DE60032793D1 - Kristallines galliumnitrid und herstellungsverfahren - Google Patents

Kristallines galliumnitrid und herstellungsverfahren

Info

Publication number
DE60032793D1
DE60032793D1 DE60032793T DE60032793T DE60032793D1 DE 60032793 D1 DE60032793 D1 DE 60032793D1 DE 60032793 T DE60032793 T DE 60032793T DE 60032793 T DE60032793 T DE 60032793T DE 60032793 D1 DE60032793 D1 DE 60032793D1
Authority
DE
Germany
Prior art keywords
gallium nitride
capsule
providing
source
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60032793T
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English (en)
Other versions
DE60032793T2 (de
Inventor
Evelyn Philip D
Jean Narang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
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Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23637257&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60032793(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE60032793D1 publication Critical patent/DE60032793D1/de
Application granted granted Critical
Publication of DE60032793T2 publication Critical patent/DE60032793T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
DE60032793T 1999-10-06 2000-09-28 Kristallines galliumnitrid und herstellungsverfahren Expired - Lifetime DE60032793T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US413446 1999-10-06
US09/413,446 US6398867B1 (en) 1999-10-06 1999-10-06 Crystalline gallium nitride and method for forming crystalline gallium nitride
PCT/US2000/026704 WO2001024921A1 (en) 1999-10-06 2000-09-28 Crystalline gallium nitride and method for forming crystalline gallium nitride

Publications (2)

Publication Number Publication Date
DE60032793D1 true DE60032793D1 (de) 2007-02-15
DE60032793T2 DE60032793T2 (de) 2007-11-08

Family

ID=23637257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60032793T Expired - Lifetime DE60032793T2 (de) 1999-10-06 2000-09-28 Kristallines galliumnitrid und herstellungsverfahren

Country Status (10)

Country Link
US (1) US6398867B1 (de)
EP (1) EP1230005B1 (de)
JP (1) JP4942270B2 (de)
KR (1) KR100762019B1 (de)
AT (1) ATE350143T1 (de)
AU (1) AU7729700A (de)
CA (1) CA2385713A1 (de)
DE (1) DE60032793T2 (de)
TW (1) TWI272122B (de)
WO (1) WO2001024921A1 (de)

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