DE3888184D1 - Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich. - Google Patents

Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich.

Info

Publication number
DE3888184D1
DE3888184D1 DE88119094T DE3888184T DE3888184D1 DE 3888184 D1 DE3888184 D1 DE 3888184D1 DE 88119094 T DE88119094 T DE 88119094T DE 3888184 T DE3888184 T DE 3888184T DE 3888184 D1 DE3888184 D1 DE 3888184D1
Authority
DE
Germany
Prior art keywords
masks
structures
production
submicrometer range
submicrometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88119094T
Other languages
English (en)
Inventor
Otto Dr Koblinger
Klaus Dipl Phys Meissner
Reinhold Muehl
Hans-Joachim Dr Dipl Ph Trumpp
Werner Dr Dipl Phys Zapka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3888184D1 publication Critical patent/DE3888184D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE88119094T 1988-11-17 1988-11-17 Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich. Expired - Fee Related DE3888184D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88119094A EP0369053B1 (de) 1988-11-17 1988-11-17 Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich

Publications (1)

Publication Number Publication Date
DE3888184D1 true DE3888184D1 (de) 1994-04-07

Family

ID=8199575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88119094T Expired - Fee Related DE3888184D1 (de) 1988-11-17 1988-11-17 Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich.

Country Status (4)

Country Link
US (1) US5055383A (de)
EP (1) EP0369053B1 (de)
JP (1) JPH0827533B2 (de)
DE (1) DE3888184D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1248534B (it) * 1991-06-24 1995-01-19 Sgs Thomson Microelectronics Procedimento per la realizzazione di strutture di calibrazione particolarmente per la taratura di macchine di misura del disallineamento in circuiti integrati in genere.
KR940010315B1 (ko) * 1991-10-10 1994-10-22 금성 일렉트론 주식회사 반도체 소자의 미세 패턴 형성 방법
US5348619A (en) * 1992-09-03 1994-09-20 Texas Instruments Incorporated Metal selective polymer removal
US6139483A (en) * 1993-07-27 2000-10-31 Texas Instruments Incorporated Method of forming lateral resonant tunneling devices
KR100303279B1 (ko) * 1994-08-27 2001-12-01 윤종용 반도체레이저다이오드와그제조방법
US5652163A (en) * 1994-12-13 1997-07-29 Lsi Logic Corporation Use of reticle stitching to provide design flexibility
AU3222397A (en) 1996-06-10 1998-01-07 Holographic Lithography Systems Process for modulating interferometric lithography patterns to record selected discrete patterns in photoresist
US6088505A (en) * 1996-06-10 2000-07-11 Holographic Lithography Systems, Inc. Holographic patterning method and tool for production environments
CA2233096C (en) 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
US6077560A (en) * 1997-12-29 2000-06-20 3M Innovative Properties Company Method for continuous and maskless patterning of structured substrates
TW460758B (en) 1998-05-14 2001-10-21 Holographic Lithography System A holographic lithography system for generating an interference pattern suitable for selectively exposing a photosensitive material
US6744909B1 (en) 1999-08-19 2004-06-01 Physical Optics Corporation Authentication system and method
US7167615B1 (en) 1999-11-05 2007-01-23 Board Of Regents, The University Of Texas System Resonant waveguide-grating filters and sensors and methods for making and using same
US6255147B1 (en) * 2000-01-31 2001-07-03 Advanced Micro Devices, Inc. Silicon on insulator circuit structure with extra narrow field transistors and method of forming same
US6790782B1 (en) 2001-12-28 2004-09-14 Advanced Micro Devices, Inc. Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal
US20030173648A1 (en) * 2002-03-16 2003-09-18 Sniegowski Jeffry Joseph Multi-die chip and method for making the same
US6579809B1 (en) 2002-05-16 2003-06-17 Advanced Micro Devices, Inc. In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric
US6982135B2 (en) 2003-03-28 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern compensation for stitching
US6835262B1 (en) * 2003-06-19 2004-12-28 Northrop Grumman Corporation Positive pressure hot bonder
KR100710200B1 (ko) * 2005-06-27 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
DE102013212173B4 (de) * 2013-06-26 2016-06-02 Robert Bosch Gmbh MEMS-Bauelement mit einer auslenkbaren Membran und einem feststehenden Gegenelement sowie Verfahren zu dessen Herstellung
US10049875B2 (en) * 2016-03-04 2018-08-14 Tokyo Electron Limited Trim method for patterning during various stages of an integration scheme

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130926C (de) * 1959-09-04
US3700433A (en) * 1971-07-12 1972-10-24 United Aircraft Corp Enhancement of transverse properties of directionally solidified superalloys
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4354896A (en) * 1980-08-05 1982-10-19 Texas Instruments Incorporated Formation of submicron substrate element
US4331708A (en) * 1980-11-04 1982-05-25 Texas Instruments Incorporated Method of fabricating narrow deep grooves in silicon
US4397937A (en) * 1982-02-10 1983-08-09 International Business Machines Corporation Positive resist compositions
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
US4648937A (en) * 1985-10-30 1987-03-10 International Business Machines Corporation Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
US4654119A (en) * 1985-11-18 1987-03-31 International Business Machines Corporation Method for making submicron mask openings using sidewall and lift-off techniques
EP0280587A1 (de) * 1987-01-20 1988-08-31 Thomson Components-Mostek Corporation VLSI-Verfahren unter Verwendung einer Maske mit Distanzstücken

Also Published As

Publication number Publication date
JPH02251849A (ja) 1990-10-09
JPH0827533B2 (ja) 1996-03-21
EP0369053B1 (de) 1994-03-02
US5055383A (en) 1991-10-08
EP0369053A1 (de) 1990-05-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee