DE60006933D1 - Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung - Google Patents
Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidungInfo
- Publication number
- DE60006933D1 DE60006933D1 DE60006933T DE60006933T DE60006933D1 DE 60006933 D1 DE60006933 D1 DE 60006933D1 DE 60006933 T DE60006933 T DE 60006933T DE 60006933 T DE60006933 T DE 60006933T DE 60006933 D1 DE60006933 D1 DE 60006933D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- ceramic tile
- manufacturing device
- tile lining
- lining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/401,193 US6408786B1 (en) | 1999-09-23 | 1999-09-23 | Semiconductor processing equipment having tiled ceramic liner |
US401193 | 1999-09-23 | ||
PCT/US2000/024868 WO2001022471A1 (en) | 1999-09-23 | 2000-09-11 | Semiconductor processing equipment having tiled ceramic liner |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60006933D1 true DE60006933D1 (de) | 2004-01-15 |
DE60006933T2 DE60006933T2 (de) | 2004-11-11 |
Family
ID=23586735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60006933T Expired - Lifetime DE60006933T2 (de) | 1999-09-23 | 2000-09-11 | Herstellungsvorrichtung für halbleiter mit keramischer fliesenauskleidung |
Country Status (9)
Country | Link |
---|---|
US (1) | US6408786B1 (de) |
EP (1) | EP1138055B1 (de) |
JP (1) | JP4741129B2 (de) |
KR (1) | KR100731557B1 (de) |
CN (2) | CN1215525C (de) |
AU (1) | AU7477900A (de) |
DE (1) | DE60006933T2 (de) |
TW (1) | TW512452B (de) |
WO (1) | WO2001022471A1 (de) |
Families Citing this family (70)
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US20040149214A1 (en) * | 1999-06-02 | 2004-08-05 | Tokyo Electron Limited | Vacuum processing apparatus |
US6673198B1 (en) * | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
US6889627B1 (en) * | 2001-08-08 | 2005-05-10 | Lam Research Corporation | Symmetrical semiconductor reactor |
JP2003213421A (ja) * | 2002-01-21 | 2003-07-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
KR100813083B1 (ko) * | 2002-04-17 | 2008-03-14 | 셀레스 | 유도 가열 장치용 단열 가스 밀봉 및 진공 밀봉 챔버 |
FR2842387B1 (fr) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
JP3650772B2 (ja) * | 2002-12-17 | 2005-05-25 | 松下電器産業株式会社 | プラズマ処理装置 |
US20040134427A1 (en) * | 2003-01-09 | 2004-07-15 | Derderian Garo J. | Deposition chamber surface enhancement and resulting deposition chambers |
US6844260B2 (en) * | 2003-01-30 | 2005-01-18 | Micron Technology, Inc. | Insitu post atomic layer deposition destruction of active species |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
US8540843B2 (en) * | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
JP4460418B2 (ja) * | 2004-10-13 | 2010-05-12 | 東京エレクトロン株式会社 | シールド体および真空処理装置 |
US20060086458A1 (en) * | 2004-10-25 | 2006-04-27 | Kim Hong J | Ceramic materials in plasma tool environments |
US7776156B2 (en) * | 2005-02-10 | 2010-08-17 | Applied Materials, Inc. | Side RF coil and side heater for plasma processing apparatus |
US7480974B2 (en) * | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
CN101165868B (zh) * | 2006-10-20 | 2010-05-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片处理室的内衬及包含该内衬的晶片处理室 |
US8043430B2 (en) * | 2006-12-20 | 2011-10-25 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
WO2008082883A1 (en) * | 2006-12-28 | 2008-07-10 | Exatec Llc | Method and apparatus for stabilizing a coating |
US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
US7767028B2 (en) | 2007-03-14 | 2010-08-03 | Lam Research Corporation | Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US8034410B2 (en) | 2007-07-17 | 2011-10-11 | Asm International N.V. | Protective inserts to line holes in parts for semiconductor process equipment |
US8367227B2 (en) * | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
SG187387A1 (en) | 2007-12-19 | 2013-02-28 | Lam Res Corp | Film adhesive for semiconductor vacuum processing apparatus |
KR101553422B1 (ko) | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리 |
JP2009200184A (ja) * | 2008-02-20 | 2009-09-03 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理装置のバッフル板 |
JP2009267070A (ja) * | 2008-04-25 | 2009-11-12 | Mitsubishi Materials Corp | プラズマエッチング装置 |
JP2010238944A (ja) * | 2009-03-31 | 2010-10-21 | Panasonic Corp | プラズマ処理装置 |
WO2011042949A1 (ja) * | 2009-10-05 | 2011-04-14 | 株式会社島津製作所 | 表面波プラズマcvd装置および成膜方法 |
TWI503907B (zh) * | 2010-04-14 | 2015-10-11 | Wonik Ips Co Ltd | 基板處理設備 |
CN102222598B (zh) * | 2010-04-19 | 2015-04-08 | 圆益Ips股份有限公司 | 衬底处理装置 |
US8597462B2 (en) | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
CN103237916B (zh) * | 2010-12-03 | 2015-07-22 | 夏普株式会社 | 蒸镀装置和回收装置 |
WO2012148370A1 (en) * | 2011-04-27 | 2012-11-01 | Axcelis Technologies, Inc. | Substantially non-oxidizing plasma treatment devices and processes |
US9679751B2 (en) * | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
CN103377979B (zh) * | 2012-04-30 | 2016-06-08 | 细美事有限公司 | 调节板和具有该调节板的用于处理基板的装置 |
US9761416B2 (en) * | 2013-03-15 | 2017-09-12 | Applied Materials, Inc. | Apparatus and methods for reducing particles in semiconductor process chambers |
US20140356985A1 (en) | 2013-06-03 | 2014-12-04 | Lam Research Corporation | Temperature controlled substrate support assembly |
US20150041062A1 (en) * | 2013-08-12 | 2015-02-12 | Lam Research Corporation | Plasma processing chamber with removable body |
US9837250B2 (en) * | 2013-08-30 | 2017-12-05 | Applied Materials, Inc. | Hot wall reactor with cooled vacuum containment |
WO2015061616A1 (en) | 2013-10-24 | 2015-04-30 | Surmet Corporation | High purity polycrystalline aluminum oxynitride bodies |
JP2015142016A (ja) * | 2014-01-29 | 2015-08-03 | 東京エレクトロン株式会社 | 基板処理装置 |
US20170088948A1 (en) * | 2014-03-26 | 2017-03-30 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and furnace opening cover |
US10309012B2 (en) * | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
KR101792941B1 (ko) * | 2015-04-30 | 2017-11-02 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 | 화학기상증착장치 및 그 세정방법 |
US11101068B2 (en) * | 2016-04-29 | 2021-08-24 | Trench Limited—Trench Group Canada | Integrated barrier for protecting the coil of air core reactor from projectile attack |
WO2018121896A1 (en) * | 2016-12-27 | 2018-07-05 | Evatec Ag | Rf capacitive coupled dual frequency etch reactor |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
DE102018002473A1 (de) * | 2018-03-24 | 2019-09-26 | Siempelkamp Maschinen- Und Anlagenbau Gmbh | Mischvorrichtung für Fasern oder Späne und Bindemittel |
WO2020033097A1 (en) * | 2018-08-06 | 2020-02-13 | Applied Materials, Inc. | Liner for processing chamber |
CN208835019U (zh) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | 一种反应腔内衬 |
CN112713073B (zh) * | 2019-10-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种耐腐蚀气体输送部件及其等离子体处理装置 |
JP7422531B2 (ja) * | 2019-12-17 | 2024-01-26 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7365912B2 (ja) * | 2020-01-10 | 2023-10-20 | 東京エレクトロン株式会社 | エッジリング及び基板処理装置 |
CN113737155B (zh) * | 2020-05-29 | 2023-04-18 | 江苏鲁汶仪器股份有限公司 | 一种提高pecvd清洗效率的腔体内衬装置 |
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US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
FR2538987A1 (fr) | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
JPS59151084A (ja) * | 1983-02-18 | 1984-08-29 | 株式会社日立製作所 | 核融合装置 |
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-
1999
- 1999-09-23 US US09/401,193 patent/US6408786B1/en not_active Expired - Lifetime
-
2000
- 2000-09-11 CN CNB008023441A patent/CN1215525C/zh not_active Expired - Fee Related
- 2000-09-11 AU AU74779/00A patent/AU7477900A/en not_active Abandoned
- 2000-09-11 KR KR1020017006436A patent/KR100731557B1/ko active IP Right Grant
- 2000-09-11 DE DE60006933T patent/DE60006933T2/de not_active Expired - Lifetime
- 2000-09-11 JP JP2001525748A patent/JP4741129B2/ja not_active Expired - Fee Related
- 2000-09-11 WO PCT/US2000/024868 patent/WO2001022471A1/en active IP Right Grant
- 2000-09-11 CN CNB2005100847409A patent/CN100392804C/zh not_active Expired - Fee Related
- 2000-09-11 EP EP00963352A patent/EP1138055B1/de not_active Expired - Lifetime
- 2000-09-18 TW TW089119144A patent/TW512452B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60006933T2 (de) | 2004-11-11 |
US6408786B1 (en) | 2002-06-25 |
AU7477900A (en) | 2001-04-24 |
CN100392804C (zh) | 2008-06-04 |
KR20010080529A (ko) | 2001-08-22 |
JP2003510810A (ja) | 2003-03-18 |
TW512452B (en) | 2002-12-01 |
KR100731557B1 (ko) | 2007-06-22 |
EP1138055A1 (de) | 2001-10-04 |
EP1138055B1 (de) | 2003-12-03 |
CN1215525C (zh) | 2005-08-17 |
CN1327612A (zh) | 2001-12-19 |
CN1734710A (zh) | 2006-02-15 |
WO2001022471A1 (en) | 2001-03-29 |
JP4741129B2 (ja) | 2011-08-03 |
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