DE59309253D1 - Photoresistmaterial auf Basis von Polystyrolen - Google Patents
Photoresistmaterial auf Basis von PolystyrolenInfo
- Publication number
- DE59309253D1 DE59309253D1 DE59309253T DE59309253T DE59309253D1 DE 59309253 D1 DE59309253 D1 DE 59309253D1 DE 59309253 T DE59309253 T DE 59309253T DE 59309253 T DE59309253 T DE 59309253T DE 59309253 D1 DE59309253 D1 DE 59309253D1
- Authority
- DE
- Germany
- Prior art keywords
- polystyrenes
- material based
- photoresist material
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/225—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/96—Esters of carbonic or haloformic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/02—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
- C07D307/04—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
- C07D307/18—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D307/20—Oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
- C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
- C07D309/08—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D309/10—Oxygen atoms
- C07D309/12—Oxygen atoms only hydrogen atoms and one oxygen atom directly attached to ring carbon atoms, e.g. tetrahydropyranyl ethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH137892 | 1992-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59309253D1 true DE59309253D1 (de) | 1999-02-11 |
Family
ID=4209027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE59309253T Expired - Fee Related DE59309253D1 (de) | 1992-04-29 | 1993-04-20 | Photoresistmaterial auf Basis von Polystyrolen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5324804A (de) |
EP (1) | EP0568496B1 (de) |
JP (1) | JPH06100488A (de) |
KR (1) | KR100282622B1 (de) |
DE (1) | DE59309253D1 (de) |
TW (1) | TW304235B (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE59306590D1 (de) * | 1992-12-04 | 1997-07-03 | Ocg Microelectronic Materials | Positiv-Photoresist mit verbesserten Prozesseigenschaften |
JP2936956B2 (ja) * | 1993-04-15 | 1999-08-23 | 信越化学工業株式会社 | レジスト材料 |
KR100233367B1 (ko) * | 1993-04-15 | 1999-12-01 | 카나가와 치히로 | 레지스트 재료 |
EP0709410A3 (de) * | 1994-10-26 | 1997-03-26 | Ocg Microelectronic Materials | Polymere |
KR100293130B1 (ko) * | 1995-04-12 | 2001-09-17 | 카나가와 치히로 | 고분자화합물및화학증폭포지티브형레지스트재료 |
DE19538160A1 (de) | 1995-10-13 | 1997-04-17 | Hoechst Ag | Formgebilde aus einem thermoplastischen Kunststoffschaum, Verfahren zu seiner Herstellung sowie seine Verwendung |
KR0185319B1 (ko) * | 1996-09-21 | 1999-05-15 | 김흥기 | 포지티브 포토레지스트 제조용 수지 및 이 수지를 함유하는 화학증폭형 포지티브 포토레지스트 조성물 |
US5962184A (en) * | 1996-12-13 | 1999-10-05 | International Business Machines Corporation | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent |
TW528932B (en) * | 1997-01-24 | 2003-04-21 | Shinetsu Chemical Co | Polymers and chemically amplified positive resist compositions |
TW530192B (en) * | 1997-01-27 | 2003-05-01 | Shinetsu Chemical Co | Partially hydrogenated polymer compound and chemically sensitized positive resist material |
TW574629B (en) * | 1997-02-28 | 2004-02-01 | Shinetsu Chemical Co | Polystyrene derivative chemically amplified positive resist compositions, and patterning method |
TW546543B (en) * | 1997-10-08 | 2003-08-11 | Shinetsu Chemical Co | Resist material and patterning process |
TW480370B (en) | 1997-10-08 | 2002-03-21 | Shinetsu Chemical Co | Polystyrene-based polymer compound, chemical amplification positive type resist material and pattern formation |
US6207353B1 (en) | 1997-12-10 | 2001-03-27 | International Business Machines Corporation | Resist formulation which minimizes blistering during etching |
KR100321080B1 (ko) | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
KR100252061B1 (ko) * | 1998-04-20 | 2000-06-01 | 윤종용 | 포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법 |
JP3587743B2 (ja) | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
US6569971B2 (en) * | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
TW487828B (en) * | 1998-10-29 | 2002-05-21 | Shinetsu Chemical Co | Positive resist composition |
KR20000056355A (ko) * | 1999-02-19 | 2000-09-15 | 김영환 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
JP3299215B2 (ja) | 1999-03-12 | 2002-07-08 | 松下電器産業株式会社 | パターン形成方法 |
JP3755571B2 (ja) | 1999-11-12 | 2006-03-15 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
US6737214B2 (en) | 2000-03-09 | 2004-05-18 | Shin-Etsu Chemical Co., Ltd. | Chemical amplification resist compositions |
JP3712047B2 (ja) | 2000-08-14 | 2005-11-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
EP1204001B1 (de) | 2000-11-01 | 2013-09-11 | Shin-Etsu Chemical Co., Ltd. | Resistzusammensetzung und Mustererzeugungsverfahren |
JP3821217B2 (ja) | 2001-10-30 | 2006-09-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3844069B2 (ja) | 2002-07-04 | 2006-11-08 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4068006B2 (ja) * | 2003-05-07 | 2008-03-26 | 信越化学工業株式会社 | サーマルフロー工程を用いた微細なコンタクトホール形成方法 |
JP3981830B2 (ja) * | 2003-05-26 | 2007-09-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US7586013B2 (en) * | 2004-03-26 | 2009-09-08 | E.I. Du Pont De Nemours And Company | Method for preparing hydroxystyrenes and acetylated derivatives thereof |
DE602004015513D1 (de) * | 2004-05-27 | 2008-09-11 | Think Labs Kk | Positive lichtempfindliche zusammensetzung |
JP4582331B2 (ja) * | 2005-11-08 | 2010-11-17 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US7402713B2 (en) * | 2006-03-07 | 2008-07-22 | E.I. Du Pont De Nemours And Company | Processes for conversion of tyrosine to p-hydroxystyrene and p-acetoxystyrene |
US8759465B2 (en) * | 2006-04-25 | 2014-06-24 | Purdue Research Foundation | Cross-linkable polymeric compositions |
JP5183903B2 (ja) | 2006-10-13 | 2013-04-17 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びこれを用いたパターン形成方法 |
WO2011002994A2 (en) * | 2009-07-01 | 2011-01-06 | Bridgestone Corporation | Method of making hydroxyaryl-functionalized interpolymer by free radical initiated polymerization |
JP5724150B2 (ja) * | 2010-11-10 | 2015-05-27 | エルジー・ケム・リミテッド | 光学素子および光学素子を含む立体映像表示装置 |
WO2018087816A1 (ja) * | 2016-11-08 | 2018-05-17 | 日立化成株式会社 | 感光性導電フィルム、導電パターンの形成方法及び導電パターン基材の製造方法 |
JP7226408B2 (ja) * | 2020-07-30 | 2023-02-21 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6030687B2 (ja) * | 1980-08-30 | 1985-07-18 | 丸善石油株式会社 | パラヒドロキシスチレン重合体の製法 |
JPS6030686B2 (ja) * | 1980-08-30 | 1985-07-18 | 丸善石油株式会社 | パラヒドロキシスチレン重合体の製造方法 |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS61163913A (ja) * | 1985-01-12 | 1986-07-24 | デソト,インコ−ポレ−テツド | 光ファイバー用被覆材料 |
JPH0678409B2 (ja) * | 1986-02-04 | 1994-10-05 | 松下電器産業株式会社 | 樹脂組成物の混合方法 |
JP2521477B2 (ja) * | 1987-06-16 | 1996-08-07 | 日曹丸善ケミカル株式会社 | 反応性高分子化合物を含む組成物及びその製造方法 |
JP2548009B2 (ja) * | 1987-06-16 | 1996-10-30 | 日曹丸善ケミカル株式会社 | 反応性高分子化合物の製造方法 |
JPH0832860B2 (ja) * | 1987-06-29 | 1996-03-29 | ニチバン株式会社 | 電離放射線硬化粘着剤組成物 |
DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
DE3828064A1 (de) * | 1988-08-18 | 1990-03-01 | Hoechst Ag | Polymerisate aus substituierten (2-haloalkoxy-1,1,2-trifluoraethoxy)-styrolen, verfahren zu ihrer herstellung und ihre verwendung |
JP3057508B2 (ja) * | 1990-06-21 | 2000-06-26 | 日本曹達株式会社 | p―アルケニルフェノール系重合体の製造方法 |
ES2088499T3 (es) * | 1990-09-18 | 1996-08-16 | Akzo Nobel Nv | Procedimiento de copolimerizacion y copolimero optico producido a partir del mismo. |
US5084490A (en) * | 1990-12-10 | 1992-01-28 | Loctite (Ireland) Limited | Styryloxy compounds and polymers thereof |
JP3154529B2 (ja) * | 1991-10-14 | 2001-04-09 | 鐘淵化学工業株式会社 | 官能基を有するイソブチレン系重合体及びその製造法 |
-
1993
- 1993-04-10 TW TW082102709A patent/TW304235B/zh active
- 1993-04-20 EP EP93810284A patent/EP0568496B1/de not_active Expired - Lifetime
- 1993-04-20 DE DE59309253T patent/DE59309253D1/de not_active Expired - Fee Related
- 1993-04-22 US US08/051,720 patent/US5324804A/en not_active Expired - Fee Related
- 1993-04-28 JP JP5125518A patent/JPH06100488A/ja active Pending
- 1993-04-28 KR KR1019930007270A patent/KR100282622B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0568496B1 (de) | 1998-12-30 |
EP0568496A3 (de) | 1994-03-16 |
US5324804A (en) | 1994-06-28 |
EP0568496A2 (de) | 1993-11-03 |
JPH06100488A (ja) | 1994-04-12 |
KR100282622B1 (ko) | 2001-02-15 |
KR930021588A (ko) | 1993-11-22 |
TW304235B (de) | 1997-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE59309253D1 (de) | Photoresistmaterial auf Basis von Polystyrolen | |
KR950702286A (ko) | 마이크로밸브(Microvalve) | |
NO951749D0 (no) | Polyestermateriale | |
DE59208193D1 (de) | Nachbrenner | |
DE69309180D1 (de) | Lüfter | |
DE69218393T2 (de) | Resistmaterial | |
DE69328444D1 (de) | Schalter | |
DE59108086D1 (de) | Photoresist | |
DE59303206D1 (de) | Papierleimungsmittelmischungen | |
DE69323551T2 (de) | Polyester | |
FR2694974B1 (fr) | Incinerateur. | |
DE69405479T2 (de) | Resistmaterialien | |
DE69318917T2 (de) | Substituierte Styrole | |
DE69222869T2 (de) | Verbrennungsvorrichtung | |
KR940025159U (ko) | 소각로 | |
BR9207020A (pt) | Novos herbicidas | |
ATA83492A (de) | Zerstörladung | |
KR940000426U (ko) | 방향제 케이스 | |
DE59302143D1 (de) | Grenztaster | |
KR930021316U (ko) | 메모지 | |
KR940000427U (ko) | 방향제 케이스 | |
KR940021336U (ko) | 감광액 순환장치 | |
NO922477D0 (no) | Forbrenningsovn | |
KR940006005U (ko) | 소각기 | |
ITTO920738A1 (it) | Inceneritore |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |