB2165860B (en) High density, sintered silicon nitride containing articles and methods for using the same to process molten nickel
JPS5370395A (en) Conductive paste
DE68905668T2 (de) Dielektrische keramische Zusammensetzung.
JPS5321294A (en) Preparation of oxidation-polymerizable and vinyl-modified alkyd resin
Shepherd et al. Sunrise Minerals
DE3786142T2 (de) Verfahren zur Herstellung von Aluminiumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee