DE60035307D1 - Gedruckte Schaltung mit eingebautem Kondensator, Substrat mit gedruckter Schaltung und Kondensator - Google Patents

Gedruckte Schaltung mit eingebautem Kondensator, Substrat mit gedruckter Schaltung und Kondensator

Info

Publication number
DE60035307D1
DE60035307D1 DE60035307T DE60035307T DE60035307D1 DE 60035307 D1 DE60035307 D1 DE 60035307D1 DE 60035307 T DE60035307 T DE 60035307T DE 60035307 T DE60035307 T DE 60035307T DE 60035307 D1 DE60035307 D1 DE 60035307D1
Authority
DE
Germany
Prior art keywords
capacitor
printed circuit
built
substrate
printed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035307T
Other languages
English (en)
Other versions
DE60035307T2 (de
Inventor
Kouki Ogawa
Eiji Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Application granted granted Critical
Publication of DE60035307D1 publication Critical patent/DE60035307D1/de
Publication of DE60035307T2 publication Critical patent/DE60035307T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/232Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/236Terminals leading through the housing, i.e. lead-through
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0231Capacitors or dielectric substances
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/183Components mounted in and supported by recessed areas of the printed circuit board
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16265Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16265Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
    • H01L2224/16268Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19102Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19103Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19102Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19106Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10507Involving several components
    • H05K2201/10515Stacked components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10507Involving several components
    • H05K2201/1053Mounted components directly electrically connected to each other, i.e. not via the PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04Soldering or other types of metallurgic bonding
    • H05K2203/047Soldering with different solders, e.g. two different solders on two sides of the PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4602Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
DE60035307T 1999-03-30 2000-03-29 Gedruckte Schaltung mit eingebautem Kondensator, Substrat mit gedruckter Schaltung und Kondensator Expired - Lifetime DE60035307T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8949099 1999-03-30
JP8949099 1999-03-30
JP21688799 1999-07-30
JP21688799A JP3792445B2 (ja) 1999-03-30 1999-07-30 コンデンサ付属配線基板

Publications (2)

Publication Number Publication Date
DE60035307D1 true DE60035307D1 (de) 2007-08-09
DE60035307T2 DE60035307T2 (de) 2008-03-06

Family

ID=26430907

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035307T Expired - Lifetime DE60035307T2 (de) 1999-03-30 2000-03-29 Gedruckte Schaltung mit eingebautem Kondensator, Substrat mit gedruckter Schaltung und Kondensator

Country Status (6)

Country Link
US (2) US6952049B1 (de)
EP (2) EP1041631B1 (de)
JP (1) JP3792445B2 (de)
DE (1) DE60035307T2 (de)
RU (1) RU2411291C2 (de)
TW (1) TWI224486B (de)

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869870B2 (en) * 1998-12-21 2005-03-22 Megic Corporation High performance system-on-chip discrete components using post passivation process
JP4012652B2 (ja) * 1999-07-22 2007-11-21 京セラ株式会社 半導体装置
US6400574B1 (en) * 2000-05-11 2002-06-04 Micron Technology, Inc. Molded ball grid array
US7247932B1 (en) * 2000-05-19 2007-07-24 Megica Corporation Chip package with capacitor
JP4753470B2 (ja) * 2000-12-27 2011-08-24 イビデン株式会社 コンデンサ、多層プリント配線板および多層プリント配線板の製造方法
JP4859270B2 (ja) * 2000-12-27 2012-01-25 イビデン株式会社 コンデンサ、多層プリント配線板および多層プリント配線板の製造方法
TW575949B (en) 2001-02-06 2004-02-11 Hitachi Ltd Mixed integrated circuit device, its manufacturing method and electronic apparatus
KR100411811B1 (ko) * 2001-04-02 2003-12-24 앰코 테크놀로지 코리아 주식회사 반도체패키지
US6608375B2 (en) 2001-04-06 2003-08-19 Oki Electric Industry Co., Ltd. Semiconductor apparatus with decoupling capacitor
US6657133B1 (en) * 2001-05-15 2003-12-02 Xilinx, Inc. Ball grid array chip capacitor structure
US20020175402A1 (en) * 2001-05-23 2002-11-28 Mccormack Mark Thomas Structure and method of embedding components in multi-layer substrates
KR20030012238A (ko) * 2001-07-31 2003-02-12 주식회사 글로텍 수동소자 내장형 패키지
JP3492348B2 (ja) 2001-12-26 2004-02-03 新光電気工業株式会社 半導体装置用パッケージの製造方法
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
TW503496B (en) * 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
JP2003347741A (ja) * 2002-05-30 2003-12-05 Taiyo Yuden Co Ltd 複合多層基板およびそれを用いたモジュール
WO2004015771A2 (en) * 2002-08-09 2004-02-19 Casio Computer Co., Ltd. Semiconductor device and method of manufacturing the same
JP4243117B2 (ja) * 2002-08-27 2009-03-25 新光電気工業株式会社 半導体パッケージとその製造方法および半導体装置
TW575931B (en) * 2002-10-07 2004-02-11 Advanced Semiconductor Eng Bridge connection type of chip package and process thereof
TWI277992B (en) * 2002-10-30 2007-04-01 Matsushita Electric Ind Co Ltd Sheet capacitor, IC socket using the same, and manufacturing method of sheet capacitor
US7298046B2 (en) * 2003-01-10 2007-11-20 Kyocera America, Inc. Semiconductor package having non-ceramic based window frame
US20040160753A1 (en) * 2003-01-10 2004-08-19 Vrtis Joan K. System and method for packaging electronic components
JP4489411B2 (ja) * 2003-01-23 2010-06-23 新光電気工業株式会社 電子部品実装構造の製造方法
JP4137659B2 (ja) * 2003-02-13 2008-08-20 新光電気工業株式会社 電子部品実装構造及びその製造方法
CN101373783B (zh) * 2003-03-10 2010-06-23 浜松光子学株式会社 光电二极管阵列及其制造方法
US7327554B2 (en) 2003-03-19 2008-02-05 Ngk Spark Plug Co., Ltd. Assembly of semiconductor device, interposer and substrate
KR100778597B1 (ko) * 2003-06-03 2007-11-22 가시오게산키 가부시키가이샤 적층 반도체 장치와 그 제조방법
JP4377617B2 (ja) 2003-06-20 2009-12-02 日本特殊陶業株式会社 コンデンサ、コンデンサ付き半導体素子、コンデンサ付き配線基板、および、半導体素子とコンデンサと配線基板とを備える電子ユニット
JP2005039217A (ja) * 2003-06-24 2005-02-10 Ngk Spark Plug Co Ltd 中間基板
JP2005039243A (ja) 2003-06-24 2005-02-10 Ngk Spark Plug Co Ltd 中間基板
US7271476B2 (en) 2003-08-28 2007-09-18 Kyocera Corporation Wiring substrate for mounting semiconductor components
JP2005129899A (ja) * 2003-08-28 2005-05-19 Kyocera Corp 配線基板および半導体装置
TWI221336B (en) * 2003-08-29 2004-09-21 Advanced Semiconductor Eng Integrated circuit with embedded passive component in flip-chip connection and method for manufacturing the same
US7112524B2 (en) * 2003-09-29 2006-09-26 Phoenix Precision Technology Corporation Substrate for pre-soldering material and fabrication method thereof
US7265446B2 (en) * 2003-10-06 2007-09-04 Elpida Memory, Inc. Mounting structure for semiconductor parts and semiconductor device
TWI278048B (en) * 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
US20050270748A1 (en) * 2003-12-16 2005-12-08 Phoenix Precision Technology Corporation Substrate structure integrated with passive components
JP4343082B2 (ja) * 2003-12-25 2009-10-14 アルプス電気株式会社 電子回路ユニット、及びその製造方法
KR100541655B1 (ko) * 2004-01-07 2006-01-11 삼성전자주식회사 패키지 회로기판 및 이를 이용한 패키지
JP4841806B2 (ja) * 2004-02-02 2011-12-21 新光電気工業株式会社 キャパシタ装置とそれを備えた半導体装置、及びキャパシタ装置の製造方法
EP1677349A4 (de) * 2004-02-24 2010-12-01 Ibiden Co Ltd Substrat zur anbringung eines halbleiters
JP3925809B2 (ja) * 2004-03-31 2007-06-06 カシオ計算機株式会社 半導体装置およびその製造方法
TWI309456B (en) * 2004-04-27 2009-05-01 Advanced Semiconductor Eng Chip package structure and process for fabricating the same
CN100367491C (zh) * 2004-05-28 2008-02-06 日本特殊陶业株式会社 中间基板
CN100576979C (zh) * 2004-06-25 2009-12-30 揖斐电株式会社 印刷配线板及其制造方法
DE102004031878B3 (de) * 2004-07-01 2005-10-06 Epcos Ag Elektrisches Mehrschichtbauelement mit zuverlässigem Lötkontakt
US7375288B1 (en) * 2004-07-30 2008-05-20 Intel Corp. Apparatuses and methods for improving ball-grid-array solder joint reliability
KR100688501B1 (ko) * 2004-09-10 2007-03-02 삼성전자주식회사 미러링 구조를 갖는 스택 boc 패키지 및 이를 장착한양면 실장형 메모리 모듈
US7123465B2 (en) 2004-09-24 2006-10-17 Silicon Bandwidth, Inc. Decoupling capacitor for an integrated circuit and method of manufacturing thereof
KR100573302B1 (ko) * 2004-10-07 2006-04-24 삼성전자주식회사 와이어 본딩을 이용한 패키지 스택 및 그 제조 방법
TWI242855B (en) * 2004-10-13 2005-11-01 Advanced Semiconductor Eng Chip package structure, package substrate and manufacturing method thereof
US7420282B2 (en) * 2004-10-18 2008-09-02 Sharp Kabushiki Kaisha Connection structure for connecting semiconductor element and wiring board, and semiconductor device
US7105920B2 (en) * 2004-11-12 2006-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design to improve chip package reliability
WO2006053118A2 (en) * 2004-11-12 2006-05-18 Analog Devices, Inc. Spaced, bumped component structure
TWI283050B (en) * 2005-02-04 2007-06-21 Phoenix Prec Technology Corp Substrate structure embedded method with semiconductor chip and the method for making the same
TWI414218B (zh) 2005-02-09 2013-11-01 Ngk Spark Plug Co 配線基板及配線基板內建用之電容器
US7294904B1 (en) * 2005-02-10 2007-11-13 Xilinx, Inc. Integrated circuit package with improved return loss
EP1878050A1 (de) 2005-04-28 2008-01-16 Nxp B.V. Integrierte schaltungsanordnung mit substrat zur passiven integration zum routing von strom- und erdleitungen auf einem integrierten schaltungschip
US7696442B2 (en) 2005-06-03 2010-04-13 Ngk Spark Plug Co., Ltd. Wiring board and manufacturing method of wiring board
US20080023821A1 (en) * 2005-07-20 2008-01-31 Shih-Ping Hsu Substrate structure integrated with passive components
US20080024998A1 (en) * 2005-07-20 2008-01-31 Shih-Ping Hsu Substrate structure integrated with passive components
CN1901163B (zh) 2005-07-22 2011-04-13 米辑电子股份有限公司 连续电镀制作线路组件的方法及线路组件结构
TW200721426A (en) * 2005-07-25 2007-06-01 Koninkl Philips Electronics Nv Air cavity package for flip-chip
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
US7358615B2 (en) 2005-09-30 2008-04-15 Intel Corporation Microelectronic package having multiple conductive paths through an opening in a support substrate
US7705423B2 (en) 2005-10-21 2010-04-27 Georgia Tech Research Corporation Device having an array of embedded capacitors for power delivery and decoupling of high speed input/output circuitry of an integrated circuit
US7718904B2 (en) * 2005-11-15 2010-05-18 Intel Corporation Enhancing shock resistance in semiconductor packages
JP2007201254A (ja) * 2006-01-27 2007-08-09 Ibiden Co Ltd 半導体素子内蔵基板、半導体素子内蔵型多層回路基板
US7791192B1 (en) * 2006-01-27 2010-09-07 Xilinx, Inc. Circuit for and method of implementing a capacitor in an integrated circuit
JP2008016630A (ja) * 2006-07-06 2008-01-24 Matsushita Electric Ind Co Ltd プリント配線板およびその製造方法
US20090273004A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Chip package structure and method of making the same
JP4920335B2 (ja) * 2006-08-07 2012-04-18 新光電気工業株式会社 キャパシタ内蔵インターポーザ及びその製造方法と電子部品装置
JP4783692B2 (ja) * 2006-08-10 2011-09-28 新光電気工業株式会社 キャパシタ内蔵基板及びその製造方法と電子部品装置
TWI304719B (en) * 2006-10-25 2008-12-21 Phoenix Prec Technology Corp Circuit board structure having embedded compacitor and fabrication method thereof
US20080116564A1 (en) * 2006-11-21 2008-05-22 Advanced Chip Engineering Technology Inc. Wafer level package with die receiving cavity and method of the same
KR100840790B1 (ko) * 2006-11-29 2008-06-23 삼성전자주식회사 반도체 모듈 및 그의 제조 방법
US8178963B2 (en) * 2007-01-03 2012-05-15 Advanced Chip Engineering Technology Inc. Wafer level package with die receiving through-hole and method of the same
US8178964B2 (en) * 2007-03-30 2012-05-15 Advanced Chip Engineering Technology, Inc. Semiconductor device package with die receiving through-hole and dual build-up layers over both side-surfaces for WLP and method of the same
US7812434B2 (en) * 2007-01-03 2010-10-12 Advanced Chip Engineering Technology Inc Wafer level package with die receiving through-hole and method of the same
US20080197469A1 (en) * 2007-02-21 2008-08-21 Advanced Chip Engineering Technology Inc. Multi-chips package with reduced structure and method for forming the same
US8159828B2 (en) * 2007-02-23 2012-04-17 Alpha & Omega Semiconductor, Inc. Low profile flip chip power module and method of making
DE102007020475A1 (de) * 2007-04-27 2008-11-06 Häusermann GmbH Verfahren zur Herstellung einer Leiterplatte mit einer Kavität für die Integration von Bauteilen und Leiterplatte und Anwendung
KR100835061B1 (ko) * 2007-06-11 2008-06-03 삼성전기주식회사 반도체 칩 패키지
TW200910541A (en) * 2007-08-21 2009-03-01 Advanced Semiconductor Eng Package structure and manufacturing method thereof
KR100882608B1 (ko) * 2007-09-28 2009-02-12 삼성전기주식회사 캐비티 캐패시터의 제작 방법 및 캐비티 캐패시터가 내장된인쇄회로기판
US8035216B2 (en) * 2008-02-22 2011-10-11 Intel Corporation Integrated circuit package and method of manufacturing same
JP2008153699A (ja) * 2008-03-10 2008-07-03 Fujitsu Ltd 半導体装置及びその製造方法
JP5005603B2 (ja) * 2008-04-03 2012-08-22 新光電気工業株式会社 半導体装置及びその製造方法
US8395902B2 (en) * 2008-05-21 2013-03-12 International Business Machines Corporation Modular chip stack and packaging technology with voltage segmentation, regulation, integrated decoupling capacitance and cooling structure and process
JP5367306B2 (ja) * 2008-06-10 2013-12-11 日本特殊陶業株式会社 セラミック部品の製造方法
KR20100037300A (ko) * 2008-10-01 2010-04-09 삼성전자주식회사 내장형 인터포저를 갖는 반도체장치의 형성방법
WO2010041621A1 (ja) * 2008-10-06 2010-04-15 日本電気株式会社 機能素子内蔵基板及びその製造方法、並びに電子機器
JP2010114434A (ja) * 2008-10-08 2010-05-20 Ngk Spark Plug Co Ltd 部品内蔵配線基板及びその製造方法
KR100986832B1 (ko) * 2009-01-05 2010-10-12 삼성전기주식회사 전자소자 내장형 인쇄회로기판 및 그 제조방법
US8927872B2 (en) * 2009-02-20 2015-01-06 Telefonaktiebolaget L M Ericsson (Publ) Thermal pad and method of forming the same
JP2010238691A (ja) * 2009-03-30 2010-10-21 Fujitsu Ltd 中継部材およびプリント基板ユニット
JP4947388B2 (ja) * 2009-03-31 2012-06-06 Tdk株式会社 電子部品内蔵モジュール
JP5372579B2 (ja) * 2009-04-10 2013-12-18 新光電気工業株式会社 半導体装置及びその製造方法、並びに電子装置
US20100289104A1 (en) * 2009-05-14 2010-11-18 Optopac Co., Ltd. Photosensor package
JP5280945B2 (ja) * 2009-06-19 2013-09-04 新光電気工業株式会社 半導体装置及びその製造方法
JP5280309B2 (ja) * 2009-07-17 2013-09-04 新光電気工業株式会社 半導体装置及びその製造方法
KR101079429B1 (ko) * 2009-09-11 2011-11-02 삼성전기주식회사 디바이스 패키지 기판 및 그 제조 방법
JP4930567B2 (ja) * 2009-10-02 2012-05-16 富士通株式会社 中継基板、プリント基板ユニットおよび中継基板の製造方法
US8211833B2 (en) 2010-06-04 2012-07-03 Ambature, Llc Extremely low resistance composition and methods for creating same
JP4930566B2 (ja) * 2009-10-02 2012-05-16 富士通株式会社 中継基板、プリント基板ユニット、および、中継基板の製造方法
WO2011041765A1 (en) * 2009-10-02 2011-04-07 Ambature L.L.C. High temperature superconducting materials and methods for modifying and creating same
CN102714216B (zh) * 2009-10-02 2016-05-11 阿姆巴托雷有限责任公司 极低电阻膜及使其改性的方法或产生方法
JP5352437B2 (ja) * 2009-11-30 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101095130B1 (ko) * 2009-12-01 2011-12-16 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
US8654538B2 (en) * 2010-03-30 2014-02-18 Ibiden Co., Ltd. Wiring board and method for manufacturing the same
US8558392B2 (en) * 2010-05-14 2013-10-15 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
US8913402B1 (en) * 2010-05-20 2014-12-16 American Semiconductor, Inc. Triple-damascene interposer
JP5960383B2 (ja) 2010-06-01 2016-08-02 スリーエム イノベイティブ プロパティズ カンパニー 接触子ホルダ
US8404620B2 (en) 2011-03-30 2013-03-26 Ambature, Llc Extremely low resistance compositions and methods for creating same
JP2012009586A (ja) * 2010-06-24 2012-01-12 Shinko Electric Ind Co Ltd 配線基板、半導体装置及び配線基板の製造方法
KR101710178B1 (ko) 2010-06-29 2017-02-24 삼성전자 주식회사 임베디이드 칩 온 칩 패키지 및 이를 포함하는 패키지 온 패키지
DE102010025966B4 (de) 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
US20190157218A1 (en) * 2010-07-02 2019-05-23 Schott Ag Interposer and method for producing holes in an interposer
US9337116B2 (en) * 2010-10-28 2016-05-10 Stats Chippac, Ltd. Semiconductor device and method of forming stepped interposer for stacking and electrically connecting semiconductor die
JP5512558B2 (ja) * 2011-01-14 2014-06-04 日本特殊陶業株式会社 部品内蔵配線基板の製造方法
JP6157048B2 (ja) * 2011-02-01 2017-07-05 スリーエム イノベイティブ プロパティズ カンパニー Icデバイス用ソケット
US8338294B2 (en) 2011-03-31 2012-12-25 Soitec Methods of forming bonded semiconductor structures including two or more processed semiconductor structures carried by a common substrate, and semiconductor structures formed by such methods
US20120248621A1 (en) * 2011-03-31 2012-10-04 S.O.I.Tec Silicon On Insulator Technologies Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods
JP2012256675A (ja) * 2011-06-08 2012-12-27 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びその製造方法
EP4050649A1 (de) 2011-08-16 2022-08-31 Intel Corporation Versetzte zwischenglieder für pakete mit grosser fläche und paket-auf-paket-strukturen mit grossen vorlagen
US8988895B2 (en) * 2011-08-23 2015-03-24 Tessera, Inc. Interconnection elements with encased interconnects
JP5754333B2 (ja) * 2011-09-30 2015-07-29 イビデン株式会社 多層プリント配線板及び多層プリント配線板の製造方法
US8633398B2 (en) 2011-10-25 2014-01-21 Hewlett-Packard Development Company, L.P. Circuit board contact pads
JP5977021B2 (ja) * 2011-11-30 2016-08-24 日本電波工業株式会社 表面実装型圧電発振器
US20130154106A1 (en) 2011-12-14 2013-06-20 Broadcom Corporation Stacked Packaging Using Reconstituted Wafers
WO2013095339A1 (en) 2011-12-19 2013-06-27 Intel Corporation Pin grid interposer
US9691636B2 (en) * 2012-02-02 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Interposer frame and method of manufacturing the same
US8587132B2 (en) 2012-02-21 2013-11-19 Broadcom Corporation Semiconductor package including an organic substrate and interposer having through-semiconductor vias
US8558395B2 (en) * 2012-02-21 2013-10-15 Broadcom Corporation Organic interface substrate having interposer with through-semiconductor vias
US8749072B2 (en) 2012-02-24 2014-06-10 Broadcom Corporation Semiconductor package with integrated selectively conductive film interposer
US20130249101A1 (en) * 2012-03-23 2013-09-26 Stats Chippac, Ltd. Semiconductor Method of Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units
US10049964B2 (en) 2012-03-23 2018-08-14 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming a fan-out PoP device with PWB vertical interconnect units
US9837303B2 (en) * 2012-03-23 2017-12-05 STATS ChipPAC Pte. Ltd. Semiconductor method and device of forming a fan-out device with PWB vertical interconnect units
US9842798B2 (en) 2012-03-23 2017-12-12 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming a PoP device with embedded vertical interconnect units
US8810024B2 (en) * 2012-03-23 2014-08-19 Stats Chippac Ltd. Semiconductor method and device of forming a fan-out PoP device with PWB vertical interconnect units
JP2014038890A (ja) * 2012-08-10 2014-02-27 Ibiden Co Ltd 配線板及び配線板の製造方法
TWI543307B (zh) * 2012-09-27 2016-07-21 欣興電子股份有限公司 封裝載板與晶片封裝結構
KR101420514B1 (ko) * 2012-10-23 2014-07-17 삼성전기주식회사 전자부품들이 구비된 기판구조 및 전자부품들이 구비된 기판구조의 제조방법
US9035194B2 (en) * 2012-10-30 2015-05-19 Intel Corporation Circuit board with integrated passive devices
US20140167900A1 (en) 2012-12-14 2014-06-19 Gregorio R. Murtagian Surface-mount inductor structures for forming one or more inductors with substrate traces
US10433421B2 (en) * 2012-12-26 2019-10-01 Intel Corporation Reduced capacitance land pad
KR20140083514A (ko) * 2012-12-26 2014-07-04 삼성전기주식회사 코어기판 및 그 제조방법, 그리고 전자부품 내장기판 및 그 제조방법
US9312219B2 (en) * 2012-12-28 2016-04-12 Dyi-chung Hu Interposer and packaging substrate having the interposer
RU2558229C2 (ru) * 2013-04-19 2015-07-27 Общество с ограниченной ответственностью "Ген Эксперт" Набор и способ для приготовления многослойных агарозных блоков на поверхности мини-стекол для микроскопии
JP2014236188A (ja) * 2013-06-05 2014-12-15 イビデン株式会社 配線板及びその製造方法
KR102192356B1 (ko) 2013-07-29 2020-12-18 삼성전자주식회사 반도체 패키지
JP6705096B2 (ja) * 2013-08-21 2020-06-03 インテル・コーポレーション バンプレスビルドアップ層(bbul)用のバンプレスダイ−パッケージインターフェースを備えるパッケージアセンブリ、コンピューティングデバイス、及びパッケージアセンブリの製造方法
KR101531097B1 (ko) * 2013-08-22 2015-06-23 삼성전기주식회사 인터포저 기판 및 이의 제조방법
JP2015049985A (ja) * 2013-08-30 2015-03-16 富士通株式会社 Icソケット及び接続端子
US10615133B2 (en) * 2013-09-27 2020-04-07 Intel Corporation Die package with superposer substrate for passive components
US20150255411A1 (en) * 2014-03-05 2015-09-10 Omkar G. Karhade Die-to-die bonding and associated package configurations
KR102333083B1 (ko) * 2014-05-30 2021-12-01 삼성전기주식회사 패키지 기판 및 패키지 기판 제조 방법
JP2016029681A (ja) 2014-07-25 2016-03-03 イビデン株式会社 多層配線板及びその製造方法
JP6323672B2 (ja) * 2014-07-25 2018-05-16 株式会社ソシオネクスト 半導体装置及びその製造方法
JP6473595B2 (ja) * 2014-10-10 2019-02-20 イビデン株式会社 多層配線板及びその製造方法
TWI554174B (zh) * 2014-11-04 2016-10-11 上海兆芯集成電路有限公司 線路基板和半導體封裝結構
US20170268823A1 (en) * 2014-11-25 2017-09-21 Corning Incorporated Measurement of electrode length in a melting furnace
US10306777B2 (en) * 2014-12-15 2019-05-28 Bridge Semiconductor Corporation Wiring board with dual stiffeners and dual routing circuitries integrated together and method of making the same
US9601435B2 (en) * 2015-01-22 2017-03-21 Qualcomm Incorporated Semiconductor package with embedded components and method of making the same
KR102356810B1 (ko) * 2015-01-22 2022-01-28 삼성전기주식회사 전자부품내장형 인쇄회로기판 및 그 제조방법
US9711488B2 (en) * 2015-03-13 2017-07-18 Mediatek Inc. Semiconductor package assembly
US9786623B2 (en) 2015-03-17 2017-10-10 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming PoP semiconductor device with RDL over top package
RU2595846C1 (ru) * 2015-04-27 2016-08-27 Общество с ограниченной ответственностью "Нанолек" Способ производства твердой дисперсной системы с диоксидом кремния
KR102408841B1 (ko) 2015-06-25 2022-06-14 인텔 코포레이션 패키지 온 패키지를 위한 리세싱된 전도성 컨택들을 갖는 집적 회로 구조체들
JP2018520507A (ja) * 2015-06-25 2018-07-26 インテル コーポレイション リセスを有するインターポーザを用いた集積回路構造
US20170086298A1 (en) * 2015-09-23 2017-03-23 Tin Poay Chuah Substrate including structures to couple a capacitor to a packaged device and method of making same
CN108141968B (zh) * 2015-10-22 2020-07-07 Agc株式会社 配线基板的制造方法
US9648729B1 (en) * 2015-11-20 2017-05-09 Raytheon Company Stress reduction interposer for ceramic no-lead surface mount electronic device
US9806061B2 (en) * 2016-03-31 2017-10-31 Altera Corporation Bumpless wafer level fan-out package
US11355427B2 (en) * 2016-07-01 2022-06-07 Intel Corporation Device, method and system for providing recessed interconnect structures of a substrate
TWI691062B (zh) * 2016-09-20 2020-04-11 英屬開曼群島商鳳凰先驅股份有限公司 基板結構及其製作方法
MY192082A (en) * 2016-12-27 2022-07-26 Intel Corp Interconnect core
TWI782939B (zh) 2016-12-29 2022-11-11 美商英帆薩斯邦德科技有限公司 具有整合式被動構件的接合結構
US20180240778A1 (en) * 2017-02-22 2018-08-23 Intel Corporation Embedded multi-die interconnect bridge with improved power delivery
US10242964B1 (en) 2018-01-16 2019-03-26 Bridge Semiconductor Corp. Wiring substrate for stackable semiconductor assembly and stackable semiconductor assembly using the same
JP2019153658A (ja) * 2018-03-02 2019-09-12 富士通株式会社 基板モジュール及び基板モジュールの製造方法
WO2019196569A1 (zh) * 2018-04-09 2019-10-17 北京比特大陆科技有限公司 电路基板、芯片、串联电路、电路板以及电子设备
US11432405B2 (en) * 2018-06-29 2022-08-30 Intel Corporation Methods for attaching large components in a package substrate for advanced power delivery
KR102624986B1 (ko) 2018-12-14 2024-01-15 삼성전자주식회사 반도체 패키지
KR102595865B1 (ko) * 2019-03-04 2023-10-30 삼성전자주식회사 하이브리드 인터포저를 갖는 반도체 패키지
US11901281B2 (en) 2019-03-11 2024-02-13 Adeia Semiconductor Bonding Technologies Inc. Bonded structures with integrated passive component
JP7455516B2 (ja) * 2019-03-29 2024-03-26 Tdk株式会社 素子内蔵基板およびその製造方法
US20220230931A1 (en) * 2019-05-28 2022-07-21 Epicmems (Xiamen) Co., Ltd. Chip encapsulation structure and encapsulation method
US11710726B2 (en) 2019-06-25 2023-07-25 Microsoft Technology Licensing, Llc Through-board power control arrangements for integrated circuit devices
US11071213B2 (en) * 2019-07-24 2021-07-20 The Boeing Company Methods of manufacturing a high impedance surface (HIS) enhanced by discrete passives
US10993325B2 (en) 2019-07-31 2021-04-27 Abb Power Electronics Inc. Interposer printed circuit boards for power modules
US11490517B2 (en) * 2019-07-31 2022-11-01 ABB Power Electronics, Inc. Interposer printed circuit boards for power modules
JP2021057668A (ja) * 2019-09-27 2021-04-08 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
US10984957B1 (en) 2019-12-03 2021-04-20 International Business Machines Corporation Printed circuit board embedded capacitor
KR102643424B1 (ko) * 2019-12-13 2024-03-06 삼성전자주식회사 반도체 패키지
US11410934B2 (en) * 2020-04-16 2022-08-09 Advanced Semiconductor Engineering, Inc. Substrate and semiconductor device package and method for manufacturing the same
EP3911132A1 (de) * 2020-05-12 2021-11-17 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Bauteilträger mit einem festen körper, der ein bauteilträgerloch vor dem eindringen von fremdkörpern schützt
JP2022088990A (ja) * 2020-12-03 2022-06-15 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
WO2023017727A1 (ja) * 2021-08-13 2023-02-16 株式会社村田製作所 インターポーザ
WO2023074251A1 (ja) * 2021-10-28 2023-05-04 株式会社村田製作所 トラッカモジュール
US20230137977A1 (en) * 2021-10-29 2023-05-04 Nxp B.V. Stacking a semiconductor die and chip-scale-package unit
WO2023121644A1 (en) * 2021-12-20 2023-06-29 Monde Wireless Inc. Semiconductor device for rf integrated circuit

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150068A (en) * 1975-06-19 1976-12-23 Citizen Watch Co Ltd Electronic circuit block
US4328530A (en) * 1980-06-30 1982-05-04 International Business Machines Corporation Multiple layer, ceramic carrier for high switching speed VLSI chips
US4453176A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation LSI Chip carrier with buried repairable capacitor with low inductance leads
US5177670A (en) * 1991-02-08 1993-01-05 Hitachi, Ltd. Capacitor-carrying semiconductor module
JPH04356998A (ja) 1991-06-01 1992-12-10 Ibiden Co Ltd マルチチップモジュール
JPH06232301A (ja) * 1993-02-01 1994-08-19 Shinko Electric Ind Co Ltd 液冷式集積回路実装用のチップコネクタと液冷式集積回路の実装構造
JPH06326472A (ja) 1993-05-14 1994-11-25 Toshiba Corp チップコンデンサ内蔵基板
JPH07263619A (ja) 1994-03-17 1995-10-13 Toshiba Corp 半導体装置
JP3123343B2 (ja) * 1994-05-11 2001-01-09 富士電機株式会社 安定化電源装置とその製造方法
US5600175A (en) * 1994-07-27 1997-02-04 Texas Instruments Incorporated Apparatus and method for flat circuit assembly
JP2701802B2 (ja) * 1995-07-17 1998-01-21 日本電気株式会社 ベアチップ実装用プリント基板
US5866952A (en) 1995-11-30 1999-02-02 Lockheed Martin Corporation High density interconnected circuit module with a compliant layer as part of a stress-reducing molded substrate
WO1998044564A1 (en) * 1997-04-02 1998-10-08 Tessera, Inc. Chip with internal signal routing in external element
JP3051700B2 (ja) 1997-07-28 2000-06-12 京セラ株式会社 素子内蔵多層配線基板の製造方法
US6043987A (en) * 1997-08-25 2000-03-28 Compaq Computer Corporation Printed circuit board having a well structure accommodating one or more capacitor components
JPH1174648A (ja) 1997-08-27 1999-03-16 Kyocera Corp 配線基板
JPH11317490A (ja) 1997-10-16 1999-11-16 Hitachi Ltd 半導体素子搭載基板
JPH11126978A (ja) 1997-10-24 1999-05-11 Kyocera Corp 多層配線基板
US6023407A (en) * 1998-02-26 2000-02-08 International Business Machines Corporation Structure for a thin film multilayer capacitor
US6239485B1 (en) * 1998-11-13 2001-05-29 Fujitsu Limited Reduced cross-talk noise high density signal interposer with power and ground wrap
US6222246B1 (en) * 1999-01-08 2001-04-24 Intel Corporation Flip-chip having an on-chip decoupling capacitor
US6218729B1 (en) * 1999-03-11 2001-04-17 Atmel Corporation Apparatus and method for an integrated circuit having high Q reactive components

Also Published As

Publication number Publication date
US20050258548A1 (en) 2005-11-24
EP1608016A2 (de) 2005-12-21
EP1608016B1 (de) 2011-08-31
DE60035307T2 (de) 2008-03-06
EP1041631A2 (de) 2000-10-04
JP2000349225A (ja) 2000-12-15
US6952049B1 (en) 2005-10-04
RU2008107034A (ru) 2009-09-10
US7239014B2 (en) 2007-07-03
TWI224486B (en) 2004-11-21
EP1608016A3 (de) 2007-10-03
RU2411291C2 (ru) 2011-02-10
JP3792445B2 (ja) 2006-07-05
EP1041631B1 (de) 2007-06-27
EP1041631A3 (de) 2003-11-26

Similar Documents

Publication Publication Date Title
DE60035307D1 (de) Gedruckte Schaltung mit eingebautem Kondensator, Substrat mit gedruckter Schaltung und Kondensator
DE69900624T2 (de) Integrierte Schaltung mit veränderlichem Kondensator
MXPA03001476A (es) Substrato impreso con atributos locales variables.
DE60045566D1 (de) Mehrschicht-Leiterplatte
DE69812179D1 (de) Gedruckte schaltungsplatine mit integrierter schmelzsicherung
EE200000602A (et) Integraallülitusega varustatud paberist valmistatud põhimik
DE60027515D1 (de) Elektronisches Gerät
NO20006133D0 (no) Elektronisk halvlederkomponent
DE60020806D1 (de) Elektronisches sphygmomanometer
DE60039569D1 (de) Gedruckte Leiterplatte
DE60007218D1 (de) Flipflop-Schaltung
EP1236756A4 (de) Neues polyimid und dieses enthaltendes schaltungssubstrat
DE60035917D1 (de) Elektronisches Bauteil
DE60101436D1 (de) Resetschaltung mit ferroelektrischem Kondensator
DE50003281D1 (de) Schaltung mit eingebautem selbsttest
DE50010444D1 (de) Platine
DE10083663T1 (de) Mehrschichtiges elektronisches Keramikbauelement
DE59914917D1 (de) Chipkarte mit integrierter Schaltung
DE60030901D1 (de) Chip-Vielschichtlaminat-Varistor
DE69833720D1 (de) Integrierte Halbleiterschaltung mit On-Chip Kondensatoren
DE69939157D1 (de) Gedruckte Leiterplatte
DE50001580D1 (de) Integrierter schaltkreis mit zumindest zwei taktsystemen
DE60028934D1 (de) Schaltungsanordnung
DE69938982D1 (de) Mehrlagen Gedruckteschaltungsplatte
DE60020193D1 (de) Mehrschichtige Leiterplatte

Legal Events

Date Code Title Description
8364 No opposition during term of opposition