DE50313348D1 - Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator - Google Patents

Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Info

Publication number
DE50313348D1
DE50313348D1 DE50313348T DE50313348T DE50313348D1 DE 50313348 D1 DE50313348 D1 DE 50313348D1 DE 50313348 T DE50313348 T DE 50313348T DE 50313348 T DE50313348 T DE 50313348T DE 50313348 D1 DE50313348 D1 DE 50313348D1
Authority
DE
Germany
Prior art keywords
silicon
separating
inoxinitride
mim
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50313348T
Other languages
English (en)
Inventor
Mirko Vogt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE50313348T priority Critical patent/DE50313348D1/de
Application granted granted Critical
Publication of DE50313348D1 publication Critical patent/DE50313348D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
DE50313348T 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator Expired - Lifetime DE50313348D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50313348T DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10223954A DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
DE50313348T DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator
PCT/DE2003/001552 WO2003102264A2 (de) 2002-05-29 2003-05-14 Verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid sowie entsprechendes erzeugnis,

Publications (1)

Publication Number Publication Date
DE50313348D1 true DE50313348D1 (de) 2011-02-03

Family

ID=29432440

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10223954A Withdrawn DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
DE50313348T Expired - Lifetime DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10223954A Withdrawn DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung

Country Status (6)

Country Link
US (1) US7294553B2 (de)
EP (1) EP1507888B1 (de)
JP (1) JP4825418B2 (de)
DE (2) DE10223954A1 (de)
TW (1) TWI312543B (de)
WO (1) WO2003102264A2 (de)

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US20050073678A1 (en) * 2003-09-26 2005-04-07 Jamil Tahir-Kheli Detection and reduction of dielectric breakdown in semiconductor devices
DE102004003337A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren, Silizium-Sauerstoff-Stickstoff-haltiges Material und Schicht-Anordnung
US7097779B2 (en) * 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
DE102004050391B4 (de) 2004-10-15 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
US7268038B2 (en) * 2004-11-23 2007-09-11 Newport Fab, Llc Method for fabricating a MIM capacitor having increased capacitance density and related structure
JP5186776B2 (ja) * 2007-02-22 2013-04-24 富士通株式会社 半導体装置及びその製造方法
US7606021B2 (en) * 2007-02-26 2009-10-20 United Microelectronics Corp. Metal-insulator-metal capacitor and method for fabricating the same
US20090071371A1 (en) * 2007-09-18 2009-03-19 College Of William And Mary Silicon Oxynitride Coating Compositions
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US7943527B2 (en) * 2008-05-30 2011-05-17 The Board Of Trustees Of The University Of Illinois Surface preparation for thin film growth by enhanced nucleation
KR101017763B1 (ko) * 2008-10-16 2011-02-28 주식회사 동부하이텍 Ｍｉｍ 커패시터 및 그 제조 방법
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Ｓｐｐテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
CN103094076B (zh) * 2011-11-02 2015-12-16 无锡华润上华半导体有限公司 用于提高0.18μm工艺MIM电容性能的方法
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP2015149404A (ja) * 2014-02-06 2015-08-20 富士フイルム株式会社 シリコンオキシナイトライド膜およびその製造方法、トランジスタ
US10693062B2 (en) * 2015-12-08 2020-06-23 Crossbar, Inc. Regulating interface layer formation for two-terminal memory
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
US11710631B2 (en) 2020-10-23 2023-07-25 Applied Materials, Inc. Tensile nitride deposition systems and methods
WO2023017780A1 (ja) * 2021-08-11 2023-02-16 株式会社村田製作所 弾性波装置
KR102438504B1 (ko) * 2021-11-24 2022-08-31 주식회사 아이에스티이 SiCN 박막 형성 방법
CN115955913A (zh) * 2023-02-13 2023-04-11 广州粤芯半导体技术有限公司 电容结构及其制备方法、半导体结构

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Also Published As

Publication number Publication date
TW200403762A (en) 2004-03-01
JP2005530924A (ja) 2005-10-13
DE10223954A1 (de) 2003-12-11
WO2003102264A2 (de) 2003-12-11
WO2003102264A3 (de) 2004-04-08
TWI312543B (en) 2009-07-21
EP1507888A2 (de) 2005-02-23
US7294553B2 (en) 2007-11-13
EP1507888B1 (de) 2010-12-22
US20060084236A1 (en) 2006-04-20
JP4825418B2 (ja) 2011-11-30

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