DE3851653D1 - Anordnung und Verfahren zum Positionieren der Abbildung der auf einer Maske befindlichen Struktur auf ein Substrat. - Google Patents

Anordnung und Verfahren zum Positionieren der Abbildung der auf einer Maske befindlichen Struktur auf ein Substrat.

Info

Publication number
DE3851653D1
DE3851653D1 DE3851653T DE3851653T DE3851653D1 DE 3851653 D1 DE3851653 D1 DE 3851653D1 DE 3851653 T DE3851653 T DE 3851653T DE 3851653 T DE3851653 T DE 3851653T DE 3851653 D1 DE3851653 D1 DE 3851653D1
Authority
DE
Germany
Prior art keywords
markings
image
mask
wafer
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851653T
Other languages
English (en)
Inventor
Gerhard Dr Stengl
Hans Dr Loeschner
Ernst Dr Hammel
Hilton F Dr Glavish
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OESTERR INVESTITIONSKREDIT
Ims Ionen Mikrofabrikations Systems GmbH
Original Assignee
OESTERR INVESTITIONSKREDIT
Ims Ionen Mikrofabrikations Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OESTERR INVESTITIONSKREDIT, Ims Ionen Mikrofabrikations Systems GmbH filed Critical OESTERR INVESTITIONSKREDIT
Application granted granted Critical
Publication of DE3851653D1 publication Critical patent/DE3851653D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
DE3851653T 1987-06-02 1988-06-01 Anordnung und Verfahren zum Positionieren der Abbildung der auf einer Maske befindlichen Struktur auf ein Substrat. Expired - Fee Related DE3851653D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0140487A AT393925B (de) 1987-06-02 1987-06-02 Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind

Publications (1)

Publication Number Publication Date
DE3851653D1 true DE3851653D1 (de) 1994-11-03

Family

ID=3513165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851653T Expired - Fee Related DE3851653D1 (de) 1987-06-02 1988-06-01 Anordnung und Verfahren zum Positionieren der Abbildung der auf einer Maske befindlichen Struktur auf ein Substrat.

Country Status (5)

Country Link
US (1) US4967088A (de)
EP (1) EP0294363B1 (de)
JP (1) JPH07109817B2 (de)
AT (2) AT393925B (de)
DE (1) DE3851653D1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68928821D1 (de) * 1988-06-01 1998-11-05 Ims Ionen Mikrofab Syst Ionenstrahllithographie
US5168306A (en) * 1989-04-04 1992-12-01 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure apparatus
DE3941889A1 (de) * 1989-12-19 1991-06-20 Integrated Circuit Testing Verfahren und vorrichtung zur potentialmessung auf leiterbahnen einer programmgesteuerten integrierten schaltung
JP3192500B2 (ja) * 1992-11-19 2001-07-30 株式会社日立製作所 電子線描画方法および電子線描画装置
JPH08274020A (ja) * 1995-02-13 1996-10-18 Ims Ionen Mikrofab Syst Gmbh 荷電粒子による投影リソグラフィー装置
JPH09320948A (ja) * 1996-05-27 1997-12-12 Nikon Corp 基板の受け渡し方法及び露光装置
US6225637B1 (en) * 1996-10-25 2001-05-01 Canon Kabushiki Kaisha Electron beam exposure apparatus
IL124592A (en) 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
US6174741B1 (en) 1997-12-19 2001-01-16 Siemens Aktiengesellschaft Method for quantifying proximity effect by measuring device performance
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP2000012455A (ja) * 1998-06-25 2000-01-14 Nikon Corp 荷電粒子線転写露光装置及び荷電粒子線転写露光装置におけるマスクと感応基板の位置合わせ方法
US6989546B2 (en) * 1998-08-19 2006-01-24 Ims-Innenmikrofabrikations Systeme Gmbh Particle multibeam lithography
EP0989595A3 (de) * 1998-09-18 2001-09-19 Ims-Ionen Mikrofabrikations Systeme Gmbh Vorrichtung zur Bearbeitung von Substratoberflächen
US6549649B1 (en) * 1999-03-04 2003-04-15 Electroglas, Inc. Apparatus and method for projecting an alignment image
US6437347B1 (en) * 1999-04-13 2002-08-20 International Business Machines Corporation Target locking system for electron beam lithography
JP2001284239A (ja) * 2000-04-03 2001-10-12 Nikon Corp 荷電粒子線露光装置、及び半導体デバイスの製造方法
JP4741115B2 (ja) * 2000-08-14 2011-08-03 イーリス エルエルシー リソグラフィ投影装置およびデバイス製造方法
DE10041040A1 (de) * 2000-08-22 2002-03-07 Zeiss Carl Vorrichtung und Verfahren zur Belichtung einer strahlungsempfindlichen Schicht mittels geladener Teilchen sowie Maske hierfür
US6661015B2 (en) * 2000-09-15 2003-12-09 Ims-Ionen Mikrofabrikations Systeme Gmbh Pattern lock system
GB2375182B (en) * 2001-03-19 2004-01-14 Ims Ionen Mikrofab Syst Thermal control of image pattern distortions
DE10115915A1 (de) * 2001-03-30 2002-10-02 Zeiss Carl Vorrichtung zur Justierung von Einrichtungen und zum Einstellen von Verstellwegen
DE10136387A1 (de) * 2001-07-26 2003-02-13 Zeiss Carl Objektiv, insbesondere Objektiv für die Halbleiter-Lithographie
US6760641B2 (en) * 2001-08-08 2004-07-06 Asml Holding N.V. Discrete time trajectory planner for lithography system
JP3984019B2 (ja) * 2001-10-15 2007-09-26 パイオニア株式会社 電子ビーム装置及び電子ビーム調整方法
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
DE10219514A1 (de) 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
US20040120457A1 (en) * 2002-12-20 2004-06-24 University Of Massachusetts Medical Center Scatter reducing device for imaging
RU2243613C1 (ru) * 2003-07-16 2004-12-27 Гурович Борис Аронович Способ формирования объемной структуры
JP4199618B2 (ja) * 2003-08-12 2008-12-17 財団法人国際科学振興財団 電子ビーム露光装置及び露光方法
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
US7265917B2 (en) * 2003-12-23 2007-09-04 Carl Zeiss Smt Ag Replacement apparatus for an optical element
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
US7332729B1 (en) * 2004-06-18 2008-02-19 Novelx, Inc. System and method for multiple electron, ion, and photon beam alignment
JP5505821B2 (ja) * 2004-11-17 2014-05-28 イーエムエス ナノファブリカツィオン アーゲー 粒子ビーム露光装置のためのパターンロック装置
KR100566096B1 (ko) * 2004-11-24 2006-03-31 한국전자통신연구원 노광 장치
US7459701B2 (en) * 2005-06-08 2008-12-02 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method
US20080099696A1 (en) * 2006-10-31 2008-05-01 Applied Materials, Inc. Shaped apertures in an ion implanter
NL2001369C2 (nl) * 2007-03-29 2010-06-14 Ims Nanofabrication Ag Werkwijze voor maskerloze deeltjesbundelbelichting.
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
DE102008000967B4 (de) 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
JP2010040732A (ja) * 2008-08-05 2010-02-18 Nuflare Technology Inc 描画装置及び描画方法
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
CN102834905B (zh) * 2010-02-09 2016-05-11 因特瓦克公司 太阳能电池制造中使用的可调阴影掩模组件
US20120223245A1 (en) * 2011-03-01 2012-09-06 John Bennett Electron beam source system and method
TW201248336A (en) 2011-04-22 2012-12-01 Mapper Lithography Ip Bv Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer
NL2008679C2 (en) 2011-04-22 2013-06-26 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark.
WO2012158025A2 (en) 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
CN104428883B (zh) 2011-11-08 2017-02-22 因特瓦克公司 基板处理系统和方法
NL2011681C2 (en) 2012-10-26 2014-05-01 Mapper Lithography Ip Bv Method of determining a position of a substrate in a lithography system, substrate for use in such method, and lithography system for carrying out such method.
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
US9333733B2 (en) * 2013-07-26 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Multi-part mask for implanting workpieces

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL158008B (nl) * 1950-04-28 Ibm Holografisch geheugen.
US2919381A (en) * 1956-07-25 1959-12-29 Farrand Optical Co Inc Electron lens
BE563662A (de) * 1957-01-03
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US4090077A (en) * 1969-03-05 1978-05-16 Siemens Aktiengesellschaft Particle beam device with a deflection system and a stigmator
US3845312A (en) * 1972-07-13 1974-10-29 Texas Instruments Inc Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
JPS5145005A (ja) * 1974-10-14 1976-04-17 Kanto Itami Denki Kk Inenoikubyohoho
JPS5168052A (de) * 1974-12-11 1976-06-12 Matsushita Electric Ind Co Ltd
US3928094A (en) * 1975-01-16 1975-12-23 Fairchild Camera Instr Co Method of aligning a wafer beneath a mask and system therefor and wafer having a unique alignment pattern
JPS5228239A (en) * 1975-08-29 1977-03-03 Hitachi Ltd Testing system for unit of semiconductor integrated circuit
DD136670A1 (de) * 1976-02-04 1979-07-18 Rudolf Sacher Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
DE2606169C2 (de) * 1976-02-17 1983-09-01 Polymer-Physik GmbH & Co KG, 2844 Lemförde Elektronenaustrittsfenster für eine Elektronenstrahlquelle
US4085330A (en) * 1976-07-08 1978-04-18 Burroughs Corporation Focused ion beam mask maker
JPS5398781A (en) * 1976-11-25 1978-08-29 Jeol Ltd Electron ray exposure unit
DE2702444C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur Abbildung einer Maske auf ein Präparat
DE2739502C3 (de) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens
US4139773A (en) * 1977-11-04 1979-02-13 Oregon Graduate Center Method and apparatus for producing bright high resolution ion beams
GB1597596A (en) * 1978-05-31 1981-09-09 Funkwerk Erfurt Veb K Manufacture of semiconductor elements
DE2827085C2 (de) * 1978-06-16 1980-07-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zur Brennweitenbestimmung langbrennweitiger elektronenoptischer Linsen
DE2939044A1 (de) * 1979-09-27 1981-04-09 Ibm Deutschland Gmbh, 7000 Stuttgart Einrichtung fuer elektronenstrahllithographie
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
US4344160A (en) * 1980-05-02 1982-08-10 The Perkin-Elmer Corporation Automatic wafer focusing and flattening system
DE3033160A1 (de) * 1980-09-03 1982-04-22 Bayer Ag, 5090 Leverkusen N-oxiamide, verfahren zu ihrer herstellung sowie ihre verwendung als fungizide
JPS6033708B2 (ja) * 1980-11-28 1985-08-05 五洋建設株式会社 アンカ−の方向表示装置
DE3138896A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Elektronenoptisches system mit vario-formstrahl zur erzeugung und messung von mikrostrukturen
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
JPS58181535A (ja) * 1982-04-13 1983-10-24 Yoshiaki Ihara マシニングセンタ
JPS59200721A (ja) * 1983-04-27 1984-11-14 Toshiba Corp シヤドウマスクの製造方法
DE3370699D1 (en) * 1983-05-25 1987-05-07 Ibm Deutschland Process for pattern transfer onto a light-sensitive layer
EP0134269B1 (de) * 1983-08-11 1988-01-07 Ibm Deutschland Gmbh Elektronenstrahl-Projektionslithographie
DE3410885A1 (de) * 1984-03-24 1985-10-03 Ibm Deutschland Gmbh, 7000 Stuttgart Fehlerkorrigierte korpuskularstrahllithographie
JPH0616391B2 (ja) * 1984-07-13 1994-03-02 株式会社日立製作所 イオンビーム照射装置
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
AT391772B (de) * 1986-05-16 1990-11-26 Ims Ionen Mikrofab Syst Anordnung zum positionieren der abbildung der struktur einer maske auf ein substrat
AT393334B (de) * 1988-01-22 1991-09-25 Ims Ionen Mikrofab Syst Anordnung zur stabilisierung einer bestrahlten maske

Also Published As

Publication number Publication date
EP0294363A2 (de) 1988-12-07
JPS6464216A (en) 1989-03-10
ATA140487A (de) 1991-06-15
ATE112400T1 (de) 1994-10-15
AT393925B (de) 1992-01-10
EP0294363A3 (de) 1991-04-17
EP0294363B1 (de) 1994-09-28
JPH07109817B2 (ja) 1995-11-22
US4967088A (en) 1990-10-30

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee