DE3881996T2 - Lichtemittierende Diode und Herstellungsverfahren. - Google Patents

Lichtemittierende Diode und Herstellungsverfahren.

Info

Publication number
DE3881996T2
DE3881996T2 DE88115965T DE3881996T DE3881996T2 DE 3881996 T2 DE3881996 T2 DE 3881996T2 DE 88115965 T DE88115965 T DE 88115965T DE 3881996 T DE3881996 T DE 3881996T DE 3881996 T2 DE3881996 T2 DE 3881996T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting diode
manufacturing process
diode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88115965T
Other languages
English (en)
Other versions
DE3881996D1 (de
Inventor
Yasumasa Oki Electric Kashima
Masao Oki Electric I Kobayashi
Takashi Oki Electric I Tsubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE3881996D1 publication Critical patent/DE3881996D1/de
Application granted granted Critical
Publication of DE3881996T2 publication Critical patent/DE3881996T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
DE88115965T 1987-09-29 1988-09-28 Lichtemittierende Diode und Herstellungsverfahren. Expired - Fee Related DE3881996T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24674887 1987-09-29
JP3920888A JPH0797661B2 (ja) 1987-09-29 1988-02-22 発光ダイオードおよびその製造方法

Publications (2)

Publication Number Publication Date
DE3881996D1 DE3881996D1 (de) 1993-07-29
DE3881996T2 true DE3881996T2 (de) 1993-10-14

Family

ID=26378531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88115965T Expired - Fee Related DE3881996T2 (de) 1987-09-29 1988-09-28 Lichtemittierende Diode und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US4975752A (de)
EP (1) EP0310019B1 (de)
JP (1) JPH0797661B2 (de)
DE (1) DE3881996T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362973A (en) * 1990-06-25 1994-11-08 Xerox Corporation Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
US5574304A (en) * 1992-09-14 1996-11-12 Rohm Co., Ltd. Superluminescent diode with offset current injection regions
EP0712169A1 (de) * 1994-11-14 1996-05-15 The Whitaker Corporation Randemittierende Leuchtdiode mit semi-isolierender Schicht
US5608234A (en) * 1994-11-14 1997-03-04 The Whitaker Corporation Semi-insulating edge emitting light emitting diode
US6008066A (en) * 1996-08-08 1999-12-28 Oki Electric Industry Co., Ltd. Method of manufacturing a light emitting diode to vary band gap energy of active layer
JPH1056200A (ja) * 1996-08-08 1998-02-24 Oki Electric Ind Co Ltd 発光ダイオードおよびその製造方法
JP2000252520A (ja) * 1999-03-03 2000-09-14 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
WO2004100272A1 (en) * 2003-04-29 2004-11-18 Midwest Research Institute Ultra-high current density thin-film si diode
JP2011124521A (ja) * 2009-12-14 2011-06-23 Sony Corp 半導体レーザおよびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121684A (en) * 1979-03-13 1980-09-18 Fujitsu Ltd Light semiconductor device
JPS5897888A (ja) * 1981-12-08 1983-06-10 Nec Corp 半導体レ−ザ
JPS59219959A (ja) * 1983-05-30 1984-12-11 Mitsubishi Electric Corp 半導体発光受光装置
JPS60187080A (ja) * 1984-03-07 1985-09-24 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS60235484A (ja) * 1984-05-09 1985-11-22 Fujitsu Ltd 半導体発光装置
JPS6214479A (ja) * 1985-07-12 1987-01-23 Oki Electric Ind Co Ltd 発光・受光装置
JPS6289389A (ja) * 1985-10-16 1987-04-23 Nec Corp 半導体レ−ザ
JPS62152185A (ja) * 1985-12-26 1987-07-07 Fujitsu Ltd 発光素子

Also Published As

Publication number Publication date
EP0310019B1 (de) 1993-06-23
DE3881996D1 (de) 1993-07-29
EP0310019A3 (en) 1990-08-16
EP0310019A2 (de) 1989-04-05
JPH01164077A (ja) 1989-06-28
US4975752A (en) 1990-12-04
JPH0797661B2 (ja) 1995-10-18

Similar Documents

Publication Publication Date Title
DE68925634T2 (de) Lichtemittierendes Element
DE3884986D1 (de) Lichtführung.
DE68913877T2 (de) Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.
DE3870419D1 (de) Halbleiterplaettchen mit lichtemittierender diodenanordnung und herstellungsverfahren.
DE69007355T2 (de) Chemilumineszentes Lichtelement.
DE3853524T2 (de) Kleinstlampe mit farbveränderlichen Lichteffekten.
DE68910767D1 (de) Anordnung von lichtemittierenden Dioden.
DE68914414D1 (de) Lichtquelle.
KR900012393A (ko) 발광소자
DE69002846T2 (de) Lichtemittierende Diamantanordnung.
DE3881996T2 (de) Lichtemittierende Diode und Herstellungsverfahren.
DK27687A (da) Lysudsendende indretning
DE3887790D1 (de) Lichtemittierende Halbleitervorrichtung.
DE69017301D1 (de) Halbleiter lichtemittierende Vorrichtung.
DE3888575D1 (de) Lichtemittierende Vorrichtung.
DE3789713D1 (de) Halbleiter-Lichtemissionsvorrichtung.
DE3772168D1 (de) Lichtaussendende halbleitervorrichtung.
DE3860929D1 (de) Herstellung von dioden.
KR900011054A (ko) 발광다이오드 및 제조방법
DK506988D0 (da) Kantemitterende, lysemitterende diode
KR900003793U (ko) 발광 다이오드 어레이
KR900011056A (ko) 발광다이오드
IT8722861A0 (it) Pendaglio luminoso.
ES1003950Y (es) Caja-panel luminosa.
GB8807134D0 (en) Light emitting element & manufacturing method thereof

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee