DE60001600D1 - Methode zur Herstellung von vertikalen Transistoren - Google Patents

Methode zur Herstellung von vertikalen Transistoren

Info

Publication number
DE60001600D1
DE60001600D1 DE60001600T DE60001600T DE60001600D1 DE 60001600 D1 DE60001600 D1 DE 60001600D1 DE 60001600 T DE60001600 T DE 60001600T DE 60001600 T DE60001600 T DE 60001600T DE 60001600 D1 DE60001600 D1 DE 60001600D1
Authority
DE
Germany
Prior art keywords
vertical transistors
making vertical
making
transistors
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60001600T
Other languages
English (en)
Other versions
DE60001600T2 (de
Inventor
John Michael Hergenrother
Donald Paul Monroe
Gary Robert Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE60001600D1 publication Critical patent/DE60001600D1/de
Application granted granted Critical
Publication of DE60001600T2 publication Critical patent/DE60001600T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
DE60001600T 1999-06-18 2000-06-06 Methode zur Herstellung von vertikalen Transistoren Expired - Lifetime DE60001600T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/335,707 US6197641B1 (en) 1998-08-28 1999-06-18 Process for fabricating vertical transistors

Publications (2)

Publication Number Publication Date
DE60001600D1 true DE60001600D1 (de) 2003-04-17
DE60001600T2 DE60001600T2 (de) 2003-11-13

Family

ID=23312924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60001600T Expired - Lifetime DE60001600T2 (de) 1999-06-18 2000-06-06 Methode zur Herstellung von vertikalen Transistoren

Country Status (5)

Country Link
US (1) US6197641B1 (de)
EP (1) EP1063694B1 (de)
JP (1) JP2001057427A (de)
KR (1) KR100392278B1 (de)
DE (1) DE60001600T2 (de)

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US6551946B1 (en) 1999-06-24 2003-04-22 Agere Systems Inc. Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature
US6670242B1 (en) 1999-06-24 2003-12-30 Agere Systems Inc. Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer
US6420822B1 (en) * 1999-07-15 2002-07-16 Northrop Grumman Corporation Thermionic electron emitter based upon the triple-junction effect
US20030235957A1 (en) * 2002-06-25 2003-12-25 Samir Chaudhry Method and structure for graded gate oxides on vertical and non-planar surfaces
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
DE10036897C1 (de) 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
EP2988331B1 (de) 2000-08-14 2019-01-09 SanDisk Technologies LLC Halbleiterspeicherbauelement
US6426259B1 (en) * 2000-11-15 2002-07-30 Advanced Micro Devices, Inc. Vertical field effect transistor with metal oxide as sidewall gate insulator
US6455377B1 (en) * 2001-01-19 2002-09-24 Chartered Semiconductor Manufacturing Ltd. Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
US6649451B1 (en) 2001-02-02 2003-11-18 Matrix Semiconductor, Inc. Structure and method for wafer comprising dielectric and semiconductor
US7352199B2 (en) * 2001-02-20 2008-04-01 Sandisk Corporation Memory card with enhanced testability and methods of making and using the same
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6843421B2 (en) 2001-08-13 2005-01-18 Matrix Semiconductor, Inc. Molded memory module and method of making the module absent a substrate support
US6690040B2 (en) * 2001-09-10 2004-02-10 Agere Systems Inc. Vertical replacement-gate junction field-effect transistor
US20030052365A1 (en) * 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US6759730B2 (en) 2001-09-18 2004-07-06 Agere Systems Inc. Bipolar junction transistor compatible with vertical replacement gate transistor
US6686604B2 (en) 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6709904B2 (en) * 2001-09-28 2004-03-23 Agere Systems Inc. Vertical replacement-gate silicon-on-insulator transistor
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
KR100406537B1 (ko) * 2001-12-03 2003-11-20 주식회사 하이닉스반도체 반도체장치의 제조 방법
US6773994B2 (en) * 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
KR100406578B1 (ko) * 2001-12-29 2003-11-20 동부전자 주식회사 반도체 소자의 제조방법
US6731011B2 (en) 2002-02-19 2004-05-04 Matrix Semiconductor, Inc. Memory module having interconnected and stacked integrated circuits
US6853049B2 (en) * 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6784101B1 (en) * 2002-05-16 2004-08-31 Advanced Micro Devices Inc Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation
US6635924B1 (en) * 2002-06-06 2003-10-21 Agere Systems Inc. Ultra thin body vertical replacement gate MOSFET
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US6762094B2 (en) 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
US6632712B1 (en) * 2002-10-03 2003-10-14 Chartered Semiconductor Manufacturing Ltd. Method of fabricating variable length vertical transistors
DE10328072B4 (de) * 2003-06-23 2007-03-15 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauelementen als Stacked-Mehrfach-Gatter
US7202186B2 (en) * 2003-07-31 2007-04-10 Tokyo Electron Limited Method of forming uniform ultra-thin oxynitride layers
US7235440B2 (en) * 2003-07-31 2007-06-26 Tokyo Electron Limited Formation of ultra-thin oxide layers by self-limiting interfacial oxidation
US20070034909A1 (en) * 2003-09-22 2007-02-15 James Stasiak Nanometer-scale semiconductor devices and method of making
DE10350751B4 (de) * 2003-10-30 2008-04-24 Infineon Technologies Ag Verfahren zum Herstellen eines vertikalen Feldeffekttransistors und Feldeffekt-Speichertransistor, insbesondere FLASH-Speichertransistor
US7138302B2 (en) * 2004-01-12 2006-11-21 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit channel region
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7026689B2 (en) * 2004-08-27 2006-04-11 Taiwan Semiconductor Manufacturing Company Metal gate structure for MOS devices
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation
FR2897204B1 (fr) * 2006-02-07 2008-05-30 Ecole Polytechnique Etablissem Structure de transistor vertical et procede de fabrication
TWI305669B (en) * 2006-07-14 2009-01-21 Nanya Technology Corp Method for making a raised vertical channel transistor device
US20080122010A1 (en) * 2006-11-02 2008-05-29 International Business Machines Corporation Transistor having source/drain region only under sidewall spacer except for contacts and method
KR100781580B1 (ko) * 2006-12-07 2007-12-03 한국전자통신연구원 이중 구조 핀 전계 효과 트랜지스터 및 그 제조 방법
JP5468390B2 (ja) * 2008-01-29 2014-04-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置およびその製造方法
EP2315239A1 (de) * 2009-10-23 2011-04-27 Imec Verfahren zur Bildung von monokristallinem Germanium oder Silizium-Germanium
US8623757B2 (en) * 2011-09-29 2014-01-07 Eastmak Kodak Company Producing a vertical transistor including reentrant profile
CN102623343B (zh) * 2012-03-14 2014-06-04 上海华力微电子有限公司 半导体器件侧墙空洞层制备方法
US9099423B2 (en) * 2013-07-12 2015-08-04 Asm Ip Holding B.V. Doped semiconductor films and processing
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
CN105826200B (zh) * 2015-01-09 2018-11-16 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
EP3185299B1 (de) 2015-12-21 2023-05-24 IMEC vzw Selbstausgerichtete nanostrukturen für halbleiterbauelement
US9882047B2 (en) 2016-02-01 2018-01-30 International Business Machines Corporation Self-aligned replacement metal gate spacerless vertical field effect transistor
US9711618B1 (en) 2016-03-31 2017-07-18 International Business Machines Corporation Fabrication of vertical field effect transistor structure with controlled gate length
US10032906B2 (en) * 2016-04-29 2018-07-24 Samsung Electronics Co., Ltd. Vertical field effect transistor and method of fabricating the same
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US10734245B2 (en) * 2018-10-19 2020-08-04 International Business Machines Corporation Highly selective dry etch process for vertical FET STI recess
US11075280B2 (en) 2019-04-17 2021-07-27 International Business Machines Corporation Self-aligned gate and junction for VTFET
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Also Published As

Publication number Publication date
KR20010029807A (ko) 2001-04-16
EP1063694A1 (de) 2000-12-27
US6197641B1 (en) 2001-03-06
KR100392278B1 (ko) 2003-07-22
EP1063694B1 (de) 2003-03-12
JP2001057427A (ja) 2001-02-27
DE60001600T2 (de) 2003-11-13

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