DE60016682D1 - Vorrichtung zur Photomaskeninspektion mittels Photolithographiesimulation - Google Patents

Vorrichtung zur Photomaskeninspektion mittels Photolithographiesimulation

Info

Publication number
DE60016682D1
DE60016682D1 DE60016682T DE60016682T DE60016682D1 DE 60016682 D1 DE60016682 D1 DE 60016682D1 DE 60016682 T DE60016682 T DE 60016682T DE 60016682 T DE60016682 T DE 60016682T DE 60016682 D1 DE60016682 D1 DE 60016682D1
Authority
DE
Germany
Prior art keywords
photomask inspection
photolithography simulation
photolithography
simulation
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60016682T
Other languages
English (en)
Other versions
DE60016682T2 (de
Inventor
Avner Karpol
Boaz Kenan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60016682D1 publication Critical patent/DE60016682D1/de
Publication of DE60016682T2 publication Critical patent/DE60016682T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
DE60016682T 1999-09-03 2000-08-31 Vorrichtung zur Photomaskeninspektion mittels Photolithographiesimulation Expired - Fee Related DE60016682T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/390,503 US6466315B1 (en) 1999-09-03 1999-09-03 Method and system for reticle inspection by photolithography simulation
US390503 1999-09-03

Publications (2)

Publication Number Publication Date
DE60016682D1 true DE60016682D1 (de) 2005-01-20
DE60016682T2 DE60016682T2 (de) 2005-12-08

Family

ID=23542727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016682T Expired - Fee Related DE60016682T2 (de) 1999-09-03 2000-08-31 Vorrichtung zur Photomaskeninspektion mittels Photolithographiesimulation

Country Status (4)

Country Link
US (1) US6466315B1 (de)
EP (1) EP1081489B1 (de)
JP (1) JP4668401B2 (de)
DE (1) DE60016682T2 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268093B1 (en) * 1999-10-13 2001-07-31 Applied Materials, Inc. Method for reticle inspection using aerial imaging
US6369888B1 (en) * 1999-11-17 2002-04-09 Applied Materials, Inc. Method and apparatus for article inspection including speckle reduction
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
JP3874996B2 (ja) * 2000-05-30 2007-01-31 ファブソリューション株式会社 デバイス検査方法および装置
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
KR100389133B1 (ko) * 2001-05-24 2003-06-25 삼성전자주식회사 반도체소자 제조용 노광장치 및 이의 구동방법
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
JP2003066341A (ja) * 2001-08-28 2003-03-05 Nec Corp レチクル検査装置
US7619735B2 (en) * 2002-01-15 2009-11-17 Applied Materials, Israel, Ltd. Optical inspection using variable apodization
US7236847B2 (en) 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
WO2003066282A2 (en) 2002-02-04 2003-08-14 Kla-Tencor Technologies Corp. Systems and methods for characterizing a polishing process
US7257247B2 (en) * 2002-02-21 2007-08-14 International Business Machines Corporation Mask defect analysis system
JP2003315973A (ja) * 2002-04-19 2003-11-06 Fujitsu Ltd マスク設計装置、マスク設計方法、プログラムおよび半導体装置製造方法
JP3729154B2 (ja) * 2002-05-10 2005-12-21 株式会社日立製作所 パターン欠陥検査方法及びその装置
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP4597859B2 (ja) * 2002-07-15 2010-12-15 ケーエルエー−テンカー コーポレイション マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置
US7046352B1 (en) * 2002-10-08 2006-05-16 Kla-Tencor Technologies Corporation Surface inspection system and method using summed light analysis of an inspection surface
US7123356B1 (en) 2002-10-15 2006-10-17 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging and die-to-database detection
US7379175B1 (en) 2002-10-15 2008-05-27 Kla-Tencor Technologies Corp. Methods and systems for reticle inspection and defect review using aerial imaging
US7027143B1 (en) * 2002-10-15 2006-04-11 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging at off-stepper wavelengths
US6829035B2 (en) * 2002-11-12 2004-12-07 Applied Materials Israel, Ltd. Advanced mask cleaning and handling
US7171034B2 (en) * 2002-12-03 2007-01-30 International Business Machines Corporation Method and system for phase/amplitude error detection of alternating phase shifting masks in photolithography
US20040225488A1 (en) * 2003-05-05 2004-11-11 Wen-Chuan Wang System and method for examining mask pattern fidelity
US7016027B2 (en) * 2003-05-08 2006-03-21 Infineon Technologies Ag System and method for quantifying errors in an alternating phase shift mask
DE10332059A1 (de) * 2003-07-11 2005-01-27 Carl Zeiss Sms Gmbh Verfahren zur Analyse von Objekten in der Mikrolithographie
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
DE10337037B4 (de) 2003-08-12 2006-02-23 Infineon Technologies Ag Verfahren zur Vermessung einer Belichtungsintensität auf einem Wafer
JP4758358B2 (ja) 2004-01-29 2011-08-24 ケーエルエー−テンカー コーポレイション レチクル設計データにおける欠陥を検出するためのコンピュータに実装される方法
JP4596801B2 (ja) * 2004-03-22 2010-12-15 株式会社東芝 マスク欠陥検査装置
DE102004023739A1 (de) * 2004-05-12 2005-12-15 Leica Microsystems Semiconductor Gmbh Messgerät und Verfahren zum Betreiben eines Messgeräts zur optischen Inspektion eines Objekts
JP4904034B2 (ja) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US7400390B2 (en) * 2004-11-29 2008-07-15 Applied Materials, Israel, Ltd. Inspection system and a method for aerial reticle inspection
JP2006162500A (ja) * 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 欠陥検査装置
US7583358B2 (en) * 2005-07-25 2009-09-01 Micron Technology, Inc. Systems and methods for retrieving residual liquid during immersion lens photolithography
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US7456928B2 (en) * 2005-08-29 2008-11-25 Micron Technology, Inc. Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
DE102005042496A1 (de) * 2005-09-05 2007-03-08 Carl Zeiss Sms Gmbh Verfahren zur Korrektur der Apodisierung in mikroskopischen Abbildungssystemen
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
JP4997748B2 (ja) * 2005-11-28 2012-08-08 凸版印刷株式会社 フォーカスモニターマークを有するフォトマスクの転写シミュレーション方法
US8472004B2 (en) * 2006-01-18 2013-06-25 Micron Technology, Inc. Immersion photolithography scanner
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
KR100791005B1 (ko) * 2006-12-01 2008-01-04 삼성전자주식회사 사입사 조건에서의 포토마스크의 투과율 측정장치 및 그를이용한 측정방법
TWI422962B (zh) * 2006-12-05 2014-01-11 Hoya Corp 灰階光罩之檢查方法、液晶裝置製造用灰階光罩之製造方法以及圖案轉印方法
US7877722B2 (en) 2006-12-19 2011-01-25 Kla-Tencor Corp. Systems and methods for creating inspection recipes
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
DE102007000981B4 (de) * 2007-02-22 2020-07-30 Vistec Semiconductor Systems Gmbh Vorrichtung und Verfahren zum Vermessen von Strukturen auf einer Maske und zur Berechnung der aus den Strukturen resultierenden Strukturen in einem Photoresist
JP2008249921A (ja) * 2007-03-30 2008-10-16 Advanced Mask Inspection Technology Kk レチクル欠陥検査装置およびレチクル欠陥検査方法
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
DE102007025306B9 (de) * 2007-05-30 2012-10-31 Vistec Semiconductor Systems Gmbh Koordinatenmess-Maschine und Verfahren zur Vermessung von Strukturen auf einem Substrat mittels einer Koordinaten-Messmaschine
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
JP5425779B2 (ja) 2007-08-20 2014-02-26 ケーエルエー−テンカー・コーポレーション 実際の欠陥が潜在的にシステム的な欠陥であるか、または潜在的にランダムな欠陥であるかを判断する、コンピューターに実装された方法
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
WO2010014609A2 (en) 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
DE102008048660B4 (de) * 2008-09-22 2015-06-18 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Strukturen auf Photolithographiemasken
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
NL2004428A (en) * 2009-04-13 2010-10-14 Asml Holding Nv Mask inspection with fourier filtering and image compare.
US8743368B2 (en) * 2009-11-12 2014-06-03 General Electric Company Optical sensor system and method of sensing
JP2012002676A (ja) * 2010-06-17 2012-01-05 Toshiba Corp マスク欠陥検査装置およびマスク欠陥検査方法
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
DE102010063337B9 (de) 2010-12-17 2020-05-07 Carl Zeiss Ag Verfahren zur Maskeninspektion sowie Verfahren zur Emulation von Abbildungseigenschaften
WO2012084142A1 (en) 2010-12-23 2012-06-28 Carl Zeiss Sms Gmbh Method for characterizing a structure on a mask and device for carrying out said method
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9255891B2 (en) * 2012-11-20 2016-02-09 Kla-Tencor Corporation Inspection beam shaping for improved detection sensitivity
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
WO2014149197A1 (en) 2013-02-01 2014-09-25 Kla-Tencor Corporation Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
JP6640482B2 (ja) 2015-07-31 2020-02-05 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
US10324045B2 (en) 2016-08-05 2019-06-18 Kla-Tencor Corporation Surface defect inspection with large particle monitoring and laser power control
JP6851178B2 (ja) * 2016-11-07 2021-03-31 株式会社ニューフレアテクノロジー パターン検査方法及びパターン検査装置
US20180329190A1 (en) * 2017-05-12 2018-11-15 Quality Vision International, Inc. Multi-Stop Illuminator for Video Inspection System with Stepped Aperture Settings
US11703460B2 (en) 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
JP6815469B2 (ja) * 2019-11-13 2021-01-20 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
EP4001903A1 (de) * 2020-11-19 2022-05-25 ASML Netherlands B.V. Inspektionsverfahren und inspektionswerkzeug

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233523B1 (de) 1971-02-18 1977-08-29
US4926489A (en) 1983-03-11 1990-05-15 Kla Instruments Corporation Reticle inspection system
US4595289A (en) 1984-01-25 1986-06-17 At&T Bell Laboratories Inspection system utilizing dark-field illumination
JPS61260211A (ja) * 1985-05-15 1986-11-18 Hitachi Ltd 自動異物検出方法及びその装置
US5210635A (en) 1989-04-17 1993-05-11 Dainippon Screen Mfg. Co., Ltd. Multibeam scanning system
JPH03266844A (ja) * 1990-03-16 1991-11-27 Nikon Corp 欠陥検査装置
US5563702A (en) 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
JPH0566556A (ja) * 1991-09-05 1993-03-19 Canon Inc 面状態検査装置
US5264912A (en) * 1992-02-07 1993-11-23 Tencor Instruments Speckle reduction track filter apparatus for optical inspection of patterned substrates
JP2667940B2 (ja) * 1992-04-27 1997-10-27 三菱電機株式会社 マスク検査方法およびマスク検出装置
JPH0728226A (ja) 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
US5838433A (en) 1995-04-19 1998-11-17 Nikon Corporation Apparatus for detecting defects on a mask
US5795688A (en) 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US6023328A (en) * 1998-02-23 2000-02-08 Micron Technology, Inc. Photomask inspection method and apparatus

Also Published As

Publication number Publication date
EP1081489A2 (de) 2001-03-07
DE60016682T2 (de) 2005-12-08
US6466315B1 (en) 2002-10-15
JP2001159810A (ja) 2001-06-12
JP4668401B2 (ja) 2011-04-13
EP1081489B1 (de) 2004-12-15
EP1081489A3 (de) 2002-05-15

Similar Documents

Publication Publication Date Title
DE60016682D1 (de) Vorrichtung zur Photomaskeninspektion mittels Photolithographiesimulation
DE50202016D1 (de) Vorrichtung zur entfernungsmessung
DE602004010961D1 (de) Lithographischer Apparat
DE50214485D1 (de) Vorrichtung zur entfernungsmessung
DE60219535D1 (de) Vorrichtung zur Überwachung eines Tieres
DE69938595D1 (de) Vorrichtung zur beurteilung mittels massenkommunikation
DE60134922D1 (de) Lithographischer Apparat
DE60324763D1 (de) Apparat zur Pupillen-Detektion
DE602005015052D1 (de) Vorrichtung zur Entwicklungsunterstützung
DE50107816D1 (de) Vorrichtung zur Lagerung eines optischen Elementes
DE50115767D1 (de) Vorrichtung zur überwachung eines prozessors
DE602004009122D1 (de) Vorrichtung zur Positionierung eines Patienten
DE60029719D1 (de) Vorrichtung zur fluoreszenzmessung
DE10193433T1 (de) Maskeninspektionsgerät
DE60131203D1 (de) Lithographischer Apparat
DE50108155D1 (de) Vorrichtung zur Lagerung eines optischen Elementes
DE60108029D1 (de) Vorrichtung zur Positionsbestimmung
DE60229487D1 (de) Vorrichtung zur Gasdurchflussmessung
DE60207134D1 (de) Apparat zur kombinatorischen Wägung
DE602004008009D1 (de) Lithographischer Apparat
DE60206005D1 (de) Vorrichtung zum Ausrichten eines ophthalmologischen Instruments
DE60139530D1 (de) Vorrichtung für Transachstest
DE602006011679D1 (de) Lithografischer Apparat und Herstellungsverfahren einer Vorrichtung
DE59904580D1 (de) Vorrichtung zur abstandsmessung
DE602004017411D1 (de) Lithographischer Apparat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee