DE60006933D1 - Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung - Google Patents

Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung

Info

Publication number
DE60006933D1
DE60006933D1 DE60006933T DE60006933T DE60006933D1 DE 60006933 D1 DE60006933 D1 DE 60006933D1 DE 60006933 T DE60006933 T DE 60006933T DE 60006933 T DE60006933 T DE 60006933T DE 60006933 D1 DE60006933 D1 DE 60006933D1
Authority
DE
Germany
Prior art keywords
semiconductors
ceramic tile
manufacturing device
tile lining
lining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60006933T
Other languages
English (en)
Other versions
DE60006933T2 (de
Inventor
S Kennedy
A Maraschin
S Hubacek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60006933D1 publication Critical patent/DE60006933D1/de
Publication of DE60006933T2 publication Critical patent/DE60006933T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
DE60006933T 1999-09-23 2000-09-11 Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung Expired - Lifetime DE60006933T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/401,193 US6408786B1 (en) 1999-09-23 1999-09-23 Semiconductor processing equipment having tiled ceramic liner
US401193 1999-09-23
PCT/US2000/024868 WO2001022471A1 (en) 1999-09-23 2000-09-11 Semiconductor processing equipment having tiled ceramic liner

Publications (2)

Publication Number Publication Date
DE60006933D1 true DE60006933D1 (de) 2004-01-15
DE60006933T2 DE60006933T2 (de) 2004-11-11

Family

ID=23586735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60006933T Expired - Lifetime DE60006933T2 (de) 1999-09-23 2000-09-11 Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung

Country Status (9)

Country Link
US (1) US6408786B1 (de)
EP (1) EP1138055B1 (de)
JP (1) JP4741129B2 (de)
KR (1) KR100731557B1 (de)
CN (2) CN1215525C (de)
AU (1) AU7477900A (de)
DE (1) DE60006933T2 (de)
TW (1) TW512452B (de)
WO (1) WO2001022471A1 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040149214A1 (en) * 1999-06-02 2004-08-05 Tokyo Electron Limited Vacuum processing apparatus
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US6889627B1 (en) * 2001-08-08 2005-05-10 Lam Research Corporation Symmetrical semiconductor reactor
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
KR100813083B1 (ko) * 2002-04-17 2008-03-14 셀레스 유도 가열 장치용 단열 가스 밀봉 및 진공 밀봉 챔버
FR2842387B1 (fr) * 2002-07-11 2005-07-08 Cit Alcatel Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
JP3650772B2 (ja) * 2002-12-17 2005-05-25 松下電器産業株式会社 プラズマ処理装置
US20040134427A1 (en) * 2003-01-09 2004-07-15 Derderian Garo J. Deposition chamber surface enhancement and resulting deposition chambers
US6844260B2 (en) * 2003-01-30 2005-01-18 Micron Technology, Inc. Insitu post atomic layer deposition destruction of active species
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US6951821B2 (en) * 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
JP4460418B2 (ja) * 2004-10-13 2010-05-12 東京エレクトロン株式会社 シールド体および真空処理装置
US20060086458A1 (en) * 2004-10-25 2006-04-27 Kim Hong J Ceramic materials in plasma tool environments
US7776156B2 (en) * 2005-02-10 2010-08-17 Applied Materials, Inc. Side RF coil and side heater for plasma processing apparatus
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
CN101165868B (zh) * 2006-10-20 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
WO2008082883A1 (en) * 2006-12-28 2008-07-10 Exatec Llc Method and apparatus for stabilizing a coating
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US7767028B2 (en) 2007-03-14 2010-08-03 Lam Research Corporation Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US8034410B2 (en) 2007-07-17 2011-10-11 Asm International N.V. Protective inserts to line holes in parts for semiconductor process equipment
US8367227B2 (en) * 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
SG187387A1 (en) 2007-12-19 2013-02-28 Lam Res Corp Film adhesive for semiconductor vacuum processing apparatus
KR101553422B1 (ko) 2007-12-19 2015-09-15 램 리써치 코포레이션 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리
JP2009200184A (ja) * 2008-02-20 2009-09-03 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置のバッフル板
JP2009267070A (ja) * 2008-04-25 2009-11-12 Mitsubishi Materials Corp プラズマエッチング装置
JP2010238944A (ja) * 2009-03-31 2010-10-21 Panasonic Corp プラズマ処理装置
WO2011042949A1 (ja) * 2009-10-05 2011-04-14 株式会社島津製作所 表面波プラズマcvd装置および成膜方法
TWI503907B (zh) * 2010-04-14 2015-10-11 Wonik Ips Co Ltd 基板處理設備
CN102222598B (zh) * 2010-04-19 2015-04-08 圆益Ips股份有限公司 衬底处理装置
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
CN103237916B (zh) * 2010-12-03 2015-07-22 夏普株式会社 蒸镀装置和回收装置
WO2012148370A1 (en) * 2011-04-27 2012-11-01 Axcelis Technologies, Inc. Substantially non-oxidizing plasma treatment devices and processes
US9679751B2 (en) * 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
CN103377979B (zh) * 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
US9761416B2 (en) * 2013-03-15 2017-09-12 Applied Materials, Inc. Apparatus and methods for reducing particles in semiconductor process chambers
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US20150041062A1 (en) * 2013-08-12 2015-02-12 Lam Research Corporation Plasma processing chamber with removable body
US9837250B2 (en) * 2013-08-30 2017-12-05 Applied Materials, Inc. Hot wall reactor with cooled vacuum containment
WO2015061616A1 (en) 2013-10-24 2015-04-30 Surmet Corporation High purity polycrystalline aluminum oxynitride bodies
JP2015142016A (ja) * 2014-01-29 2015-08-03 東京エレクトロン株式会社 基板処理装置
US20170088948A1 (en) * 2014-03-26 2017-03-30 Hitachi Kokusai Electric Inc. Substrate processing apparatus and furnace opening cover
US10309012B2 (en) * 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
US11101068B2 (en) * 2016-04-29 2021-08-24 Trench Limited—Trench Group Canada Integrated barrier for protecting the coil of air core reactor from projectile attack
WO2018121896A1 (en) * 2016-12-27 2018-07-05 Evatec Ag Rf capacitive coupled dual frequency etch reactor
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
DE102018002473A1 (de) * 2018-03-24 2019-09-26 Siempelkamp Maschinen- Und Anlagenbau Gmbh Mischvorrichtung für Fasern oder Späne und Bindemittel
WO2020033097A1 (en) * 2018-08-06 2020-02-13 Applied Materials, Inc. Liner for processing chamber
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7422531B2 (ja) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN113737155B (zh) * 2020-05-29 2023-04-18 江苏鲁汶仪器股份有限公司 一种提高pecvd清洗效率的腔体内衬装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59151084A (ja) * 1983-02-18 1984-08-29 株式会社日立製作所 核融合装置
JPS61104291A (ja) * 1984-10-29 1986-05-22 株式会社日立製作所 核融合装置用真空容器及びその製造方法
JPH0741153Y2 (ja) 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5182059A (en) 1989-01-17 1993-01-26 Ngk Insulators, Ltd. Process for producing high density SiC sintered bodies
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5292399A (en) 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5085727A (en) 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
JP2944861B2 (ja) * 1993-07-22 1999-09-06 帝国インキ製造株式会社 スクラッチ発色印刷方法及びスクラッチ発色印刷体
JP3061346B2 (ja) * 1994-03-07 2000-07-10 東京エレクトロン株式会社 処理装置
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
KR100331053B1 (ko) 1994-05-17 2002-06-20 가나이 쓰도무 플라즈마처리장치및플라즈마처리방법
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
JPH10242130A (ja) * 1996-04-26 1998-09-11 Hitachi Ltd プラズマ処理方法及び装置
JP3360265B2 (ja) 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5904778A (en) 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US5993594A (en) 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber

Also Published As

Publication number Publication date
DE60006933T2 (de) 2004-11-11
US6408786B1 (en) 2002-06-25
AU7477900A (en) 2001-04-24
CN100392804C (zh) 2008-06-04
KR20010080529A (ko) 2001-08-22
JP2003510810A (ja) 2003-03-18
TW512452B (en) 2002-12-01
KR100731557B1 (ko) 2007-06-22
EP1138055A1 (de) 2001-10-04
EP1138055B1 (de) 2003-12-03
CN1215525C (zh) 2005-08-17
CN1327612A (zh) 2001-12-19
CN1734710A (zh) 2006-02-15
WO2001022471A1 (en) 2001-03-29
JP4741129B2 (ja) 2011-08-03

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