DE3876666D1 - Halbleiter-festwertspeichereinrichtung. - Google Patents

Halbleiter-festwertspeichereinrichtung.

Info

Publication number: DE3876666D1
Authority: DE; Germany
Prior art keywords: memory device; fixed memory; semiconductor fixed; semiconductor; memory
Prior art date: 1987-04-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8888105638T

Other languages

English (en)

Other versions

DE3876666T2 (de

Inventor

Osamu C O Patent Div Matsumoto

Tadashi C O Patent Di Maruyama

Hiroyoshi C O Patent Di Murata

Isao Abe

Tomohisa C O Patent Shigematsu

Kazuyoshi C O Patent D Shinada

Yasoji C O Patent Divis Suzuki

Ichiro C O Patent Di Kobayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Toshiba Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-04-09

Filing date

1988-04-08

Publication date

1993-01-28

1988-04-08 Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp

1993-01-28 Application granted granted Critical

1993-01-28 Publication of DE3876666D1 publication Critical patent/DE3876666D1/de

1993-04-22 Publication of DE3876666T2 publication Critical patent/DE3876666T2/de

2008-04-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

DE8888105638T 1987-04-09 1988-04-08 Halbleiter-festwertspeichereinrichtung. Expired - Lifetime DE3876666T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62087482A JPS63252481A (ja)	1987-04-09	1987-04-09	不揮発性半導体メモリ

Publications (2)

Publication Number	Publication Date
DE3876666D1 true DE3876666D1 (de)	1993-01-28
DE3876666T2 DE3876666T2 (de)	1993-04-22

Family

ID=13916159

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8888105638T Expired - Lifetime DE3876666T2 (de)	1987-04-09	1988-04-08	Halbleiter-festwertspeichereinrichtung.

Country Status (5)

Country	Link
US (1)	US4930105A (de)
EP (1)	EP0286121B1 (de)
JP (1)	JPS63252481A (de)
KR (1)	KR910007401B1 (de)
DE (1)	DE3876666T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3059442B2 (ja) *	1988-11-09	2000-07-04	株式会社日立製作所	半導体記憶装置
JP2573335B2 (ja) *	1988-11-09	1997-01-22	株式会社東芝	不揮発性メモリ
US5341329A (en) *	1988-12-28	1994-08-23	Kabushiki Kaisha Toshiba	Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method therefor
EP0389693B1 (de) *	1989-03-31	1994-02-16	Koninklijke Philips Electronics N.V.	EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht
JPH0338067A (ja) *	1989-07-05	1991-02-19	Toshiba Corp	不揮発性半導体メモリ装置
US5032881A (en) *	1990-06-29	1991-07-16	National Semiconductor Corporation	Asymmetric virtual ground EPROM cell and fabrication method
JP3002309B2 (ja) *	1990-11-13	2000-01-24	ウエハスケールインテグレーション，インコーポレイテッド	高速ｅｐｒｏｍアレイ
JP3375087B2 (ja) *	1991-10-21	2003-02-10	ローム株式会社	半導体記憶装置およびその記憶情報読出方法
JP3522788B2 (ja) *	1992-10-29	2004-04-26	株式会社ルネサステクノロジ	半導体集積回路装置
US5617352A (en) *	1995-12-13	1997-04-01	The United States Of America As Represented By The Secretary Of The Navy	Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon
US5736891A (en) *	1996-01-11	1998-04-07	International Business Machines Corporation	Discharge circuit in a semiconductor memory
EP0926686A1 (de) *	1997-12-23	1999-06-30	STMicroelectronics S.r.l.	Nichtflüchtiger Seriell-Flash-, EPROM-, EEPROM-, und Flash-EEPROM-Speicher in AMG-Konfiguration
US6480422B1 (en)	2001-06-14	2002-11-12	Multi Level Memory Technology	Contactless flash memory with shared buried diffusion bit line architecture
US8320191B2 (en)	2007-08-30	2012-11-27	Infineon Technologies Ag	Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4258378A (en) *	1978-05-26	1981-03-24	Texas Instruments Incorporated	Electrically alterable floating gate memory with self-aligned low-threshold series enhancement transistor
US4467453A (en) *	1979-09-04	1984-08-21	Texas Instruments Incorporated	Electrically programmable floating gate semiconductor memory device
US4448400A (en) *	1981-07-13	1984-05-15	Eliyahou Harari	Highly scalable dynamic RAM cell with self-signal amplification
JPS60113397A (ja) *	1983-11-24	1985-06-19	Fujitsu Ltd	プログラマブルリ−ドオンリメモリ装置
JPH0760864B2 (ja) *	1984-07-13	1995-06-28	株式会社日立製作所	半導体集積回路装置
JPS61123169A (ja) *	1984-11-20	1986-06-11	Fujitsu Ltd	半導体集積回路
US4698787A (en) *	1984-11-21	1987-10-06	Exel Microelectronics, Inc.	Single transistor electrically programmable memory device and method
EP0183235B1 (de) *	1984-11-26	1993-10-06	Kabushiki Kaisha Toshiba	Nichtflüchtige Halbleiterspeicheranordnung
US4754320A (en) *	1985-02-25	1988-06-28	Kabushiki Kaisha Toshiba	EEPROM with sidewall control gate
JPS61294870A (ja) *	1985-06-21	1986-12-25	Nec Corp	不揮発性半導体記憶装置
US4794565A (en) *	1986-09-15	1988-12-27	The Regents Of The University Of California	Electrically programmable memory device employing source side injection
JPH0777078B2 (ja) *	1987-01-31	1995-08-16	株式会社東芝	不揮発性半導体メモリ
US4788663A (en) *	1987-04-24	1988-11-29	Kabushiki Kaisha Toshiba	Nonvolatile semiconductor memory device with a lightly-doped drain structure

1987
- 1987-04-09 JP JP62087482A patent/JPS63252481A/ja active Pending
1988
- 1988-04-07 US US07/178,609 patent/US4930105A/en not_active Expired - Lifetime
- 1988-04-08 EP EP88105638A patent/EP0286121B1/de not_active Expired - Lifetime
- 1988-04-08 DE DE8888105638T patent/DE3876666T2/de not_active Expired - Lifetime
- 1988-04-08 KR KR1019880003982A patent/KR910007401B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE3876666T2 (de)	1993-04-22
US4930105A (en)	1990-05-29
EP0286121A3 (en)	1989-05-10
EP0286121A2 (de)	1988-10-12
JPS63252481A (ja)	1988-10-19
KR880013174A (ko)	1988-11-30
EP0286121B1 (de)	1992-12-16
KR910007401B1 (ko)	1991-09-25

Legal Events

Date	Code	Title	Description
1994-01-20	8364	No opposition during term of opposition
1994-02-24	8327	Change in the person/name/address of the patent owner	Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T

Publication	Publication Date	Title
DE3875767T2 (de)	1993-03-25	Halbleiter-festwertspeichereinrichtung.
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE3889097T2 (de)	1994-07-28	Halbleiterspeicheranordnung.
DE68923505T2 (de)	1996-02-01	Halbleiterspeicheranordnung.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE68923588T2 (de)	1996-07-04	Halbleiterspeicheranordnung.
DE3787616T2 (de)	1994-03-10	Halbleiterspeicheranordnung.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE3887823T2 (de)	1994-08-11	Halbleiterspeicher.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
DE3876666T2 (de)	1993-04-22	Halbleiter-festwertspeichereinrichtung.
DE3853437D1 (de)	1995-05-04	Halbleiterspeicheranordnung.
DE3883822T2 (de)	1994-02-24	Halbleiterspeichervorrichtung.
DE69023594D1 (de)	1995-12-21	Halbleiterspeicheranordnung.
DE69016577D1 (de)	1995-03-16	Halbleiterspeicheranordnung.
DE69024000T2 (de)	1996-08-01	Halbleiterspeicheranordnung.
DE69023587D1 (de)	1995-12-21	Halbleiterspeicheranordnung.
DE69022508T2 (de)	1996-02-01	Halbleiterspeicheranordnung.
DE69015746T2 (de)	1995-06-01	Halbleiterspeicheranordnung.