DE502005010017D1 - Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen - Google Patents

Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen

Info

Publication number
DE502005010017D1
DE502005010017D1 DE502005010017T DE502005010017T DE502005010017D1 DE 502005010017 D1 DE502005010017 D1 DE 502005010017D1 DE 502005010017 T DE502005010017 T DE 502005010017T DE 502005010017 T DE502005010017 T DE 502005010017T DE 502005010017 D1 DE502005010017 D1 DE 502005010017D1
Authority
DE
Germany
Prior art keywords
group iii
iii nitride
crystal layers
metal melts
producing group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE502005010017T
Other languages
English (en)
Inventor
Jochen Friedrich
Georg Mueller
Rainer Apelt
Elke Meissner
Bernhard Birkmann
Stephan Hussy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of DE502005010017D1 publication Critical patent/DE502005010017D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
DE502005010017T 2004-10-05 2005-10-04 Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen Active DE502005010017D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004048454A DE102004048454B4 (de) 2004-10-05 2004-10-05 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
PCT/DE2005/001771 WO2006037310A1 (de) 2004-10-05 2005-10-04 Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen

Publications (1)

Publication Number Publication Date
DE502005010017D1 true DE502005010017D1 (de) 2010-09-09

Family

ID=35500909

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004048454A Expired - Fee Related DE102004048454B4 (de) 2004-10-05 2004-10-05 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
DE502005010017T Active DE502005010017D1 (de) 2004-10-05 2005-10-04 Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004048454A Expired - Fee Related DE102004048454B4 (de) 2004-10-05 2004-10-05 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen

Country Status (5)

Country Link
US (1) US8728233B2 (de)
EP (1) EP1805354B1 (de)
JP (1) JP2008515755A (de)
DE (2) DE102004048454B4 (de)
WO (1) WO2006037310A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015417B2 (ja) * 2004-06-09 2012-08-29 住友電気工業株式会社 ＧａＮ結晶の製造方法
DE102004048454B4 (de) 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
DE102004048453A1 (de) 2004-10-05 2006-04-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze
JP4861953B2 (ja) * 2007-10-12 2012-01-25 日本碍子株式会社 窒化物単結晶の製造方法
WO2009052770A1 (de) * 2007-10-23 2009-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur reduzierung von makrodefekten bei der herstellung von einkristallen oder einkristallinen schichten

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US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
US3591340A (en) * 1968-07-11 1971-07-06 Ibm Method for preparing high purity crystalline semiconductive materials in bulk
US3811963A (en) 1973-02-20 1974-05-21 Rca Corp Method of epitaxially depositing gallium nitride from the liquid phase
US5185288A (en) * 1988-08-26 1993-02-09 Hewlett-Packard Company Epitaxial growth method
JPH0696448B2 (ja) 1991-11-29 1994-11-30 科学技術庁無機材質研究所長 炭窒化ほう素の合成法
DE69419636T2 (de) 1993-03-16 2000-02-10 Ykk Corp Verfahren zur Herstellung von ultrafeinen Kompositpartikeln aus Aluminiumnitrid und Seltenerdnitrid
PL173917B1 (pl) 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
JPH09134878A (ja) 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6214108B1 (en) * 1998-05-19 2001-04-10 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same
EP0996145A3 (de) * 1998-09-04 2000-11-08 Canon Kabushiki Kaisha Verfahren zur Herstellung von Halbleitersubstraten
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
DE19929591A1 (de) 1999-06-28 2001-01-04 Max Planck Gesellschaft Herstellung von epitaktischen GaN-Schichten auf Substraten
JP3591710B2 (ja) * 1999-12-08 2004-11-24 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
JP4396793B2 (ja) * 2000-04-27 2010-01-13 ソニー株式会社 基板の製造方法
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
JP2002293696A (ja) 2001-03-29 2002-10-09 Japan Science & Technology Corp ＧａＮ単結晶の製造方法
JP2003059835A (ja) * 2001-08-13 2003-02-28 Sony Corp 窒化物半導体の成長方法
KR100904501B1 (ko) * 2001-10-26 2009-06-25 암모노 에스피. 제트오. 오. 에피택시용 기판
US6949140B2 (en) * 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
AUPS240402A0 (en) * 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
US7098487B2 (en) * 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
KR101293352B1 (ko) 2002-12-27 2013-08-05 제너럴 일렉트릭 캄파니 갈륨 나이트라이드 결정, 호모에피택셜 갈륨나이트라이드계 디바이스 및 이들의 제조 방법
US7221037B2 (en) * 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
JP2004224600A (ja) 2003-01-20 2004-08-12 Matsushita Electric Ind Co Ltd Ｉｉｉ族窒化物基板の製造方法および半導体装置
JP4377600B2 (ja) * 2003-03-24 2009-12-02 株式会社東芝 ３族窒化物半導体の積層構造、その製造方法、及び３族窒化物半導体装置
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
US7125801B2 (en) * 2003-08-06 2006-10-24 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
DE102004048454B4 (de) 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
DE102004048453A1 (de) 2004-10-05 2006-04-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze

Also Published As

Publication number Publication date
DE102004048454A1 (de) 2006-04-13
US8728233B2 (en) 2014-05-20
DE102004048454B4 (de) 2008-02-07
EP1805354B1 (de) 2010-07-28
US20080118648A1 (en) 2008-05-22
WO2006037310A1 (de) 2006-04-13
JP2008515755A (ja) 2008-05-15
EP1805354A1 (de) 2007-07-11

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