DE3854773D1 - Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht - Google Patents

Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht

Info

Publication number
DE3854773D1
DE3854773D1 DE3854773T DE3854773T DE3854773D1 DE 3854773 D1 DE3854773 D1 DE 3854773D1 DE 3854773 T DE3854773 T DE 3854773T DE 3854773 T DE3854773 T DE 3854773T DE 3854773 D1 DE3854773 D1 DE 3854773D1
Authority
DE
Germany
Prior art keywords
intrinsic layer
bandgap
solar cell
film solar
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3854773T
Other languages
English (en)
Other versions
DE3854773T2 (de
Inventor
Subhendu Guha
Chi-Chung Yang
Stanford R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3854773D1 publication Critical patent/DE3854773D1/de
Publication of DE3854773T2 publication Critical patent/DE3854773T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/023—Hydrogen absorption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
    • H01F1/047—Alloys characterised by their composition
    • H01F1/053—Alloys characterised by their composition containing rare earth metals
    • H01F1/055—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
    • H01F1/057—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
    • H01F1/0571—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B in the form of particles, e.g. rapid quenched powders or ribbon flakes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
    • H01F1/047—Alloys characterised by their composition
    • H01F1/053—Alloys characterised by their composition containing rare earth metals
    • H01F1/055—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
    • H01F1/057—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
    • H01F1/0571—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B in the form of particles, e.g. rapid quenched powders or ribbon flakes
    • H01F1/0573—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B in the form of particles, e.g. rapid quenched powders or ribbon flakes obtained by reduction or by hydrogen decrepitation or embrittlement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE3854773T 1987-08-19 1988-05-12 Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht Expired - Lifetime DE3854773T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/087,264 US4816082A (en) 1987-08-19 1987-08-19 Thin film solar cell including a spatially modulated intrinsic layer

Publications (2)

Publication Number Publication Date
DE3854773D1 true DE3854773D1 (de) 1996-01-25
DE3854773T2 DE3854773T2 (de) 1996-06-13

Family

ID=22204120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854773T Expired - Lifetime DE3854773T2 (de) 1987-08-19 1988-05-12 Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht

Country Status (9)

Country Link
US (1) US4816082A (de)
EP (1) EP0304145B1 (de)
JP (1) JPH0738454B2 (de)
KR (1) KR960015529B1 (de)
CN (1) CN1010268B (de)
AT (1) ATE131660T1 (de)
CA (1) CA1289232C (de)
DE (1) DE3854773T2 (de)
ES (1) ES2080723T3 (de)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3906345A1 (de) * 1989-02-28 1990-08-30 Eckhard Dr Kaufmann Thermoelektrisches wandlerelement
US5101260A (en) * 1989-05-01 1992-03-31 Energy Conversion Devices, Inc. Multilayer light scattering photovoltaic back reflector and method of making same
DE3917685A1 (de) * 1989-05-31 1990-12-06 Telefunken Electronic Gmbh Halbleiter-bauelement
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
US5104455A (en) * 1990-01-09 1992-04-14 Sharp Kabushiki Kaisha Amorphous semiconductor solar cell
JPH03252171A (ja) * 1990-02-28 1991-11-11 Sharp Corp 非晶質太陽電池
JP2632740B2 (ja) * 1990-06-11 1997-07-23 シャープ株式会社 非晶質半導体太陽電池
JP2719230B2 (ja) * 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
JP2895213B2 (ja) * 1990-11-26 1999-05-24 キヤノン株式会社 光起電力素子
JP2733383B2 (ja) * 1990-12-13 1998-03-30 キヤノン株式会社 太陽電池
JP2733385B2 (ja) * 1990-12-13 1998-03-30 キヤノン株式会社 太陽電池
JP2710246B2 (ja) * 1991-02-07 1998-02-10 キヤノン株式会社 光起電力素子
JP2918345B2 (ja) * 1991-02-20 1999-07-12 キヤノン株式会社 光起電力素子
JP2999280B2 (ja) * 1991-02-22 2000-01-17 キヤノン株式会社 光起電力素子
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
JP2951146B2 (ja) * 1992-04-15 1999-09-20 キヤノン株式会社 光起電力デバイス
JP2761156B2 (ja) * 1992-06-30 1998-06-04 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
CA2102948C (en) * 1992-11-16 1998-10-27 Keishi Saito Photoelectric conversion element and power generation system using the same
JP2733176B2 (ja) * 1992-11-16 1998-03-30 キヤノン株式会社 光起電力素子及びそれを用いた発電装置
DE69410301T2 (de) * 1993-01-29 1998-09-24 Canon Kk Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
WO1995026571A1 (en) * 1994-03-25 1995-10-05 Amoco/Enron Solar Stabilized amorphous silicon and devices containing same
JP3169337B2 (ja) * 1995-05-30 2001-05-21 キヤノン株式会社 光起電力素子及びその製造方法
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
US5626976A (en) * 1995-07-24 1997-05-06 Motorola, Inc. Flexible energy storage device with integral charging unit
US5719076A (en) * 1996-04-24 1998-02-17 United Solar Systems Corporation Method for the manufacture of semiconductor devices with optimized hydrogen content
EP0831538A3 (de) * 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Photovoltaisches Bauelement mit einer spezifisch dotierten Schicht
JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
JP4171428B2 (ja) 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
EP1949451A4 (de) * 2005-08-22 2016-07-20 Q1 Nanosystems Inc Nanostruktur und diese implementierende fotovoltaische zelle
JP5222281B2 (ja) * 2006-04-06 2013-06-26 アプライド マテリアルズ インコーポレイテッド ラージエリア基板への酸化亜鉛透明導電性酸化物の反応性スパッタリング
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
IL176885A0 (en) * 2006-07-16 2006-10-31 Solaroll Ltd A thin-film photovoltaic conversion device and method of manufacturing the same
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
KR101087351B1 (ko) 2006-12-25 2011-11-25 샤프 가부시키가이샤 광전변환 장치 및 그 제조 방법
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US20090007950A1 (en) * 2007-07-05 2009-01-08 Eliade Stefanescu Longitudinal quantum heat converter
US20100019618A1 (en) * 2007-07-05 2010-01-28 Eliade Stefanescu Transversal quantum heat converter
US7919400B2 (en) * 2007-07-10 2011-04-05 Stion Corporation Methods for doping nanostructured materials and nanostructured thin films
KR101536101B1 (ko) * 2007-08-02 2015-07-13 어플라이드 머티어리얼스, 인코포레이티드 박막 반도체 물질들을 이용하는 박막 트랜지스터들
CN101373795A (zh) * 2007-08-20 2009-02-25 鸿富锦精密工业（深圳）有限公司 太阳能电池
US8614396B2 (en) * 2007-09-28 2013-12-24 Stion Corporation Method and material for purifying iron disilicide for photovoltaic application
US8058092B2 (en) * 2007-09-28 2011-11-15 Stion Corporation Method and material for processing iron disilicide for photovoltaic application
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
DE102007058750A1 (de) 2007-12-04 2009-06-18 Parabel Ag Mehrschichtiges Solarelement
WO2009071627A2 (de) 2007-12-04 2009-06-11 Parabel Ag Mehrschichtiges solarelement
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8075723B1 (en) 2008-03-03 2011-12-13 Stion Corporation Laser separation method for manufacture of unit cells for thin film photovoltaic materials
US8772078B1 (en) 2008-03-03 2014-07-08 Stion Corporation Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US7939454B1 (en) 2008-05-31 2011-05-10 Stion Corporation Module and lamination process for multijunction cells
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
CA2744774C (en) 2008-07-17 2017-05-23 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US8207008B1 (en) 2008-08-01 2012-06-26 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic
US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
USD625695S1 (en) 2008-10-14 2010-10-19 Stion Corporation Patterned thin film photovoltaic module
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US20100147380A1 (en) * 2008-12-17 2010-06-17 Seagate Technology Llc Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers and Wide Bandgap Dopant Layers
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
USD628332S1 (en) 2009-06-12 2010-11-30 Stion Corporation Pin striped thin film solar module for street lamp
USD662040S1 (en) 2009-06-12 2012-06-19 Stion Corporation Pin striped thin film solar module for garden lamp
USD632415S1 (en) 2009-06-13 2011-02-08 Stion Corporation Pin striped thin film solar module for cluster lamp
USD652262S1 (en) 2009-06-23 2012-01-17 Stion Corporation Pin striped thin film solar module for cooler
USD662041S1 (en) 2009-06-23 2012-06-19 Stion Corporation Pin striped thin film solar module for laptop personal computer
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
USD627696S1 (en) 2009-07-01 2010-11-23 Stion Corporation Pin striped thin film solar module for recreational vehicle
CN101820006B (zh) * 2009-07-20 2013-10-02 湖南共创光伏科技有限公司 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
JP5889791B2 (ja) * 2009-09-24 2016-03-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ソース・ドレイン金属エッチングのためのウェットプロセスを用いた金属酸化物又は金属酸窒化物ｔｆｔの製造方法
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
CN101697359B (zh) * 2009-10-26 2012-01-25 新奥光伏能源有限公司 一种太阳能电池
CN101794834B (zh) * 2009-12-14 2013-06-12 湖南共创光伏科技有限公司 设有上转换荧光材料膜层的高效太阳能薄膜电池及其膜层制备方法
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US9202954B2 (en) * 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
KR101084984B1 (ko) * 2010-03-15 2011-11-21 한국철강 주식회사 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치의 제조 방법
TWI470818B (zh) * 2010-03-24 2015-01-21 Hitachi Ltd Solar battery
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
CN101866973A (zh) * 2010-06-09 2010-10-20 中国科学院电工研究所 一种用于太阳电池的薄膜硅/晶体硅异质pn结结构
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
CN102034880B (zh) * 2010-11-10 2012-04-04 曾明生 一种高效太阳能光伏电池和一种高效太阳能光伏电池系统
KR20120067544A (ko) * 2010-12-16 2012-06-26 엘지전자 주식회사 박막 태양전지 및 이의 제조 방법
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
KR101573029B1 (ko) * 2011-02-23 2015-12-03 한국전자통신연구원 박막 태양전지 및 그의 제조방법
EP2546667A1 (de) * 2011-07-13 2013-01-16 Jean Randhahn Methode zur Charakterisierung von grossflächigen photovoltaischen Dünnschichtzellen
CN102280514B (zh) * 2011-08-12 2013-03-13 哈尔滨工业大学 本征层为碳锗薄膜的太阳能电池的制备方法
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
CN102522447A (zh) * 2011-12-22 2012-06-27 南开大学 一种吸收层具有带隙梯度结构的微晶硅锗薄膜太阳电池
US9082911B2 (en) 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
US20140264998A1 (en) 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
US9954126B2 (en) 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
CN104393087A (zh) * 2014-11-14 2015-03-04 西安电子科技大学 具有渐变锗组分本征层的非晶硅薄膜太阳电池及其制备方法
CN104733549B (zh) * 2015-03-25 2017-04-12 江苏武进汉能光伏有限公司 一种提高薄膜太阳能电池功率的方法
CN105895715A (zh) * 2016-04-29 2016-08-24 苏州协鑫集成科技工业应用研究院有限公司 异质结太阳能电池及其制备方法
CN106784146A (zh) * 2016-12-26 2017-05-31 济南大学 一种甲胺铅碘/可调带隙非晶硅锗叠层薄膜电池组装技术
CN114759098B (zh) * 2020-12-29 2023-12-01 隆基绿能科技股份有限公司 一种碳化硅光伏器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
JPS5688377A (en) * 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
JPS5818975A (ja) * 1981-07-27 1983-02-03 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5825282A (ja) * 1981-08-07 1983-02-15 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5825281A (ja) * 1981-08-07 1983-02-15 Semiconductor Energy Lab Co Ltd 半導体装置
JPS5898988A (ja) * 1981-12-08 1983-06-13 Matsushita Electric Ind Co Ltd 太陽光電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPH065765B2 (ja) * 1982-12-23 1994-01-19 株式会社半導体エネルギ−研究所 光電変換装置
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
DE8430810U1 (de) * 1984-10-19 1986-05-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper

Also Published As

Publication number Publication date
US4816082A (en) 1989-03-28
CN1010268B (zh) 1990-10-31
KR890004436A (ko) 1989-04-22
CN1032267A (zh) 1989-04-05
DE3854773T2 (de) 1996-06-13
KR960015529B1 (ko) 1996-11-15
CA1289232C (en) 1991-09-17
EP0304145A2 (de) 1989-02-22
ATE131660T1 (de) 1995-12-15
JPS6471182A (en) 1989-03-16
ES2080723T3 (es) 1996-02-16
EP0304145B1 (de) 1995-12-13
EP0304145A3 (en) 1990-03-21
JPH0738454B2 (ja) 1995-04-26

Similar Documents

Publication Publication Date Title
DE3854773D1 (de) Dünnschichtsolarzelle mit räumlich modulierter intrinsischer Schicht
EP0838864A3 (de) Herstellungsverfahren einer Dünnschicht-Sonnenzelle und Einrichtung zur Herstellung derselben
DE3067762D1 (en) A silver containing thick film conductor composition, a method for producing such a composition, a method of preparing a solar cell comprising screen printing said composition on an n-type layer of a semiconductor wafer and the solar cells thus obtained
AU1926488A (en) Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn, Se and in an amount of 1 to 40 atomic per cent
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
EP0341017A3 (de) Sonnenzelle mit niedergeschlagener Siliziumschicht
EP0221767A3 (de) Fehlertolerante Dünnschicht einer photovoltaischen Zelle
FR2549642B1 (fr) Cellule solaire
JPS6468977A (en) Tandem solar battery module
KR970004102A (ko) 집적화 박막 태양전지와 그 제조방법
EP0561500A3 (en) Semiconductor device with rf deposited intrinsic buffer layer
JPS56167370A (en) Amorphous solar cell
KR870008225A (ko) 유기중합체필름내의 금속 구조의 부착을 위해 광감성 음극을 사용하는 금속층 부착방법
JPS56129381A (en) Photoidentifying device
JPS5743477A (en) Photovoltaic device
JPS5726476A (en) Linear photoelectromotive force element
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS5739569A (en) Solid state image pickup device
ES484353A1 (es) Un dispositivo fotovoltaico mejorado.
SE7909584L (sv) Solcell med grund homoovergang
JPS57116346A (en) Photoconductive material
JPS56158472A (en) Semiconductor device
JPS644083A (en) Photovoltaic device
Gheorghita-Oancea et al. Some observations on the appearance and properties of the photovoltaic effect in thin layers of tellurium deposited obliquely in a vacuum
JPS5762054A (en) Photoconductive member

Legal Events

Date Code Title Description
8364 No opposition during term of opposition