DE59307748D1 - Verfahren zur herstellung von speicherkondensatoren für dram-zellen - Google Patents
Verfahren zur herstellung von speicherkondensatoren für dram-zellenInfo
- Publication number
- DE59307748D1 DE59307748D1 DE59307748T DE59307748T DE59307748D1 DE 59307748 D1 DE59307748 D1 DE 59307748D1 DE 59307748 T DE59307748 T DE 59307748T DE 59307748 T DE59307748 T DE 59307748T DE 59307748 D1 DE59307748 D1 DE 59307748D1
- Authority
- DE
- Germany
- Prior art keywords
- dummies
- pct
- storage
- dram cells
- storage capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE59307748T DE59307748D1 (de) | 1992-07-08 | 1993-06-15 | Verfahren zur herstellung von speicherkondensatoren für dram-zellen |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4222467A DE4222467C1 (de) | 1992-07-08 | 1992-07-08 | |
DE59307748T DE59307748D1 (de) | 1992-07-08 | 1993-06-15 | Verfahren zur herstellung von speicherkondensatoren für dram-zellen |
PCT/DE1993/000516 WO1994001891A1 (de) | 1992-07-08 | 1993-06-15 | Verfahren zur herstellung von speicherkondensatoren für dram-zellen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59307748D1 true DE59307748D1 (de) | 1998-01-08 |
Family
ID=6462779
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4222467A Expired - Fee Related DE4222467C1 (de) | 1992-07-08 | 1992-07-08 | |
DE59307748T Expired - Fee Related DE59307748D1 (de) | 1992-07-08 | 1993-06-15 | Verfahren zur herstellung von speicherkondensatoren für dram-zellen |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4222467A Expired - Fee Related DE4222467C1 (de) | 1992-07-08 | 1992-07-08 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5496757A (de) |
EP (1) | EP0649566B1 (de) |
JP (1) | JP3330605B2 (de) |
KR (1) | KR100309614B1 (de) |
AT (1) | ATE160652T1 (de) |
DE (2) | DE4222467C1 (de) |
HK (1) | HK1002337A1 (de) |
TW (1) | TW358242B (de) |
WO (1) | WO1994001891A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19640273C1 (de) | 1996-09-30 | 1998-03-12 | Siemens Ag | Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen |
US6395613B1 (en) * | 2000-08-30 | 2002-05-28 | Micron Technology, Inc. | Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts |
US5998256A (en) * | 1996-11-01 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry |
KR100227070B1 (ko) * | 1996-11-04 | 1999-10-15 | 구본준 | 커패시터 및 그의 제조방법 |
US6590250B2 (en) | 1997-11-25 | 2003-07-08 | Micron Technology, Inc. | DRAM capacitor array and integrated device array of substantially identically shaped devices |
JP2000077619A (ja) * | 1998-08-27 | 2000-03-14 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6157067A (en) * | 1999-01-04 | 2000-12-05 | International Business Machines Corporation | Metal oxide semiconductor capacitor utilizing dummy lithographic patterns |
KR100338959B1 (ko) * | 2000-08-31 | 2002-06-01 | 박종섭 | 반도체 소자의 커패시터 하부전극 제조방법 |
KR100502410B1 (ko) | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
US7468323B2 (en) * | 2004-02-27 | 2008-12-23 | Micron Technology, Inc. | Method of forming high aspect ratio structures |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62286270A (ja) * | 1986-06-05 | 1987-12-12 | Sony Corp | 半導体メモリ装置 |
IT1245495B (it) * | 1990-01-26 | 1994-09-27 | Mitsubishi Electric Corp | Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa |
DD299990A5 (de) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung |
JP2519569B2 (ja) * | 1990-04-27 | 1996-07-31 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JPH0629483A (ja) * | 1991-04-29 | 1994-02-04 | Micron Technol Inc | スタック型iセルキャパシタおよびその製造方法 |
-
1992
- 1992-07-08 DE DE4222467A patent/DE4222467C1/de not_active Expired - Fee Related
-
1993
- 1993-06-15 DE DE59307748T patent/DE59307748D1/de not_active Expired - Fee Related
- 1993-06-15 KR KR1019950700021A patent/KR100309614B1/ko not_active IP Right Cessation
- 1993-06-15 EP EP93912589A patent/EP0649566B1/de not_active Expired - Lifetime
- 1993-06-15 US US08/351,464 patent/US5496757A/en not_active Expired - Lifetime
- 1993-06-15 WO PCT/DE1993/000516 patent/WO1994001891A1/de active IP Right Grant
- 1993-06-15 AT AT93912589T patent/ATE160652T1/de not_active IP Right Cessation
- 1993-06-15 JP JP50280694A patent/JP3330605B2/ja not_active Expired - Fee Related
- 1993-07-07 TW TW082105415A patent/TW358242B/zh not_active IP Right Cessation
-
1998
- 1998-02-20 HK HK98101321A patent/HK1002337A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5496757A (en) | 1996-03-05 |
DE4222467C1 (de) | 1993-06-24 |
TW358242B (en) | 1999-05-11 |
EP0649566A1 (de) | 1995-04-26 |
EP0649566B1 (de) | 1997-11-26 |
WO1994001891A1 (de) | 1994-01-20 |
KR100309614B1 (ko) | 2002-08-27 |
JP3330605B2 (ja) | 2002-09-30 |
KR950702748A (ko) | 1995-07-29 |
ATE160652T1 (de) | 1997-12-15 |
JPH07509346A (ja) | 1995-10-12 |
HK1002337A1 (en) | 1998-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
8339 | Ceased/non-payment of the annual fee |