DE3883425D1 - Ortung und Prüfung von in Betracht kommenden Flächen auf einem Werkstück. - Google Patents

Ortung und Prüfung von in Betracht kommenden Flächen auf einem Werkstück.

Info

Publication number
DE3883425D1
DE3883425D1 DE88304226T DE3883425T DE3883425D1 DE 3883425 D1 DE3883425 D1 DE 3883425D1 DE 88304226 T DE88304226 T DE 88304226T DE 3883425 T DE3883425 T DE 3883425T DE 3883425 D1 DE3883425 D1 DE 3883425D1
Authority
DE
Germany
Prior art keywords
question
workpiece
locating
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88304226T
Other languages
English (en)
Other versions
DE3883425T2 (de
Inventor
John Schuur
David L Willenborg
Michael W Taylor
Allan Rosencwaig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Therma Wave Inc
Original Assignee
Therma Wave Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Therma Wave Inc filed Critical Therma Wave Inc
Application granted granted Critical
Publication of DE3883425D1 publication Critical patent/DE3883425D1/de
Publication of DE3883425T2 publication Critical patent/DE3883425T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/178Methods for obtaining spatial resolution of the property being measured
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N2021/555Measuring total reflection power, i.e. scattering and specular
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
    • G01N2021/8867Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
DE88304226T 1987-05-15 1988-05-10 Ortung und Prüfung von in Betracht kommenden Flächen auf einem Werkstück. Expired - Fee Related DE3883425T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/050,911 US4795260A (en) 1987-05-15 1987-05-15 Apparatus for locating and testing areas of interest on a workpiece

Publications (2)

Publication Number Publication Date
DE3883425D1 true DE3883425D1 (de) 1993-09-30
DE3883425T2 DE3883425T2 (de) 1994-03-24

Family

ID=21968258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88304226T Expired - Fee Related DE3883425T2 (de) 1987-05-15 1988-05-10 Ortung und Prüfung von in Betracht kommenden Flächen auf einem Werkstück.

Country Status (4)

Country Link
US (1) US4795260A (de)
EP (1) EP0291276B1 (de)
JP (1) JPH07109848B2 (de)
DE (1) DE3883425T2 (de)

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DE4035266C2 (de) * 1990-11-02 1995-11-16 Jenoptik Jena Gmbh Verfahren und Anordnung zur Thermowellenanalyse
JP2833908B2 (ja) * 1992-03-04 1998-12-09 山形日本電気株式会社 露光装置における位置決め装置
DE4223337C2 (de) * 1992-07-16 1996-02-22 Jenoptik Jena Gmbh Verfahren und Anordnung zur photothermischen Spektroskopie
DE4231214C2 (de) * 1992-09-18 1994-12-08 Kernforschungsz Karlsruhe Photothermischer Sensor
US5401972A (en) * 1993-09-02 1995-03-28 Schlumberger Technologies, Inc. Layout overlay for FIB operations
US5574562A (en) * 1994-12-19 1996-11-12 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for evaluation of high temperature superconductors
US6008906A (en) 1995-08-25 1999-12-28 Brown University Research Foundation Optical method for the characterization of the electrical properties of semiconductors and insulating films
US5706094A (en) * 1995-08-25 1998-01-06 Brown University Research Foundation Ultrafast optical technique for the characterization of altered materials
US6067163A (en) * 1995-10-31 2000-05-23 Texas Instruments Incorporated Automated substrate pattern recognition system
US6175416B1 (en) 1996-08-06 2001-01-16 Brown University Research Foundation Optical stress generator and detector
US5748318A (en) * 1996-01-23 1998-05-05 Brown University Research Foundation Optical stress generator and detector
US6321601B1 (en) 1996-08-06 2001-11-27 Brown University Research Foundation Optical method for the characterization of laterally-patterned samples in integrated circuits
US5844684A (en) * 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
US5748317A (en) * 1997-01-21 1998-05-05 Brown University Research Foundation Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector
US5978074A (en) 1997-07-03 1999-11-02 Therma-Wave, Inc. Apparatus for evaluating metalized layers on semiconductors
US5864393A (en) * 1997-07-30 1999-01-26 Brown University Research Foundation Optical method for the determination of stress in thin films
DE19746575A1 (de) * 1997-10-22 1999-04-29 Zeiss Carl Fa Optische Bildaufnahmeeinrichtung und Verfahren zu deren Nutzung
US6885444B2 (en) * 1998-06-10 2005-04-26 Boxer Cross Inc Evaluating a multi-layered structure for voids
US6049220A (en) 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
US6038026A (en) * 1998-07-07 2000-03-14 Brown University Research Foundation Apparatus and method for the determination of grain size in thin films
US6025918A (en) * 1998-07-07 2000-02-15 Brown University Research Foundation Apparatus and method for measurement of the mechanical properties and electromigration of thin films
US6094275A (en) * 1999-08-03 2000-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for measuring optical properties of a coating layer
US6317216B1 (en) 1999-12-13 2001-11-13 Brown University Research Foundation Optical method for the determination of grain orientation in films
US6469518B1 (en) * 2000-01-07 2002-10-22 Advanced Micro Devices, Inc. Method and apparatus for determining measurement frequency based on hardware age and usage
US6812047B1 (en) 2000-03-08 2004-11-02 Boxer Cross, Inc. Evaluating a geometric or material property of a multilayered structure
US6603543B1 (en) 2001-02-01 2003-08-05 Advanced Micro Devices, Inc. Inspection system with enhanced contrast
US6608321B1 (en) * 2001-02-01 2003-08-19 Advanced Micro Devices, Inc. Differential wavelength inspection system
US6911349B2 (en) * 2001-02-16 2005-06-28 Boxer Cross Inc. Evaluating sidewall coverage in a semiconductor wafer
US6812717B2 (en) * 2001-03-05 2004-11-02 Boxer Cross, Inc Use of a coefficient of a power curve to evaluate a semiconductor wafer
US6971791B2 (en) * 2002-03-01 2005-12-06 Boxer Cross, Inc Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough
US6958814B2 (en) * 2002-03-01 2005-10-25 Applied Materials, Inc. Apparatus and method for measuring a property of a layer in a multilayered structure
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6963393B2 (en) * 2002-09-23 2005-11-08 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
JP4316853B2 (ja) 2002-10-09 2009-08-19 株式会社トプコン 表面検査方法および装置
KR100538092B1 (ko) * 2003-02-27 2005-12-21 삼성전자주식회사 불순물 농도의 수직 분포 모니터링 방법 및 장치
KR100524211B1 (ko) * 2003-02-28 2005-10-26 삼성전자주식회사 반도체 소자 제조과정에서의 박막의 불순물 농도 측정방법및 제어방법
US20040253751A1 (en) * 2003-06-16 2004-12-16 Alex Salnik Photothermal ultra-shallow junction monitoring system with UV pump
US7026175B2 (en) * 2004-03-29 2006-04-11 Applied Materials, Inc. High throughput measurement of via defects in interconnects
US7379185B2 (en) 2004-11-01 2008-05-27 Applied Materials, Inc. Evaluation of openings in a dielectric layer
US7499168B2 (en) * 2006-02-14 2009-03-03 Kla-Tencor Corp. Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
JP2007288135A (ja) * 2006-03-20 2007-11-01 Kobe Steel Ltd シリコン半導体薄膜の結晶性評価装置及び方法
US7502104B2 (en) * 2006-08-10 2009-03-10 Kla-Tencor Corporation Probe beam profile modulated optical reflectance system and methods
JP2009014510A (ja) * 2007-07-04 2009-01-22 Hitachi High-Technologies Corp 検査方法及び検査装置
DE102007047933B3 (de) * 2007-12-20 2009-02-26 Vistec Semiconductor Systems Gmbh Verfahren zur Inspektion von einer Oberfläche eines Wafers mit Bereichen unterschiedlicher Detektionsempfindlichkeit
US7920265B1 (en) * 2008-07-29 2011-04-05 Kla-Tencor Corporation Apparatus and method for noise reduction in modulated optical reflectance metrology system
FR2974183B1 (fr) 2011-04-13 2013-12-13 Proton World Int Nv Dispositif de perturbation du fonctionnement d'un circuit integre.
US20140009762A1 (en) * 2012-06-21 2014-01-09 Nikon Corporation Measurement assembly with fiber optic array
US9772297B2 (en) * 2014-02-12 2017-09-26 Kla-Tencor Corporation Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
WO2016100492A1 (en) 2014-12-16 2016-06-23 The Procter & Gamble Company Coated microcapsules
CN107249545B (zh) 2014-12-16 2021-05-25 诺赛尔股份有限公司 提供活性物质的延迟释放的组合物
EP3233267B1 (de) 2014-12-16 2021-06-02 Noxell Corporation Überzogene mikrokapseln
CN106999896B (zh) 2014-12-16 2020-10-30 诺赛尔股份有限公司 包衣微胶囊
US9944886B2 (en) 2014-12-16 2018-04-17 Noxell Corporation Coated microcapsules
WO2017222670A1 (en) * 2016-06-22 2017-12-28 University Of Virginia Patent Foundation Fiber-optic based material property measurement system and related methods
US10928311B2 (en) * 2018-04-17 2021-02-23 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Rapid multiplexed infrared 3D nano-tomography
KR102506803B1 (ko) * 2018-11-23 2023-03-07 삼성전자주식회사 배선 기판 테스트 방법 및 이를 수행하기 위한 장치
DE102021127596A1 (de) 2021-10-22 2023-04-27 Linseis Messgeräte Gesellschaft mit beschränkter Haftung Temperaturleitfähigkeitsmessgerät

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JPS55107942A (en) * 1979-02-13 1980-08-19 Matsushita Electric Works Ltd Inspecting method of plate
JPS568531A (en) * 1979-03-15 1981-01-28 Matsushita Electric Works Ltd Test method of artificial precious wood
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JPS5972134A (ja) * 1982-10-18 1984-04-24 Hitachi Ltd パタ−ン検出装置
JPS59201435A (ja) * 1983-04-28 1984-11-15 Toshiba Corp エツチングパタ−ン検査方法
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US4591272A (en) * 1983-12-27 1986-05-27 Board Of Regents Acting On Behalf Of University Of Michigan Photothermal deflection densitometer for thin layer chromatography
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Also Published As

Publication number Publication date
EP0291276A2 (de) 1988-11-17
US4795260A (en) 1989-01-03
EP0291276B1 (de) 1993-08-25
JPS642332A (en) 1989-01-06
DE3883425T2 (de) 1994-03-24
EP0291276A3 (en) 1990-05-30
JPH07109848B2 (ja) 1995-11-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee