DE3786851D1 - Feststellung des endpunktes beim graben-aetzen durch laserinduzierte fluoreszenz. - Google Patents

Feststellung des endpunktes beim graben-aetzen durch laserinduzierte fluoreszenz.

Info

Publication number
DE3786851D1
DE3786851D1 DE8787106476T DE3786851T DE3786851D1 DE 3786851 D1 DE3786851 D1 DE 3786851D1 DE 8787106476 T DE8787106476 T DE 8787106476T DE 3786851 T DE3786851 T DE 3786851T DE 3786851 D1 DE3786851 D1 DE 3786851D1
Authority
DE
Germany
Prior art keywords
diggen
laser
determination
acid
end point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787106476T
Other languages
English (en)
Other versions
DE3786851T2 (de
Inventor
Reid Stuart Bennett
Linda Mero Ephrath
Geraldine Cogin Schwartz
Gary Stewart Selwyn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3786851D1 publication Critical patent/DE3786851D1/de
Application granted granted Critical
Publication of DE3786851T2 publication Critical patent/DE3786851T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6402—Atomic fluorescence; Laser induced fluorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/122—Kinetic analysis; determining reaction rate
    • G01N2201/1222—Endpoint determination; reaction time determination
DE87106476T 1986-06-25 1987-05-05 Feststellung des Endpunktes beim Graben-Ätzen durch laserinduzierte Fluoreszenz. Expired - Fee Related DE3786851T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/878,144 US4675072A (en) 1986-06-25 1986-06-25 Trench etch endpoint detection by LIF

Publications (2)

Publication Number Publication Date
DE3786851D1 true DE3786851D1 (de) 1993-09-09
DE3786851T2 DE3786851T2 (de) 1994-03-17

Family

ID=25371471

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87106476T Expired - Fee Related DE3786851T2 (de) 1986-06-25 1987-05-05 Feststellung des Endpunktes beim Graben-Ätzen durch laserinduzierte Fluoreszenz.

Country Status (4)

Country Link
US (1) US4675072A (de)
EP (1) EP0256216B1 (de)
JP (1) JPS636845A (de)
DE (1) DE3786851T2 (de)

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US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
US5225888A (en) * 1990-12-26 1993-07-06 International Business Machines Corporation Plasma constituent analysis by interferometric techniques
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
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US5718511A (en) * 1995-06-30 1998-02-17 Lam Research Corporation Temperature mapping method
US5654796A (en) * 1995-12-22 1997-08-05 Lam Research Corporation Apparatus and method for mapping plasma characteristics
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US6071375A (en) * 1997-12-31 2000-06-06 Lam Research Corporation Gas purge protection of sensors and windows in a gas phase processing reactor
US6379981B2 (en) * 1998-03-27 2002-04-30 Micron Technology, Inc. Methods incorporating detectable atoms into etching processes
US6254717B1 (en) 1998-04-23 2001-07-03 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6223755B1 (en) 1998-04-23 2001-05-01 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6132577A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6165312A (en) * 1998-04-23 2000-12-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6134005A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6246473B1 (en) 1998-04-23 2001-06-12 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6275740B1 (en) 1998-04-23 2001-08-14 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6269278B1 (en) 1998-04-23 2001-07-31 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6123983A (en) * 1998-04-23 2000-09-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6261470B1 (en) 1998-04-23 2001-07-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
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US6419801B1 (en) 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
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US6136712A (en) * 1998-09-30 2000-10-24 Lam Research Corporation Method and apparatus for improving accuracy of plasma etching process
US6355908B1 (en) * 1999-03-31 2002-03-12 Matsushita Electric Industrial Co., Ltd. Method and apparatus for focusing a laser
US6547458B1 (en) * 1999-11-24 2003-04-15 Axcelis Technologies, Inc. Optimized optical system design for endpoint detection
US20030153101A1 (en) * 2001-04-09 2003-08-14 Michihiko Takase Method for surface treatment and system for fabricating semiconductor device
US6376262B1 (en) * 2001-05-31 2002-04-23 National Semiconductor Corporation Method of forming a semiconductor device using double endpoint detection
US20030064521A1 (en) * 2001-09-28 2003-04-03 Zhijian Lu Method for ending point detection during etching process
DE10210518A1 (de) * 2002-03-09 2003-10-02 Mtu Aero Engines Gmbh Verfahren zur Entschichtung von Triebwerksbauteilen und Vorrichtung zur Durchführung des Verfahrens
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DE10255850B4 (de) * 2002-11-29 2007-12-06 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung von Halbleiterstrukturen unter Ausbildung einer Signalschicht zur Generierung charakteristischer optischer Plasmaemissionen und integrierter Schaltungschip
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JP2008208419A (ja) * 2007-02-26 2008-09-11 Phyzchemix Corp 真空処理装置及びその処理終了点の検出方法
JP5938592B2 (ja) * 2013-01-18 2016-06-22 三井造船株式会社 プラズマ中の不純物の計測方法、計測装置、及び成膜装置
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JP6356516B2 (ja) * 2014-07-22 2018-07-11 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6584229B2 (ja) * 2015-08-27 2019-10-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびドライエッチングの終点検出方法
US11769652B2 (en) * 2018-07-31 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods for controlling wafer uniformity in plasma-based process
CN114080662A (zh) 2020-06-16 2022-02-22 株式会社日立高新技术 等离子处理装置以及等离子处理方法
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US11437289B2 (en) 2020-09-30 2022-09-06 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

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Also Published As

Publication number Publication date
EP0256216A3 (en) 1989-01-25
US4675072A (en) 1987-06-23
DE3786851T2 (de) 1994-03-17
EP0256216A2 (de) 1988-02-24
JPS636845A (ja) 1988-01-12
EP0256216B1 (de) 1993-08-04

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