DE60024291D1 - Verfahren und vorrichtung für die in-situ-messung von plasma-ätz-prozessen und plasma-abscheidungs-prozessen mit hilfe einer breitbandigen gepulsten lichtquelle - Google Patents

Verfahren und vorrichtung für die in-situ-messung von plasma-ätz-prozessen und plasma-abscheidungs-prozessen mit hilfe einer breitbandigen gepulsten lichtquelle

Info

Publication number
DE60024291D1
DE60024291D1 DE60024291T DE60024291T DE60024291D1 DE 60024291 D1 DE60024291 D1 DE 60024291D1 DE 60024291 T DE60024291 T DE 60024291T DE 60024291 T DE60024291 T DE 60024291T DE 60024291 D1 DE60024291 D1 DE 60024291D1
Authority
DE
Germany
Prior art keywords
plasma
processes
etz
banding
wide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60024291T
Other languages
English (en)
Other versions
DE60024291T2 (de
Inventor
Andrew Perry
S Mundt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23622206&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60024291(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60024291D1 publication Critical patent/DE60024291D1/de
Publication of DE60024291T2 publication Critical patent/DE60024291T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
DE60024291T 1999-09-30 2000-09-27 Verfahren und vorrichtung für die in-situ-messung von plasma-ätz-prozessen und plasma-abscheidungs-prozessen mit hilfe einer breitbandigen gepulsten lichtquelle Expired - Lifetime DE60024291T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/409,842 US6160621A (en) 1999-09-30 1999-09-30 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
US409842 1999-09-30
PCT/US2000/026613 WO2001023830A1 (en) 1999-09-30 2000-09-27 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source

Publications (2)

Publication Number Publication Date
DE60024291D1 true DE60024291D1 (de) 2005-12-29
DE60024291T2 DE60024291T2 (de) 2006-07-20

Family

ID=23622206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60024291T Expired - Lifetime DE60024291T2 (de) 1999-09-30 2000-09-27 Verfahren und vorrichtung für die in-situ-messung von plasma-ätz-prozessen und plasma-abscheidungs-prozessen mit hilfe einer breitbandigen gepulsten lichtquelle

Country Status (9)

Country Link
US (2) US6160621A (de)
EP (1) EP1218689B1 (de)
JP (3) JP4938948B2 (de)
KR (2) KR100782315B1 (de)
CN (1) CN1148563C (de)
AU (1) AU7619800A (de)
DE (1) DE60024291T2 (de)
ES (1) ES2250191T3 (de)
WO (1) WO2001023830A1 (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US7064828B1 (en) 2001-12-19 2006-06-20 Nanometrics Incorporated Pulsed spectroscopy with spatially variable polarization modulation element
KR100452918B1 (ko) * 2002-04-12 2004-10-14 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
US6849151B2 (en) * 2002-08-07 2005-02-01 Michael S. Barnes Monitoring substrate processing by detecting reflectively diffracted light
TWI314762B (en) * 2002-08-13 2009-09-11 Lam Res Corp Method for controlling a recess etch process
US7399711B2 (en) * 2002-08-13 2008-07-15 Lam Research Corporation Method for controlling a recess etch process
US6979578B2 (en) * 2002-08-13 2005-12-27 Lam Research Corporation Process endpoint detection method using broadband reflectometry
US7019844B2 (en) * 2002-08-13 2006-03-28 Lam Research Corporation Method for in-situ monitoring of patterned substrate processing using reflectometry.
US7869057B2 (en) 2002-09-09 2011-01-11 Zygo Corporation Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis
US7139081B2 (en) 2002-09-09 2006-11-21 Zygo Corporation Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US7306696B2 (en) 2002-11-01 2007-12-11 Applied Materials, Inc. Interferometric endpoint determination in a substrate etching process
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7106454B2 (en) 2003-03-06 2006-09-12 Zygo Corporation Profiling complex surface structures using scanning interferometry
US7324214B2 (en) 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US7292346B2 (en) 2003-09-15 2007-11-06 Zygo Corporation Triangulation methods and systems for profiling surfaces through a thin film coating
US20050070103A1 (en) * 2003-09-29 2005-03-31 Applied Materials, Inc. Method and apparatus for endpoint detection during an etch process
US7061613B1 (en) 2004-01-13 2006-06-13 Nanometrics Incorporated Polarizing beam splitter and dual detector calibration of metrology device having a spatial phase modulation
US20050211667A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Method and apparatus for measurement of thin films and residues on semiconductor substrates
US20050220984A1 (en) * 2004-04-02 2005-10-06 Applied Materials Inc., A Delaware Corporation Method and system for control of processing conditions in plasma processing systems
US7171334B2 (en) * 2004-06-01 2007-01-30 Brion Technologies, Inc. Method and apparatus for synchronizing data acquisition of a monitored IC fabrication process
US20060012796A1 (en) * 2004-07-14 2006-01-19 Susumu Saito Plasma treatment apparatus and light detection method of a plasma treatment
KR101006422B1 (ko) 2005-01-20 2011-01-06 지고 코포레이션 객체 표면의 특성을 결정하기 위한 간섭계
US7884947B2 (en) 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
US7442274B2 (en) * 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
CN101288035B (zh) * 2005-09-14 2013-06-19 马特森技术有限公司 可重复热处理的方法和设备
US7636168B2 (en) 2005-10-11 2009-12-22 Zygo Corporation Interferometry method and system including spectral decomposition
US8067727B2 (en) * 2006-04-24 2011-11-29 Space Micro Inc. Portable composite bonding inspection system
US20080003702A1 (en) 2006-06-28 2008-01-03 Cruse James P Low Power RF Tuning Using Optical and Non-Reflected Power Methods
CN101473211A (zh) * 2006-07-03 2009-07-01 和舰科技(苏州)有限公司 一种氮氧化硅薄膜的等离子处理程度的光学检测方法
WO2008011510A2 (en) 2006-07-21 2008-01-24 Zygo Corporation Compensation of systematic effects in low coherence interferometry
KR101519932B1 (ko) 2006-12-22 2015-05-13 지고 코포레이션 표면 특징물의 특성을 측정하기 위한 장치 및 방법
US7889355B2 (en) 2007-01-31 2011-02-15 Zygo Corporation Interferometry for lateral metrology
US7619746B2 (en) 2007-07-19 2009-11-17 Zygo Corporation Generating model signals for interferometry
US8072611B2 (en) 2007-10-12 2011-12-06 Zygo Corporation Interferometric analysis of under-resolved features
JP5222954B2 (ja) 2007-11-13 2013-06-26 ザイゴ コーポレーション 偏光スキャンを利用した干渉計
DE102007055260A1 (de) * 2007-11-20 2009-05-28 Robert Bosch Gmbh Verfahren zur Prüfung der Oberflächenbeständigkeit
EP2232195B1 (de) 2007-12-14 2015-03-18 Zygo Corporation Analyse der oberflächenstruktur unter verwendung von rasterinterferometrie
CN101990704B (zh) * 2008-04-03 2012-06-20 朗姆研究公司 用于归一化光学发射光谱的方法和装置
KR101106114B1 (ko) * 2008-06-20 2012-01-18 (주)쎄미시스코 원격의 외장형 분광기 연결 구조
US8004688B2 (en) 2008-11-26 2011-08-23 Zygo Corporation Scan error correction in low coherence scanning interferometry
CN101436530B (zh) * 2008-12-12 2012-01-18 上海宏力半导体制造有限公司 利用光学发射光谱特性对刻蚀过程进行监测的方法
US8274645B2 (en) * 2009-07-20 2012-09-25 Applied Materials, Inc. Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber
GB2478590A (en) * 2010-03-12 2011-09-14 Precitec Optronik Gmbh Apparatus and method for monitoring a thickness of a silicon wafer
US8834229B2 (en) * 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
US8609548B2 (en) 2011-06-06 2013-12-17 Lam Research Corporation Method for providing high etch rate
US8440473B2 (en) * 2011-06-06 2013-05-14 Lam Research Corporation Use of spectrum to synchronize RF switching with gas switching during etch
JP2013120063A (ja) * 2011-12-06 2013-06-17 Shimadzu Corp 表面処理状況モニタリング装置
CN102650588A (zh) * 2012-03-16 2012-08-29 京东方科技集团股份有限公司 监测溶液加工能力的方法及装置、刻蚀系统
JP5862433B2 (ja) 2012-04-09 2016-02-16 株式会社島津製作所 表面処理状況モニタリング装置
WO2014027354A1 (en) * 2012-08-15 2014-02-20 Nova Measuring Instruments Ltd. Optical metrology for in-situ measurements
CN103943447B (zh) * 2013-01-17 2017-02-08 中微半导体设备(上海)有限公司 一种等离子处理装置及其处理方法
DE102014107385A1 (de) * 2014-05-26 2015-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US9627186B2 (en) * 2014-08-29 2017-04-18 Lam Research Corporation System, method and apparatus for using optical data to monitor RF generator operations
KR101700391B1 (ko) * 2014-11-04 2017-02-13 삼성전자주식회사 펄스 플라즈마의 고속 광학적 진단 시스템
CN104465352B (zh) * 2014-11-28 2018-09-04 上海华力微电子有限公司 消除多晶硅刻蚀工艺中多晶硅残余的方法
US9870935B2 (en) * 2014-12-19 2018-01-16 Applied Materials, Inc. Monitoring system for deposition and method of operation thereof
WO2016204920A1 (en) 2015-06-18 2016-12-22 Applied Materials, Inc. In-situ metrology method for thickness measurement during pecvd processes
CN106876238B (zh) * 2015-12-10 2021-01-19 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的装置和方法
CN106876236B (zh) * 2015-12-10 2018-11-20 中微半导体设备(上海)有限公司 监测等离子体工艺制程的装置和方法
JP6650258B2 (ja) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
CN107546094B (zh) * 2016-06-28 2019-05-03 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的等离子体处理装置和方法
CN107546141B (zh) * 2016-06-28 2020-12-04 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的装置和方法
US10365212B2 (en) * 2016-11-14 2019-07-30 Verity Instruments, Inc. System and method for calibration of optical signals in semiconductor process systems
JP6837886B2 (ja) 2017-03-21 2021-03-03 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
DE102017204861A1 (de) * 2017-03-23 2018-09-27 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen eines Materialabtrags und Vorrichtung zur Strahlbearbeitung eines Werkstücks
US11424115B2 (en) * 2017-03-31 2022-08-23 Verity Instruments, Inc. Multimode configurable spectrometer
US10473627B2 (en) * 2017-04-28 2019-11-12 GM Global Technology Operations LLC Portable acoustic apparatus for in-situ monitoring of a workpiece
US10636686B2 (en) 2018-02-27 2020-04-28 Lam Research Corporation Method monitoring chamber drift
US10978278B2 (en) * 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor
CN111801774B (zh) 2019-02-08 2023-06-23 株式会社日立高新技术 蚀刻处理装置、蚀刻处理方法及检测器
KR20210031023A (ko) 2019-09-10 2021-03-19 삼성전자주식회사 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치
US11442021B2 (en) * 2019-10-11 2022-09-13 Kla Corporation Broadband light interferometry for focal-map generation in photomask inspection
JP7012900B1 (ja) 2020-03-11 2022-01-28 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
CN112151364A (zh) * 2020-09-27 2020-12-29 北京北方华创微电子装备有限公司 半导体反应腔室
CN115349164A (zh) 2021-03-15 2022-11-15 株式会社日立高新技术 等离子处理装置以及等离子处理方法
JP7423854B1 (ja) 2022-03-04 2024-01-29 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理装置
CN114877816B (zh) * 2022-05-10 2023-06-30 湘潭大学 一种应用于ipem系统闪烁体薄膜厚度及均匀性的测量方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080076A (en) 1976-07-28 1978-03-21 Optronix Inc. Suspended solids analyzer using multiple light sources and photodetectors
DE3135653C2 (de) * 1981-09-09 1985-02-14 Henn Dr. 2110 Buchholz Pohlhausen Vorrichtung zur Aufzucht von bodenbewohnenden Wasserorganismen
US4726679A (en) 1986-03-03 1988-02-23 The Perkin-Elmer Corporation Flame atomic absorption spectrophtometer including apparatus and method for logarithmic conversion
EP0396010A3 (de) * 1989-05-05 1991-03-27 Applied Materials, Inc. Verfahren und Vorrichtung zur Überwachung der Wachstums- und Ätzgeschwindigkeit von Materialien
US4968142A (en) * 1989-06-02 1990-11-06 The United States Of America As Represented By The United States Department Of Energy Closed inductively coupled plasma cell
US5255089A (en) 1992-03-26 1993-10-19 International Business Machines Corporation Portable particle detector assembly
US5461236A (en) * 1992-06-09 1995-10-24 Herbert R. Gram Oil spill detection system
WO1994002832A1 (en) * 1992-07-15 1994-02-03 On-Line Technologies, Inc. Method and apparatus for monitoring layer processing
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5880823A (en) * 1994-06-10 1999-03-09 Lu; Chih-Shun Method and apparatus for measuring atomic vapor density in deposition systems
DE69510032T2 (de) * 1995-03-31 2000-01-27 Ibm Verfahren und Gerät zur Überwachung des Trockenätzens eines dielektrischen Films bis zu einer gegebenen Dicke
FR2737560B1 (fr) * 1995-08-02 1997-09-19 Sofie Instr Procede et dispositif pour quantifier in situ, par reflectometrie, la morphologie d'une zone localisee lors de la gravure de la couche superficielle d'une structure a couches minces
JPH09283497A (ja) * 1996-04-18 1997-10-31 Ricoh Co Ltd ドライエッチングの終点検出方法
JP3329685B2 (ja) * 1996-05-16 2002-09-30 株式会社東芝 計測装置および計測方法
FR2760085B1 (fr) * 1997-02-26 1999-05-14 Instruments Sa Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
JPH1114312A (ja) * 1997-06-24 1999-01-22 Toshiba Corp 成膜装置及びエッチング装置
JPH11307604A (ja) * 1998-04-17 1999-11-05 Toshiba Corp プロセスモニタ方法及びプロセス装置

Also Published As

Publication number Publication date
JP4938948B2 (ja) 2012-05-23
JP2011238957A (ja) 2011-11-24
USRE39145E1 (en) 2006-06-27
ES2250191T3 (es) 2006-04-16
JP2004507070A (ja) 2004-03-04
CN1377457A (zh) 2002-10-30
EP1218689A1 (de) 2002-07-03
DE60024291T2 (de) 2006-07-20
CN1148563C (zh) 2004-05-05
AU7619800A (en) 2001-04-30
WO2001023830A1 (en) 2001-04-05
KR20070087193A (ko) 2007-08-27
KR100782315B1 (ko) 2007-12-06
JP2011238958A (ja) 2011-11-24
KR20020035159A (ko) 2002-05-09
KR100797420B1 (ko) 2008-01-23
US6160621A (en) 2000-12-12
EP1218689B1 (de) 2005-11-23

Similar Documents

Publication Publication Date Title
DE60024291D1 (de) Verfahren und vorrichtung für die in-situ-messung von plasma-ätz-prozessen und plasma-abscheidungs-prozessen mit hilfe einer breitbandigen gepulsten lichtquelle
DE69825138D1 (de) Verfahren und Vorrichtung zum Herstellen von dünnen Schichten einer Metallverbindung
DE69815609D1 (de) Verfahren und Vorrichtung zum Befördern einer Messvorrichtung im Bohrloch
DE69936472D1 (de) Verfahren und Vorrichtung zum Steuern einer Anzeigevorrichtung
DE69834306D1 (de) Vorrichtung und Verfahren zum Auftrag einer Beschichtung
DE60028691D1 (de) Vorrichtung und Verfahren zum Anzeigen einer Karte
DE69612930T2 (de) Verfahren und Vorrichtung für die Reinigung von Werkstücken
DE19681268T1 (de) Vorrichtung und Verfahren zur Vorgabe einer hochgenauen Kalibrierung von Werkzeugmaschinen
DE19681744T1 (de) Verfahren und Vorrichtung zum Charakterisieren einer Oberfläche
DE69934081D1 (de) Verfahren und vorrichtung zum biegen einer glasplatte
DE69812535D1 (de) Verfahren und Vorrichtung zum Auftrag einer wasserabweisenden Beschichtung
DE69531000T2 (de) Verfahren und vorrichtung zum herstellen einer kontinuierlichen stoffbahn
DE60036064D1 (de) Verfahren und Vorrichtung zum Bearbeiten einer Kolonne
DE50015074D1 (de) Verfahren und Vorrichtung zur Überwachung des von einer Beleuchtungsvorrichtung abgestrahlten Lichtes für ein optisches Messgerät
DE60206455D1 (de) Verfahren und Vorrichtung zum Positionieren von Reifenaufbautrommeln in einer automatischen Reifenherstellungsanlage
DE60009616D1 (de) Verfahren und Vorrichtung zur Erkennung von einer Mehrfachzufuhr
DE19680710T1 (de) Vorrichtung und Verfahren zum Ausführen einer Myringotomie
DE60205357D1 (de) Verfahren und vorrichtung zum biegen einer glassplatte
DE60102497D1 (de) Verfahren und Vorrichtung zum Nachverfolgen einer Transaktion über ein Mehrstreckennetzwerk
DE59810368D1 (de) Verfahren und vorrichtung zur in-situ-formulierung einer arzneistofflösung zur parenteralen applikation
DE50303989D1 (de) Verfahren und vorrichtung zur drehrichtungsüberwachung einer kolbenmaschine
DE60022160D1 (de) Vorrichtung zum biegen einer glasscheibe und verfahren zum biegen einer glasscheibe
DE69933607D1 (de) Verfahren und Vorrichtung zum Auftragen einer Probe
DE69837204D1 (de) Verfahren und vorrichtung zum abbilden der parameterdifferenz einer probenoberfläche
DE602004030409D1 (de) Verfahren und Vorrichtung zum Auswählen einer Quelle

Legal Events

Date Code Title Description
8364 No opposition during term of opposition