DE3881996D1 - Lichtemittierende diode und herstellungsverfahren. - Google Patents
Lichtemittierende diode und herstellungsverfahren.Info
- Publication number
- DE3881996D1 DE3881996D1 DE8888115965T DE3881996T DE3881996D1 DE 3881996 D1 DE3881996 D1 DE 3881996D1 DE 8888115965 T DE8888115965 T DE 8888115965T DE 3881996 T DE3881996 T DE 3881996T DE 3881996 D1 DE3881996 D1 DE 3881996D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- emitting diode
- production method
- production
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24674887 | 1987-09-29 | ||
| JP3920888A JPH0797661B2 (ja) | 1987-09-29 | 1988-02-22 | 発光ダイオードおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3881996D1 true DE3881996D1 (de) | 1993-07-29 |
| DE3881996T2 DE3881996T2 (de) | 1993-10-14 |
Family
ID=26378531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE88115965T Expired - Fee Related DE3881996T2 (de) | 1987-09-29 | 1988-09-28 | Lichtemittierende Diode und Herstellungsverfahren. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4975752A (de) |
| EP (1) | EP0310019B1 (de) |
| JP (1) | JPH0797661B2 (de) |
| DE (1) | DE3881996T2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362973A (en) * | 1990-06-25 | 1994-11-08 | Xerox Corporation | Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth |
| US5252839A (en) * | 1992-06-10 | 1993-10-12 | Hewlett-Packard Company | Superluminescent light-emitting diode with reverse biased absorber |
| US5574304A (en) * | 1992-09-14 | 1996-11-12 | Rohm Co., Ltd. | Superluminescent diode with offset current injection regions |
| EP0712169A1 (de) * | 1994-11-14 | 1996-05-15 | The Whitaker Corporation | Randemittierende Leuchtdiode mit semi-isolierender Schicht |
| US5608234A (en) * | 1994-11-14 | 1997-03-04 | The Whitaker Corporation | Semi-insulating edge emitting light emitting diode |
| US6008066A (en) * | 1996-08-08 | 1999-12-28 | Oki Electric Industry Co., Ltd. | Method of manufacturing a light emitting diode to vary band gap energy of active layer |
| JPH1056200A (ja) * | 1996-08-08 | 1998-02-24 | Oki Electric Ind Co Ltd | 発光ダイオードおよびその製造方法 |
| JP2000252520A (ja) * | 1999-03-03 | 2000-09-14 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US7361406B2 (en) * | 2003-04-29 | 2008-04-22 | Qi Wang | Ultra-high current density thin-film Si diode |
| JP2011124521A (ja) * | 2009-12-14 | 2011-06-23 | Sony Corp | 半導体レーザおよびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121684A (en) * | 1979-03-13 | 1980-09-18 | Fujitsu Ltd | Light semiconductor device |
| JPS5897888A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 半導体レ−ザ |
| JPS59219959A (ja) * | 1983-05-30 | 1984-12-11 | Mitsubishi Electric Corp | 半導体発光受光装置 |
| JPS60187080A (ja) * | 1984-03-07 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
| JPS60235484A (ja) * | 1984-05-09 | 1985-11-22 | Fujitsu Ltd | 半導体発光装置 |
| JPS6214479A (ja) * | 1985-07-12 | 1987-01-23 | Oki Electric Ind Co Ltd | 発光・受光装置 |
| JPS6289389A (ja) * | 1985-10-16 | 1987-04-23 | Nec Corp | 半導体レ−ザ |
| JPS62152185A (ja) * | 1985-12-26 | 1987-07-07 | Fujitsu Ltd | 発光素子 |
-
1988
- 1988-02-22 JP JP3920888A patent/JPH0797661B2/ja not_active Expired - Lifetime
- 1988-09-28 EP EP88115965A patent/EP0310019B1/de not_active Expired - Lifetime
- 1988-09-28 US US07/250,849 patent/US4975752A/en not_active Expired - Lifetime
- 1988-09-28 DE DE88115965T patent/DE3881996T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3881996T2 (de) | 1993-10-14 |
| EP0310019B1 (de) | 1993-06-23 |
| US4975752A (en) | 1990-12-04 |
| JPH0797661B2 (ja) | 1995-10-18 |
| EP0310019A2 (de) | 1989-04-05 |
| JPH01164077A (ja) | 1989-06-28 |
| EP0310019A3 (en) | 1990-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3870419D1 (de) | Halbleiterplaettchen mit lichtemittierender diodenanordnung und herstellungsverfahren. | |
| DE3884986T2 (de) | Lichtführung. | |
| DE3772721D1 (de) | Profilstueck und herstellungsverfahren. | |
| FI904046A0 (fi) | Dragapparat foer att bibehaolla orienteringen i en bruten led. | |
| DE3887840D1 (de) | Superlumineszierende Diode. | |
| DE68921484T2 (de) | Senkkopf-befestigungselement. | |
| DE3874931T2 (de) | Treibriemen und herstellungsverfahren. | |
| DE58904511D1 (de) | Montageverfahren zur herstellung von led-zeilen. | |
| DE3684500D1 (de) | Superlumineszierende lichtemittierende diode und entsprechende methode. | |
| NO872222D0 (no) | Leddet pendel-offshorekonstruksjon. | |
| DE3786346D1 (de) | Riemenscheibe. | |
| DE3881996D1 (de) | Lichtemittierende diode und herstellungsverfahren. | |
| DE3877382D1 (de) | Dekorationsgegenstand und dessen herstellungsverfahren. | |
| FI873194A (fi) | Ledkopplingsmekanism foer foerenande av axlar. | |
| DE3881175T2 (de) | Dekorationsgegenstand und dessen herstellungsverfahren. | |
| NO880428D0 (no) | Strekkbegrenset leddet plattformtaarn. | |
| DE3680297D1 (de) | Verzierungsproduktion. | |
| DE68906088D1 (de) | Kabelschuh und herstellungsverfahren. | |
| DE69000329T2 (de) | Hydroxyfuranon-herstellung. | |
| DE3850176D1 (de) | Verdrahtungsverfahren. | |
| DE3881230T2 (de) | Künstliche Daunen. | |
| DK506988D0 (da) | Kantemitterende, lysemitterende diode | |
| FI890183A0 (fi) | Anordning foer roerelse i en roerformad ledning. | |
| DE3862359D1 (de) | Gliederarmband. | |
| DE3683757D1 (de) | Substratloses zieremblem und dessen herstellungsverfahren. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |