DE60014797D1 - Oberflächenemittierender Laser mit vertikalem Resonator und lateraler Ladungsträgerinjektion - Google Patents
Oberflächenemittierender Laser mit vertikalem Resonator und lateraler LadungsträgerinjektionInfo
- Publication number
- DE60014797D1 DE60014797D1 DE2000614797 DE60014797T DE60014797D1 DE 60014797 D1 DE60014797 D1 DE 60014797D1 DE 2000614797 DE2000614797 DE 2000614797 DE 60014797 T DE60014797 T DE 60014797T DE 60014797 D1 DE60014797 D1 DE 60014797D1
- Authority
- DE
- Germany
- Prior art keywords
- emitting laser
- surface emitting
- charge injection
- vertical resonator
- lateral charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14473499P | 1999-07-21 | 1999-07-21 | |
US144734P | 1999-07-21 | ||
US09/605,342 US6493368B1 (en) | 1999-07-21 | 2000-06-28 | Lateral injection vertical cavity surface-emitting laser |
US605342 | 2000-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60014797D1 true DE60014797D1 (de) | 2004-11-18 |
DE60014797T2 DE60014797T2 (de) | 2005-10-13 |
Family
ID=26842307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60014797T Expired - Lifetime DE60014797T2 (de) | 1999-07-21 | 2000-07-17 | Oberflächenemittierender Laser mit vertikalem Resonator und lateraler Ladungsträgerinjektion |
Country Status (4)
Country | Link |
---|---|
US (1) | US6493368B1 (de) |
EP (1) | EP1073171B1 (de) |
JP (1) | JP3668105B2 (de) |
DE (1) | DE60014797T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6658040B1 (en) * | 2000-07-28 | 2003-12-02 | Agilent Technologies, Inc. | High speed VCSEL |
US6975661B2 (en) | 2001-06-14 | 2005-12-13 | Finisar Corporation | Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide |
JP3846367B2 (ja) * | 2002-05-30 | 2006-11-15 | セイコーエプソン株式会社 | 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器 |
WO2004034525A2 (en) * | 2002-10-11 | 2004-04-22 | Ziva Corporation | Current-controlled polarization switching vertical cavity surface emitting laser |
US6936486B2 (en) * | 2002-11-19 | 2005-08-30 | Jdsu Uniphase Corporation | Low voltage multi-junction vertical cavity surface emitting laser |
JP4069383B2 (ja) | 2003-03-18 | 2008-04-02 | 富士ゼロックス株式会社 | 表面発光型半導体レーザおよびその製造方法 |
US6906353B1 (en) | 2003-11-17 | 2005-06-14 | Jds Uniphase Corporation | High speed implanted VCSEL |
JP2006237467A (ja) * | 2005-02-28 | 2006-09-07 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
US20070217472A1 (en) * | 2006-03-14 | 2007-09-20 | Doug Collins | VCSEL semiconductor devices with mode control |
US7508858B2 (en) * | 2007-04-30 | 2009-03-24 | The Research Foundation Of State University Of New York | Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity |
JP5003416B2 (ja) * | 2007-11-06 | 2012-08-15 | 住友電気工業株式会社 | 面発光半導体レーザ |
WO2009119172A1 (ja) * | 2008-03-28 | 2009-10-01 | 日本電気株式会社 | 面発光レーザ |
WO2009119171A1 (ja) * | 2008-03-28 | 2009-10-01 | 日本電気株式会社 | 面発光レーザ |
KR100941616B1 (ko) * | 2008-05-15 | 2010-02-11 | 주식회사 에피밸리 | 반도체 발광소자 |
JP4872987B2 (ja) | 2008-08-25 | 2012-02-08 | ソニー株式会社 | 面発光型半導体レーザ |
JP2010199558A (ja) * | 2009-01-27 | 2010-09-09 | Panasonic Corp | 半導体装置およびその製造方法 |
US10244181B2 (en) | 2009-02-17 | 2019-03-26 | Trilumina Corp. | Compact multi-zone infrared laser illuminator |
US8995485B2 (en) | 2009-02-17 | 2015-03-31 | Trilumina Corp. | High brightness pulsed VCSEL sources |
US20130223846A1 (en) | 2009-02-17 | 2013-08-29 | Trilumina Corporation | High speed free-space optical communications |
US8995493B2 (en) | 2009-02-17 | 2015-03-31 | Trilumina Corp. | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
US10038304B2 (en) | 2009-02-17 | 2018-07-31 | Trilumina Corp. | Laser arrays for variable optical properties |
CA2784958C (en) * | 2009-12-19 | 2014-12-02 | Trilumina Corp. | System and method for combining laser arrays for digital outputs |
US8979338B2 (en) | 2009-12-19 | 2015-03-17 | Trilumina Corp. | System for combining laser array outputs into a single beam carrying digital data |
JP5573222B2 (ja) * | 2010-02-23 | 2014-08-20 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
US11095365B2 (en) | 2011-08-26 | 2021-08-17 | Lumentum Operations Llc | Wide-angle illuminator module |
JP2014170825A (ja) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | 量子カスケード半導体レーザ |
CN108141005B (zh) | 2015-07-30 | 2021-08-10 | 奥普蒂脉冲公司 | 刚性高功率和高速激光网格结构 |
US11456575B2 (en) * | 2017-08-28 | 2022-09-27 | Lumentum Operations Llc | Distributed oxide lens for beam shaping |
US10374705B2 (en) | 2017-09-06 | 2019-08-06 | Optipulse Inc. | Method and apparatus for alignment of a line-of-sight communications link |
CN113964648B (zh) * | 2021-10-20 | 2024-03-26 | 中国科学院半导体研究所 | 面发射半导体激光器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5245622A (en) | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
US5343487A (en) | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
JPH0770790B2 (ja) | 1992-11-27 | 1995-07-31 | 日本電気株式会社 | 面発光素子 |
US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
KR100259490B1 (ko) * | 1995-04-28 | 2000-06-15 | 윤종용 | 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치 |
NL1005570C2 (nl) * | 1997-03-19 | 1998-09-22 | Univ Eindhoven Tech | VCSEL-halfgeleiderinrichting. |
US6044100A (en) | 1997-12-23 | 2000-03-28 | Lucent Technologies Inc. | Lateral injection VCSEL |
US6169756B1 (en) * | 1997-12-23 | 2001-01-02 | Lucent Technologies Inc. | Vertical cavity surface-emitting laser with optical guide and current aperture |
-
2000
- 2000-06-28 US US09/605,342 patent/US6493368B1/en not_active Expired - Lifetime
- 2000-07-17 DE DE60014797T patent/DE60014797T2/de not_active Expired - Lifetime
- 2000-07-17 EP EP00306045A patent/EP1073171B1/de not_active Expired - Lifetime
- 2000-07-21 JP JP2000220014A patent/JP3668105B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1073171A2 (de) | 2001-01-31 |
DE60014797T2 (de) | 2005-10-13 |
US6493368B1 (en) | 2002-12-10 |
EP1073171B1 (de) | 2004-10-13 |
JP3668105B2 (ja) | 2005-07-06 |
JP2001135890A (ja) | 2001-05-18 |
EP1073171A3 (de) | 2002-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |