DE4232745A1 - Wire for ultrasonic bonding - has wire of ductile metal such as gold or copper coated with thin layer of harder material - Google Patents

Wire for ultrasonic bonding - has wire of ductile metal such as gold or copper coated with thin layer of harder material

Info

Publication number
DE4232745A1
DE4232745A1 DE4232745A DE4232745A DE4232745A1 DE 4232745 A1 DE4232745 A1 DE 4232745A1 DE 4232745 A DE4232745 A DE 4232745A DE 4232745 A DE4232745 A DE 4232745A DE 4232745 A1 DE4232745 A1 DE 4232745A1
Authority
DE
Germany
Prior art keywords
wire
coated
bond
bonding
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4232745A
Other languages
German (de)
Other versions
DE4232745C2 (en
Inventor
Gerhard Prof Dr Ing Blasek
Uwe Dipl Ing Buergel
Frank Dr Ing Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Dresden
Original Assignee
Technische Universitaet Dresden
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Dresden filed Critical Technische Universitaet Dresden
Priority to DE4232745A priority Critical patent/DE4232745C2/en
Publication of DE4232745A1 publication Critical patent/DE4232745A1/en
Application granted granted Critical
Publication of DE4232745C2 publication Critical patent/DE4232745C2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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    • H01B1/026—Alloys based on copper
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Abstract

A wire made from a ductile metal like gold or copper with a low yield point is used for ultrasonic bonding. The wire is coated with a thin layer of material which is hard compared with the wire. The layer is between 5 and 100 nanometres thick, and it forms a brittle oxide layer in air, or with the aid of additional oxidation means. As an example, the coating layer can be aluminium or nickel or tin. Alternatively, hard material can be embedded in it. The layer may be diffused into the wire to give a hard crystalline solid solution as an outer surface. ADVANTAGE Ultrasonic bonding can be carried out at room temperature.

Description

Die Erfindung betrifft einen Bonddraht bzw. ein Bändchen (im folgenden Bonddraht) aus einem duktilen Material mit niedriger Fließgrenze, wie insbesondere Gold und Kupfer, zum Ultraschallbonden bei Temperaturen unter 150°C, vorzugsweise bei Raumtemperatur.The invention relates to a bond wire or a ribbon (in following bond wire) made of a ductile material with lower Yield point, such as gold and copper in particular, at Ultrasonic bonding at temperatures below 150 ° C, preferably at room temperature.

Bonddrähte aus Gold oder Kupfer werden üblicherweise durch Thermosonic-Drahtbonden bei Temperaturen zwischen 150 und 350°C verarbeitet. Niedrigere Verarbeitungstemperaturen führen zu verschlechteter Verfahrenszuverlässigkeit.Bond wires made of gold or copper are usually made by Thermosonic wire bonding at temperatures between 150 and Processed at 350 ° C. Lower processing temperatures result deteriorated process reliability.

Abgesehen von dem erhöhten Aufwand zur Vorwärmung der Bauelemente und für beheizte Werkzeuge ist die untere Temperaturgrenze von 150°C für einige Bauelemente und schon vorhandene Kontaktierungen zu hoch.Apart from the increased effort for preheating the Components and for heated tools is the lower one Temperature limit of 150 ° C for some components and already existing contacts too high.

Es ist bekannt, daß der Zustand der Oberflächen der Bondpartner einen großen Einfluß auf das Bondergebnis besitzt. Entsprechend hoch sind die Anforderungen an die Reinheit der Oberflächen.It is known that the condition of the surfaces of the Bond partner has a great influence on the bond result. The purity requirements are correspondingly high Surfaces.

Aufgabe der Erfindung ist es, die Zuverlässigkeit des Ultraschalldrahtbondens mit Bonddrähten aus einem duktilen Material mit niedriger Fließgrenze, wie insbesondere Gold und Kupfer, bei Temperaturen unter 150°C so zu erhöhen, daß die Bauelemente auch z. B. bei Raumtemperatur sicher gebondet werden können.The object of the invention is to improve the reliability of the Ultrasonic wire bonding with bond wires from a ductile Low yield material such as gold and Copper, at temperatures below 150 ° C so that the Components also z. B. securely bonded at room temperature can be.

Es wurde gefunden, daß eine erhöhte Verfahrenszuverlässigkeit bei Bondtemperaturen unter 150 °C erreicht wird, wenn die Bonddrähte vor dem Ultraschallbonden mit einem dünnen Mantel aus einem gegenüber dem Drahtmaterial harten bis spröden Material überzogen wurden. Mit derart vorbereiteten Bonddrähten kann auch bei Raumtemperatur zuverlässig gebondet werden. It has been found that increased process reliability at bond temperatures below 150 ° C is reached when the Bond wires before ultrasound bonding with a thin sheath from a hard to brittle compared to the wire material Material were covered. With such prepared Bond wires can also be reliably bonded at room temperature become.  

Mit reinem Goldmikrodraht wurden durch Ultraschall-Keilbonden bei Raumtemperatur und mit optimierten Bondparametern auf goldmetallisierte Pads Verbindungen hergestellt, deren im Abreißtest ermittelte mittlere Abreißkraft etwa 50% der Reißkraft des Drahtes betrug. Demgegenüber wurden für unter gleichen Bedingungen hergestellte Verbindungen aus Goldmikrodraht mit einer Aluminium/Aluminiumoxid-Schicht von 50 nm Dicke eine mittlere Abreißkraft von etwa 80% der Reißkraft des Drahtes ermittelt.With pure gold micro wire were ultrasonically wedge bonded at room temperature and with optimized bond parameters Gold metallized pads made connections, whose im Tear test determined average tear force about 50% of the Tensile strength of the wire was. In contrast, for under equal conditions made connections Gold micro wire with an aluminum / aluminum oxide layer from 50 nm thickness an average tear strength of about 80% of the Tensile strength of the wire determined.

Die Schicht schützt das Drahtmaterial bis zur Bindung vor Kontaminationen bzw. bei Kupfer vor Oxidation. Sie bricht bei der Drahtdeformation im Bondprozeß auf. Die eigentliche Bindung findet zwischen dem Drahtmaterial und der Pad- Metallisierung statt.The layer protects the wire material up to the bond Contamination or in the case of copper before oxidation. It breaks the wire deformation in the bonding process. The real one Binding takes place between the wire material and the pad Metallization instead.

Auch in den Fällen, wo mit ersten Testbeschichtungen noch keine wesentliche Verbesserung der mittleren Abreißkraft erreicht wurde, verringerte sich die Streuung der Abreißkräfte signifikant, und es konnte mit geringerer Energie und damit geringerer mechanische Belastung des Drahtes gebondet werden. Die vergleichweise geringe Drahtdeformation, die zur Ausbildung der Bindung nötig ist, führt wegen der geringeren Kerbwirkungen des Bondwerkzeuges zur Verbesserung der Gesamtfestigkeit der Verbindung und erhöhter Verfahrenszuverlässigkeit. Der Anteil der im Abreißtest durch Drahtriß ausgefallenen Bondverbindungen stieg gegenüber dem der durch Abheben ausgefallenen von 50 : 50 auf bis zu 84 : 14 deutlich an.Even in cases where the first test coatings are still available no significant improvement in the average tear-off force reached, the spread of the tear-off forces decreased significant, and it could use less energy and therefore less mechanical stress on the wire can be bonded. The comparatively low wire deformation, which leads to Training the bond is necessary, because of the lower leads Notch effects of the bonding tool to improve the Total strength of the connection and increased Process reliability. The percentage of in the tear test Faulty wire bonds rose compared to that those that failed to take off from 50:50 up to 84:14 clearly.

Die Technologien zur Ummantelung des Bonddrahtes mit den genannten Materialien sind grundsätzlich bekannt. Die Materialschichten können zum Beispiel aufgedampft, aufgesputtert oder galvanisch abgeschieden werden. The technologies for sheathing the bond wire with the materials mentioned are generally known. The Material layers can, for example, be evaporated, sputtered or galvanically deposited.  

Die Erfindung wird nachfolgend in mehreren Ausführungs­ beispielen dargestellt.The invention is described in several embodiments below shown examples.

Getestet wurden in je 50 Bondversuchen mit Ultraschall (US) bei jeweils gleichen Bondparametern:The tests were carried out in 50 bond tests with ultrasound (US) with the same bond parameters:

  • 1. Ein 30 µm dicker Golddraht aus 99,99% Gold mit einer Reißkraft von 13,5 cN und einer Dehnung von 6-8% (Draht 1).1. A 30 µm thick gold wire made of 99.99% gold with a Tensile strength of 13.5 cN and an elongation of 6-8% (Wire 1).
  • 2. Ein Draht 1, auf dem eine 50 nm dicke Aluminiumschicht aufgesputtert und der an Luft oxidiert war (Draht 2).2. A wire 1 on which a 50 nm thick aluminum layer sputtered on and oxidized in air (wire 2).
  • 3. Ein Draht 1, der mit einer 200 nm dicken Zinnschicht überzogen und 24 h bei 155°C getempert war (Draht 3).3. A wire 1 made with a 200 nm thick layer of tin was coated and annealed at 155 ° C for 24 h (wire 3).
  • 4. Ein Draht 1, auf dem eine 50 nm dicke Nickelschicht galvanisch abgeschieden war (Draht 4). 4. A wire 1 on which a 50 nm thick nickel layer was electrodeposited (wire 4).

Langzeituntersuchungen von Verbindungen mit dem Draht 2 bei trockener Wärme (155°C) bis zu 1200 h zeigten keine Veränderungen des anfänglichen Kontaktwiderstandes von 9 mOhm. Es kann angenommen werden, daß sich offensichtlich kein Aluminium aus der dünnen Mantelschicht des Bonddrahtes in die Verbindungsschicht einlagert und sich keine intermetallischen Phasen bilden, sonst hätte der Kontaktwiderstand ansteigen müssen.Long-term investigations of connections with the wire 2 at dry heat (155 ° C) up to 1200 h showed none Changes in initial contact resistance of 9 mOhm. It can be assumed that obviously none Aluminum from the thin sheath of the bond wire into the Link layer and no intermetallic Form phases, otherwise the contact resistance would increase have to.

Claims (9)

1. Bonddraht aus einem duktilen Material mit niedriger Fließgrenze, wie insbesondere Gold und Kupfer, zum Ultraschallbonden, gekennzeichnet dadurch, daß der Draht mit einem dünnen Mantel aus einem gegenüber dem Material des Bonddrahtes harten Material überzogen ist.1. Bonding wire made of a ductile material with a low yield point, such as in particular gold and copper, for ultrasonic bonding, characterized in that the wire is coated with a thin sheath made of a material which is hard with respect to the material of the bonding wire. 2. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß die Mantelschicht 5 bis 100 nm dick ist.2. Bonding wire according to claim 1, characterized in that the Cladding layer is 5 to 100 nm thick. 3. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß der Mantel aus einem Material besteht, das an Luft oder durch zusätzliche Oxidationsmittel eine spröde Oxydschicht bildet.3. Bonding wire according to claim 1, characterized in that the Jacket made of a material that is in air or through additional oxidizing agent a brittle oxide layer forms. 4. Bonddraht nach Anspruch 3, gekennzeichnet dadurch, daß der Bonddraht mit Aluminium ummantelt ist.4. Bond wire according to claim 3, characterized in that the Bond wire is coated with aluminum. 5. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß der Bonddraht mit Nickel ummantelt ist.5. Bonding wire according to claim 1, characterized in that the Bond wire is coated with nickel. 6. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß in die Mantelschicht Hartstoffe eingelagert sind.6. Bonding wire according to claim 1, characterized in that in the cladding layer of hard materials are embedded. 7. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß der Bonddraht mit einem Material ummantelt ist, das mit dem Drahtmaterial bzw. einer auf dem Draht aufgebrachten Schicht eine harte intermetallische Verbindungen bildet.7. Bonding wire according to claim 1, characterized in that the Bond wire is coated with a material that with the Wire material or one applied to the wire Layer forms a hard intermetallic compound. 8. Bonddraht nach Anspruch 7, gekennzeichnet dadurch, daß der Bonddraht mit Zinn ummantelt ist.8. Bonding wire according to claim 7, characterized in that the Bond wire is coated with tin. 9. Bonddraht nach Anspruch 1, gekennzeichnet dadurch, daß der Bonddraht mit einem Material beschichtet ist, das in den Draht diffundiert und in der Oberfläche harte Mischkristalle bildet.9. bonding wire according to claim 1, characterized in that the Bond wire is coated with a material that in the Wire diffuses and hard on the surface Mixed crystals forms.
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US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
EP1198001A2 (en) * 1994-11-15 2002-04-17 Formfactor, Inc. Method of testing and mounting devices using a resilient contact structure
EP1266715A1 (en) * 2001-06-14 2002-12-18 Agilent Technologies, Inc. (a Delaware corporation) Gold wire bonding at room temperature
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
WO2004100258A2 (en) * 2003-05-02 2004-11-18 Orthodyne Electronics Corporation Ribbon bonding
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US7225538B2 (en) 1993-11-16 2007-06-05 Formfactor, Inc. Resilient contact structures formed and then attached to a substrate
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
EP1198001A2 (en) * 1994-11-15 2002-04-17 Formfactor, Inc. Method of testing and mounting devices using a resilient contact structure
EP1198001A3 (en) * 1994-11-15 2008-07-23 FormFactor, Inc. Method of testing and mounting devices using a resilient contact structure
EP0792517A1 (en) * 1994-11-15 1997-09-03 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP1266715A1 (en) * 2001-06-14 2002-12-18 Agilent Technologies, Inc. (a Delaware corporation) Gold wire bonding at room temperature
US6698646B2 (en) 2001-06-14 2004-03-02 Agilent Technologies, Inc. Room temperature gold wire bonding
WO2004100258A3 (en) * 2003-05-02 2006-02-23 Orthodyne Electronics Corp Ribbon bonding
WO2004100258A2 (en) * 2003-05-02 2004-11-18 Orthodyne Electronics Corporation Ribbon bonding
US8685789B2 (en) 2003-05-02 2014-04-01 Orthodyne Electronics Corporation Ribbon bonding in an electronic package
US8685791B2 (en) 2003-05-02 2014-04-01 Orthodyne Electronics Corporation Ribbon bonding in an electronic package
EP1925037A1 (en) * 2005-09-13 2008-05-28 Showa Denko Kabushiki Kaisha Light-emitting device
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WO2008080467A1 (en) * 2006-12-20 2008-07-10 Micro Systems Engineering Gmbh Connection wire, method for producing such a wire, and structural component
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