DE3877288D1 - Epitaxieanlage. - Google Patents

Epitaxieanlage.

Info

Publication number
DE3877288D1
DE3877288D1 DE8888902452T DE3877288T DE3877288D1 DE 3877288 D1 DE3877288 D1 DE 3877288D1 DE 8888902452 T DE8888902452 T DE 8888902452T DE 3877288 T DE3877288 T DE 3877288T DE 3877288 D1 DE3877288 D1 DE 3877288D1
Authority
DE
Germany
Prior art keywords
susceptor
gas
pref
chamber
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888902452T
Other languages
English (en)
Inventor
Jean-Pierre Dan
Boni Eros De
Peter Frey
Johann Ifanger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sitesa SA
Original Assignee
Sitesa SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sitesa SA filed Critical Sitesa SA
Priority to DE8888902452T priority Critical patent/DE3877288D1/de
Application granted granted Critical
Publication of DE3877288D1 publication Critical patent/DE3877288D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
DE8888902452T 1987-03-10 1988-03-10 Epitaxieanlage. Expired - Fee Related DE3877288D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE8888902452T DE3877288D1 (de) 1987-03-10 1988-03-10 Epitaxieanlage.

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19873707672 DE3707672A1 (de) 1987-03-10 1987-03-10 Epitaxieanlage
DE8888902452T DE3877288D1 (de) 1987-03-10 1988-03-10 Epitaxieanlage.
PCT/EP1988/000188 WO1988007096A2 (fr) 1987-03-10 1988-03-10 Installation d'application de couches epitaxiales

Publications (1)

Publication Number Publication Date
DE3877288D1 true DE3877288D1 (de) 1993-02-18

Family

ID=6322694

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19873707672 Withdrawn DE3707672A1 (de) 1987-03-10 1987-03-10 Epitaxieanlage
DE8888902452T Expired - Fee Related DE3877288D1 (de) 1987-03-10 1988-03-10 Epitaxieanlage.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19873707672 Withdrawn DE3707672A1 (de) 1987-03-10 1987-03-10 Epitaxieanlage

Country Status (6)

Country Link
US (1) US5038711A (de)
EP (2) EP0285840A3 (de)
JP (1) JPH01502512A (de)
AT (1) ATE84325T1 (de)
DE (2) DE3707672A1 (de)
WO (1) WO1988007096A2 (de)

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FR2655773A1 (fr) * 1989-12-08 1991-06-14 Thomson Composants Microondes Dispositif de support de tranches dans un reacteur d'epitaxie vertical.
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DE4106617C2 (de) * 1991-03-01 1994-09-15 Fraunhofer Ges Forschung Reinraum-Handhabungssystem
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DE4407909C3 (de) * 1994-03-09 2003-05-15 Unaxis Deutschland Holding Verfahren und Vorrichtung zum kontinuierlichen oder quasi-kontinuierlichen Beschichten von Brillengläsern
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
US5534309A (en) * 1994-06-21 1996-07-09 Msp Corporation Method and apparatus for depositing particles on surfaces
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
JPH10102257A (ja) * 1996-09-27 1998-04-21 Nippon Process Eng Kk 化学的気相成長法による成膜装置
KR100246963B1 (ko) * 1996-11-22 2000-03-15 윤종용 반도체 제조장치의 웨이퍼 홀더용 스테이지
US5814561A (en) * 1997-02-14 1998-09-29 Jackson; Paul D. Substrate carrier having a streamlined shape and method for thin film formation
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6068703A (en) * 1997-07-11 2000-05-30 Applied Materials, Inc. Gas mixing apparatus and method
US6121156A (en) * 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6129048A (en) * 1998-06-30 2000-10-10 Memc Electronic Materials, Inc. Susceptor for barrel reactor
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6303501B1 (en) * 2000-04-17 2001-10-16 Applied Materials, Inc. Gas mixing apparatus and method
JP3545672B2 (ja) * 2000-04-21 2004-07-21 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20030002070A (ko) * 2001-06-30 2003-01-08 삼성전자 주식회사 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치
US6753506B2 (en) * 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US20040011464A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
ITMI20031841A1 (it) * 2003-09-25 2005-03-26 Lpe Spa Suscettore per reattori epitassiali ad induzione.
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US20090120364A1 (en) * 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP4924395B2 (ja) * 2007-12-07 2012-04-25 東京エレクトロン株式会社 処理装置及び処理方法
US8652259B2 (en) * 2008-10-09 2014-02-18 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US8845809B2 (en) * 2008-10-09 2014-09-30 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
FI123487B (fi) * 2009-06-15 2013-05-31 Beneq Oy Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle
DE102010017896A1 (de) * 2010-04-21 2011-10-27 Ald Vacuum Technologies Gmbh Vorrichtung und Verfahren zum Beschichten von Substraten nach dem EB/PVD-Verfahren
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
WO2016131190A1 (en) 2015-02-17 2016-08-25 Solarcity Corporation Method and system for improving solar cell manufacturing yield
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
DE202015106871U1 (de) 2015-12-16 2017-03-17 Kuka Industries Gmbh Bearbeitungseinrichtung
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN110864810A (zh) * 2019-11-19 2020-03-06 上海华力微电子有限公司 炉管晶舟温度的检测设备及炉管晶舟温度的监控方法
CN114481309B (zh) * 2022-01-29 2024-03-26 江苏天芯微半导体设备有限公司 一种匀流板、进气装置及外延设备

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JPS4930319B1 (de) * 1969-08-29 1974-08-12
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JPS5653768B2 (de) * 1972-05-18 1981-12-21
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
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DE3376432D1 (en) * 1982-01-28 1988-06-01 Toshiba Machine Co Ltd Semiconductor vapor phase growing apparatus
DE3204436A1 (de) * 1982-02-09 1983-08-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zur waermebehandlung von halbleiterscheiben
JPS59207622A (ja) * 1983-05-11 1984-11-24 Furukawa Electric Co Ltd:The 半導体薄膜気相成長装置
EP0147967B1 (de) * 1983-12-09 1992-08-26 Applied Materials, Inc. Induktiv beheitzter Reaktor zur chemischen Abscheidung aus der Dampfphase
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
JPS60153788U (ja) * 1984-03-21 1985-10-14 シャープ株式会社 位置検知センサ付ロボツトハンド
JPS6187319A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd プラズマを用いた化学気相成膜装置
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Also Published As

Publication number Publication date
EP0285840A3 (de) 1988-12-21
ATE84325T1 (de) 1993-01-15
EP0285840A2 (de) 1988-10-12
EP0305461B1 (de) 1993-01-07
WO1988007096A3 (fr) 1988-10-06
EP0305461A1 (de) 1989-03-08
US5038711A (en) 1991-08-13
DE3707672A1 (de) 1988-09-22
JPH01502512A (ja) 1989-08-31
WO1988007096A2 (fr) 1988-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee